TW343357B - Projection exposure device, projection exposure method, mask pattern for amplitude aberration evaluation, amplitude aberration evaluation method - Google Patents

Projection exposure device, projection exposure method, mask pattern for amplitude aberration evaluation, amplitude aberration evaluation method

Info

Publication number
TW343357B
TW343357B TW086113652A TW86113652A TW343357B TW 343357 B TW343357 B TW 343357B TW 086113652 A TW086113652 A TW 086113652A TW 86113652 A TW86113652 A TW 86113652A TW 343357 B TW343357 B TW 343357B
Authority
TW
Taiwan
Prior art keywords
projection exposure
aberration evaluation
amplitude aberration
semi
reflector
Prior art date
Application number
TW086113652A
Other languages
English (en)
Inventor
Kazuya Kamon
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW343357B publication Critical patent/TW343357B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW086113652A 1997-06-02 1997-09-19 Projection exposure device, projection exposure method, mask pattern for amplitude aberration evaluation, amplitude aberration evaluation method TW343357B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14409097A JP3784136B2 (ja) 1997-06-02 1997-06-02 投影露光装置および投影露光方法

Publications (1)

Publication Number Publication Date
TW343357B true TW343357B (en) 1998-10-21

Family

ID=15353995

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086113652A TW343357B (en) 1997-06-02 1997-09-19 Projection exposure device, projection exposure method, mask pattern for amplitude aberration evaluation, amplitude aberration evaluation method

Country Status (6)

Country Link
US (1) US6061188A (zh)
JP (1) JP3784136B2 (zh)
KR (1) KR100274371B1 (zh)
CN (2) CN1179245C (zh)
DE (1) DE19748503B4 (zh)
TW (1) TW343357B (zh)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09167731A (ja) * 1995-12-14 1997-06-24 Mitsubishi Electric Corp 投影露光装置、収差評価用マスクパタン、収差量評価方法、収差除去フィルター及び半導体装置の製造方法
KR100549776B1 (ko) * 1999-07-01 2006-02-06 에이에스엠엘 네델란즈 비.브이. 공간필터링을 통한 이미지향상의 장치 및 방법
JP4671473B2 (ja) * 2000-07-14 2011-04-20 ルネサスエレクトロニクス株式会社 マスクデータ補正装置、転写用マスクの製造方法、および、パターン構造を有する装置の製造方法
TW591694B (en) * 2001-02-13 2004-06-11 Nikon Corp Specification determining method, making method and adjusting method of projection optical system, exposure apparatus and making method thereof, and computer system
JP4923370B2 (ja) * 2001-09-18 2012-04-25 株式会社ニコン 照明光学系、露光装置、及びマイクロデバイスの製造方法
EP1324136A1 (en) * 2001-12-28 2003-07-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
KR100425479B1 (ko) * 2002-05-02 2004-03-30 삼성전자주식회사 노광 장치의 투영렌즈계의 수차 평가용 마스크
JP4005881B2 (ja) * 2002-08-30 2007-11-14 株式会社東芝 露光装置の検査方法
JP4280509B2 (ja) * 2003-01-31 2009-06-17 キヤノン株式会社 投影露光用マスク、投影露光用マスクの製造方法、投影露光装置および投影露光方法
DE10329793A1 (de) * 2003-07-01 2005-01-27 Carl Zeiss Smt Ag Projektionsobjektiv für eine mikrolithographische Projektionsbelichtungsanlage
US7052795B2 (en) * 2004-04-06 2006-05-30 Angstrom Power Compact chemical reactor
DE102004019595A1 (de) * 2004-04-22 2005-11-10 Infineon Technologies Ag Blende mit lichtdurchlässigen und lichtundurchlässigen Gebieten für einen Belichtungsapparat und Verfahren zum Herstellen der Blende
US7817250B2 (en) 2007-07-18 2010-10-19 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus
EP2188673A1 (en) * 2007-08-03 2010-05-26 Carl Zeiss SMT AG Projection objective for microlithography, projection exposure apparatus, projection exposure method and optical correction plate
NL1036647A1 (nl) 2008-04-16 2009-10-19 Asml Netherlands Bv A method of measuring a lithographic projection apparatus.
ITTO20110323A1 (it) * 2011-04-08 2012-10-09 Thales Alenia Space Italia S P A C On Unico Socio Sistema metrologico ottico proiettivo grossolano e di precisione
EP2899583A3 (en) * 2014-01-26 2015-08-12 Matthew Stefan Muller Periodic fringe imaging with structured pattern illumination and electronic rolling shutter detection
KR102225162B1 (ko) 2020-06-19 2021-03-09 (주)브이텍 진공 시스템용 에어-밸브 유닛

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5748731A (en) * 1980-09-08 1982-03-20 Matsushita Electronics Corp Manufacture of mask
US4936665A (en) * 1987-10-25 1990-06-26 Whitney Theodore R High resolution imagery systems and methods
US5241423A (en) * 1990-07-11 1993-08-31 International Business Machines Corporation High resolution reduction catadioptric relay lens
EP0502679B1 (en) * 1991-03-04 2001-03-07 AT&T Corp. Semiconductor integrated circuit fabrication utilizing latent imagery
US5668673A (en) * 1991-08-05 1997-09-16 Nikon Corporation Catadioptric reduction projection optical system
US5251070A (en) * 1991-09-28 1993-10-05 Nikon Corporation Catadioptric reduction projection optical system
JP3085481B2 (ja) * 1991-09-28 2000-09-11 株式会社ニコン 反射屈折縮小投影光学系、及び該光学系を備えた露光装置
JPH05297277A (ja) * 1992-04-21 1993-11-12 Olympus Optical Co Ltd 反射光学系
JP2698521B2 (ja) * 1992-12-14 1998-01-19 キヤノン株式会社 反射屈折型光学系及び該光学系を備える投影露光装置
JP2750062B2 (ja) * 1992-12-14 1998-05-13 キヤノン株式会社 反射屈折型光学系及び該光学系を備える投影露光装置
JP3463335B2 (ja) * 1994-02-17 2003-11-05 株式会社ニコン 投影露光装置
JP3395801B2 (ja) * 1994-04-28 2003-04-14 株式会社ニコン 反射屈折投影光学系、走査型投影露光装置、及び走査投影露光方法
US5793473A (en) * 1994-06-09 1998-08-11 Nikon Corporation Projection optical apparatus for projecting a mask pattern onto the surface of a target projection object and projection exposure apparatus using the same
JP2684994B2 (ja) * 1994-08-11 1997-12-03 日本電気株式会社 微細パターン形成方法
JPH08179216A (ja) * 1994-12-27 1996-07-12 Nikon Corp 反射屈折光学系

Also Published As

Publication number Publication date
KR100274371B1 (ko) 2000-12-15
KR19990006298A (ko) 1999-01-25
CN1204071A (zh) 1999-01-06
CN1179245C (zh) 2004-12-08
DE19748503A1 (de) 1998-12-03
CN1542914A (zh) 2004-11-03
US6061188A (en) 2000-05-09
DE19748503B4 (de) 2005-10-06
JPH10335224A (ja) 1998-12-18
JP3784136B2 (ja) 2006-06-07

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees