TW272311B - - Google Patents
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- TW272311B TW272311B TW083109384A TW83109384A TW272311B TW 272311 B TW272311 B TW 272311B TW 083109384 A TW083109384 A TW 083109384A TW 83109384 A TW83109384 A TW 83109384A TW 272311 B TW272311 B TW 272311B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
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- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
- H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
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- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
Description
272311 A7 ___B7_ 五、發明説明(i ) 技術領域: 本發明係關於電子裝置的球柵陣列(ball grid array )塑膠構裝之製造。 發明背景: 最近,William B. Mullen III在美國専利 5,2 4 1,1 3 3揭霣了一種銲墊栅陣列(pad grid array )塑膠構裝。此種構裝包含一樹脂製成的褫路承載 基底,賅基底的下面設有接觸墊栅陣列,且賅基底的上面 設有在電氣上及機械上都安裝於其上的一 I C單元。以下 注塑形方式將一保護塑膠上董塑製於骸I C單元上,並覆 蓋了基底的大部分上表面。在各接觸墊上形成銲球( solder balls),而構成可銲接到一主電路板的球柵陣列 Ο 經濟部中央標準局員工消费合作社印製 (請先閲讀背面之注意事項再填寫本頁) 然而,上述專利的製程係採用下注塑形(transfer molding),此種下注塑形雔被廣泛採用,但仍有某些缺 點。在下注塑形中,係在壓力下糴使塑膠材料通過若干澆 道口(gates)而進入金屬塑棋中,胲金属塑模設有若干 凹部,用以界定待生產上董的形狀。下注塑形的一個主要 缺點即是製造金屬塑模時的成本及時間延遢。在需要準備 用於不同尺寸的構裝之塑模時,或要在單一下注塑形結構 中容納若干塑模單元時*此種缺點將更爲凸顯。也有可能 因熔化的熱塑性材枓,而損及在電氣上將I C單元連接到 基底上表面金屬線路的導線。還有可能因硬化製程中塑膠 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) 272311 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明(2 ) 材料的收縮,而使基底》形。 因而很明顓地,現在亟醫一種球柵陣列塑膠構裝,此 種構裝須易於以大量生產的方式構建及生產,且須可配合 I C單‘元而自行裝配,以供迅速推出I C原型。 發明概述: 銲墊柵陣列塑膠構裝包含一叠層塑膠本髏,該叠層塑 膠本髗設有一位於中央的凹穴,一黏著在該凹穴的I C單 元,以及一包封該凹穴的密封有機聚合物(例如環氧樹脂 )。叠層本«包含一基底,及一在基底上面的結構構件, 該結構構件具有一形成凹穴的位於中央之開口。基底設有 :在該基底兩個平表面上的金觸線路;在氰氣上連接到各 金属線路的若干鍍穿通孔(through-pUted vias);以 及在基底下表面上的接觸墊柵陣列,賅接觸墊柵陣列係在 電氣上連接到金屬線路。結構構件使叠片具有强度及剛度 ,且結構梅件的厚度足以在用密封聚合物包封空穴時保護 I C單元。本發明亦揭霣了一種利用包含一凹穴,若干金 屬線路,及柵銲墊陣列的叠片製造構裝之方法,以供用於 裝配該構裝。 附圖簡述: 圖1是塑膠構裝之部分切除透視圖; 圖2是塑膠構裝底部的典型平視示意圖,圖中示出一 銲蟄柵陣列,若干金靥線路,以及若干通孔; 本紙張尺度適用中國國家揉準(CNS ) A4規格(210X297公釐) 莽-- (請先閲讀背面之注意事項再填寫本頁) -β
