TW266324B - Process for dynamic random access memory with coaxial capacitor - Google Patents
Process for dynamic random access memory with coaxial capacitorInfo
- Publication number
- TW266324B TW266324B TW84106106A TW84106106A TW266324B TW 266324 B TW266324 B TW 266324B TW 84106106 A TW84106106 A TW 84106106A TW 84106106 A TW84106106 A TW 84106106A TW 266324 B TW266324 B TW 266324B
- Authority
- TW
- Taiwan
- Prior art keywords
- insulator
- depositing
- polysilicon
- forming
- capacitor
- Prior art date
Links
Landscapes
- Semiconductor Memories (AREA)
Abstract
A process of dynamic random access memory with coaxial capacitor comprises the steps of: forming field oxide needed by separating active regions; forming field effect transistor which has gate dielectric, gate electrode, spacer and source/drain region; depositing insulator-1, insulator-2 and insulator-3; depositing one doped polysilicon-1; depositing insulator-4; forming node contact by lithography and etching; depositing one doped polysilicon-2 which will fill up the above node contact; anisotropically performing etchback to the above polysilicon-2 by plasma etching in order to form polysilicon plug in the above node contact; removing the above insulator-4 by chemical solution; depositing insulator-5; anisotropically performing etchback to the above insulator-5 by plasma etching in order to form spacer on the sides of the above polysilicon plug; depositing one doped polysilicon-3; anisotropically performing etchback to the above polysilicon-3 by plasma etching in order to form spacer, and the above etchback stops on surface of the above insulator-3; removing the above spacer formed by insulator-5 by chemical solution, completing storage node of capacitor; forming one very thin capacitor dielectric; forming one doped polysilicon-4, and defining top plate of capacitor by lithography and etching.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW84106106A TW266324B (en) | 1995-06-14 | 1995-06-14 | Process for dynamic random access memory with coaxial capacitor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW84106106A TW266324B (en) | 1995-06-14 | 1995-06-14 | Process for dynamic random access memory with coaxial capacitor |
Publications (1)
Publication Number | Publication Date |
---|---|
TW266324B true TW266324B (en) | 1995-12-21 |
Family
ID=51402195
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW84106106A TW266324B (en) | 1995-06-14 | 1995-06-14 | Process for dynamic random access memory with coaxial capacitor |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW266324B (en) |
-
1995
- 1995-06-14 TW TW84106106A patent/TW266324B/en active
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