KR960036157A - 광전 변환기 및 그 제조방법 - Google Patents

광전 변환기 및 그 제조방법 Download PDF

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KR960036157A
KR960036157A KR1019960005882A KR19960005882A KR960036157A KR 960036157 A KR960036157 A KR 960036157A KR 1019960005882 A KR1019960005882 A KR 1019960005882A KR 19960005882 A KR19960005882 A KR 19960005882A KR 960036157 A KR960036157 A KR 960036157A
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bottom plate
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semiconductor element
plate
photoelectric converter
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KR1019960005882A
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베르너 슈페트
볼프강 그라만
게오르크 보크너
랄프 디크리히
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알베르트 발도르프, 롤프 옴케
지멘스 악티엔게젤샤프트
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Publication of KR960036157A publication Critical patent/KR960036157A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Led Device Packages (AREA)
  • Light Receiving Elements (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Measurement Of Radiation (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)

Abstract

변환기는 방사선을 받는 또는 방출하는 반도체 소자(6)를 포함하며, 상기 반도체 소자는 바닥판(1)상에 고정된다. 상기 바닥판상에는 스페이서(7)가 배치되고, 상기 스페이서는 렌즈 시스템(8)을 지지한다. 바닥판, 스페이서 및 렌지 시스템은 대략 동일한 열 팽창계수를 가진 재료, 예컨대 실리콘 및 유리로 이루어진다. 다수의 이러한 장치는 유니트로서 제조된 다음 세분된다.

Description

광전 변환기 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1도는 제 1실시예의 단면도.

Claims (10)

  1. 방사선을 받는 또는 방출하는 반도체 소자, 상기 반도체 소자가 고정되는 바닥판, 및 광학적으로 반도체 소자에 대해 정렬된 렌즈 시스템용 스페이서로서, 지지 플레이트에 결합된 스페이서를 포함하는 광전 변환기에 있어서, 바닥판(1), 스페이서(7) 및 렌지 시스템(8)이 적어도 유사한 열 팽창계수를 가진 재료로 이루어지는 것을 특징으로 하는 광전 변환기.
  2. 제 1항에 있어서, 바닥판(1) 및 렌즈 시스템(8)이 실리콘으로 이루어지고 스페이서(7)가 유리로 이루어지는 것을 특징으로 하는 광전 변환기.
  3. 제 1항에 있어서, 바닥판(1)은 유리로 이루어지고 렌즈 시스템(8) 및 스페이서(7)는 실리콘으로 이루어지는 것을 특징으로 하는 광전 변환기.
  4. 제 1항 내지 3항 중 어느 한 항에 있어서, 바닥판(1)은 금속코팅층(5)을 가지며, 상기 금속 코팅층(5)상에 반도체 소자(6)가 고정되는 것을 특징으로 하는 광전 변환기.
  5. 제 1항 내지 제 4항 중 어느 한 항에 있어서, 유리로 이루어진 부품과 실리콘으로 이루어진 부품이 에노드 본딩에 의해 서로 결합되는 것을 특징으로 하는 광전 변환기.
  6. 제 1항 내지 5항 중 어느 한 항에 있어서, 유리로 이루어진 부품과 실리콘으로 이루어진 부품이 서로 납땜되거나 또는 접착되는 것을 특징으로 하는 광전 변환기.
  7. 제 1항 내지 6항 중 어느 한 항에 있어서, 반도체 소자(6)가 바닥판(1)의 홈(2)내에 놓이는 것을 특징으로 하는 광전 변환기.
  8. 제 1항 내지 7항 중 어느 한 항에 있어서, 바닥판(1)이 실리콘으로 이루어지고 반도체 소자(6)로부터 떨어진 바닥판의 측면이 유리 플레이트(10)에 결합되는 것을 특징으로 하는 광전 변환기.
  9. a) 각각의 홈이 적어도 한 측면상에 돌출부(3)가 있도록 반도체 소자(6)의 수용을 위한 홈(2)을 바닥판(1)내에 만드는 단계, b) 돌출부상에 바닥판(1) 크기의 플레이트(17)을 배치하고 돌출부(3)와 재료 결합시키는 단계, c) 돌출부(3) 사이에서 플레이트(17)를 제거함으로써, 바닥판(1)과 결합된 스페이서(7)를 만드는 단계, d) 미리 주어진 래스터에 따라 반도체 소자(6)를 홈(2)내에 삽입하여 바닥판(1)과 결합시키는 단계, e) 반도체 소자의 수에 상응하는 수이며 동일한 래스터에 따라 또다른 플레이트상에 배치된 렌지 시스템(8)을 포함하는 또다른 플레이트(18)를 지지체상에 배치하는 단계, f) 각각의 렌지 시스템이 반도체 소자 중 하나상에 정렬되도록 또다른 플레이트(18)를 지지체에 대해 조정하는 단계, g) 또다른 플레이트(18)를 지지체상에 고정시키는 단계, h) 바닥판, 반도체 소자, 스페이서 및 또다른 플레이트로 이루어진 결합체를 제 1평행단면(13) 및 이것에 대해 직각인 제 2단면에 의해 세분함으로써, 하나의 바닥판(1), 하나의 반도체 소자(6), 스페이서(7) 및 하나의 렌즈 시스템(8)을 포함하는 유니트(11)를 만드는 단계를 포함하는 것을 특징으로 하는 제 1항에 따른 광전 변환기의 제조방법.
  10. 제 9항에 있어서, 각각의 유니트(11)는 기밀 방식의 하우징(14,15)내로 삽입되는 것을 특징으로 하는 광전 변환기의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960005882A 1995-03-08 1996-03-07 광전 변환기 및 그 제조방법 KR960036157A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19508222A DE19508222C1 (de) 1995-03-08 1995-03-08 Optoelektronischer Wandler und Herstellverfahren
DE19508222.2 1995-03-08

