DE3884686D1 - Optisches Halbleiterlaser-System. - Google Patents

Optisches Halbleiterlaser-System.

Info

Publication number
DE3884686D1
DE3884686D1 DE88110894T DE3884686T DE3884686D1 DE 3884686 D1 DE3884686 D1 DE 3884686D1 DE 88110894 T DE88110894 T DE 88110894T DE 3884686 T DE3884686 T DE 3884686T DE 3884686 D1 DE3884686 D1 DE 3884686D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
optical semiconductor
laser system
optical
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE88110894T
Other languages
English (en)
Other versions
DE3884686T2 (de
Inventor
Hiroshi Matsuoka
Hiroyuki Hiiro
Hidetoshi Shinada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Application granted granted Critical
Publication of DE3884686D1 publication Critical patent/DE3884686D1/de
Publication of DE3884686T2 publication Critical patent/DE3884686T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0004—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed
    • G02B19/0009—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having refractive surfaces only
    • G02B19/0014—Condensers, e.g. light collectors or similar non-imaging optics characterised by the optical means employed having refractive surfaces only at least one surface having optical power
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G02B19/0052—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a laser diode
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938—Using specific optical elements
    • G02B27/095—Refractive optical elements
    • G02B27/0955—Lenses
    • G02B27/0966—Cylindrical lenses
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/125—Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/06243—Controlling other output parameters than intensity or frequency controlling the position or direction of the emitted beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2036—Broad area lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4081—Near-or far field control

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Head (AREA)
DE88110894T 1987-07-08 1988-07-07 Optisches Halbleiterlaser-System. Expired - Lifetime DE3884686T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62170560A JPH0734069B2 (ja) 1987-07-08 1987-07-08 位相同期半導体レ−ザ光学系

Publications (2)

Publication Number Publication Date
DE3884686D1 true DE3884686D1 (de) 1993-11-11
DE3884686T2 DE3884686T2 (de) 1994-02-03

Family

ID=15907113

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88110894T Expired - Lifetime DE3884686T2 (de) 1987-07-08 1988-07-07 Optisches Halbleiterlaser-System.

Country Status (4)

Country Link
US (1) US4993812A (de)
EP (1) EP0298490B1 (de)
JP (1) JPH0734069B2 (de)
DE (1) DE3884686T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6195483B1 (en) * 1996-09-30 2001-02-27 The United States Of America As Represented By The Secretary Of The Navy Fiber Bragg gratings in chalcogenide or chalcohalide based infrared optical fibers
FR2784469B1 (fr) * 1998-10-09 2002-08-30 Thomson Csf Dispositif pour augmenter la luminance de diodes laser
DE10113019A1 (de) * 2001-03-17 2002-09-19 Lissotschenko Vitalij Strahlformungsvorrichtung, Anordnung zur Einkopplung eines Lichtstrahls in eine Lichtleitfaser sowie Strahldreheinheit für eine derartige Strahlformungsvorrichtung oder eine derartige Anordnung
US6967986B2 (en) * 2002-10-16 2005-11-22 Eastman Kodak Company Light modulation apparatus using a VCSEL array with an electromechanical grating device
US8273066B2 (en) 2003-07-18 2012-09-25 Kimberly-Clark Worldwide, Inc. Absorbent article with high quality ink jet image produced at line speed
US8830587B2 (en) 2011-05-31 2014-09-09 Corning Incorporated Method and apparatus for combining light sources in a pump laser array
US8861082B2 (en) 2012-02-21 2014-10-14 Corning Incorporated Method and apparatus for combining laser array light sources
US8599485B1 (en) 2012-05-25 2013-12-03 Corning Incorporated Single-emitter etendue aspect ratio scaler
CN112197940B (zh) * 2020-09-15 2022-09-02 中国科学院上海光学精密机械研究所 一种单光路精确测量近远场基准与准直装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4170401A (en) * 1977-08-15 1979-10-09 The Perkin-Elmer Corporation Passive error compensating device for optical alignment
FR2465241A1 (fr) * 1979-09-10 1981-03-20 Thomson Csf Dispositif illuminateur destine a fournir un faisceau d'eclairement a distribution d'intensite ajustable et systeme de transfert de motifs comprenant un tel dispositif
CA1208466A (en) * 1982-07-28 1986-07-29 Donald R. Scifres Beam collimation and focusing of multi-emitter or broad emitter lasers
FR2572196B1 (fr) * 1984-10-19 1987-02-20 Centre Nat Rech Scient Procede et dispositif de modulation de phase optique controlable stable
US4757268A (en) * 1985-05-22 1988-07-12 Hughes Aircraft Company Energy scalable laser amplifier
GB2182168B (en) * 1985-10-25 1989-10-25 Hitachi Ltd Phased-array semiconductor laser apparatus
EP0312652B1 (de) * 1987-10-19 1993-09-01 Hitachi, Ltd. Optischer Aufbau mit einer phasenstarr gekoppelten Laserdiodenzeile

Also Published As

Publication number Publication date
DE3884686T2 (de) 1994-02-03
US4993812A (en) 1991-02-19
EP0298490B1 (de) 1993-10-06
JPH0734069B2 (ja) 1995-04-12
EP0298490A2 (de) 1989-01-11
EP0298490A3 (de) 1991-11-21
JPS6413518A (en) 1989-01-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FUJIFILM CORP., TOKIO/TOKYO, JP