TW250603B - - Google Patents
Info
- Publication number
- TW250603B TW250603B TW081102803A TW81102803A TW250603B TW 250603 B TW250603 B TW 250603B TW 081102803 A TW081102803 A TW 081102803A TW 81102803 A TW81102803 A TW 81102803A TW 250603 B TW250603 B TW 250603B
- Authority
- TW
- Taiwan
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
- G05F3/247—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
- G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Electromagnetism (AREA)
- Nonlinear Science (AREA)
- Automation & Control Theory (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Control Of Electrical Variables (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019920004474A KR950010284B1 (ko) | 1992-03-18 | 1992-03-18 | 기준전압 발생회로 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW250603B true TW250603B (sl) | 1995-07-01 |
Family
ID=19330566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW081102803A TW250603B (sl) | 1992-03-18 | 1992-04-10 |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPH0643953A (sl) |
| KR (1) | KR950010284B1 (sl) |
| DE (1) | DE4214106A1 (sl) |
| FR (1) | FR2688904B1 (sl) |
| GB (1) | GB2265478B (sl) |
| IT (1) | IT1254948B (sl) |
| TW (1) | TW250603B (sl) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI472012B (zh) * | 2005-01-19 | 2015-02-01 | Samsung Display Co Ltd | 感測器，薄膜電晶體陣列面板，及包含感測器之顯示面板 |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB9423034D0 (en) * | 1994-11-15 | 1995-01-04 | Sgs Thomson Microelectronics | A reference circuit |
| DE69521287T2 (de) * | 1995-03-24 | 2002-05-02 | Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania | Schaltungsanordnung zur Erzeugung einer Referenzspannung und Detektion eines Versorgungsspannungsabfalls und zugehöriges Verfahren |
| KR100496792B1 (ko) * | 1997-09-04 | 2005-09-08 | 삼성전자주식회사 | 기준전압발생회로 |
| US6242972B1 (en) * | 1999-10-27 | 2001-06-05 | Silicon Storage Technology, Inc. | Clamp circuit using PMOS-transistors with a weak temperature dependency |
| JP5482126B2 (ja) * | 2009-11-13 | 2014-04-23 | ミツミ電機株式会社 | 参照電圧発生回路および受信回路 |
| CN107015594A (zh) * | 2017-05-30 | 2017-08-04 | 长沙方星腾电子科技有限公司 | 一种偏置电流产生电路 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56121114A (en) * | 1980-02-28 | 1981-09-22 | Seiko Instr & Electronics Ltd | Constant-current circuit |
| US4464588A (en) * | 1982-04-01 | 1984-08-07 | National Semiconductor Corporation | Temperature stable CMOS voltage reference |
| US4446383A (en) * | 1982-10-29 | 1984-05-01 | International Business Machines | Reference voltage generating circuit |
| US4847518A (en) * | 1987-11-13 | 1989-07-11 | Harris Semiconductor Patents, Inc. | CMOS voltage divider circuits |
| GB2214333B (en) * | 1988-01-13 | 1992-01-29 | Motorola Inc | Voltage sources |
| JP2674669B2 (ja) * | 1989-08-23 | 1997-11-12 | 株式会社東芝 | 半導体集積回路 |
| KR920004587B1 (ko) * | 1989-10-24 | 1992-06-11 | 삼성전자 주식회사 | 메모리장치의 기준전압 안정화회로 |
-
1992
- 1992-03-18 KR KR1019920004474A patent/KR950010284B1/ko not_active IP Right Cessation
- 1992-04-10 TW TW081102803A patent/TW250603B/zh active
- 1992-04-29 FR FR9205286A patent/FR2688904B1/fr not_active Expired - Fee Related
- 1992-04-29 GB GB9209196A patent/GB2265478B/en not_active Expired - Fee Related
- 1992-04-29 DE DE4214106A patent/DE4214106A1/de not_active Withdrawn
- 1992-04-29 IT ITMI921017A patent/IT1254948B/it active IP Right Grant
- 1992-05-15 JP JP4123538A patent/JPH0643953A/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI472012B (zh) * | 2005-01-19 | 2015-02-01 | Samsung Display Co Ltd | 感測器，薄膜電晶體陣列面板，及包含感測器之顯示面板 |
Also Published As
| Publication number | Publication date |
|---|---|
| IT1254948B (it) | 1995-10-11 |
| ITMI921017A1 (it) | 1993-10-29 |
| DE4214106A1 (de) | 1993-09-23 |
| JPH0643953A (ja) | 1994-02-18 |
| GB2265478A (en) | 1993-09-29 |
| KR930020658A (ko) | 1993-10-20 |
| FR2688904B1 (fr) | 1994-06-03 |
| ITMI921017A0 (it) | 1992-04-29 |
| FR2688904A1 (fr) | 1993-09-24 |
| GB2265478B (en) | 1996-01-03 |
| KR950010284B1 (ko) | 1995-09-12 |
| GB9209196D0 (en) | 1992-06-17 |