經濟部中央樣準局員工消費合作杜印製 272311 A7 __B7___ 五、發明説明(3 ) 圓3是沿著圖1所示完整構裝的横斷面側視騸: 圖4是ft屠步騄前的構裝預組合件中各組件之分解横 断面圖:以及 圖5是叠靨步驟後的預組合件中故組件之横斷面圔。 本發明之詳細說明: 圖1示出一完整銲埜柵陣列塑膠構裝(1 )之部分切 除透視圖。圔2示出構裝(1)之底視圖,钃3示出沿著 構裝3 - 3線之横断面側視圖。當各銲墊股有銲球時,此 一構裝即變成球柵陣列塑膠構裝。爲了便於脫明,各圖示 之尺寸並未依照原有比例。 構裝(1)包含一叠片(2) ,一 1C單元(3), 及一封膠(4)。該叠片包含一塑膠基底(5),一可硬 化塑膠預浸潰之織物片(6 ),及一塑膠結構構件(7 ) 。胲預浸溃樹脂嫌物片(prepreg)及結構構件皆設有一 開口,該開口與基底共同形成一凹穴(9 )。在本實施例 中,基底(5 )係一雙面基底,胲雙面基底分別在其上表 面(12)及下表面(13)設有金屬線路(10)及( 1 1 ),該雙面基底並設有金属銲墊(1 4 )。然而,爲 了提高電氣性能,可利用本門技術中所熟知的技術,在該 基底(5 )上設有額外的金屬線路層,而形成多層式基底 。並經由各鍍穿通孔(15),而提供基底上表面金屬線 路(10)與基底下表面金羼嫌路(11)間之《氣連接 。IC單元(3)係在凹穴之內接合到銲埜,並係利用黏 本紙張尺度適用中國國家橾準(CNS ) A4規格(210X297公釐) -6 - (請先閲讀背面之注意事項再填寫本頁) 訂 線 272311 A7 B7 經濟部中央標準局員工消费合作社印製 五、發明説明( 4 ) 著劑 ( 1 6 ) 將 此 I C 單 元 接合 到 銲 墊 0 然 後 利 用 若 干 金 I 線( 1 7 ) 9 在 電 氣 上 將 I C單 元 連 接 到 基 底 上 表 面 的 個 I 別金 屬 線 路 0 /·—S 請 1 1 | - 結 梅構 件 ( 7 ) 覆 董 賭 金屬 線 路 ( 1 0 ) 及 通 孔 ( 先 閱 I 讀 1 15 ) 的 末端 9 所未 覆 盖 到 的只 有 凹 穴 內 的 金 屬 線路 ( 背 面 1 1 1 0 ) 部 分 〇 然 後 以 封 膠 ( 4 ) 包封 I C 單 元 ( 3 ) 9 金 注 意 1 事 1 嫌( 1 7 ) 9 以 及 並 未 被 結 構構 件 ( 7 ) 覆 蓋 的 金 屬 嫌 路 項 再 1 I (1 0 ) 部 分 Ο 結構構件使 此構裝 具 有 强 度 及 剛 度 且 結 寫 本 裝 構構件 之 厚 度 足 以 確保封 膠 (4 ) 可 完 全 覆蓋 金線 ( 1 7 頁 1 1 1 如 圖 2 所 示 之 基 底 ( 5 )下 表 面 包含 接 觸 墊 ( 1 8 ) 1 1 | 陣列 9 且 道 些 接 觸 墊 ( 1 8 )係 配 置 成 特 定 的 形 態 0 金 m 訂 I 線路 ( 1 1 ) 將 各 接 觸 墊 ( 18 ) 連 接 到 通 孔 ( 1 5 ) 〇 1 1 I 各接 觸 墊 通 常 是 圃 形 9 但 亦 可採 用 其 他 形 狀 0 道 些 接 觸 墊 1 1 是用 來 作 爲 Jm 陣 列 構裝 與 主 電路 板 ( 圆 中 未 示 出 ) 間 之 電 1 1 一 氣連 接 〇 如 果 要 將 4ΠΠ THU 陣 列 構裝銲 接 到 主 電 路板 t 則 可 在 各 線 | 接觸 墊 上 設有銲 球 ( 1 9 ) 。此 時 可 將 一 銲 錫 遮 蔽 屜 ( 1 I 2 0 ) 置 於 構裝 的 下 表 面 ( 1 3 ) 9 而 霣 出 道 些 接 觸 墊 ( 1 1 1 18 ) 9 由 介 質 材料 構 成 的 銲錫 遮 蔽層 ( 2 0 ) 覆 蓋 了 金 1 1 I 靥線 路 ( 1 1 ) 及 通 孔 ( 1 5 ) 9 而 避 免 將 不 必 要 的 銲 錫 | . 1 沈稹 在 金 屬 線 路 上 〇 現 在 將 參 照 圖 4 及 5 脫 明此 構 裝 之 製 程 實 施例 〇 如 圖 1 ♦ I 4之 組件 分 解 圖 所 示 9 待 接 合成 叠 片 的 各 材料 片 被 裝 配 成 1 I 一預 組合件 ( 2 1 ) 0 道 些 材料片 的 尺 寸大 到 足 以 在單 一 1 1 1 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公羹) 272311 A7 B7 經濟部中央標準局員工消費合作杜印製 五、發明説明(5 ) 作業中產生多個構裝。道些材料片的尺寸只受限於將此預 組合件叠合成叠片(2 )時所用的壓型機。 預組合件(2 1 )包含一基底片(5 ),一接合片( 6),及一結構構件片(7)。材料片(5)及(7)通 常是由、C"階段('C# stage )的印刷接線板( Printed Wiring Board;簡稱PWB )材料所構成。