TW344074B - Charge transfer sense amplifier - Google Patents

Charge transfer sense amplifier

Info

Publication number
TW344074B
TW344074B TW086109941A TW86109941A TW344074B TW 344074 B TW344074 B TW 344074B TW 086109941 A TW086109941 A TW 086109941A TW 86109941 A TW86109941 A TW 86109941A TW 344074 B TW344074 B TW 344074B
Authority
TW
Taiwan
Prior art keywords
sense amplifier
bit line
output
voltage
charge transfer
Prior art date
Application number
TW086109941A
Other languages
English (en)
Inventor
Anthony Ang Michael
Original Assignee
Philips Eloctronics N V
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Eloctronics N V filed Critical Philips Eloctronics N V
Application granted granted Critical
Publication of TW344074B publication Critical patent/TW344074B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type

Landscapes

  • Dram (AREA)
  • Static Random-Access Memory (AREA)
TW086109941A 1996-06-06 1997-07-15 Charge transfer sense amplifier TW344074B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/659,384 US5668765A (en) 1996-06-06 1996-06-06 Charge transfer sense amplifier

Publications (1)

Publication Number Publication Date
TW344074B true TW344074B (en) 1998-11-01

Family

ID=24645185

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086109941A TW344074B (en) 1996-06-06 1997-07-15 Charge transfer sense amplifier

Country Status (6)

Country Link
US (1) US5668765A (zh)
EP (1) EP0846326A1 (zh)
JP (1) JPH11510944A (zh)
KR (1) KR19990036155A (zh)
TW (1) TW344074B (zh)
WO (1) WO1997047011A1 (zh)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970051285A (ko) * 1995-12-30 1997-07-29 김주용 센스 증폭기의 차동 전압 증가 장치
EP0798732B1 (en) * 1996-03-29 2003-02-05 STMicroelectronics S.r.l. Gain modulated sense amplifier, particularly for memory devices
KR100230747B1 (ko) * 1996-11-22 1999-11-15 김영환 반도체 메모리장치의 저전력 감지증폭기(Low power sense amplifier in a semiconductor device)
JPH10255480A (ja) * 1997-03-14 1998-09-25 Oki Electric Ind Co Ltd センスアンプ
US5841718A (en) * 1997-08-08 1998-11-24 Mosel Vitelic, Inc. Use of voltage equalization in signal-sensing circuits
US5982690A (en) * 1998-04-15 1999-11-09 Cirrus Logic, Inc. Static low-power differential sense amplifier circuits, systems and methods
US6816554B1 (en) 1999-07-12 2004-11-09 Intel Corporation Communication bus for low voltage swing data signals
US6456121B2 (en) * 1999-07-12 2002-09-24 Intel Corporation Sense amplifier for integrated circuits using PMOS transistors
KR100335119B1 (ko) * 1999-07-21 2002-05-04 박종섭 불휘발성 강유전체 메모리 장치
TW499794B (en) 2000-05-05 2002-08-21 Ind Tech Res Inst Receiver and transmitter for signal transmission
DE10132920B4 (de) * 2001-07-06 2005-04-14 Infineon Technologies Ag Speichervorrichtung mit einer Speicherzelle und einer Bewertungsschaltung
US6566943B1 (en) 2001-12-26 2003-05-20 Ami Semiconductor, Inc. Reference-free charge transfer amplifier
US6678199B1 (en) * 2002-06-19 2004-01-13 Micron Technology, Inc. Memory device with sense amp equilibration circuit
US6903987B2 (en) * 2002-08-01 2005-06-07 T-Ram, Inc. Single data line sensing scheme for TCCT-based memory cells
US7324394B1 (en) 2002-08-01 2008-01-29 T-Ram Semiconductor, Inc. Single data line sensing scheme for TCCT-based memory cells
JP4075777B2 (ja) * 2003-11-19 2008-04-16 沖電気工業株式会社 コンパレータ回路
US20060250162A1 (en) * 2005-04-18 2006-11-09 Samsung Electronics Co., Ltd. Signal amplification circuit for high-speed operation and semiconductor memory device having the same
JP4901211B2 (ja) * 2005-12-26 2012-03-21 株式会社東芝 センスアンプ及び半導体記憶装置
US8866556B2 (en) 2009-02-27 2014-10-21 Analog Bits, Inc. Phase shift phase locked loop
WO2010106325A2 (en) * 2009-03-18 2010-09-23 Omnipharm Limited Parasiticidal formulation
US8742957B2 (en) 2010-12-15 2014-06-03 Analog Bits, Inc. Multi-variable multi-wire interconnect

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8602295A (nl) * 1986-09-11 1988-04-05 Philips Nv Halfgeleidergeheugenschakeling met snelle uitleesversterker tristatebusdrijver.
US5253137A (en) * 1989-05-31 1993-10-12 U.S. Philips Corp. Integrated circuit having a sense amplifier
JPH06119784A (ja) * 1992-10-07 1994-04-28 Hitachi Ltd センスアンプとそれを用いたｓｒａｍとマイクロプロセッサ
US5384504A (en) * 1992-10-22 1995-01-24 Dickinson; Alexander G. Sense amplifier powered from bit lines and having regeneratively cross-coupling means
JPH06338191A (ja) * 1993-05-28 1994-12-06 Oki Electric Ind Co Ltd センス増幅回路及びその駆動方法
JP3297949B2 (ja) * 1993-06-30 2002-07-02 ソニー株式会社 Ｃｍｏｓカレントセンスアンプ
JP2738306B2 (ja) * 1994-09-08 1998-04-08 日本電気株式会社 差動型センスアンプとそれを用いたスタティックｒａｍ及びデータ伝送回路

Also Published As

Publication number Publication date
US5668765A (en) 1997-09-16
WO1997047011A1 (en) 1997-12-11
KR19990036155A (ko) 1999-05-25
JPH11510944A (ja) 1999-09-21
EP0846326A1 (en) 1998-06-10

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