TW245836B - Process for trench dynamic random access memory - Google Patents
Process for trench dynamic random access memoryInfo
- Publication number
- TW245836B TW245836B TW83102069A TW83102069A TW245836B TW 245836 B TW245836 B TW 245836B TW 83102069 A TW83102069 A TW 83102069A TW 83102069 A TW83102069 A TW 83102069A TW 245836 B TW245836 B TW 245836B
- Authority
- TW
- Taiwan
- Prior art keywords
- dielectric layer
- trench
- depositing
- capacitor
- random access
- Prior art date
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
A process for capacitor of dynamic random access memory includes the steps: 1. forming the first dielectric layer; 2. defining pattern of trench capacitor area; 3. depositing the second dielectric layer; 4. by plasma etching technique, anisotropically etching back the second dielectric layer to form oxide spacer, and removing the second dielectric layer of trench outer area surface; 5. depositing the first conductive layer which fills up gaps between the spacers in trench; 6. by plasma etching technique, anisotropically etching back the first dielectric layer to form oxide spacer, and removing the second dielectric layer of trench outer area surface; 7. removing spacer in trench; 8. by plasma etching technique, anisotropically etching the first conductive layer and monolithic-silicon simultaneously; 9. depositing or growing very thin isolation as capacitor dielectric layer, then depositing the second conductive layer, and defining its pattern as electrode of capacitor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW83102069A TW245836B (en) | 1994-03-07 | 1994-03-07 | Process for trench dynamic random access memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW83102069A TW245836B (en) | 1994-03-07 | 1994-03-07 | Process for trench dynamic random access memory |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW245836B true TW245836B (en) | 1995-04-21 |
Family
ID=51401117
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW83102069A TW245836B (en) | 1994-03-07 | 1994-03-07 | Process for trench dynamic random access memory |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW245836B (en) |
-
1994
- 1994-03-07 TW TW83102069A patent/TW245836B/en not_active IP Right Cessation
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |