TW353767B - Light exposure mask for semiconductor devices and method for forming the same - Google Patents

Light exposure mask for semiconductor devices and method for forming the same

Info

Publication number
TW353767B
TW353767B TW085107812A TW85107812A TW353767B TW 353767 B TW353767 B TW 353767B TW 085107812 A TW085107812 A TW 085107812A TW 85107812 A TW85107812 A TW 85107812A TW 353767 B TW353767 B TW 353767B
Authority
TW
Taiwan
Prior art keywords
light exposure
exposure mask
forming
same
semiconductor devices
Prior art date
Application number
TW085107812A
Other languages
English (en)
Inventor
Jin-Su Han
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Application granted granted Critical
Publication of TW353767B publication Critical patent/TW353767B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW085107812A 1995-06-30 1996-06-28 Light exposure mask for semiconductor devices and method for forming the same TW353767B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950018860A KR0160924B1 (ko) 1995-06-30 1995-06-30 노광 마스크

Publications (1)

Publication Number Publication Date
TW353767B true TW353767B (en) 1999-03-01

Family

ID=19419279

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085107812A TW353767B (en) 1995-06-30 1996-06-28 Light exposure mask for semiconductor devices and method for forming the same

Country Status (5)

Country Link
US (1) US5759723A (zh)
KR (1) KR0160924B1 (zh)
CN (1) CN1049298C (zh)
GB (1) GB2302961A (zh)
TW (1) TW353767B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI398721B (zh) * 2005-09-13 2013-06-11 Luminescent Technologies Inc 微影系統，遮罩及方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6792029B2 (en) * 2002-03-27 2004-09-14 Sharp Laboratories Of America, Inc. Method of suppressing energy spikes of a partially-coherent beam

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63216052A (ja) * 1987-03-05 1988-09-08 Fujitsu Ltd 露光方法
US4895780A (en) * 1987-05-13 1990-01-23 General Electric Company Adjustable windage method and mask for correction of proximity effect in submicron photolithography
KR930000293B1 (ko) * 1987-10-26 1993-01-15 마쯔시다덴기산교 가부시기가이샤 미세패턴형성방법
US5057462A (en) * 1989-09-27 1991-10-15 At&T Bell Laboratories Compensation of lithographic and etch proximity effects
EP0464492B1 (en) * 1990-06-21 1999-08-04 Matsushita Electronics Corporation A photomask used by photolithography and a process of producing the same
EP1293833A1 (en) * 1991-08-22 2003-03-19 Nikon Corporation High resolution printing technique by using a mask pattern adapted to the technique
US5242770A (en) * 1992-01-16 1993-09-07 Microunity Systems Engineering, Inc. Mask for photolithography
JPH07134395A (ja) * 1993-04-22 1995-05-23 Samsung Electron Co Ltd マスクパターン及びこれを使用した微細パターンの形成方法
GB2291219B (en) * 1994-07-05 1998-07-01 Nec Corp Photo-mask fabrication and use

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI398721B (zh) * 2005-09-13 2013-06-11 Luminescent Technologies Inc 微影系統，遮罩及方法

Also Published As

Publication number Publication date
US5759723A (en) 1998-06-02
CN1049298C (zh) 2000-02-09
CN1148265A (zh) 1997-04-23
GB2302961A (en) 1997-02-05
GB9613662D0 (en) 1996-08-28
KR0160924B1 (ko) 1998-12-15
KR970002453A (ko) 1997-01-24

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees