TW364164B - CVD film forming method comprising post treatment after cleaning - Google Patents

CVD film forming method comprising post treatment after cleaning

Info

Publication number
TW364164B
TW364164B TW086118510A TW86118510A TW364164B TW 364164 B TW364164 B TW 364164B TW 086118510 A TW086118510 A TW 086118510A TW 86118510 A TW86118510 A TW 86118510A TW 364164 B TW364164 B TW 364164B
Authority
TW
Taiwan
Prior art keywords
film forming
treatment chamber
treatment
chamber
gas
Prior art date
Application number
TW086118510A
Other languages
English (en)
Inventor
Tatsuo Hatano
Seishi Murakami
Keishi Akiba
Takaya Shimizu
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=18438681&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TW364164(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of TW364164B publication Critical patent/TW364164B/zh

Links

Classifications

    • H01L21/205—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/905—Cleaning of reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
TW086118510A 1996-12-20 1997-12-09 CVD film forming method comprising post treatment after cleaning TW364164B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP35460396A JP3476638B2 (ja) 1996-12-20 1996-12-20 Ｃｖｄ成膜方法

Publications (1)

Publication Number Publication Date
TW364164B true TW364164B (en) 1999-07-11

Family

ID=18438681

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086118510A TW364164B (en) 1996-12-20 1997-12-09 CVD film forming method comprising post treatment after cleaning

Country Status (4)

Country Link
US (1) US5963834A (zh)
JP (1) JP3476638B2 (zh)
KR (1) KR100329515B1 (zh)
TW (1) TW364164B (zh)

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JP3003608B2 (ja) * 1997-01-23 2000-01-31 日本電気株式会社 半導体装置の製造方法
US6087261A (en) * 1997-09-30 2000-07-11 Fujitsu Limited Method for production of semiconductor device
TW589398B (en) * 1998-05-20 2004-06-01 Samsung Electronics Co Ltd Filtering technique for CVD chamber process gases and the same apparatus
US6302964B1 (en) * 1998-06-16 2001-10-16 Applied Materials, Inc. One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system
US6190732B1 (en) * 1998-09-03 2001-02-20 Cvc Products, Inc. Method and system for dispensing process gas for fabricating a device on a substrate
JP3818480B2 (ja) * 1999-04-21 2006-09-06 株式会社日立国際電気 半導体素子の製造方法及びその装置
US6291358B1 (en) * 1999-10-15 2001-09-18 Micron Technology, Inc. Plasma deposition tool operating method
JP4547744B2 (ja) * 1999-11-17 2010-09-22 東京エレクトロン株式会社 プリコート膜の形成方法、成膜装置のアイドリング方法、載置台構造及び成膜装置
KR100709801B1 (ko) * 1999-11-17 2007-04-23 동경 엘렉트론 주식회사 프리코트막의 형성방법, 성막장치의 아이들링 방법,재치대 구조, 성막장치 및 성막방법
WO2001042529A1 (en) * 1999-12-09 2001-06-14 Tokyo Electron Limited METHOD FOR FORMING TiSiN FILM, DIFFUSION PREVENTIVE FILM COMPRISING TiSiN FILM, SEMICONDUCTOR DEVICE AND ITS PRODUCTION METHOD, AND APPARATUS FOR FORMING TiSiN FILM
JP4419237B2 (ja) * 1999-12-22 2010-02-24 東京エレクトロン株式会社 成膜装置及び被処理体の処理方法
JP4505915B2 (ja) * 2000-01-13 2010-07-21 東京エレクトロン株式会社 成膜方法
JP4703810B2 (ja) * 2000-03-07 2011-06-15 東京エレクトロン株式会社 Ｃｖｄ成膜方法
US6502530B1 (en) * 2000-04-26 2003-01-07 Unaxis Balzers Aktiengesellschaft Design of gas injection for the electrode in a capacitively coupled RF plasma reactor
EP1167568B1 (en) * 2000-06-21 2006-06-07 Tokyo Electron Limited Heat treatment apparatus and cleaning method of the same
KR100444149B1 (ko) * 2000-07-22 2004-08-09 주식회사 아이피에스 Ald 박막증착설비용 클리닝방법
KR100375102B1 (ko) * 2000-10-18 2003-03-08 삼성전자주식회사 반도체 장치의 제조에서 화학 기상 증착 방법 및 이를수행하기 위한 장치
JP5001489B2 (ja) * 2001-03-19 2012-08-15 東京エレクトロン株式会社 処理装置
JP2003077838A (ja) * 2001-08-30 2003-03-14 Toshiba Corp 半導体製造装置のドライクリーニング時期判定システム、半導体製造装置のドライクリーニング方法、半導体製造装置のドライクリーニングシステム及び半導体装置の製造方法
JP2003077839A (ja) * 2001-08-30 2003-03-14 Toshiba Corp 半導体製造装置のパージ方法及び半導体装置の製造方法
US20050136657A1 (en) * 2002-07-12 2005-06-23 Tokyo Electron Limited Film-formation method for semiconductor process
JP4430918B2 (ja) * 2003-03-25 2010-03-10 東京エレクトロン株式会社 薄膜形成装置の洗浄方法及び薄膜形成方法
KR100527047B1 (ko) * 2003-07-01 2005-11-09 주식회사 아이피에스 박막증착방법
CN1823404B (zh) * 2003-09-19 2012-08-29 株式会社日立国际电气 半导体装置的制造方法及衬底处理装置
KR100718180B1 (ko) * 2004-03-29 2007-05-15 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법 및 기판 처리 장치
JP2006165246A (ja) * 2004-12-07 2006-06-22 Tokyo Electron Ltd プラズマエッチング方法
JP4703230B2 (ja) * 2005-03-29 2011-06-15 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
JP4823628B2 (ja) * 2005-09-26 2011-11-24 東京エレクトロン株式会社 基板処理方法および記録媒体
KR100706810B1 (ko) * 2006-02-07 2007-04-12 삼성전자주식회사 박박 형성 장치의 세정 방법 및 이를 이용한 박막 형성방법
CN101490307B (zh) 2006-07-11 2011-06-08 东京毅力科创株式会社 成膜方法、清洁方法和成膜装置
CN100451163C (zh) * 2006-10-18 2009-01-14 中微半导体设备(上海)有限公司 用于半导体工艺件处理反应器的气体分布装置及其反应器
JP5208756B2 (ja) * 2006-10-19 2013-06-12 東京エレクトロン株式会社 Ｔｉ系膜の成膜方法および記憶媒体
US20090114245A1 (en) * 2007-11-02 2009-05-07 Hidehiro Kojiri In-situ chamber cleaning method
JP4975605B2 (ja) 2007-12-26 2012-07-11 東京エレクトロン株式会社 処理システム、処理システムの制御方法およびソフトウェアのバージョンアップ方法
JP5439771B2 (ja) * 2008-09-05 2014-03-12 東京エレクトロン株式会社 成膜装置
US20100273291A1 (en) * 2009-04-28 2010-10-28 Applied Materials, Inc. Decontamination of mocvd chamber using nh3 purge after in-situ cleaning
WO2010129289A2 (en) * 2009-04-28 2010-11-11 Applied Materials, Inc. Decontamination of mocvd chamber using nh3 purge after in-situ cleaning
CN102414786B (zh) * 2009-04-28 2016-08-24 应用材料公司 在原位清洁后利用nh3净化对mocvd腔室进行去污染处理
WO2011001394A2 (en) 2009-07-02 2011-01-06 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Method of removing residual fluorine from deposition chamber
JP5194036B2 (ja) * 2010-01-27 2013-05-08 株式会社日立国際電気 基板処理装置、半導体デバイスの製造方法およびクリーニング方法
JP5194047B2 (ja) * 2010-04-14 2013-05-08 株式会社日立国際電気 基板処理装置、半導体デバイスの製造方法およびクリーニング方法
CN102517564A (zh) * 2011-12-16 2012-06-27 汉能科技有限公司 一种lpcvd工艺腔中的气体吹扫系统及方法
JP6107327B2 (ja) * 2013-03-29 2017-04-05 東京エレクトロン株式会社 成膜装置及びガス供給装置並びに成膜方法
KR20150029427A (ko) * 2013-09-10 2015-03-18 삼성디스플레이 주식회사 기상 증착 장치, 기상 증착 방법 및 유기 발광 표시 장치 제조 방법
JP6495875B2 (ja) 2016-09-12 2019-04-03 株式会社東芝 流路構造及び処理装置
JP6971887B2 (ja) * 2018-03-02 2021-11-24 東京エレクトロン株式会社 成膜方法及び成膜装置

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JPH0637074A (ja) * 1992-07-17 1994-02-10 Fujitsu Ltd 半導体製造装置のクリーニング方法
US5326723A (en) * 1992-09-09 1994-07-05 Intel Corporation Method for improving stability of tungsten chemical vapor deposition
US5616208A (en) * 1993-09-17 1997-04-01 Tokyo Electron Limited Vacuum processing apparatus, vacuum processing method, and method for cleaning the vacuum processing apparatus
JP3247270B2 (ja) * 1994-08-25 2002-01-15 東京エレクトロン株式会社 処理装置及びドライクリーニング方法

Also Published As

Publication number Publication date
JPH10189488A (ja) 1998-07-21
KR19980064042A (ko) 1998-10-07
US5963834A (en) 1999-10-05
JP3476638B2 (ja) 2003-12-10
KR100329515B1 (ko) 2002-08-21

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