TW347578B - A semiconductor production process using in combination of self-aligned contact - multi-contact for connection between MOS transistors - Google Patents

A semiconductor production process using in combination of self-aligned contact - multi-contact for connection between MOS transistors

Info

Publication number
TW347578B
TW347578B TW086106234A TW86106234A TW347578B TW 347578 B TW347578 B TW 347578B TW 086106234 A TW086106234 A TW 086106234A TW 86106234 A TW86106234 A TW 86106234A TW 347578 B TW347578 B TW 347578B
Authority
TW
Taiwan
Prior art keywords
gate
forming
layer
contact
dielectric layer
Prior art date
Application number
TW086106234A
Other languages
English (en)
Inventor
Jong-Jyh Liaw
Jinn-Yuan Lii
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Priority to TW086106234A priority Critical patent/TW347578B/zh
Application granted granted Critical
Publication of TW347578B publication Critical patent/TW347578B/zh

Links

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
TW086106234A 1997-05-10 1997-05-10 A semiconductor production process using in combination of self-aligned contact - multi-contact for connection between MOS transistors TW347578B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086106234A TW347578B (en) 1997-05-10 1997-05-10 A semiconductor production process using in combination of self-aligned contact - multi-contact for connection between MOS transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086106234A TW347578B (en) 1997-05-10 1997-05-10 A semiconductor production process using in combination of self-aligned contact - multi-contact for connection between MOS transistors

Publications (1)

Publication Number Publication Date
TW347578B true TW347578B (en) 1998-12-11

Family

ID=58263989

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086106234A TW347578B (en) 1997-05-10 1997-05-10 A semiconductor production process using in combination of self-aligned contact - multi-contact for connection between MOS transistors

Country Status (1)

Country Link
TW (1) TW347578B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7781282B2 (en) 2005-07-25 2010-08-24 Samsung Electronics Co., Ltd. Shared contact structure, semiconductor device and method of fabricating the semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7781282B2 (en) 2005-07-25 2010-08-24 Samsung Electronics Co., Ltd. Shared contact structure, semiconductor device and method of fabricating the semiconductor device
US8114730B2 (en) 2005-07-25 2012-02-14 Samsung Electronics Co., Ltd. Shared contact structure, semiconductor device and method of fabricating the semiconductor device

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