KR100231763B1 - 반도체 장치 및 그의 제조방법 - Google Patents

반도체 장치 및 그의 제조방법 Download PDF

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Publication number
KR100231763B1
KR100231763B1 KR1019950043055A KR19950043055A KR100231763B1 KR 100231763 B1 KR100231763 B1 KR 100231763B1 KR 1019950043055 A KR1019950043055 A KR 1019950043055A KR 19950043055 A KR19950043055 A KR 19950043055A KR 100231763 B1 KR100231763 B1 KR 100231763B1
Authority
KR
South Korea
Prior art keywords
diffusion layer
opening
gate electrode
film
active region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019950043055A
Other languages
English (en)
Korean (ko)
Other versions
KR960039158A (ko
Inventor
사또시 사이또
Original Assignee
마찌다 가쯔히꼬
샤프 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 마찌다 가쯔히꼬, 샤프 가부시끼가이샤 filed Critical 마찌다 가쯔히꼬
Publication of KR960039158A publication Critical patent/KR960039158A/ko
Application granted granted Critical
Publication of KR100231763B1 publication Critical patent/KR100231763B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
KR1019950043055A 1995-04-14 1995-11-17 반도체 장치 및 그의 제조방법 Expired - Fee Related KR100231763B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7089356A JPH08288406A (ja) 1995-04-14 1995-04-14 半導体装置及びその製造方法
JP95-089356 1995-04-14

Publications (2)

Publication Number Publication Date
KR960039158A KR960039158A (ko) 1996-11-21
KR100231763B1 true KR100231763B1 (ko) 1999-11-15

Family

ID=13968441

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950043055A Expired - Fee Related KR100231763B1 (ko) 1995-04-14 1995-11-17 반도체 장치 및 그의 제조방법

Country Status (4)

Country Link
US (1) US5814867A (enExample)
JP (1) JPH08288406A (enExample)
KR (1) KR100231763B1 (enExample)
TW (1) TW307921B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6440753B1 (en) * 2001-01-24 2002-08-27 Infineon Technologies North America Corp. Metal hard mask for ILD RIE processing of semiconductor memory devices to prevent oxidation of conductive lines
JPWO2003098698A1 (ja) * 2002-05-17 2005-09-22 松下電器産業株式会社 半導体装置及びその製造方法
JP2007066958A (ja) * 2005-08-29 2007-03-15 Nec Electronics Corp 半導体装置の製造方法
US8716081B2 (en) * 2007-03-15 2014-05-06 Globalfoundries Singapore Pte. Ltd. Capacitor top plate over source/drain to form a 1T memory device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04334054A (ja) * 1991-05-09 1992-11-20 Mitsubishi Electric Corp 半導体装置、電界効果トランジスタおよびその製造方法
US5404326A (en) * 1992-06-30 1995-04-04 Sony Corporation Static random access memory cell structure having a thin film transistor load
US5422296A (en) * 1994-04-25 1995-06-06 Motorola, Inc. Process for forming a static-random-access memory cell

Also Published As

Publication number Publication date
US5814867A (en) 1998-09-29
KR960039158A (ko) 1996-11-21
JPH08288406A (ja) 1996-11-01
TW307921B (enExample) 1997-06-11

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