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A kind of manufacturing method for tunnel type electrode capacitors which includes the following steps: form the insulation layer and masking film on the substrate with field effect and define and form the contact windows; then, proceed the isotropic etching to expand the contact windows as a tunnel, and form the conductive layer on the masking film, side wall of tunnel and the bottom surface; then, define conductive layer to let the left conductive layer can at least cover the side wall of tunnel and bottom surface and the section of the residual on the masking film can be the lower electrode of tunnel type whose bottom is electrically coupled with source/drain region; then, form the dielectric film layer on the surface of lower electrode and another conductive layer, which is upper electrode, on the surface of dielectric film layer.
TW087106843A1998-05-041998-05-04Structure and manufacturing method for tunnel type electrode capacitors
TW363254B
(en)