TW328617B - Plasma processing device and plasma processing method - Google Patents

Plasma processing device and plasma processing method

Info

Publication number
TW328617B
TW328617B TW086103922A TW86103922A TW328617B TW 328617 B TW328617 B TW 328617B TW 086103922 A TW086103922 A TW 086103922A TW 86103922 A TW86103922 A TW 86103922A TW 328617 B TW328617 B TW 328617B
Authority
TW
Taiwan
Prior art keywords
plasma processing
processing device
microwave
specimen platform
processing method
Prior art date
Application number
TW086103922A
Other languages
English (en)
Inventor
Hirotsugu Umabuchi
Toshiyasu Hayamizu
Tomomi Murakami
Naohiko Takeda
Masumi Tsuyuguchi
Katsuo Katayama
Original Assignee
Sumitomo Metal Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP07346796A external-priority patent/JP3147769B2/ja
Priority claimed from JP01891297A external-priority patent/JP3204145B2/ja
Application filed by Sumitomo Metal Ind filed Critical Sumitomo Metal Ind
Application granted granted Critical
Publication of TW328617B publication Critical patent/TW328617B/zh

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/62—Plasma-deposition of organic layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32238—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • ing And Chemical Polishing (AREA)
TW086103922A 1996-03-28 1997-03-27 Plasma processing device and plasma processing method TW328617B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP07346796A JP3147769B2 (ja) 1996-03-28 1996-03-28 プラズマ処理装置および処理方法
JP01891297A JP3204145B2 (ja) 1997-01-31 1997-01-31 プラズマ処理装置

Publications (1)

Publication Number Publication Date
TW328617B true TW328617B (en) 1998-03-21

Family

ID=26355655

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086103922A TW328617B (en) 1996-03-28 1997-03-27 Plasma processing device and plasma processing method

Country Status (5)

Country Link
US (2) US5951887A (zh)
EP (2) EP0830052A4 (zh)
KR (2) KR100293033B1 (zh)
TW (1) TW328617B (zh)
WO (2) WO1997036461A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6358361B1 (en) 1998-06-19 2002-03-19 Sumitomo Metal Industries Limited Plasma processor

