TW356584B - Ferroelectric transistors of thin film semiconductor gate electrodes - Google Patents
Ferroelectric transistors of thin film semiconductor gate electrodesInfo
- Publication number
- TW356584B TW356584B TW086115734A TW86115734A TW356584B TW 356584 B TW356584 B TW 356584B TW 086115734 A TW086115734 A TW 086115734A TW 86115734 A TW86115734 A TW 86115734A TW 356584 B TW356584 B TW 356584B
- Authority
- TW
- Taiwan
- Prior art keywords
- thin film
- gate electrodes
- film semiconductor
- semiconductor gate
- ferroelectric transistors
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 230000005669 field effect Effects 0.000 abstract 1
- 238000004377 microelectronic Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/44—Indication or identification of errors, e.g. for repair
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40111—Multistep manufacturing processes for data storage electrodes the electrodes comprising a layer which is used for its ferroelectric properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/223—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using MOS with ferroelectric gate insulating film
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C2029/1208—Error catch memory
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US2916896P | 1996-10-25 | 1996-10-25 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW356584B true TW356584B (en) | 1999-04-21 |
Family
ID=21847603
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086115734A TW356584B (en) | 1996-10-25 | 1997-10-24 | Ferroelectric transistors of thin film semiconductor gate electrodes |
Country Status (4)
Country | Link |
---|---|
US (2) | US6225655B1 (zh) |
JP (1) | JPH10135362A (zh) |
KR (1) | KR19980033143A (zh) |
TW (1) | TW356584B (zh) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100261221B1 (ko) * | 1997-12-31 | 2000-07-01 | 윤종용 | 단일 트랜지스터 셀 및 이를 제조하는 방법 및 이 소자로 구성된 메모리 회로와 이를 구동하는 방법 |
DE19947117B4 (de) * | 1999-09-30 | 2007-03-08 | Infineon Technologies Ag | Ferroelektrischer Transistor und dessen Verwendung in einer Speicherzellenanordnung |
KR100379941B1 (ko) * | 2001-03-06 | 2003-04-11 | 주승기 | 거대 단결정립 강유전체 박막의 제조방법 및 이를 이용한강유전체 기억소자의 제조방법 |
US7168026B2 (en) * | 2001-06-22 | 2007-01-23 | Intel Corporation | Method and apparatus for preservation of failure state in a read destructive memory |
DE10212926A1 (de) * | 2002-03-22 | 2003-10-16 | Infineon Technologies Ag | Halbleiterspeicherzelle und Halbleiterspeichereinrichtung |
US6812509B2 (en) | 2002-06-28 | 2004-11-02 | Palo Alto Research Center Inc. | Organic ferroelectric memory cells |
CN100573910C (zh) * | 2003-06-05 | 2009-12-23 | 三菱电机株式会社 | 半导体器件及其制造方法 |
US7262463B2 (en) * | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
US20050017244A1 (en) * | 2003-07-25 | 2005-01-27 | Randy Hoffman | Semiconductor device |
US7297602B2 (en) * | 2003-09-09 | 2007-11-20 | Sharp Laboratories Of America, Inc. | Conductive metal oxide gate ferroelectric memory transistor |
US7008833B2 (en) * | 2004-01-12 | 2006-03-07 | Sharp Laboratories Of America, Inc. | In2O3thin film resistivity control by doping metal oxide insulator for MFMox device applications |
US7297977B2 (en) * | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
US7282782B2 (en) * | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
US7378286B2 (en) * | 2004-08-20 | 2008-05-27 | Sharp Laboratories Of America, Inc. | Semiconductive metal oxide thin film ferroelectric memory transistor |
JP4375560B2 (ja) * | 2004-12-07 | 2009-12-02 | セイコーエプソン株式会社 | トランジスタ型強誘電体メモリの製造方法 |
US7833904B2 (en) * | 2005-06-16 | 2010-11-16 | The Trustees Of Columbia University In The City Of New York | Methods for fabricating nanoscale electrodes and uses thereof |