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KR960036157A true KR960036157A (ko) 1996-10-28

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US (1) US5981945A (ko)
EP (1) EP0731509B1 (ko)
JP (1) JP3256126B2 (ko)
KR (1) KR960036157A (ko)
CN (1) CN1135660A (ko)
DE (2) DE19508222C1 (ko)
ES (1) ES2158166T3 (ko)
TW (1) TW366599B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100464965B1 (ko) * 2002-06-28 2005-01-06 삼성전기주식회사 이미지 센서 모듈 하우징

Families Citing this family (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080136955A1 (en) * 1996-09-27 2008-06-12 Tessera North America. Integrated camera and associated methods
CN1142598C (zh) 1997-07-25 2004-03-17 日亚化学工业株式会社 氮化物半导体发光器件
DE19803936A1 (de) * 1998-01-30 1999-08-05 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Ausdehnungskompensiertes optoelektronisches Halbleiter-Bauelement, insbesondere UV-emittierende Leuchtdiode und Verfahren zu seiner Herstellung
CN1258820C (zh) * 1998-06-30 2006-06-07 罗伯特·博施有限公司 电磁辐射的探测装置
DE19958229B4 (de) * 1998-12-09 2007-05-31 Fuji Electric Co., Ltd., Kawasaki Optisches Halbleiter-Sensorbauelement
US6683325B2 (en) * 1999-01-26 2004-01-27 Patent-Treuhand-Gesellschaft-für Elektrische Glühlampen mbH Thermal expansion compensated opto-electronic semiconductor element, particularly ultraviolet (UV) light emitting diode, and method of its manufacture
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
WO2000052796A1 (fr) 1999-03-04 2000-09-08 Nichia Corporation Element de laser semiconducteur au nitrure
US20040041081A1 (en) * 2002-08-30 2004-03-04 Feldman Michael R. Integrated optical transceiver and related methods
US20070181781A1 (en) * 2001-03-06 2007-08-09 Digital Optics Corporation Integrated optical transceiver
JP3858537B2 (ja) * 1999-11-02 2006-12-13 富士ゼロックス株式会社 基板接合方法、接合体、インクジェットヘッド、および画像形成装置
IL133453A0 (en) * 1999-12-10 2001-04-30 Shellcase Ltd Methods for producing packaged integrated circuit devices and packaged integrated circuit devices produced thereby
US6674775B1 (en) 2000-02-18 2004-01-06 Jds Uniphase Corporation Contact structure for semiconductor lasers
US20040120371A1 (en) * 2000-02-18 2004-06-24 Jds Uniphase Corporation Contact structure for a semiconductor component
US7842914B2 (en) * 2000-03-06 2010-11-30 Tessera North America, Inc. Optoelectronic package, camera including the same and related methods
US6759687B1 (en) 2000-10-13 2004-07-06 Agilent Technologies, Inc. Aligning an optical device system with an optical lens system
KR100393057B1 (ko) * 2000-10-20 2003-07-31 삼성전자주식회사 마이크로 렌즈 일체형 표면광 레이저
US6798931B2 (en) * 2001-03-06 2004-09-28 Digital Optics Corp. Separating of optical integrated modules and structures formed thereby
US6635941B2 (en) * 2001-03-21 2003-10-21 Canon Kabushiki Kaisha Structure of semiconductor device with improved reliability
JP2002290842A (ja) * 2001-03-23 2002-10-04 Sanyo Electric Co Ltd 固体撮像素子の製造方法
DE10118630A1 (de) * 2001-04-12 2002-10-17 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Verfahren zur Herstellung eines optoelektronischen Halbleiter-Bauelements
FR2824955B1 (fr) * 2001-05-18 2004-07-09 St Microelectronics Sa Boitier semi-conducteur optique blinde
DE50111658D1 (de) * 2001-09-14 2007-01-25 Finisar Corp Sende- und/oder empfangsanordnung zur optischen signalübertragung
DE10146498C2 (de) * 2001-09-21 2003-11-20 Arnold Glaswerke Photovoltaik-Isolierverglasung
US7343535B2 (en) 2002-02-06 2008-03-11 Avago Technologies General Ip Dte Ltd Embedded testing capability for integrated serializer/deserializers
US7074638B2 (en) 2002-04-22 2006-07-11 Fuji Photo Film Co., Ltd. Solid-state imaging device and method of manufacturing said solid-state imaging device
TW587842U (en) * 2002-05-30 2004-05-11 Hon Hai Prec Ind Co Ltd Optical package
AU2003250646A1 (en) * 2002-07-11 2004-02-02 Alfalight, Inc. Thermal barrier for an optical bench
EP1387397A3 (en) * 2002-07-29 2005-09-07 Fuji Photo Film Co., Ltd. Solid-state imaging device and method of manufacturing the same
US7351951B2 (en) * 2002-09-09 2008-04-01 Koninklijke Philips Electronics N.V. Optoelectronic semiconductor device and method of manufacturing such a device
EP2273555A3 (en) * 2002-09-17 2012-09-12 Anteryon B.V. Camera device
US7033664B2 (en) 2002-10-22 2006-04-25 Tessera Technologies Hungary Kft Methods for producing packaged integrated circuit devices and packaged integrated circuit devices produced thereby
EP1572115B1 (en) * 2002-11-27 2015-01-21 Ampio Pharmaceuticals, Inc. Treatment of diseases and conditions mediated by increased phosphorylation
