TW202510081A - 半導體裝置之製造方法 - Google Patents

半導體裝置之製造方法 Download PDF

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Publication number
TW202510081A
TW202510081A TW113113324A TW113113324A TW202510081A TW 202510081 A TW202510081 A TW 202510081A TW 113113324 A TW113113324 A TW 113113324A TW 113113324 A TW113113324 A TW 113113324A TW 202510081 A TW202510081 A TW 202510081A
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TW
Taiwan
Prior art keywords
insulating film
plasma
semiconductor substrate
electrode
organic insulating
Prior art date
Application number
TW113113324A
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English (en)
Chinese (zh)
Inventor
丸山佳希
奧田唯史
福住志津
Original Assignee
日商力森諾科股份有限公司
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Application filed by 日商力森諾科股份有限公司 filed Critical 日商力森諾科股份有限公司
Publication of TW202510081A publication Critical patent/TW202510081A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H10P10/128—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates by direct semiconductor to semiconductor bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/08—Planarisation of organic insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01351—Changing the shapes of die-attach connectors
    • H10W72/01353—Changing the shapes of die-attach connectors by etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01351—Changing the shapes of die-attach connectors
    • H10W72/01359—Changing the shapes of die-attach connectors by planarisation, e.g. chemical-mechanical polishing [CMP]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07311—Treating the bonding area before connecting, e.g. by applying flux or cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
TW113113324A 2023-04-12 2024-04-10 半導體裝置之製造方法 TW202510081A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/JP2023/014899 WO2024214219A1 (ja) 2023-04-12 2023-04-12 半導体装置の製造方法
WOPCT/JP2023/014899 2023-04-12

Publications (1)

Publication Number Publication Date
TW202510081A true TW202510081A (zh) 2025-03-01

Family

ID=93058878

Family Applications (1)

Application Number Title Priority Date Filing Date
TW113113324A TW202510081A (zh) 2023-04-12 2024-04-10 半導體裝置之製造方法

Country Status (6)

Country Link
US (1) US20260082837A1 (https=)
JP (1) JPWO2024214219A1 (https=)
KR (1) KR20250173514A (https=)
CN (1) CN119137712A (https=)
TW (1) TW202510081A (https=)
WO (1) WO2024214219A1 (https=)

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3472196B2 (ja) * 1999-06-01 2003-12-02 キヤノン株式会社 エッチング方法及びそれを用いた半導体装置の製造方法
JP4115761B2 (ja) * 2002-07-05 2008-07-09 アルプス電気株式会社 アクティブマトリクス基板及びその製造方法並びにそれを用いた表示装置
JP4606824B2 (ja) * 2004-09-14 2011-01-05 共同印刷株式会社 有機ｅｌディスプレイの製造方法
JP4450715B2 (ja) * 2004-10-08 2010-04-14 三菱電機株式会社 アクティブマトリクス型表示装置およびアクティブマトリクス型表示装置の製造方法
JP2009015199A (ja) * 2007-07-09 2009-01-22 Nec Lcd Technologies Ltd 液晶表示装置およびその製造方法
JP2010230978A (ja) * 2009-03-27 2010-10-14 Fujitsu Ltd 光半導体装置及びその製造方法
US9953941B2 (en) 2015-08-25 2018-04-24 Invensas Bonding Technologies, Inc. Conductive barrier direct hybrid bonding
JP7501133B2 (ja) 2020-06-12 2024-06-18 株式会社レゾナック 半導体装置の製造方法
JP7543712B2 (ja) * 2020-06-12 2024-09-03 株式会社レゾナック 半導体装置の製造方法
WO2022201531A1 (ja) * 2021-03-26 2022-09-29 昭和電工マテリアルズ株式会社 半導体装置の製造方法、洗浄装置、洗浄方法、及び、半導体装置
WO2022201497A1 (ja) * 2021-03-26 2022-09-29 昭和電工マテリアルズ株式会社 半導体装置の製造方法、半導体装置、集積回路要素、及び、集積回路要素の製造方法

Also Published As

Publication number Publication date
WO2024214219A1 (ja) 2024-10-17
KR20250173514A (ko) 2025-12-10
CN119137712A (zh) 2024-12-13
JPWO2024214219A1 (https=) 2024-10-17
US20260082837A1 (en) 2026-03-19

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