TW366599B - Optoelectronic converter and its manufacturing method - Google Patents
Optoelectronic converter and its manufacturing methodInfo
- Publication number
- TW366599B TW366599B TW085100760A TW85100760A TW366599B TW 366599 B TW366599 B TW 366599B TW 085100760 A TW085100760 A TW 085100760A TW 85100760 A TW85100760 A TW 85100760A TW 366599 B TW366599 B TW 366599B
- Authority
- TW
- Taiwan
- Prior art keywords
- bottom plate
- manufacturing
- optoelectronic converter
- holder
- distance
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000005693 optoelectronics Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Led Device Packages (AREA)
- Light Receiving Elements (AREA)
- Semiconductor Lasers (AREA)
- Optical Couplings Of Light Guides (AREA)
- Led Devices (AREA)
- Measurement Of Radiation (AREA)
- Testing Of Optical Devices Or Fibers (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19508222A DE19508222C1 (de) | 1995-03-08 | 1995-03-08 | Optoelektronischer Wandler und Herstellverfahren |
Publications (1)
Publication Number | Publication Date |
---|---|
TW366599B true TW366599B (en) | 1999-08-11 |
Family
ID=7756033
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085100760A TW366599B (en) | 1995-03-08 | 1996-01-23 | Optoelectronic converter and its manufacturing method |
Country Status (8)
Country | Link |
---|---|
US (1) | US5981945A (zh) |
EP (1) | EP0731509B1 (zh) |
JP (1) | JP3256126B2 (zh) |
KR (1) | KR960036157A (zh) |
CN (1) | CN1135660A (zh) |
DE (2) | DE19508222C1 (zh) |
ES (1) | ES2158166T3 (zh) |
TW (1) | TW366599B (zh) |
Families Citing this family (79)
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US20080136955A1 (en) * | 1996-09-27 | 2008-06-12 | Tessera North America. | Integrated camera and associated methods |
AU747260B2 (en) | 1997-07-25 | 2002-05-09 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
DE19803936A1 (de) * | 1998-01-30 | 1999-08-05 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Ausdehnungskompensiertes optoelektronisches Halbleiter-Bauelement, insbesondere UV-emittierende Leuchtdiode und Verfahren zu seiner Herstellung |
CN1258820C (zh) * | 1998-06-30 | 2006-06-07 | 罗伯特·博施有限公司 | 电磁辐射的探测装置 |
DE19958229B4 (de) * | 1998-12-09 | 2007-05-31 | Fuji Electric Co., Ltd., Kawasaki | Optisches Halbleiter-Sensorbauelement |
US6683325B2 (en) * | 1999-01-26 | 2004-01-27 | Patent-Treuhand-Gesellschaft-für Elektrische Glühlampen mbH | Thermal expansion compensated opto-electronic semiconductor element, particularly ultraviolet (UV) light emitting diode, and method of its manufacture |
JP3770014B2 (ja) | 1999-02-09 | 2006-04-26 | 日亜化学工業株式会社 | 窒化物半導体素子 |
EP1168539B1 (en) | 1999-03-04 | 2009-12-16 | Nichia Corporation | Nitride semiconductor laser device |
US20040041081A1 (en) * | 2002-08-30 | 2004-03-04 | Feldman Michael R. | Integrated optical transceiver and related methods |
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US6674775B1 (en) | 2000-02-18 | 2004-01-06 | Jds Uniphase Corporation | Contact structure for semiconductor lasers |
