TW250591B - - Google Patents
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- Publication number
- TW250591B TW250591B TW083106789A TW83106789A TW250591B TW 250591 B TW250591 B TW 250591B TW 083106789 A TW083106789 A TW 083106789A TW 83106789 A TW83106789 A TW 83106789A TW 250591 B TW250591 B TW 250591B
- Authority
- TW
- Taiwan
- Prior art keywords
- channel
- item
- electrode
- gate electrode
- gate
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/18—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
- H03B5/1841—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/0123—Frequency selective two-port networks comprising distributed impedance elements together with lumped impedance elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/20—Inductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
- H03H2001/0021—Constructional details
- H03H2001/0064—Constructional details comprising semiconductor material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
- H03H2001/0021—Constructional details
- H03H2001/0071—Constructional details comprising zig-zag inductor
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
- H03H2001/0021—Constructional details
- H03H2001/0078—Constructional details comprising spiral inductor on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Coils Or Transformers For Communication (AREA)
- Filters And Equalizers (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20362393 | 1993-07-26 | ||
| JP29428293 | 1993-10-29 | ||
| JP34147693A JP3597879B2 (ja) | 1993-10-29 | 1993-12-10 | Lc素子,半導体装置 |
| JP13363994A JP3474636B2 (ja) | 1993-07-26 | 1994-05-24 | Lc素子,半導体装置及びlc素子の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW250591B true TW250591B (enExample) | 1995-07-01 |
Family
ID=27471773
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW083106789A TW250591B (enExample) | 1993-07-26 | 1994-07-25 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US5500552A (enExample) |
| EP (1) | EP0637842B1 (enExample) |
| KR (1) | KR100299714B1 (enExample) |
| CN (1) | CN1110096C (enExample) |
| DE (1) | DE69430091T2 (enExample) |
| FI (1) | FI114054B (enExample) |
| TW (1) | TW250591B (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2301706A (en) * | 1995-06-01 | 1996-12-11 | Plessey Semiconductors Ltd | Intergrated inductor arrangement |
| US5831331A (en) * | 1996-11-22 | 1998-11-03 | Philips Electronics North America Corporation | Self-shielding inductor for multi-layer semiconductor integrated circuits |
| US6885275B1 (en) * | 1998-11-12 | 2005-04-26 | Broadcom Corporation | Multi-track integrated spiral inductor |
| GB2353139B (en) * | 1999-08-12 | 2001-08-29 | United Microelectronics Corp | Inductor and method of manufacturing the same |
| DE10232642B4 (de) * | 2002-07-18 | 2006-11-23 | Infineon Technologies Ag | Integrierte Transformatoranordnung |
| US7230316B2 (en) * | 2002-12-27 | 2007-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having transferred integrated circuit |
| JP2004228188A (ja) * | 2003-01-21 | 2004-08-12 | Renesas Technology Corp | 半導体装置 |
| US7425485B2 (en) * | 2005-09-30 | 2008-09-16 | Freescale Semiconductor, Inc. | Method for forming microelectronic assembly |
| US20080251275A1 (en) * | 2007-04-12 | 2008-10-16 | Ralph Morrison | Decoupling Transmission Line |
| US8212155B1 (en) * | 2007-06-26 | 2012-07-03 | Wright Peter V | Integrated passive device |
| KR20090061974A (ko) * | 2007-12-12 | 2009-06-17 | 한국전자통신연구원 | 동작 주파수가 가변되는 자기장 강화 장치 |
| JP2010080926A (ja) * | 2008-08-29 | 2010-04-08 | Toshiba Lighting & Technology Corp | Led点灯装置および照明器具 |
