TW307921B - - Google Patents

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Publication number
TW307921B
TW307921B TW084111471A TW84111471A TW307921B TW 307921 B TW307921 B TW 307921B TW 084111471 A TW084111471 A TW 084111471A TW 84111471 A TW84111471 A TW 84111471A TW 307921 B TW307921 B TW 307921B
Authority
TW
Taiwan
Prior art keywords
diffusion layer
film
opening
gate electrode
crystal film
Prior art date
Application number
TW084111471A
Other languages
English (en)
Chinese (zh)
Original Assignee
Sharp Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kk filed Critical Sharp Kk
Application granted granted Critical
Publication of TW307921B publication Critical patent/TW307921B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10P14/46—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
TW084111471A 1995-04-14 1995-10-30 TW307921B (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7089356A JPH08288406A (ja) 1995-04-14 1995-04-14 半導体装置及びその製造方法

Publications (1)

Publication Number Publication Date
TW307921B true TW307921B (enExample) 1997-06-11

Family

ID=13968441

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084111471A TW307921B (enExample) 1995-04-14 1995-10-30

Country Status (4)

Country Link
US (1) US5814867A (enExample)
JP (1) JPH08288406A (enExample)
KR (1) KR100231763B1 (enExample)
TW (1) TW307921B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6440753B1 (en) * 2001-01-24 2002-08-27 Infineon Technologies North America Corp. Metal hard mask for ILD RIE processing of semiconductor memory devices to prevent oxidation of conductive lines
WO2003098698A1 (en) * 2002-05-17 2003-11-27 Matsushita Electric Industrial Co., Ltd. Semiconductor device and its manufacturing method
JP2007066958A (ja) * 2005-08-29 2007-03-15 Nec Electronics Corp 半導体装置の製造方法
US8716081B2 (en) * 2007-03-15 2014-05-06 Globalfoundries Singapore Pte. Ltd. Capacitor top plate over source/drain to form a 1T memory device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04334054A (ja) * 1991-05-09 1992-11-20 Mitsubishi Electric Corp 半導体装置、電界効果トランジスタおよびその製造方法
US5404326A (en) * 1992-06-30 1995-04-04 Sony Corporation Static random access memory cell structure having a thin film transistor load
US5422296A (en) * 1994-04-25 1995-06-06 Motorola, Inc. Process for forming a static-random-access memory cell

Also Published As

Publication number Publication date
JPH08288406A (ja) 1996-11-01
KR960039158A (ko) 1996-11-21
KR100231763B1 (ko) 1999-11-15
US5814867A (en) 1998-09-29

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees