KR20250173514A - 반도체 장치의 제조 방법 - Google Patents

반도체 장치의 제조 방법

Info

Publication number
KR20250173514A
KR20250173514A KR1020257035541A KR20257035541A KR20250173514A KR 20250173514 A KR20250173514 A KR 20250173514A KR 1020257035541 A KR1020257035541 A KR 1020257035541A KR 20257035541 A KR20257035541 A KR 20257035541A KR 20250173514 A KR20250173514 A KR 20250173514A
Authority
KR
South Korea
Prior art keywords
insulating film
plasma
semiconductor substrate
electrode
organic insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257035541A
Other languages
English (en)
Korean (ko)
Inventor
요시키 마루야마
다다시 오쿠다
시즈 후쿠즈미
Original Assignee
가부시끼가이샤 레조낙
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시끼가이샤 레조낙 filed Critical 가부시끼가이샤 레조낙
Publication of KR20250173514A publication Critical patent/KR20250173514A/ko
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H01L24/83—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H01L21/31138—
    • H01L24/27—
    • H01L24/28—
    • H01L24/31—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H10P10/128—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates by direct semiconductor to semiconductor bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/08—Planarisation of organic insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01351—Changing the shapes of die-attach connectors
    • H10W72/01353—Changing the shapes of die-attach connectors by etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01351—Changing the shapes of die-attach connectors
    • H10W72/01359—Changing the shapes of die-attach connectors by planarisation, e.g. chemical-mechanical polishing [CMP]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07311—Treating the bonding area before connecting, e.g. by applying flux or cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H01L2224/2761—
    • H01L2224/27845—
    • H01L2224/83011—
    • H01L2224/83013—
    • H01L2224/83911—

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
KR1020257035541A 2023-04-12 2023-04-12 반도체 장치의 제조 방법 Pending KR20250173514A (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2023/014899 WO2024214219A1 (ja) 2023-04-12 2023-04-12 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
KR20250173514A true KR20250173514A (ko) 2025-12-10

Family

ID=93058878

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257035541A Pending KR20250173514A (ko) 2023-04-12 2023-04-12 반도체 장치의 제조 방법

Country Status (6)

Country Link
US (1) US20260082837A1 (https=)
JP (1) JPWO2024214219A1 (https=)
KR (1) KR20250173514A (https=)
CN (1) CN119137712A (https=)
TW (1) TW202510081A (https=)
WO (1) WO2024214219A1 (https=)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018528622A (ja) 2015-08-25 2018-09-27 インヴェンサス ボンディング テクノロジーズ インコーポレイテッド 導電性バリアのダイレクトハイブリッドボンディング
JP2021197430A (ja) 2020-06-12 2021-12-27 昭和電工マテリアルズ株式会社 半導体装置の製造方法
JP2021197431A (ja) 2020-06-12 2021-12-27 昭和電工マテリアルズ株式会社 半導体装置の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3472196B2 (ja) * 1999-06-01 2003-12-02 キヤノン株式会社 エッチング方法及びそれを用いた半導体装置の製造方法
JP4115761B2 (ja) * 2002-07-05 2008-07-09 アルプス電気株式会社 アクティブマトリクス基板及びその製造方法並びにそれを用いた表示装置
JP4606824B2 (ja) * 2004-09-14 2011-01-05 共同印刷株式会社 有機ｅｌディスプレイの製造方法
JP4450715B2 (ja) * 2004-10-08 2010-04-14 三菱電機株式会社 アクティブマトリクス型表示装置およびアクティブマトリクス型表示装置の製造方法
JP2009015199A (ja) * 2007-07-09 2009-01-22 Nec Lcd Technologies Ltd 液晶表示装置およびその製造方法
JP2010230978A (ja) * 2009-03-27 2010-10-14 Fujitsu Ltd 光半導体装置及びその製造方法
WO2022201531A1 (ja) * 2021-03-26 2022-09-29 昭和電工マテリアルズ株式会社 半導体装置の製造方法、洗浄装置、洗浄方法、及び、半導体装置
WO2022201497A1 (ja) * 2021-03-26 2022-09-29 昭和電工マテリアルズ株式会社 半導体装置の製造方法、半導体装置、集積回路要素、及び、集積回路要素の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018528622A (ja) 2015-08-25 2018-09-27 インヴェンサス ボンディング テクノロジーズ インコーポレイテッド 導電性バリアのダイレクトハイブリッドボンディング
JP2021197430A (ja) 2020-06-12 2021-12-27 昭和電工マテリアルズ株式会社 半導体装置の製造方法
JP2021197431A (ja) 2020-06-12 2021-12-27 昭和電工マテリアルズ株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
WO2024214219A1 (ja) 2024-10-17
CN119137712A (zh) 2024-12-13
TW202510081A (zh) 2025-03-01
JPWO2024214219A1 (https=) 2024-10-17
US20260082837A1 (en) 2026-03-19

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Q12 Application published

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