接合 片(6 )是由、B·階段(stage)材料(或稱、 預浸溃樹脂織物片# ( ’prepreg# )材料)所構成。B 階段是熱硬化樹脂反應時的中間階段,此時材料受到應力 及加熱時將軟化,但並未完全處於熔接(fuse)狀態。B 階段材料通常與C階段材料的材質相同,但只是處於部分 硬化的狀態。 基底片(5 )設有金靥線路,該金臑線路包括上端金 屬線路(1 0 )及下端金屬線路(1 1 ),鍍穿通孔( 15),及1C單元之金屬接合墊(14)。基底片的下 表面亦包含若干接觸垫(1 8 ),用以在氰氣上連接到金 屬線路(11)(圖2)。接合片(6)及結構構件片( 7 )都設有開口( 8 )。此開口大到足以容納I c單元, 並露出相當部分的金屬線路(1 0 )末端,以便在後績的 裝配作業中將金線(1 7 )銲接到此末端部分。 將材料片(22) ,(23)及(24)的預組合件 (2 1 )放入叠層製程(圖中未示出)中,此時預組合件 將受到壓力及加熱,而將道些材料片叠合成如圓5所示的 單一叠片(2)。如果道些材料片的大小足以形成具有複 (請先閱讀背面之注意事項再填寫本頁) 裝.
-*1T 線 本紙張尺度適用中國國家橾準(CNS ) Α4规格(210父297公着;) 272311 A7 B7 經濟部中央標準局負工消費合作社印製 五、發明説明(6 ) 數個凹穴的叠片,則可將此叠片切割成對應的複數個單構 裝單元。不输是那一種情形,都將毎一單構裝叠片單元與 I C單元(3 )裝配在一起。此時係利用黏著劑(1 6 ) 將I C單元接合到銲墊(1 4 )。黏著劑可以是導電性或 非導電性的,道將取決於是否要在I C單元與銲墊之間提 供選擇性的電氣連接。 銲墊(1 4 )通常只是用於接合。在其他的一些情形 中,亦可將銲墊用來作爲敝熱片,以便將熱置導出I C單 元,或者可將銲墊用來作爲I C單元的接地連接裝置。在 此類其他的情形中,可利用鏟穿通孔,將銲墊連接到基底 (5)下表面上的各接觸墊。 然後利用金線(1 7 ),將在電氣上將已接合的I C 單元連接到金屬線路(10)(參閱圖1及3)。然後利 用環氧樹脂等逋用的密封樹脂,包封內含I C單元的凹穴 (9),金線,及鄰近1C單元的金屬線路部分,以便密 封凹穴使其不與外部環境接觸,並使I C單元不受機械性 碰觸。此一步驟包括將足置的封膠置入凹穴中,以便包封 此凹穴,再讓此封膠硬化。 此時即巳備妥構裝成品,而可將此構裝裝配到主電路 板(圖中未示出)上。可利用諸如導電性黏著劑或銲球( 即凸起銲料)(19)等習知之方式,而完成此裝配,其 中可利用習知之方式將凸起銲料置於各接觸墊(1 8 )上 ,而形成一球柵陣列(BGA)。一種將凸起銲料(1 9 )設於各接觸墊(1 8 )的逋用方法,述於一與本申請案 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) :9 - (請先閲讀背面之注意事項再填寫本頁) -裝. 訂 線 272311 A7 B7 五、發明説明(7 ) 同時提出待舂査的美國專利申腈案〇 8 / 1 2 8 4 9 2, 賅申請案係於1 9 9 3年9月2 3日提出申請,賅案之發 明人爲 Y . D e g a n i , T · D . D u d d e r a r,及 Uf. L . W ο 〇 d s , J r .,特於此處引用以供參照。 热悉本門技術者當易於了解本發明的其他優黏,並易 於對本發明作出各種修改。因此,本發明以廣義而首,並 不受限於上列所示及所述的特定細節,代表性裝置,及實 施例。因而,在不脫離下述申請専利範國及等義權項所界 定的本發明一般性観念之精神及範園下,仍可作出各種修 改。 I--------------、訂----------線, (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 -10 - 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐)
Claims (1)
- 經濟部中央標準局員工消费合作社印製 27^U A8 B8 C8 D8 六、申請專利範圍 1 . 