TW363269B - Manufacturing method of capacitors used for memory cells of DRAM - Google Patents

Manufacturing method of capacitors used for memory cells of DRAM

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Publication number
TW363269B
TW363269B TW084101619A TW84101619A TW363269B TW 363269 B TW363269 B TW 363269B TW 084101619 A TW084101619 A TW 084101619A TW 84101619 A TW84101619 A TW 84101619A TW 363269 B TW363269 B TW 363269B
Authority
TW
Taiwan
Prior art keywords
dram
manufacturing
memory cells
conductive layer
capacitors
Prior art date
Application number
TW084101619A
Other languages
Chinese (zh)
Inventor
Yun-Ding Hong
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW084101619A priority Critical patent/TW363269B/en
Application granted granted Critical
Publication of TW363269B publication Critical patent/TW363269B/en

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Abstract

A kind of manufacturing method of capacitors used for memory cells of DRAM which includes the following steps: forming the first insulation layer, the first barrier, the second insulation layer and the second barrier; isotropically etching the contact; isotropically etching the said second insulation layer via the said contact and forms the trench between the said first and second barriers; forms the first conductive layer; anisotropically etching the lower conductive layer for the said capacitors; isotropically etching out the said first and second barrier; forms the dielectric layer on the surface of lower conductive layer; and form the second conductive layer on the said dielectric layer to be used as the upper conductive layer for the said capacitors.
TW084101619A 1995-02-22 1995-02-22 Manufacturing method of capacitors used for memory cells of DRAM TW363269B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW084101619A TW363269B (en) 1995-02-22 1995-02-22 Manufacturing method of capacitors used for memory cells of DRAM

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW084101619A TW363269B (en) 1995-02-22 1995-02-22 Manufacturing method of capacitors used for memory cells of DRAM

Publications (1)

Publication Number Publication Date
TW363269B true TW363269B (en) 1999-07-01

Family

ID=57940887

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084101619A TW363269B (en) 1995-02-22 1995-02-22 Manufacturing method of capacitors used for memory cells of DRAM

Country Status (1)

Country Link
TW (1) TW363269B (en)

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