DE10308048A1 (de) * 2003-02-26 2004-09-09 Abb Research Ltd. Verfahren zur Herstellung von Trägerelementen
JP4115859B2 (ja) * 2003-02-28 2008-07-09 株式会社日立製作所 陽極接合方法および電子装置
KR100693969B1 (ko) * 2003-03-10 2007-03-12 도요다 고세이 가부시키가이샤 고체 소자 디바이스 및 그 제조 방법
US6998691B2 (en) * 2003-09-19 2006-02-14 Agilent Technologies, Inc. Optoelectronic device packaging with hermetically sealed cavity and integrated optical element
US20050063431A1 (en) * 2003-09-19 2005-03-24 Gallup Kendra J. Integrated optics and electronics
US7520679B2 (en) 2003-09-19 2009-04-21 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Optical device package with turning mirror and alignment post
US6982437B2 (en) * 2003-09-19 2006-01-03 Agilent Technologies, Inc. Surface emitting laser package having integrated optical element and alignment post
US6900509B2 (en) * 2003-09-19 2005-05-31 Agilent Technologies, Inc. Optical receiver package
US6953990B2 (en) * 2003-09-19 2005-10-11 Agilent Technologies, Inc. Wafer-level packaging of optoelectronic devices
FR2861217B1 (fr) * 2003-10-21 2006-03-17 St Microelectronics Sa Dispositif optique pour boitier semi-conducteur optique et procede de fabrication.
DE10361650A1 (de) * 2003-12-30 2005-08-04 Osram Opto Semiconductors Gmbh Optoelektronisches Modul und Verfahren zu dessen Herstellung
EP1602953A1 (en) * 2004-05-31 2005-12-07 STMicroelectronics S.r.l. A package for housing at least one electro-optic element and the corresponding assembly method
JP3801601B2 (ja) * 2004-06-15 2006-07-26 シャープ株式会社 蓋部を備えた半導体ウェハの製造方法及び半導体装置の製造方法
TWI228326B (en) * 2004-06-29 2005-02-21 Cleavage Entpr Co Ltd Structure of light emitting diode and manufacture method of the same
JP4547569B2 (ja) * 2004-08-31 2010-09-22 スタンレー電気株式会社 表面実装型ｌｅｄ
KR100859036B1 (ko) 2004-09-14 2008-09-17 씨디엠 옵틱스 인코퍼레이티드 촬상 시스템 및 관련 방법
TWI289365B (en) 2005-09-29 2007-11-01 Visera Technologies Co Ltd Wafer scale image module
US8044412B2 (en) 2006-01-20 2011-10-25 Taiwan Semiconductor Manufacturing Company, Ltd Package for a light emitting element
JP2007287967A (ja) * 2006-04-18 2007-11-01 Shinko Electric Ind Co Ltd 電子部品装置
DE102007039291A1 (de) 2007-08-20 2009-02-26 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleitermodul und Verfahren zur Herstellung eines solchen
EP2213367A4 (en) 2007-10-19 2014-05-07 Lou Ren COMPOUND REACTION APPARATUS AND CHEMICAL PRODUCTION PROCESS USING THEREOF
US20110192445A1 (en) * 2008-03-13 2011-08-11 Florian Solzbacher High precision, high speed solar cell arrangement to a concentrator lens array and methods of making the same
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
TW201010097A (en) * 2008-08-19 2010-03-01 Advanced Optoelectronic Tech Solar cell and manufacturing method therof
CN102209622B (zh) 2008-09-18 2014-05-28 数字光学东方公司 光学块和形成光学块的方法
US8265487B2 (en) * 2009-07-29 2012-09-11 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Half-duplex, single-fiber (S-F) optical transceiver module and method
DE102009042479A1 (de) 2009-09-24 2011-03-31 Msg Lithoglas Ag Verfahren zum Herstellen einer Anordnung mit einem Bauelement auf einem Trägersubstrat und Anordnung sowie Verfahren zum Herstellen eines Halbzeuges und Halbzeug
CN102103235B (zh) * 2009-12-18 2012-06-27 国碁电子(中山)有限公司 光收发器及其制造方法
CN102375185B (zh) * 2010-08-20 2013-11-13 国碁电子(中山)有限公司 光收发器及其制造方法
US20120154945A1 (en) * 2010-12-16 2012-06-21 William Mark Hiatt Optical apertures and applications thereof
JP2012069977A (ja) * 2011-11-08 2012-04-05 Citizen Electronics Co Ltd 発光装置及び発光装置の製造方法
CN103926658A (zh) * 2013-01-14 2014-07-16 鸿富锦精密工业（深圳）有限公司 光通讯模组
US9008139B2 (en) * 2013-06-28 2015-04-14 Jds Uniphase Corporation Structure and method for edge-emitting diode package having deflectors and diffusers
JP6760920B2 (ja) 2014-07-23 2020-09-23 ヘプタゴン・マイクロ・オプティクス・プライベート・リミテッドＨｅｐｔａｇｏｎ Ｍｉｃｒｏ Ｏｐｔｉｃｓ Ｐｔｅ． Ｌｔｄ． 縦方向アライメント機構を含む発光体および光検出モジュール
US10439358B2 (en) * 2016-04-28 2019-10-08 Nichia Corporation Manufacturing method of light-emitting device
CN109407233B (zh) * 2018-12-17 2020-10-02 青岛海信宽带多媒体技术有限公司 一种光学次模块及光模块
CN109407235B (zh) * 2018-12-17 2020-08-25 青岛海信宽带多媒体技术有限公司 一种光学次模块及光模块
WO2020125646A1 (zh) 2018-12-17 2020-06-25 青岛海信宽带多媒体技术有限公司 一种光学次模块及光模块
CN110212402B (zh) * 2019-05-07 2020-11-27 上海灿瑞科技股份有限公司 雷射二极管装置
EP3796489B1 (en) * 2019-09-20 2022-04-27 Nichia Corporation Light source device and method of manufacturing the same
WO2022020257A1 (en) * 2020-07-20 2022-01-27 Apple Inc. Photonic integrated circuits with controlled collapse chip connections
EP3971543B1 (en) * 2020-09-17 2024-02-07 Lynred Infrared detector forming method and associated infrared detector