一種生產銲墊柵陣列構裝之方法,該構裝包含: 一叠層塑膠本«,賅叠層塑膠本髄包含:一平面基底 及一平面結構構件:形成在胲結構構件中的一中央凹穴: 在賅基底上表面及下表面上的一金屬線路;在賅基底下表 面上的接觸墊柵陣列,該接觸墊柵陣列係連接到該下表面 上的一金屬線路:以及在賅基底中的若干導電通孔,用以 連接該基底兩相對表面上的賅等金雇線路,每一通孔的位 置係在錯開該等接觸墊之處; 一安裝在該凹穴內之電子裝置: 複數個自該《子裝置連接到該金屬線路的引線:以及 一在該凹穴內的密封聚合物,用以密封該氰子裝置, 胲等引線,以及胲金羼線路之內部部分: 骸方法包含下列各步驟: I ' (a )將複數個待叠合成一平面主體的共同延伸材料 片裝配成一預組合件,該預組合件包含一基底片,一接合 片,及一結構構件片, 胲基底片設有:在賅基底片上表面上的一金屬線路, 在骸基底片下表面上的接觸墊柵陣列,在該下表面上且係 連接到該等接觸墊的一金屬線路,以及將該上表面上的個 別金屬線路連接到骸下表面上的個別金屬線路之鎪穿通孔 9 該上方片及該等預浸溃樹脂織物片設有一位於中央的 開口,胲開口大的足以在裝配時霣出上表面金羼線路的內 部部分; (請先閲讀背面之注意事項再填寫本頁) 丨裝_ 訂 線. 本紙張尺度適用中國國家揉準(CNS ) A4規格(210X297公釐) -11 - 272311 A8 B8 C8 D8 經濟部中央標準局貝工消費合作社印製 六、申請專利範圍 (b )使該預組合件受到熱度及Μ力,因而形成一叠 層本髗,其中賅結構構件中及該等預浸漬樹脂織物片中之 各壁與賅基底片之上表面形成一凹穴: (c )在賅凹穴內將胲電子裝置接合到賅基底的上表 面: (d )在電氣上將胲電子裝爾連接到該金屬線路的該 內端:以及 (e )利用合成有機密封樹脂包封該凹穴。 2. 如申請專利範園第1項之方法,其中該上表面金 屬線路包括一金屬銲墊,且其中賅電子裝置係在氰氣上及 機械上黏著於該銲埜上。 3. 如申請専利範園第1項之方法,其中該基底片及 該結構構件片係爲C階段的合成有機聚合物,且該接合片 係爲B階段的合成有機聚合物。 4. 如申請專利範圍第1項之方法,其中骸合成有機 聚合物包括環氧樹脂。 5. 如申請専利範園第1項之方法,其中賅等接觸墊 設有凸起銲料,賅等凸起銲料形成球柵陣列,用以連接到 其他的氰路。 6 . —種銲墊柵陣列塑膠構裝,包含: 一具有中央凹穴的叠層塑膠本《,該本髗包含:一由 絕緣材料構成的平面基底;一由絕緣材料構成且係接合到 賅基底一個表面的平面結構構件,該結構構件設有一界定 賅凹穴的中央開口;在該基底兩相對表面上的金屬線路; (請先閲讀背面之注$項再填寫本頁) 丨裝. 訂 '線 本紙張尺度適用中國國家標準(CNS > A4規格(210X297公釐) 12 272311 Α8 Β8 C8 D8 經濟部中央標準局貝工消費合作社印裝 六、申請專利範圍 以及若干鍍穿通孔,骸等鍍穿通孔係將該基底一個表面上 的金屬線路在電無上連接到胲基底相對表面上的金觸線路 一黏著在該凹穴內的m子裝置,以及複數個將賅氪子 裝置連接到骸一個表面上的金屬線路之引線; 在骸基底的賅相對表面上之接觸墊柵陣列,賅等接觸 墊係連接到該金屬線路:以及 —在該凹穴內的封膠,用以密封該凹穴使其與環境隔 離。 7. 如申請専利範園第6項之塑膠構裝,其中該電子 裝置是一稹镫電路(1C)單元,且該1C單元可遵自 I C半導髄晶片及I C半導镰棋組。 8. 如申請專利範園第6項之塑膠構裝,其中賅絕緣 材料係爲C狀態的合成有機材料。 9 .如申腈專利範園第8項之塑膠構裝,其中係利用 B狀態的合成有機材料將該基底及該結構構件接合在一起 0 1 〇.如申請專利範圍第9項之塑膠構裝,其中該有 機材料包括環氧樹脂。 11.如申請專利範園第6項之塑膠構裝,其中該等 接觸墊設有凸起銲料,該等凸起銲料形成球柵陣列,用以 連接到其他的電路。 1 2 .—種生產塑膠叠片的方法,用以製造銲墊柵陣 列塑膠構裝,該方法包含下列各步驟: 本紙張尺度逋用中國國家標準(CNS )八4規格(210X297公ίΊ - 13 - I-------1 I 裝-- (請先閲讀背面之注意事項再填寫本頁) 訂 272311 經濟部中央標準局員工消费合作社印製 A8 B8 C8 D8 々、申請專利範圍 (a )將複數個待叠合成一平面主《的共同延伸材料 片裝配成一預組合件,賅預組合件包含一基底片,一接合 片,及一結構構件片, 該基底片設有:在該基底片上表面上的一金靥線路, 在該基底片下表面上的接觸墊柵陣列,在該下表面上且係 連接到賅等接觸埜的一金屬線路,以及將該上表面上的個 別金屬線路連接到胲下表面上的個別金屬線路之鍍穿通孔 ) 賅上方片及該等預浸溃樹脂織物片設有一位於中央的 開口,骸開口大的足以在裝配時霣出上表面金颺線路的內 部部分:以及 (b )使該預組合件受到熱度及應力,因而形成一叠 屠本體,其中該結構構件中及胲等預浸溃樹脂織物片中之 各臂與骸基底片之上表面形成一凹穴。 1 3.如申請専利範園第1 2項之方法,其中該上表 面金屬線路包括一金屬銲墊,且其中該電子裝置係在電氣 上及機械上黏著於賅銲墊上。 1 4.如申請專利範圈第1 2項之方法,其中骸基底 片及賅結構構件片係爲C階段的合成有機聚合物,且該接 合片係爲B階段的合成有機聚合物。 1 5.如申腈専利範園第1 4項之方法,其中該合成 有機聚合物包括環氣樹脂。 1 6 . —種用於製造銲墊柵陣列塑膠構裝之塑膠疊片 ,該塑膠構裝包含一 I C半導髗單元,胲塑膠叠片包含: 本紙張尺度適用中國國家標準(CNS ) A4规格(210X297公釐) - —--------i I裝-- (請先閱讀背面之注意事項再填寫本頁) 、?τ 272311 經濟部中央標率局員工消費合作社印製 A8 B8 C8 D8 六、申請專利範圍 —由絕緣材料構成的平面基底,胲平面基底設有:在 胲兩相對平表面上的金属嫌路,將該基底一個表面上的金 屬線路連接到該基底相對表面上的金屬線路之若干鍍穿通 孔,以及在骸相對表面上且係在電氣上連接到該相對表面 上一金屬線路之銲墊柵陣列:以及 一由絕緣材料構成的結構構件,賅結構構件係在胲基 底的該一個表面之上,該結梅構件具有一位於中央的開口 ,賅開口形成一凹穴,以便將一m子裝置黏著於該凹穴中 ,胲開口中具有胲金屬線路的露出部分,以便於將來在電 氣上將胲電子裝s連接到胲金雇線路,胲結構權件使胲ft 片具有强度及剛度,且胲結構構件的厚度足以利用封膠保 謨該I c單元及連接引線,其中該封膠係沈稹於該凹穴內 〇 1 7.如申請專利範圍第1 6項之塑膠叠片,其中該 電子裝置是一稹髏電路(I C)單元,且骸I C單元可選 自I C半導體晶片及I C半導體棋組。 1 8.如申請專利範園第1 7項之塑膠叠片,其中該 絕緣材料係爲C階段的合成有機材料。 1 9.如申請專利範園第1 8項之塑膠叠片,其中係 利用B狀態的合成有機材料將賅基底及賅結構構件接合在 —起0 2 〇 ·如申請專利範圔第1 9項之塑膠叠片,其中該 有機材料包括環氧樹脂。 2 1 .如申請專利範園第2 0項之塑膠叠片,其中該 本紙張尺度適用中國國家標準(CNS > A4規格(210X297公釐) -15 · I--------5 _裝-- (請先閱讀背面之注意事項再填寫本頁) 訂 ABCD 經濟部中央標準局員工消費合作社印製 272311 六、申請專利範圍 等接觸墊設有凸起銲料,該等凸起銲料形成球柵陣列,用 以連接到其他的電路。 I^-------—裝 11 (請先閱讀背面之注意事項再填寫本頁) 、1T -16 - 本紙張尺度逋用中國國家標準(CNS ) Α4規格(210Χ297公釐)
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KR20090061996A (ko) * | 2007-12-12 | 2009-06-17 | 삼성전자주식회사 | 칩 뒷면 보호 필름, 그 제조 방법 및 이를 이용한 반도체패키지의 제조 방법 |
KR100982795B1 (ko) | 2008-07-10 | 2010-09-16 | 삼성전기주식회사 | 전자소자 내장형 인쇄회로기판 제조방법 |
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US10269688B2 (en) | 2013-03-14 | 2019-04-23 | General Electric Company | Power overlay structure and method of making same |
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JPS51130866A (en) * | 1975-05-08 | 1976-11-13 | Seiko Instr & Electronics | Method of mounting electronic timekeeper circuits |
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FR2439478A1 (fr) * | 1978-10-19 | 1980-05-16 | Cii Honeywell Bull | Boitier plat pour dispositifs a circuits integres |
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JPS59138339A (ja) * | 1983-01-28 | 1984-08-08 | Toshiba Corp | 半導体装置 |
US4819041A (en) * | 1983-12-30 | 1989-04-04 | Amp Incorporated | Surface mounted integrated circuit chip package and method for making same |
