TW303483B - - Google Patents

Download PDF

Info

Publication number
TW303483B
TW303483B TW85100485A TW85100485A TW303483B TW 303483 B TW303483 B TW 303483B TW 85100485 A TW85100485 A TW 85100485A TW 85100485 A TW85100485 A TW 85100485A TW 303483 B TW303483 B TW 303483B
Authority
TW
Taiwan
Prior art keywords
substrate
bonded
crystal
manufacturing
cut
Prior art date
Application number
TW85100485A
Other languages
English (en)
Chinese (zh)
Original Assignee
Komatsu Denshi Kinzoku Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Denshi Kinzoku Kk filed Critical Komatsu Denshi Kinzoku Kk
Application granted granted Critical
Publication of TW303483B publication Critical patent/TW303483B/zh

Links

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
  • Recrystallisation Techniques (AREA)
TW85100485A 1994-09-30 1996-01-16 TW303483B (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27417894A JPH08107193A (ja) 1994-09-30 1994-09-30 Ｓｏｉ基板の製造方法

Publications (1)

Publication Number Publication Date
TW303483B true TW303483B (ko) 1997-04-21

Family

ID=17538129

Family Applications (1)

Application Number Title Priority Date Filing Date
TW85100485A TW303483B (ko) 1994-09-30 1996-01-16

Country Status (2)

Country Link
JP (1) JPH08107193A (ko)
TW (1) TW303483B (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2869455B1 (fr) * 2004-04-27 2006-07-14 Soitec Silicon On Insulator Procede de fabrication de puces et support associe
FR2935536B1 (fr) * 2008-09-02 2010-09-24 Soitec Silicon On Insulator Procede de detourage progressif
JP5519256B2 (ja) 2009-12-03 2014-06-11 株式会社荏原製作所 裏面が研削された基板を研磨する方法および装置
CN110854011A (zh) * 2019-09-30 2020-02-28 芯盟科技有限公司 堆叠键合晶圆的处理方法
JP7339905B2 (ja) * 2020-03-13 2023-09-06 キオクシア株式会社 貼合装置および貼合方法

Also Published As

Publication number Publication date
JPH08107193A (ja) 1996-04-23

Similar Documents

Publication Publication Date Title
JP3645528B2 (ja) 研磨方法及び半導体装置の製造方法
JP3169120B2 (ja) 半導体鏡面ウェーハの製造方法
KR100789205B1 (ko) 실리콘 웨이퍼 및 에스오아이 웨이퍼의 제조방법, 그리고그 에스오아이 웨이퍼
JP4846915B2 (ja) 貼り合わせウェーハの製造方法
US6352927B2 (en) Semiconductor wafer and method for fabrication thereof
TW459297B (en) Method of processing semiconductor wafers to build in back surface damage
JP3925580B2 (ja) ウェーハ加工装置および加工方法
JPH0636414B2 (ja) 半導体素子形成用基板の製造方法
TW200425222A (en) Laminated substrate, method of manufacturing the substrate, and wafer outer periphery pressing jigs used for the method
JP3328193B2 (ja) 半導体ウエーハの製造方法
US6465328B1 (en) Semiconductor wafer manufacturing method
TW303483B (ko)
JPH0917984A (ja) 貼り合わせｓｏｉ基板の製造方法
JP3216583B2 (ja) 貼り合わせｓｏｉ基板の製造方法
JP2006303329A (ja) シリコン基板の薄板加工方法およびそれに用いられる加工装置
JP2010239161A (ja) 半導体集積回路装置の製造方法
JPH08107092A (ja) Ｓｏｉ基板の製造方法
JP3336191B2 (ja) 半導体ウェ−ハの製造方法
JPH0897111A (ja) Ｓｏｉ基板の製造方法
TW300318B (ko)
JP2000158304A (ja) 平面研削方法及び鏡面研磨方法
JP5564785B2 (ja) 貼り合わせ基板の製造方法
JP2007013012A (ja) 太陽電池用シリコンウェーハの端面の面取り加工方法
JPH0387012A (ja) 接合ウエハおよびその製造方法
JP2005072072A (ja) 剥離ウェーハの再生処理方法及び再生されたウェーハ