KR101213871B1 (ko) * | 2005-12-15 | 2012-12-18 | 엘지디스플레이 주식회사 | 박막 트랜지스터 어레이 기판 및 그 제조 방법 |
KR100718155B1 (ko) | 2006-02-27 | 2007-05-14 | 삼성전자주식회사 | 두 개의 산화층을 이용한 비휘발성 메모리 소자 |
JPWO2010097862A1 (ja) * | 2009-02-24 | 2012-08-30 | パナソニック株式会社 | 半導体メモリセル及びその製造方法並びに半導体記憶装置 |
KR20100132856A (ko) * | 2009-06-10 | 2010-12-20 | 고려대학교 산학협력단 | 멀티 펑션 비휘발성 퓨전 메모리 소자 및 그의 제조 방법 |
CN105990522A (zh) * | 2015-01-28 | 2016-10-05 | 泓准达科技(上海)有限公司 | 一种柔性铁电存储器及其制备方法 |
US9876090B1 (en) * | 2016-06-30 | 2018-01-23 | International Business Machines Corporation | Lattice matched and strain compensated single-crystal compound for gate dielectric |
KR20180134124A (ko) * | 2017-06-08 | 2018-12-18 | 에스케이하이닉스 주식회사 | 강유전성 메모리 소자 |
KR20190008048A (ko) * | 2017-07-14 | 2019-01-23 | 에스케이하이닉스 주식회사 | 강유전성 메모리 소자 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2519323C3 (de) | 1975-04-30 | 1979-07-12 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Statisches Drei-Transistoren-Speicherelement |
US4888630A (en) * | 1988-03-21 | 1989-12-19 | Texas Instruments Incorporated | Floating-gate transistor with a non-linear intergate dielectric |
US5304502A (en) * | 1988-11-08 | 1994-04-19 | Yamaha Corporation | Process of fabricating semiconductor integrated circuit having conductive strips used as resistor and gate electrode of component transistor |
US5070385A (en) | 1989-10-20 | 1991-12-03 | Radiant Technologies | Ferroelectric non-volatile variable resistive element |
JP3264506B2 (ja) * | 1991-11-18 | 2002-03-11 | ローム株式会社 | 強誘電体不揮発性記憶装置 |
US5579258A (en) * | 1991-11-28 | 1996-11-26 | Olympus Optical Co., Ltd. | Ferroelectric memory |
US5307305A (en) | 1991-12-04 | 1994-04-26 | Rohm Co., Ltd. | Semiconductor device having field effect transistor using ferroelectric film as gate insulation film |
US5345414A (en) | 1992-01-27 | 1994-09-06 | Rohm Co., Ltd. | Semiconductor memory device having ferroelectric film |
FR2688090B1 (fr) | 1992-02-27 | 1994-04-08 | Commissariat A Energie Atomique | Cellule memoire non volatile du type metal-ferroelectrique semi-conducteur. |
JP3118063B2 (ja) | 1992-03-23 | 2000-12-18 | ローム株式会社 | 不揮発性記憶素子およびこれを利用した不揮発性記憶装置、ならびに不揮発性記憶素子の製造方法 |
US5326721A (en) * | 1992-05-01 | 1994-07-05 | Texas Instruments Incorporated | Method of fabricating high-dielectric constant oxides on semiconductors using a GE buffer layer |
US5523964A (en) * | 1994-04-07 | 1996-06-04 | Symetrix Corporation | Ferroelectric non-volatile memory unit |
US5789775A (en) * | 1996-01-26 | 1998-08-04 | Radiant Technologies | High density memory and double word ferroelectric memory cell for constructing the same |
US5767543A (en) * | 1996-09-16 | 1998-06-16 | Motorola, Inc. | Ferroelectric semiconductor device having a layered ferroelectric structure |
JPH1168105A (ja) * | 1997-08-26 | 1999-03-09 | Mitsubishi Electric Corp | 半導体装置 |
US6200866B1 (en) * | 1998-02-23 | 2001-03-13 | Sharp Laboratories Of America, Inc. | Use of silicon germanium and other alloys as the replacement gate for the fabrication of MOSFET |
US6002150A (en) * | 1998-06-17 | 1999-12-14 | Advanced Micro Devices, Inc. | Compound material T gate structure for devices with gate dielectrics having a high dielectric constant |
-
1997
- 1997-10-20 US US08/953,947 patent/US6225655B1/en not_active Expired - Lifetime
- 1997-10-24 KR KR1019970054774A patent/KR19980033143A/ko not_active Application Discontinuation
- 1997-10-24 TW TW086115734A patent/TW356584B/zh not_active IP Right Cessation
- 1997-10-27 JP JP9294681A patent/JPH10135362A/ja active Pending
-
2000
- 2000-08-24 US US09/645,158 patent/US6362499B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6362499B1 (en) | 2002-03-26 |
JPH10135362A (ja) | 1998-05-22 |
US6225655B1 (en) | 2001-05-01 |
KR19980033143A (ko) | 1998-07-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |