TW218424B - - Google Patents

Info

Publication number
TW218424B
TW218424B TW081104291A TW81104291A TW218424B TW 218424 B TW218424 B TW 218424B TW 081104291 A TW081104291 A TW 081104291A TW 81104291 A TW81104291 A TW 81104291A TW 218424 B TW218424 B TW 218424B
Authority
TW
Taiwan
Application number
TW081104291A
Other languages
Chinese (zh)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of TW218424B publication Critical patent/TW218424B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0281—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/114—PN junction isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0128—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
TW081104291A 1992-05-21 1992-05-30 TW218424B (en, 2012)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP92201456 1992-05-21

Publications (1)

Publication Number Publication Date
TW218424B true TW218424B (en, 2012) 1994-01-01

Family

ID=8210621

Family Applications (1)

Application Number Title Priority Date Filing Date
TW081104291A TW218424B (en, 2012) 1992-05-21 1992-05-30

Country Status (6)

Country Link
US (1) US5347155A (en, 2012)
JP (1) JPH06204482A (en, 2012)
KR (1) KR100298106B1 (en, 2012)
CN (1) CN1034453C (en, 2012)
CA (1) CA2096479A1 (en, 2012)
TW (1) TW218424B (en, 2012)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE1007657A3 (nl) * 1993-10-14 1995-09-05 Philips Electronics Nv Halfgeleiderinrichting met een snelle laterale dmost voorzien van een hoogspanningsaanvoerelektrode.
JP3581447B2 (ja) * 1995-08-22 2004-10-27 三菱電機株式会社 高耐圧半導体装置
US6831331B2 (en) 1995-11-15 2004-12-14 Denso Corporation Power MOS transistor for absorbing surge current
US6242787B1 (en) 1995-11-15 2001-06-05 Denso Corporation Semiconductor device and manufacturing method thereof
KR100204805B1 (ko) * 1996-12-28 1999-06-15 윤종용 디엠오에스 트랜지스터 제조방법
WO1999023703A1 (de) * 1997-11-03 1999-05-14 Infineon Technologies Ag Hochspannungsfeste randstruktur für halbleiterbauelemente
US5855410A (en) * 1998-05-29 1999-01-05 Giant Manufacturing Co., Ltd. Angular position transforming device for a bicycle saddle
DE19838108B4 (de) * 1998-08-21 2005-05-25 Infineon Technologies Ag Randstruktur für Hochvolt-Halbleiterbauelemente
FR2785090B1 (fr) * 1998-10-23 2001-01-19 St Microelectronics Sa Composant de puissance portant des interconnexions
GB0210065D0 (en) * 2002-05-02 2002-06-12 Koninkl Philips Electronics Nv Electronic devices comprising bottom gate tft's and their manufacture
US6882023B2 (en) * 2002-10-31 2005-04-19 Motorola, Inc. Floating resurf LDMOSFET and method of manufacturing same
ATE556487T1 (de) * 2003-10-23 2012-05-15 Nxp Bv Schalter
US6873011B1 (en) * 2004-02-24 2005-03-29 System General Corp. High voltage and low on-resistance LDMOS transistor having equalized capacitance
US6995428B2 (en) * 2004-02-24 2006-02-07 System General Corp. High voltage LDMOS transistor having an isolated structure
DE102004038369B4 (de) 2004-08-06 2018-04-05 Austriamicrosystems Ag Hochvolt-NMOS-Transistor und Herstellungsverfahren
KR100722909B1 (ko) * 2005-08-30 2007-05-30 닛산 지도우샤 가부시키가이샤 반도체 장치
JP4979212B2 (ja) * 2005-08-31 2012-07-18 オンセミコンダクター・トレーディング・リミテッド 半導体装置及びその製造方法
JP4630207B2 (ja) * 2006-03-15 2011-02-09 シャープ株式会社 半導体装置
DE102007020659B4 (de) * 2007-04-30 2012-02-23 Infineon Technologies Austria Ag Halbleiterbauelement und Verfahren zur Herstellung desselben
KR100840667B1 (ko) * 2007-06-26 2008-06-24 주식회사 동부하이텍 수평형 디모스 소자 및 그 제조방법
US8174051B2 (en) * 2007-06-26 2012-05-08 International Rectifier Corporation III-nitride power device
CN101442073B (zh) * 2007-11-23 2011-02-09 三洋电机株式会社 半导体器件及其制造方法
US8558307B2 (en) 2007-12-18 2013-10-15 Sanyo Semiconductor Co., Ltd. Semiconductor device with diffused MOS transistor and manufacturing method of the same
US8264038B2 (en) * 2008-08-07 2012-09-11 Texas Instruments Incorporated Buried floating layer structure for improved breakdown
JP2010118419A (ja) * 2008-11-12 2010-05-27 Sharp Corp 半導体装置
CN102157560B (zh) * 2011-03-02 2012-09-12 电子科技大学 一种高压ldmos器件
CN104221151B (zh) * 2012-03-16 2017-02-22 三菱电机株式会社 半导体装置及其制造方法
JP6028402B2 (ja) 2012-06-07 2016-11-16 富士電機株式会社 半導体装置およびその製造方法
CN103681809B (zh) * 2012-09-09 2016-08-17 苏州英能电子科技有限公司 具有复合结构的横向双极型晶体管
JP2014241367A (ja) * 2013-06-12 2014-12-25 三菱電機株式会社 半導体素子、半導体素子の製造方法
CN105826371B (zh) * 2015-01-05 2018-11-27 无锡华润上华科技有限公司 高压p型横向双扩散金属氧化物半导体场效应管
JP6858091B2 (ja) * 2017-07-18 2021-04-14 株式会社 日立パワーデバイス 半導体装置およびその製造方法
CN112420846B (zh) * 2020-12-04 2023-03-14 重庆邮电大学 一种具有表面和体内双沟道的横向超结薄层soi-ldmos器件

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4300150A (en) * 1980-06-16 1981-11-10 North American Philips Corporation Lateral double-diffused MOS transistor device
NL187415C (nl) * 1980-09-08 1991-09-16 Philips Nv Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte.
GB2173037A (en) * 1985-03-29 1986-10-01 Philips Electronic Associated Semiconductor devices employing conductivity modulation
JPS62122272A (ja) * 1985-11-22 1987-06-03 Toshiba Corp 半導体装置
US5034790A (en) * 1989-05-23 1991-07-23 U.S. Philips Corp. MOS transistor with semi-insulating field plate and surface-adjoining top layer

Also Published As

Publication number Publication date
US5347155A (en) 1994-09-13
JPH06204482A (ja) 1994-07-22
CN1085690A (zh) 1994-04-20
CN1034453C (zh) 1997-04-02
CA2096479A1 (en) 1993-11-22
KR930024191A (ko) 1993-12-22
KR100298106B1 (ko) 2001-10-24

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