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US7842914B2 (en) * | 2000-03-06 | 2010-11-30 | Tessera North America, Inc. | Optoelectronic package, camera including the same and related methods |
US6759687B1 (en) * | 2000-10-13 | 2004-07-06 | Agilent Technologies, Inc. | Aligning an optical device system with an optical lens system |
KR100393057B1 (ko) * | 2000-10-20 | 2003-07-31 | 삼성전자주식회사 | 마이크로 렌즈 일체형 표면광 레이저 |
US6798931B2 (en) * | 2001-03-06 | 2004-09-28 | Digital Optics Corp. | Separating of optical integrated modules and structures formed thereby |
US6635941B2 (en) * | 2001-03-21 | 2003-10-21 | Canon Kabushiki Kaisha | Structure of semiconductor device with improved reliability |
JP2002290842A (ja) * | 2001-03-23 | 2002-10-04 | Sanyo Electric Co Ltd | 固体撮像素子の製造方法 |
DE10118630A1 (de) * | 2001-04-12 | 2002-10-17 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Verfahren zur Herstellung eines optoelektronischen Halbleiter-Bauelements |
FR2824955B1 (fr) * | 2001-05-18 | 2004-07-09 | St Microelectronics Sa | Boitier semi-conducteur optique blinde |
DE50111658D1 (de) | 2001-09-14 | 2007-01-25 | Finisar Corp | Sende- und/oder empfangsanordnung zur optischen signalübertragung |
DE10146498C2 (de) * | 2001-09-21 | 2003-11-20 | Arnold Glaswerke | Photovoltaik-Isolierverglasung |
US7343535B2 (en) | 2002-02-06 | 2008-03-11 | Avago Technologies General Ip Dte Ltd | Embedded testing capability for integrated serializer/deserializers |
US7074638B2 (en) | 2002-04-22 | 2006-07-11 | Fuji Photo Film Co., Ltd. | Solid-state imaging device and method of manufacturing said solid-state imaging device |
TW587842U (en) * | 2002-05-30 | 2004-05-11 | Hon Hai Prec Ind Co Ltd | Optical package |
KR100464965B1 (ko) * | 2002-06-28 | 2005-01-06 | 삼성전기주식회사 | 이미지 센서 모듈 하우징 |
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KR20050038041A (ko) * | 2002-09-09 | 2005-04-25 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 반도체 디바이스 및 그 제조 방법 |
KR100774775B1 (ko) | 2002-09-17 | 2007-11-07 | 앤터온 비.브이. | 카메라 디바이스, 카메라 디바이스 제조 방법, 웨이퍼스케일 패키지 및 광학 어셈블리 |
US7033664B2 (en) | 2002-10-22 | 2006-04-25 | Tessera Technologies Hungary Kft | Methods for producing packaged integrated circuit devices and packaged integrated circuit devices produced thereby |
US7982008B2 (en) * | 2002-11-27 | 2011-07-19 | David Bar-Or | Treatment of diseases and conditions mediated by increased phosphorylation |
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JP4115859B2 (ja) * | 2003-02-28 | 2008-07-09 | 株式会社日立製作所 | 陽極接合方法および電子装置 |
CN101789482B (zh) | 2003-03-10 | 2013-04-17 | 丰田合成株式会社 | 固体元件装置及其制造方法 |
US20050063431A1 (en) * | 2003-09-19 | 2005-03-24 | Gallup Kendra J. | Integrated optics and electronics |
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US7520679B2 (en) | 2003-09-19 | 2009-04-21 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd. | Optical device package with turning mirror and alignment post |
FR2861217B1 (fr) * | 2003-10-21 | 2006-03-17 | St Microelectronics Sa | Dispositif optique pour boitier semi-conducteur optique et procede de fabrication. |