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59596Y2 (ja) * 1975-03-14 1984-01-09 株式会社ニコン ロシウツケイノジユコウキ
JPS5946434B2 (ja) * 1978-01-10 1984-11-12 キヤノン株式会社 半導体レ−ザ装置
US4511755A (en) * 1982-05-17 1985-04-16 Kei Mori Solar ray collection apparatus
US5274456A (en) * 1987-12-28 1993-12-28 Hitachi, Ltd. Semiconductor device and video camera unit using it and their manufacturing method
DE3833096A1 (de) * 1988-09-29 1990-04-05 Siemens Ag Optische koppelanordnung
JPH0732208B2 (ja) * 1989-10-31 1995-04-10 三菱電機株式会社 半導体装置
JP3191823B2 (ja) * 1992-02-03 2001-07-23 住友電気工業株式会社 半導体受光装置
JPH0463669U (ko) * 1990-10-12 1992-05-29
US5167724A (en) * 1991-05-16 1992-12-01 The United States Of America As Represented By The United States Department Of Energy Planar photovoltaic solar concentrator module
JPH0667115A (ja) * 1992-08-20 1994-03-11 Kyocera Corp 画像装置
JP2975501B2 (ja) * 1993-05-17 1999-11-10 京セラ株式会社 画像装置
US5617131A (en) * 1993-10-28 1997-04-01 Kyocera Corporation Image device having a spacer with image arrays disposed in holes thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100464965B1 (ko) * 2002-06-28 2005-01-06 삼성전기주식회사 이미지 센서 모듈 하우징

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ES2158166T3 (es) 2001-09-01
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CN1135660A (zh) 1996-11-13
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