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6092486A (en) * 1996-05-27 2000-07-25 Sumimoto Metal Indsutries, Ltd. Plasma processing apparatus and plasma processing method
KR100263902B1 (ko) * 1998-04-20 2000-09-01 윤종용 표면 파 플라즈마 식각장치
KR100408259B1 (ko) * 1998-11-04 2004-01-24 엘지.필립스 엘시디 주식회사 공정챔버_
JP3430053B2 (ja) * 1999-02-01 2003-07-28 東京エレクトロン株式会社 プラズマ処理装置
JP4469054B2 (ja) * 2000-03-10 2010-05-26 サムコ株式会社 誘導結合形プラズマ処理装置
JP2002299240A (ja) * 2001-03-28 2002-10-11 Tadahiro Omi プラズマ処理装置
WO2003000559A1 (fr) * 2001-06-26 2003-01-03 Mitsubishi Shoji Plastics Corporation Dispositif de fabrication d'un recipient en plastique revetu d'un film de carbone sous forme de diamant amorphe, recipient ainsi obtenu et procede de fabrication dudit recipient
US6744212B2 (en) * 2002-02-14 2004-06-01 Lam Research Corporation Plasma processing apparatus and method for confining an RF plasma under very high gas flow and RF power density conditions
JP4008728B2 (ja) * 2002-03-20 2007-11-14 株式会社 液晶先端技術開発センター プラズマ処理装置
US6845734B2 (en) * 2002-04-11 2005-01-25 Micron Technology, Inc. Deposition apparatuses configured for utilizing phased microwave radiation
JP3723783B2 (ja) * 2002-06-06 2005-12-07 東京エレクトロン株式会社 プラズマ処理装置
WO2004017684A1 (ja) * 2002-08-14 2004-02-26 Tokyo Electron Limited プラズマ処理装置
JP4141764B2 (ja) * 2002-08-20 2008-08-27 東京エレクトロン株式会社 プラズマ処理装置
JP2004153240A (ja) 2002-10-09 2004-05-27 Advanced Lcd Technologies Development Center Co Ltd プラズマ処理装置
JP2004200307A (ja) * 2002-12-17 2004-07-15 Tokyo Electron Ltd プラズマ処理装置
JP4563729B2 (ja) * 2003-09-04 2010-10-13 東京エレクトロン株式会社 プラズマ処理装置
WO2005078782A1 (ja) * 2004-02-16 2005-08-25 Tokyo Electron Limited プラズマ処理装置及びプラズマ処理方法
US7845309B2 (en) * 2004-07-13 2010-12-07 Nordson Corporation Ultra high speed uniform plasma processing system
KR100887271B1 (ko) * 2004-12-17 2009-03-06 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
TW200640301A (en) * 2005-05-12 2006-11-16 Shimadzu Corp Surface wave plasma processing apparatus
KR100771508B1 (ko) * 2005-08-26 2007-10-31 주식회사 피에스엠 마이크로웨이브 플라즈마 방전 시스템
JP5082229B2 (ja) * 2005-11-29 2012-11-28 東京エレクトロン株式会社 プラズマ処理装置
WO2007088904A1 (ja) * 2006-01-31 2007-08-09 Tokyo Electron Limited マイクロ波プラズマ処理装置
JP4677918B2 (ja) * 2006-02-09 2011-04-27 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
KR100980529B1 (ko) * 2006-03-27 2010-09-06 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
JP4850592B2 (ja) * 2006-06-14 2012-01-11 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
EP2108714B1 (en) * 2007-01-29 2014-03-12 Sumitomo Electric Industries, Ltd. Microwave plasma cvd system
JP5475261B2 (ja) * 2008-03-31 2014-04-16 東京エレクトロン株式会社 プラズマ処理装置
DE102008034260B4 (de) * 2008-07-16 2014-06-26 Siltronic Ag Verfahren zum Abscheiden einer Schicht auf einer Halbleiterscheibe mittels CVD in einer Kammer und Kammer zum Abscheiden einer Schicht auf einer Halbleiterscheibe mittels CVD
US8415884B2 (en) * 2009-09-08 2013-04-09 Tokyo Electron Limited Stable surface wave plasma source
JP5835985B2 (ja) * 2010-09-16 2015-12-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
GB201021853D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
GB201021913D0 (en) 2010-12-23 2011-02-02 Element Six Ltd Microwave plasma reactors and substrates for synthetic diamond manufacture
GB201021870D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
GB201021855D0 (en) 2010-12-23 2011-02-02 Element Six Ltd Microwave power delivery system for plasma reactors
CN103370765B (zh) 2010-12-23 2016-09-07 六号元素有限公司 控制合成金刚石材料的掺杂
GB201021865D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
GB201021860D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for diamond synthesis
US20140248733A1 (en) * 2011-10-07 2014-09-04 Sharp Kabushiki Kaisha, Method of manufacturing photoelectric conversion device
JP2015130325A (ja) * 2013-12-03 2015-07-16 東京エレクトロン株式会社 誘電体窓、アンテナ、及びプラズマ処理装置
US9947516B2 (en) * 2014-06-03 2018-04-17 Tokyo Electron Limited Top dielectric quartz plate and slot antenna concept
CN107307848B (zh) * 2017-05-27 2021-04-06 天津海仁医疗技术有限公司 一种基于高速大范围扫描光学微造影成像的人脸识别及皮肤检测系统