DE10361650A1 (de) * | 2003-12-30 | 2005-08-04 | Osram Opto Semiconductors Gmbh | Optoelektronisches Modul und Verfahren zu dessen Herstellung |
EP1602953A1 (en) * | 2004-05-31 | 2005-12-07 | STMicroelectronics S.r.l. | A package for housing at least one electro-optic element and the corresponding assembly method |
JP3801601B2 (ja) * | 2004-06-15 | 2006-07-26 | シャープ株式会社 | 蓋部を備えた半導体ウェハの製造方法及び半導体装置の製造方法 |
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JP4547569B2 (ja) * | 2004-08-31 | 2010-09-22 | スタンレー電気株式会社 | 表面実装型led |
WO2006055094A1 (en) | 2004-09-14 | 2006-05-26 | Cdm Optics, Inc. | Low height imaging system and associated methods |
TWI289365B (en) | 2005-09-29 | 2007-11-01 | Visera Technologies Co Ltd | Wafer scale image module |
US8044412B2 (en) | 2006-01-20 | 2011-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd | Package for a light emitting element |
JP2007287967A (ja) * | 2006-04-18 | 2007-11-01 | Shinko Electric Ind Co Ltd | 電子部品装置 |
DE102007039291A1 (de) * | 2007-08-20 | 2009-02-26 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleitermodul und Verfahren zur Herstellung eines solchen |
EP2213367A4 (en) | 2007-10-19 | 2014-05-07 | Lou Ren | COMPOUND REACTION APPARATUS AND CHEMICAL PRODUCTION PROCESS USING THEREOF |
US20110192445A1 (en) * | 2008-03-13 | 2011-08-11 | Florian Solzbacher | High precision, high speed solar cell arrangement to a concentrator lens array and methods of making the same |
TWI362769B (en) | 2008-05-09 | 2012-04-21 | Univ Nat Chiao Tung | Light emitting device and fabrication method therefor |
TW201010097A (en) * | 2008-08-19 | 2010-03-01 | Advanced Optoelectronic Tech | Solar cell and manufacturing method therof |
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US8265487B2 (en) * | 2009-07-29 | 2012-09-11 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd. | Half-duplex, single-fiber (S-F) optical transceiver module and method |
DE102009042479A1 (de) | 2009-09-24 | 2011-03-31 | Msg Lithoglas Ag | Verfahren zum Herstellen einer Anordnung mit einem Bauelement auf einem Trägersubstrat und Anordnung sowie Verfahren zum Herstellen eines Halbzeuges und Halbzeug |
CN102103235B (zh) * | 2009-12-18 | 2012-06-27 | 国碁电子(中山)有限公司 | 光收发器及其制造方法 |
CN102375185B (zh) * | 2010-08-20 | 2013-11-13 | 国碁电子(中山)有限公司 | 光收发器及其制造方法 |
US20120154945A1 (en) * | 2010-12-16 | 2012-06-21 | William Mark Hiatt | Optical apertures and applications thereof |
JP2012069977A (ja) * | 2011-11-08 | 2012-04-05 | Citizen Electronics Co Ltd | 発光装置及び発光装置の製造方法 |
CN103926658A (zh) * | 2013-01-14 | 2014-07-16 | 鸿富锦精密工业(深圳)有限公司 | 光通讯模组 |
US9008139B2 (en) * | 2013-06-28 | 2015-04-14 | Jds Uniphase Corporation | Structure and method for edge-emitting diode package having deflectors and diffusers |
KR101785879B1 (ko) * | 2014-07-23 | 2017-10-16 | 헵타곤 마이크로 옵틱스 피티이. 리미티드 | 수직 정렬 피처들을 포함하는 광 방출기 및 광 검출기 모듈들 |
US10439358B2 (en) * | 2016-04-28 | 2019-10-08 | Nichia Corporation | Manufacturing method of light-emitting device |
CN109407233B (zh) * | 2018-12-17 | 2020-10-02 | 青岛海信宽带多媒体技术有限公司 | 一种光学次模块及光模块 |
CN109407235B (zh) * | 2018-12-17 | 2020-08-25 | 青岛海信宽带多媒体技术有限公司 | 一种光学次模块及光模块 |