US4916522A (en) * | 1988-04-21 | 1990-04-10 | American Telephone And Telegraph Company , At & T Bell Laboratories | Integrated circuit package using plastic encapsulant |
US5258647A (en) * | 1989-07-03 | 1993-11-02 | General Electric Company | Electronic systems disposed in a high force environment |
FR2651923B1 (fr) * | 1989-09-14 | 1994-06-17 | Peugeot | Circuit integre de puissance. |
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US5102829A (en) * | 1991-07-22 | 1992-04-07 | At&T Bell Laboratories | Plastic pin grid array package |
JPH05109922A (ja) * | 1991-10-21 | 1993-04-30 | Nec Corp | 半導体装置 |
US5285352A (en) * | 1992-07-15 | 1994-02-08 | Motorola, Inc. | Pad array semiconductor device with thermal conductor and process for making the same |
US5371404A (en) * | 1993-02-04 | 1994-12-06 | Motorola, Inc. | Thermally conductive integrated circuit package with radio frequency shielding |
US5420460A (en) * | 1993-08-05 | 1995-05-30 | Vlsi Technology, Inc. | Thin cavity down ball grid array package based on wirebond technology |
US5455456A (en) * | 1993-09-15 | 1995-10-03 | Lsi Logic Corporation | Integrated circuit package lid |
-
1994
- 1994-10-11 TW TW083109384A patent/TW272311B/zh not_active IP Right Cessation
- 1994-10-25 CA CA002134257A patent/CA2134257C/en not_active Expired - Fee Related
- 1994-12-14 EP EP94309354A patent/EP0664562A1/en not_active Ceased
- 1994-12-14 SG SG1996000881A patent/SG52230A1/en unknown
-
1995
- 1995-01-11 JP JP7018329A patent/JP2981141B2/ja not_active Expired - Fee Related
- 1995-01-11 KR KR1019950000383A patent/KR950034711A/ko not_active Application Discontinuation
-
1996
- 1996-05-30 US US08/655,509 patent/US5926696A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR950034711A (ko) | 1995-12-28 |
SG52230A1 (en) | 1998-09-28 |
JP2981141B2 (ja) | 1999-11-22 |
JPH07212002A (ja) | 1995-08-11 |
CA2134257C (en) | 1998-12-15 |
EP0664562A1 (en) | 1995-07-26 |
US5926696A (en) | 1999-07-20 |
CA2134257A1 (en) | 1995-07-13 |
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