| KR102072803B1 (ko) * | 2013-04-12 | 2020-02-04 | 삼성디스플레이 주식회사 | 박막 반도체 장치 및 유기 발광 표시 장치 |
| US9461222B1 (en) * | 2015-06-30 | 2016-10-04 | Epistar Corporation | Light-emitting element and the light-emitting module thereof |
| US11164694B2 (en) * | 2019-09-27 | 2021-11-02 | Apple Inc. | Low-spurious electric-field inductor design |
| US11735519B2 (en) * | 2021-06-24 | 2023-08-22 | Xilinx, Inc. | In-package passive inductive element for reflection mitigation |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3504430A (en) * | 1966-06-27 | 1970-04-07 | Hitachi Ltd | Method of making semiconductor devices having insulating films |
| GB2103012A (en) * | 1981-07-03 | 1983-02-09 | Clarion Co Ltd | Variable capacitor |
| JPS594144A (ja) * | 1982-06-30 | 1984-01-10 | Fujitsu Ltd | 半導体装置 |
| US4619001A (en) * | 1983-08-02 | 1986-10-21 | Matsushita Electric Industrial Co., Ltd. | Tuning systems on dielectric substrates |
| US4737830A (en) * | 1986-01-08 | 1988-04-12 | Advanced Micro Devices, Inc. | Integrated circuit structure having compensating means for self-inductance effects |
| US4720467A (en) * | 1986-09-29 | 1988-01-19 | International Business Machines Corporation | Method of forming a capacitor-transistor integrated circuit |
| US4819047A (en) * | 1987-05-15 | 1989-04-04 | Advanced Micro Devices, Inc. | Protection system for CMOS integrated circuits |
| JP2732089B2 (ja) * | 1988-10-14 | 1998-03-25 | ローム株式会社 | 集積回路のコンデンサ形成方法 |
| US5136357A (en) * | 1989-06-26 | 1992-08-04 | Micron Technology, Inc. | Low-noise, area-efficient, high-frequency clock signal distribution line structure |
| JP3280019B2 (ja) * | 1989-10-26 | 2002-04-30 | 新潟精密株式会社 | Lcノイズフィルタ |
| JPH03190302A (ja) * | 1989-12-19 | 1991-08-20 | Mitsubishi Electric Corp | 電界効果トランジスタを使用した共振回路 |
| US5227659A (en) * | 1990-06-08 | 1993-07-13 | Trustees Of Boston University | Integrated circuit inductor |
| JPH04326607A (ja) * | 1991-04-26 | 1992-11-16 | Sumitomo Electric Ind Ltd | 発振回路 |
| JP3045573B2 (ja) * | 1991-08-19 | 2000-05-29 | 北川工業株式会社 | 電子部品、コンデンサおよび3端子ノイズフィルタの製造方法 |
| US5431987A (en) * | 1992-11-04 | 1995-07-11 | Susumu Okamura | Noise filter |
| US5370766A (en) * | 1993-08-16 | 1994-12-06 | California Micro Devices | Methods for fabrication of thin film inductors, inductor networks and integration with other passive and active devices |
-
1994
- 1994-07-22 US US08/282,046 patent/US5500552A/en not_active Expired - Lifetime
- 1994-07-25 TW TW083106789A patent/TW250591B/zh active
- 1994-07-25 CN CN94114815A patent/CN1110096C/zh not_active Expired - Fee Related
- 1994-07-25 KR KR1019940017946A patent/KR100299714B1/ko not_active Expired - Fee Related
- 1994-07-26 FI FI943504A patent/FI114054B/fi not_active IP Right Cessation
- 1994-07-26 DE DE69430091T patent/DE69430091T2/de not_active Expired - Fee Related
- 1994-07-26 EP EP94111622A patent/EP0637842B1/en not_active Expired - Lifetime
-
1995
- 1995-06-07 US US08/476,276 patent/US5846845A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP0637842A1 (en) | 1995-02-08 |
| FI943504A7 (fi) | 1995-01-27 |
| KR100299714B1 (ko) | 2001-10-22 |
| FI114054B (fi) | 2004-07-30 |
| DE69430091T2 (de) | 2002-10-31 |
| US5500552A (en) | 1996-03-19 |
| EP0637842B1 (en) | 2002-03-13 |
| US5846845A (en) | 1998-12-08 |
| FI943504A0 (fi) | 1994-07-26 |
| CN1110028A (zh) | 1995-10-11 |
| KR950004609A (ko) | 1995-02-18 |
| DE69430091D1 (de) | 2002-04-18 |
| CN1110096C (zh) | 2003-05-28 |
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