TW313677B - - Google Patents
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- Publication number
- TW313677B TW313677B TW081106356A TW81106356A TW313677B TW 313677 B TW313677 B TW 313677B TW 081106356 A TW081106356 A TW 081106356A TW 81106356 A TW81106356 A TW 81106356A TW 313677 B TW313677 B TW 313677B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- semiconductor
- manufacturing
- item
- patent application
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims description 187
- 239000003990 capacitor Substances 0.000 claims description 80
- 238000004519 manufacturing process Methods 0.000 claims description 75
- 239000000463 material Substances 0.000 claims description 72
- 238000000034 method Methods 0.000 claims description 70
- 239000010408 film Substances 0.000 claims description 48
- 150000002500 ions Chemical class 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 44
- 239000012535 impurity Substances 0.000 claims description 37
- 239000004020 conductor Substances 0.000 claims description 30
- 238000009413 insulation Methods 0.000 claims description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 21
- 239000010703 silicon Substances 0.000 claims description 21
- 238000003860 storage Methods 0.000 claims description 21
- 239000002131 composite material Substances 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 238000001312 dry etching Methods 0.000 claims description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 238000012546 transfer Methods 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000002309 gasification Methods 0.000 claims description 3
- 239000007943 implant Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 229910052704 radon Inorganic materials 0.000 claims description 2
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 claims description 2
- 239000002023 wood Substances 0.000 claims 4
- 238000013329 compounding Methods 0.000 claims 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 230000000875 corresponding effect Effects 0.000 claims 2
- 239000011810 insulating material Substances 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 241000208340 Araliaceae Species 0.000 claims 1
- 244000241257 Cucumis melo Species 0.000 claims 1
- 235000015510 Cucumis melo subsp melo Nutrition 0.000 claims 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 claims 1
- 235000003140 Panax quinquefolius Nutrition 0.000 claims 1
- FJJCIZWZNKZHII-UHFFFAOYSA-N [4,6-bis(cyanoamino)-1,3,5-triazin-2-yl]cyanamide Chemical compound N#CNC1=NC(NC#N)=NC(NC#N)=N1 FJJCIZWZNKZHII-UHFFFAOYSA-N 0.000 claims 1
- 239000011231 conductive filler Substances 0.000 claims 1
- 230000002079 cooperative effect Effects 0.000 claims 1
- 238000005520 cutting process Methods 0.000 claims 1
- 239000002019 doping agent Substances 0.000 claims 1
- 238000000407 epitaxy Methods 0.000 claims 1
- 235000008434 ginseng Nutrition 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 150000002825 nitriles Chemical class 0.000 claims 1
- RJCRUVXAWQRZKQ-UHFFFAOYSA-N oxosilicon;silicon Chemical compound [Si].[Si]=O RJCRUVXAWQRZKQ-UHFFFAOYSA-N 0.000 claims 1
- 238000002360 preparation method Methods 0.000 claims 1
- 239000009874 shenqi Substances 0.000 claims 1
- 241000894007 species Species 0.000 claims 1
- 238000000992 sputter etching Methods 0.000 claims 1
- 230000008961 swelling Effects 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- -1 phosphorous ions Chemical class 0.000 description 8
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 5
- 239000012528 membrane Substances 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000012937 correction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 241000238631 Hexapoda Species 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241000196324 Embryophyta Species 0.000 description 1
- 235000006040 Prunus persica var persica Nutrition 0.000 description 1
- 240000006413 Prunus persica var. persica Species 0.000 description 1
- 241000362909 Smilax <beetle> Species 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000013014 purified material Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
- H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
- H10B12/0383—Making the capacitor or connections thereto the capacitor being in a trench in the substrate wherein the transistor is vertical
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910014048A KR940005895B1 (ko) | 1991-08-14 | 1991-08-14 | 디램 셀의 구조 및 제조방법 |
| KR1019910018278A KR0124566B1 (ko) | 1991-10-17 | 1991-10-17 | 디램셀의 제조방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW313677B true TW313677B (pt) | 1997-08-21 |
Family
ID=26628705
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW081106356A TW313677B (pt) | 1991-08-14 | 1992-08-11 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5272102A (pt) |
| JP (1) | JP3364244B2 (pt) |
| DE (1) | DE4226996A1 (pt) |
| TW (1) | TW313677B (pt) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5369049A (en) * | 1993-12-17 | 1994-11-29 | International Business Machines Corporation | DRAM cell having raised source, drain and isolation |
| US5384277A (en) * | 1993-12-17 | 1995-01-24 | International Business Machines Corporation | Method for forming a DRAM trench cell capacitor having a strap connection |
| US5451809A (en) * | 1994-09-07 | 1995-09-19 | Kabushiki Kaisha Toshiba | Smooth surface doped silicon film formation |
| KR100206885B1 (ko) * | 1995-12-30 | 1999-07-01 | 구본준 | 트렌치 캐패시터 메모리셀 제조방법 |
| DE19620625C1 (de) * | 1996-05-22 | 1997-10-23 | Siemens Ag | DRAM-Zellenanordnung und Verfahren zu deren Herstellung |
| US6570207B2 (en) | 2000-12-13 | 2003-05-27 | International Business Machines Corporation | Structure and method for creating vertical capacitor and anti-fuse in DRAM process employing vertical array device cell complex |
| TWI455291B (zh) * | 2009-10-30 | 2014-10-01 | Inotera Memories Inc | 垂直式電晶體及其製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60261165A (ja) * | 1984-06-08 | 1985-12-24 | Hitachi Ltd | Ｍｏｓダイナミツクメモリ素子 |
| US4713678A (en) * | 1984-12-07 | 1987-12-15 | Texas Instruments Incorporated | dRAM cell and method |
| US4649625A (en) * | 1985-10-21 | 1987-03-17 | International Business Machines Corporation | Dynamic memory device having a single-crystal transistor on a trench capacitor structure and a fabrication method therefor |
| US4816884A (en) * | 1987-07-20 | 1989-03-28 | International Business Machines Corporation | High density vertical trench transistor and capacitor memory cell structure and fabrication method therefor |
| US4833516A (en) * | 1987-08-03 | 1989-05-23 | International Business Machines Corporation | High density memory cell structure having a vertical trench transistor self-aligned with a vertical trench capacitor and fabrication methods therefor |
| US4988637A (en) * | 1990-06-29 | 1991-01-29 | International Business Machines Corp. | Method for fabricating a mesa transistor-trench capacitor memory cell structure |
| US5013680A (en) * | 1990-07-18 | 1991-05-07 | Micron Technology, Inc. | Process for fabricating a DRAM array having feature widths that transcend the resolution limit of available photolithography |
-
1992
- 1992-08-11 TW TW081106356A patent/TW313677B/zh active
- 1992-08-14 US US07/930,938 patent/US5272102A/en not_active Expired - Lifetime
- 1992-08-14 JP JP23764192A patent/JP3364244B2/ja not_active Expired - Fee Related
- 1992-08-14 DE DE4226996A patent/DE4226996A1/de not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| JPH05226604A (ja) | 1993-09-03 |
| US5272102A (en) | 1993-12-21 |
| JP3364244B2 (ja) | 2003-01-08 |
| DE4226996A1 (de) | 1993-02-18 |
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