TW373320B - Structure and production method of capacitor of dynamic RAM - Google Patents

Structure and production method of capacitor of dynamic RAM

Info

Publication number
TW373320B
TW373320B TW085106287A TW85106287A TW373320B TW 373320 B TW373320 B TW 373320B TW 085106287 A TW085106287 A TW 085106287A TW 85106287 A TW85106287 A TW 85106287A TW 373320 B TW373320 B TW 373320B
Authority
TW
Taiwan
Prior art keywords
forming
capacitor
conductive layer
production method
dynamic ram
Prior art date
Application number
TW085106287A
Other languages
English (en)
Inventor
li-zhe Chen
Original Assignee
United Microelectronics Corporaiton
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corporaiton filed Critical United Microelectronics Corporaiton
Priority to TW085106287A priority Critical patent/TW373320B/zh
Priority to US08/661,384 priority patent/US5744388A/en
Priority to JP8202811A priority patent/JP3007300B2/ja
Priority to US08/928,334 priority patent/US5867362A/en
Application granted granted Critical
Publication of TW373320B publication Critical patent/TW373320B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
    • H01L28/92—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by patterning layers, e.g. by etching conductive layers
TW085106287A 1996-05-27 1996-05-27 Structure and production method of capacitor of dynamic RAM TW373320B (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
TW085106287A TW373320B (en) 1996-05-27 1996-05-27 Structure and production method of capacitor of dynamic RAM
US08/661,384 US5744388A (en) 1996-05-27 1996-06-11 Process of making a storage capacitor for dram memory cell
JP8202811A JP3007300B2 (ja) 1996-05-27 1996-07-15 Ｄｒａｍメモリセル用蓄積キャパシタの製造方法
US08/928,334 US5867362A (en) 1996-05-27 1997-09-12 Storage capacitor for DRAM memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW085106287A TW373320B (en) 1996-05-27 1996-05-27 Structure and production method of capacitor of dynamic RAM

Publications (1)

Publication Number Publication Date
TW373320B true TW373320B (en) 1999-11-01

Family

ID=21625257

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085106287A TW373320B (en) 1996-05-27 1996-05-27 Structure and production method of capacitor of dynamic RAM

Country Status (3)

Country Link
US (2) US5744388A (zh)
JP (1) JP3007300B2 (zh)
TW (1) TW373320B (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6066539A (en) 1997-04-11 2000-05-23 Micron Technology, Inc. Honeycomb capacitor and method of fabrication
US7179892B2 (en) * 2000-12-06 2007-02-20 Neuralab Limited Humanized antibodies that recognize beta amyloid peptide
US6342445B1 (en) * 2000-05-15 2002-01-29 Micron Technology, Inc. Method for fabricating an SrRuO3 film
PE20020574A1 (es) * 2000-12-06 2002-07-02 Wyeth Corp Anticuerpos humanizados que reconocen el peptido amiloideo beta
US9972364B2 (en) * 2011-10-14 2018-05-15 Texas Instruments Incorporated Method to maintain power supply voltage during brownout
FR3063387B1 (fr) * 2017-02-24 2021-05-21 Commissariat Energie Atomique Composant electronique muni d'un transistor et de doigts interdigites pour former au moins une partie d'un composant capacitif au sein du composant electronique

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0469964A (ja) * 1990-07-10 1992-03-05 Fujitsu Ltd 半導体装置の製造方法
JPH04122652A (ja) * 1990-09-12 1992-04-23 Ricoh Co Ltd 端面型サーマルヘッドの製造方法
JPH04170061A (ja) * 1990-11-02 1992-06-17 Oki Electric Ind Co Ltd 半導体記憶装置の製造方法
JP2633395B2 (ja) * 1990-12-12 1997-07-23 シャープ株式会社 半導体メモリ素子の製造方法
KR930009594B1 (ko) * 1991-01-30 1993-10-07 삼성전자 주식회사 고집적 반도체 메모리장치 및 그 제조방법
US5130885A (en) * 1991-07-10 1992-07-14 Micron Technology, Inc. Dram cell in which a silicon-germanium alloy layer having a rough surface morphology is utilized for a capacitive surface
KR940005288B1 (ko) * 1991-07-11 1994-06-15 금성일렉트론 주식회사 반도체 장치의 제조방법
GB2293691B (en) * 1991-09-07 1996-06-19 Samsung Electronics Co Ltd Semiconductor memory devices
US5213992A (en) * 1991-10-02 1993-05-25 Industrial Technology Research Institute Rippled polysilicon surface capacitor electrode plate for high density DRAM
JPH05251637A (ja) * 1992-03-05 1993-09-28 Oki Electric Ind Co Ltd 半導体装置およびその製造方法
US5254503A (en) * 1992-06-02 1993-10-19 International Business Machines Corporation Process of making and using micro mask
JPH0621380A (ja) * 1992-07-01 1994-01-28 Oki Electric Ind Co Ltd 半導体記憶装置の製造方法
DE4321638A1 (de) * 1992-09-19 1994-03-24 Samsung Electronics Co Ltd Halbleiterspeicherbauelement mit einem Kondensator und Verfahren zu seiner Herstellung
US5418180A (en) * 1994-06-14 1995-05-23 Micron Semiconductor, Inc. Process for fabricating storage capacitor structures using CVD tin on hemispherical grain silicon
US5504041A (en) * 1994-08-01 1996-04-02 Texas Instruments Incorporated Conductive exotic-nitride barrier layer for high-dielectric-constant materials

Also Published As

Publication number Publication date
US5744388A (en) 1998-04-28
JPH09321253A (ja) 1997-12-12
US5867362A (en) 1999-02-02
JP3007300B2 (ja) 2000-02-07

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