WO2020125646A1 (zh) | 2018-12-17 | 2020-06-25 | 青岛海信宽带多媒体技术有限公司 | 一种光学次模块及光模块 |
CN110212402B (zh) * | 2019-05-07 | 2020-11-27 | 上海灿瑞科技股份有限公司 | 雷射二极管装置 |
EP4033621B1 (en) | 2019-09-20 | 2023-11-01 | Nichia Corporation | Light source device and method of manufacturing the same |
JPWO2021065909A1 (zh) * | 2019-09-30 | 2021-04-08 | ||
WO2022020257A1 (en) * | 2020-07-20 | 2022-01-27 | Apple Inc. | Photonic integrated circuits with controlled collapse chip connections |
EP3971543B1 (en) * | 2020-09-17 | 2024-02-07 | Lynred | Infrared detector forming method and associated infrared detector |
US12111210B2 (en) | 2021-07-08 | 2024-10-08 | Apple Inc. | Light source modules for noise mitigation |
US12111207B2 (en) | 2022-09-23 | 2024-10-08 | Apple Inc. | Despeckling in optical measurement systems |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59596Y2 (ja) * | 1975-03-14 | 1984-01-09 | 株式会社ニコン | ロシウツケイノジユコウキ |
JPS5946434B2 (ja) * | 1978-01-10 | 1984-11-12 | キヤノン株式会社 | 半導体レ−ザ装置 |
US4511755A (en) * | 1982-05-17 | 1985-04-16 | Kei Mori | Solar ray collection apparatus |
US5274456A (en) * | 1987-12-28 | 1993-12-28 | Hitachi, Ltd. | Semiconductor device and video camera unit using it and their manufacturing method |
DE3833096A1 (de) * | 1988-09-29 | 1990-04-05 | Siemens Ag | Optische koppelanordnung |
JPH0732208B2 (ja) * | 1989-10-31 | 1995-04-10 | 三菱電機株式会社 | 半導体装置 |
JP3191823B2 (ja) * | 1992-02-03 | 2001-07-23 | 住友電気工業株式会社 | 半導体受光装置 |
JPH0463669U (zh) * | 1990-10-12 | 1992-05-29 | ||
US5167724A (en) * | 1991-05-16 | 1992-12-01 | The United States Of America As Represented By The United States Department Of Energy | Planar photovoltaic solar concentrator module |
JPH0667115A (ja) * | 1992-08-20 | 1994-03-11 | Kyocera Corp | 画像装置 |
JP2975501B2 (ja) * | 1993-05-17 | 1999-11-10 | 京セラ株式会社 | 画像装置 |
US5617131A (en) * | 1993-10-28 | 1997-04-01 | Kyocera Corporation | Image device having a spacer with image arrays disposed in holes thereof |
-
1995
- 1995-03-08 DE DE19508222A patent/DE19508222C1/de not_active Expired - Fee Related
-
1996
- 1996-01-23 TW TW085100760A patent/TW366599B/zh active
- 1996-03-04 EP EP96103353A patent/EP0731509B1/de not_active Expired - Lifetime
- 1996-03-04 JP JP7321896A patent/JP3256126B2/ja not_active Expired - Fee Related
- 1996-03-04 ES ES96103353T patent/ES2158166T3/es not_active Expired - Lifetime
- 1996-03-04 DE DE59607023T patent/DE59607023D1/de not_active Expired - Fee Related
- 1996-03-07 KR KR1019960005882A patent/KR960036157A/ko not_active Application Discontinuation
- 1996-03-08 CN CN96101887A patent/CN1135660A/zh active Pending
- 1996-03-08 US US08/614,836 patent/US5981945A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE19508222C1 (de) | 1996-06-05 |
EP0731509B1 (de) | 2001-06-06 |
EP0731509A1 (de) | 1996-09-11 |
JPH08264843A (ja) | 1996-10-11 |
CN1135660A (zh) | 1996-11-13 |
ES2158166T3 (es) | 2001-09-01 |
DE59607023D1 (de) | 2001-07-12 |
US5981945A (en) | 1999-11-09 |
JP3256126B2 (ja) | 2002-02-12 |
KR960036157A (ko) | 1996-10-28 |
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