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2472279A1 (fr) * 1979-12-18 1981-06-26 Thomson Csf Fenetre hyperfrequence et guide d'onde comportant une telle fenetre
JPS61241930A (ja) * 1985-04-18 1986-10-28 Matsushita Electric Ind Co Ltd プラズマｃｖｄ装置
JPS625600A (ja) * 1985-06-28 1987-01-12 住友金属工業株式会社 マイクロ波プラズマ処理装置
US5038712A (en) * 1986-09-09 1991-08-13 Canon Kabushiki Kaisha Apparatus with layered microwave window used in microwave plasma chemical vapor deposition process
JPH0267632A (ja) * 1988-09-01 1990-03-07 Hitachi Ltd 電子計算機における分岐命令構成法
JPH04117437A (ja) * 1990-09-07 1992-04-17 Yokohama Rubber Co Ltd:The ゴム配合用硫黄
DE69123808T2 (de) * 1990-09-26 1997-06-26 Hitachi Ltd Verfahren und Gerät zur Bearbeitung mittels Mikrowellenplasma
JPH04117437U (ja) * 1991-03-29 1992-10-21 住友金属工業株式会社 マイクロ波プラズマ装置
US5234526A (en) * 1991-05-24 1993-08-10 Lam Research Corporation Window for microwave plasma processing device
JP3375646B2 (ja) * 1991-05-31 2003-02-10 株式会社日立製作所 プラズマ処理装置
US5279669A (en) * 1991-12-13 1994-01-18 International Business Machines Corporation Plasma reactor for processing substrates comprising means for inducing electron cyclotron resonance (ECR) and ion cyclotron resonance (ICR) conditions
US5306985A (en) * 1992-07-17 1994-04-26 Sematech, Inc. ECR apparatus with magnetic coil for plasma refractive index control
JP3042208B2 (ja) * 1992-09-22 2000-05-15 住友金属工業株式会社 マイクロ波プラズマ処理装置
JPH06112138A (ja) * 1992-09-30 1994-04-22 Sumitomo Metal Ind Ltd マイクロ波プラズマ処理装置
JP3039160B2 (ja) * 1992-10-07 2000-05-08 住友金属工業株式会社 マイクロ波導入装置
JPH0786246A (ja) * 1993-09-16 1995-03-31 Hitachi Ltd マイクロ波プラズマエッチング装置
JPH083770A (ja) * 1994-06-14 1996-01-09 Nec Corp マイクロ波プラズマ処理装置
EP0688038B1 (en) * 1994-06-14 2001-12-19 Sumitomo Metal Industries, Ltd. Microwave plasma processing system
JP3171222B2 (ja) * 1994-06-14 2001-05-28 日本電気株式会社 マイクロ波プラズマ処理装置
JP3613817B2 (ja) * 1994-10-05 2005-01-26 株式会社日立製作所 プラズマ処理装置
JP3042347B2 (ja) * 1995-02-28 2000-05-15 住友金属工業株式会社 プラズマ装置
US5645644A (en) * 1995-10-20 1997-07-08 Sumitomo Metal Industries, Ltd. Plasma processing apparatus
JPH09232099A (ja) * 1996-02-20 1997-09-05 Hitachi Ltd プラズマ処理装置
US5874706A (en) * 1996-09-26 1999-02-23 Tokyo Electron Limited Microwave plasma processing apparatus using a hybrid microwave having two different modes of oscillation or branched microwaves forming a concentric electric field

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6358361B1 (en) 1998-06-19 2002-03-19 Sumitomo Metal Industries Limited Plasma processor

Also Published As

Publication number Publication date
EP0830052A1 (en) 1998-03-18
EP0830052A4 (en) 2000-02-02
KR19990014798A (ko) 1999-02-25
KR100293034B1 (ko) 2001-06-15
EP0831680A4 (en) 2000-02-02
KR19990014799A (ko) 1999-02-25
WO1997036462A1 (fr) 1997-10-02
WO1997036461A1 (fr) 1997-10-02
US6091045A (en) 2000-07-18
US5951887A (en) 1999-09-14
EP0831680A1 (en) 1998-03-25
KR100293033B1 (ko) 2001-06-15

Similar Documents

Publication Publication Date Title
TW328617B (en) Plasma processing device and plasma processing method
TW376547B (en) Method and apparatus for plasma processing
TW335517B (en) Apparatus and method for processing plasma
TW353195B (en) Plasma processing system
TW326616B (en) Plasma processing method and apparatus
GEP20012393B (en) Method and Apparatus for Reducing the By-Products in Carbonaceous Materials
TW325582B (en) Plasma treatment device and plasma treatment method
EP0702393A3 (en) Plasma processing apparatus for introducing a micrometric wave from a rectangular waveguide, through an elongated sheet into the plasma chamber
ATE252311T1 (de) Durch mikrowellen gesteuertes plasmaspritzgerät und spritzverfahren
TW283250B (en) Plasma enhanced chemical processing reactor and method
CA2444766A1 (en) Method and apparatus for sequential plasma treatment
TW501842U (en) Structure for incorporationg an inductively coupled plasma source in plasma processing chamber
TW327267B (en) RF induction plasma source for plasma processing
EP0415122A3 (en) Method and apparatus for film formation by high pressure microwave plasma chemical vapour deposition
AU5260898A (en) Method and apparatus for powering an electrodeless lamp with reduced radio frequency interference
DE69416489D1 (de) Mikrowellenplasma-Bearbeitungsvorrichtung und -verfahren
DE69638009D1 (de) Vorrichtung zur verhütung eines lichtbogens beim sputtern
WO1999039751A3 (de) Verfahren zum behandeln eines gutes mit elektrononbestrahlung
EP0764969A3 (en) Microwave plasma processing apparatus and microwave plasma processing method
CA2248250A1 (en) Device for generating powerful microwave plasmas
HU9402241D0 (en) Method and apparatus for the controlled reduction of organic material
GB2213636B (en) Apparatus for introducing samples into an inductively coupled,plasma source mass spectrometer
AU4608796A (en) High frequency induction plasma method and apparatus
AU5100893A (en) Igniter for microwave energized plasma processing apparatus
KR910010753A (ko) 전자사이클로트론 공명을 사용한 플라즈마처리방법 및 장치

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees