TW361010B - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- TW361010B TW361010B TW086113646A TW86113646A TW361010B TW 361010 B TW361010 B TW 361010B TW 086113646 A TW086113646 A TW 086113646A TW 86113646 A TW86113646 A TW 86113646A TW 361010 B TW361010 B TW 361010B
- Authority
- TW
- Taiwan
- Prior art keywords
- nmos2
- gate
- level
- signal
- grounding wiring
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/01—Modifications for accelerating switching
- H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
- H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
- H03K19/01714—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by bootstrapping, i.e. by positive feed-back
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
- G11C29/787—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes using a fuse hierarchy
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Dram (AREA)
- Logic Circuits (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP25827796 | 1996-09-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW361010B true TW361010B (en) | 1999-06-11 |
Family
ID=17318018
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086113646A TW361010B (en) | 1996-09-30 | 1997-09-19 | Semiconductor device |
Country Status (3)
Country | Link |
---|---|
US (1) | US6072354A (zh) |
KR (1) | KR19980025112A (zh) |
TW (1) | TW361010B (zh) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6232821B1 (en) * | 2000-01-15 | 2001-05-15 | Cirrus Logic, Inc. | System for allowing below-ground and rail-to-rail input voltages |
US6404237B1 (en) * | 2000-12-29 | 2002-06-11 | Intel Corporation | Boosted multiplexer transmission gate |
ITTO20010531A1 (it) * | 2001-06-01 | 2002-12-01 | St Microelectronics Srl | Buffer di uscita per una memoria non volatile con controllo dello slew rate ottimizzato. |
US20030016070A1 (en) * | 2001-07-17 | 2003-01-23 | Wenhua Yang | Bootstrap module for multi-stage circuit |
US7053692B2 (en) * | 2002-12-19 | 2006-05-30 | United Memories, Inc. | Powergate control using boosted and negative voltages |
US20040130387A1 (en) * | 2003-01-06 | 2004-07-08 | Andrew Marshall | Logic circuitry with reduced standby leakage using charge pumped switches |
KR100490623B1 (ko) * | 2003-02-24 | 2005-05-17 | 삼성에스디아이 주식회사 | 버퍼 회로 및 이를 이용한 액티브 매트릭스 표시 장치 |
US7019342B2 (en) * | 2003-07-03 | 2006-03-28 | American Semiconductor, Inc. | Double-gated transistor circuit |
US6919647B2 (en) * | 2003-07-03 | 2005-07-19 | American Semiconductor, Inc. | SRAM cell |
US7015547B2 (en) * | 2003-07-03 | 2006-03-21 | American Semiconductor, Inc. | Multi-configurable independently multi-gated MOSFET |
JP2006059910A (ja) * | 2004-08-18 | 2006-03-02 | Fujitsu Ltd | 半導体装置 |
US8035148B2 (en) | 2005-05-17 | 2011-10-11 | Analog Devices, Inc. | Micromachined transducer integrated with a charge pump |
US7646233B2 (en) * | 2006-05-11 | 2010-01-12 | Dsm Solutions, Inc. | Level shifting circuit having junction field effect transistors |
JP2010204599A (ja) * | 2009-03-06 | 2010-09-16 | Epson Imaging Devices Corp | スキャナー、電気光学パネル、電気光学表示装置及び電子機器 |
US8154322B2 (en) * | 2009-12-21 | 2012-04-10 | Analog Devices, Inc. | Apparatus and method for HDMI transmission |
CN102751974B (zh) * | 2011-04-22 | 2015-02-25 | 联咏科技股份有限公司 | 输出缓冲器 |
TWI548217B (zh) * | 2015-03-05 | 2016-09-01 | 華邦電子股份有限公司 | 輸出電路 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2133946B (en) * | 1983-01-14 | 1986-02-26 | Itt Ind Ltd | Memory output circuit |
JP3362890B2 (ja) * | 1992-12-28 | 2003-01-07 | ソニー株式会社 | バツフア回路 |
KR0154157B1 (ko) * | 1994-04-29 | 1998-12-15 | 김주용 | 반도체 소자의 부스트랩 회로 |
KR0149527B1 (ko) * | 1994-06-15 | 1998-10-01 | 김주용 | 반도체 소자의 고전압용 트랜지스터 및 그 제조방법 |
US5621342A (en) * | 1995-10-27 | 1997-04-15 | Philips Electronics North America Corporation | Low-power CMOS driver circuit capable of operating at high frequencies |
-
1997
- 1997-09-19 TW TW086113646A patent/TW361010B/zh not_active IP Right Cessation
- 1997-09-29 US US08/939,334 patent/US6072354A/en not_active Expired - Fee Related
- 1997-09-29 KR KR1019970049593A patent/KR19980025112A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
US6072354A (en) | 2000-06-06 |
KR19980025112A (ko) | 1998-07-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |