TW335493B - Matrix-memory in virtual-ground-architecture - Google Patents

Matrix-memory in virtual-ground-architecture

Info

Publication number
TW335493B
TW335493B TW086110587A TW86110587A TW335493B TW 335493 B TW335493 B TW 335493B TW 086110587 A TW086110587 A TW 086110587A TW 86110587 A TW86110587 A TW 86110587A TW 335493 B TW335493 B TW 335493B
Authority
TW
Taiwan
Prior art keywords
programmed
power
resistance
column
memory
Prior art date
Application number
TW086110587A
Other languages
English (en)
Inventor
Roland Thewes Dr
Von Basse Paul-Werner
Michael Bollu Dr
Doris Schmitt-Landsiedel Dr
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of TW335493B publication Critical patent/TW335493B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G11C17/126—Virtual ground arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5692—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency read-only digital stores using storage elements with more than two stable states
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0491—Virtual ground arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/563—Multilevel memory reading aspects
    • G11C2211/5631—Concurrent multilevel reading of more than one cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/563—Multilevel memory reading aspects
    • G11C2211/5634—Reference cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006—Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
TW086110587A 1996-08-01 1997-07-25 Matrix-memory in virtual-ground-architecture TW335493B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19631169A DE19631169C2 (de) 1996-08-01 1996-08-01 Matrix-Speicher in Virtual-ground-Architektur

Publications (1)

Publication Number Publication Date
TW335493B true TW335493B (en) 1998-07-01

Family

ID=7801552

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086110587A TW335493B (en) 1996-08-01 1997-07-25 Matrix-memory in virtual-ground-architecture

Country Status (6)

Country Link
US (1) US5831892A (zh)
EP (1) EP0825613A3 (zh)
JP (1) JPH1069794A (zh)
CN (1) CN1175775A (zh)
DE (1) DE19631169C2 (zh)
TW (1) TW335493B (zh)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6154864A (en) * 1998-05-19 2000-11-28 Micron Technology, Inc. Read only memory embedded in a dynamic random access memory
US6438018B1 (en) * 1999-10-05 2002-08-20 Winbond Electronics Corporation Via code Mask ROM
US20040226041A1 (en) * 2000-02-18 2004-11-11 Xsides Corporation System and method for parallel data display of multiple executing environments
US6861714B2 (en) * 2001-04-18 2005-03-01 Samsung Electronics Co., Ltd. High-speed programmable read-only memory (PROM) devices
FR2826170B1 (fr) * 2001-06-15 2003-12-12 Dolphin Integration Sa Memoire rom a points memoire multibit
JP3734726B2 (ja) * 2001-07-17 2006-01-11 松下電器産業株式会社 読み出し専用メモリ
US6385079B1 (en) * 2001-08-31 2002-05-07 Hewlett-Packard Company Methods and structure for maximizing signal to noise ratio in resistive array
US6603693B2 (en) 2001-12-12 2003-08-05 Micron Technology, Inc. DRAM with bias sensing
US6747889B2 (en) * 2001-12-12 2004-06-08 Micron Technology, Inc. Half density ROM embedded DRAM
US6545899B1 (en) * 2001-12-12 2003-04-08 Micron Technology, Inc. ROM embedded DRAM with bias sensing
US20030115538A1 (en) * 2001-12-13 2003-06-19 Micron Technology, Inc. Error correction in ROM embedded DRAM
US20030185062A1 (en) * 2002-03-28 2003-10-02 Micron Technology, Inc. Proximity lookup for large arrays
US6785167B2 (en) * 2002-06-18 2004-08-31 Micron Technology, Inc. ROM embedded DRAM with programming
US6781867B2 (en) * 2002-07-11 2004-08-24 Micron Technology, Inc. Embedded ROM device using substrate leakage
US6865100B2 (en) * 2002-08-12 2005-03-08 Micron Technology, Inc. 6F2 architecture ROM embedded DRAM
US7174477B2 (en) * 2003-02-04 2007-02-06 Micron Technology, Inc. ROM redundancy in ROM embedded DRAM
US7755938B2 (en) * 2004-04-19 2010-07-13 Saifun Semiconductors Ltd. Method for reading a memory array with neighbor effect cancellation
KR100666174B1 (ko) * 2005-04-27 2007-01-09 삼성전자주식회사 3-레벨 불휘발성 반도체 메모리 장치 및 이에 대한구동방법
JP3913258B2 (ja) * 2005-06-30 2007-05-09 シャープ株式会社 半導体記憶装置
US7554856B2 (en) * 2006-10-06 2009-06-30 Qimonda Flash Gmbh & Co. Kg Memory cell

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4992980A (en) * 1989-08-07 1991-02-12 Intel Corporation Novel architecture for virtual ground high-density EPROMS
US5204835A (en) * 1990-06-13 1993-04-20 Waferscale Integration Inc. Eprom virtual ground array
JP2565104B2 (ja) * 1993-08-13 1996-12-18 日本電気株式会社 仮想接地型半導体記憶装置

Also Published As

Publication number Publication date
JPH1069794A (ja) 1998-03-10
US5831892A (en) 1998-11-03
DE19631169A1 (de) 1998-02-05
EP0825613A3 (de) 2002-01-23
EP0825613A2 (de) 1998-02-25
DE19631169C2 (de) 1998-07-23
CN1175775A (zh) 1998-03-11

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