TW202247438A - Optical sensing device and electronic apparatus having the same - Google Patents

Abstract

An optical sensing device includes a substrate, a sensing element layer, a light-shielding layer and a light absorbing layer. The substrate has a first surface and a second surface opposite to the first surface. The sensing element layer is disposed on the first surface and includes a plurality of sensing elements. The light-shielding layer is disposed on the sensing element layer and has a plurality of openings, wherein an orthogonal projection of the opening on the substrate is overlapped with an orthogonal projection of the sensing element on the substrate. The light absorbing layer is disposed on the second surface. An electronic apparatus including the optical sensing device described above is also provided.

Description

Optical sensing device and electronic device including same

The present invention relates to a sensing device and an electronic device including it, and in particular to an optical sensing device and an electronic device including it.

In order to provide the information needed to build a smart living environment, various sensors have been widely used in daily life, for example, various optical sensors for sensing biometric features such as fingerprints and vein images. However, the test results show that when the sensor is pressed with a finger under strong light (such as about 100K lux sunlight), black shadows or blurred images often appear. It is analyzed that one of the possible reasons is that after light penetrates the sensor, it is reflected by the underlying components (such as components with reflective surfaces), resulting in increased sensing noise. In addition, the second possible reason is that the optical sensor needs to be equipped with a light collimation structure to improve the sensing resolution, and the stray light generated by the reflection of the light collimation structure after the irradiated light enters the sensor will also cause the sensor’s Sensing noise increases, resulting in a decrease in the sensing resolution of the sensor.

The invention provides an optical sensing device with improved sensing resolution.

An embodiment of the present invention proposes an optical sensing device, comprising: a substrate having opposite first and second surfaces; a sensing element layer located on the first surface and comprising a plurality of sensing elements; a first light-shielding The layer is located on the sensing element layer and has a plurality of first openings, wherein the orthographic projection of the first opening on the substrate overlaps the orthographic projection of the sensing element on the substrate; and the first light absorbing layer is located on the second surface.

In an embodiment of the present invention, the above optical sensing device has a sensing area and a non-sensing area, the non-sensing area surrounds the sensing area, and a plurality of sensing elements are located in the sensing area.

In an embodiment of the present invention, the above-mentioned orthographic projection of the first light absorbing layer on the substrate overlaps the orthographic projection of the sensing region on the substrate.

In an embodiment of the present invention, the above-mentioned orthographic projection of the first light absorbing layer on the substrate overlaps the orthographic projection of the non-sensing region on the substrate.

In an embodiment of the present invention, the above-mentioned orthographic projection of the first light absorbing layer on the substrate overlaps the orthographic projection of the sensing region and the non-sensing region on the substrate.

In an embodiment of the present invention, the above-mentioned optical sensing device further includes a cover plate opposite to the substrate, and the sensing element layer and the first light-shielding layer are located between the cover plate and the substrate.

In an embodiment of the present invention, the above-mentioned optical sensing device further includes a second light-absorbing layer located on the side of the cover plate opposite to the first light-shielding layer, and the orthographic projection of the second light-absorbing layer on the cover plate overlaps the non-sensitive The orthographic projection of the measuring area on the cover plate.

In an embodiment of the present invention, the above-mentioned optical sensing device further includes a filter layer located on the side of the cover plate opposite to the first light-shielding layer, and the orthographic projection of the filter layer on the cover plate overlaps the sensing area at Orthographic projection of the cover.

In an embodiment of the present invention, the above-mentioned first light-shielding layer includes a first metal layer and a first metal oxide layer, the first metal layer is located between the first metal oxide layer and the sensing element layer, and the first The thickness of the metal oxide layer is between 450Å and 850Å.

In an embodiment of the present invention, the above-mentioned optical sensing device further includes an anti-reflection layer located between the first light-shielding layer and the sensing element layer.

In an embodiment of the present invention, the above-mentioned anti-reflection layer has a plurality of second openings, and the orthographic projection of the second openings on the substrate overlaps the orthographic projection of the sensing element on the substrate.

In an embodiment of the present invention, the above optical sensing device further includes an anti-reflection layer located between the sensing element layer and the substrate.

In an embodiment of the present invention, the above-mentioned anti-reflection layer includes a second metal layer and a second metal oxide layer, and the second metal oxide layer is located between the sensing element layer and the second metal layer.

Another embodiment of the present invention proposes an electronic device, comprising: the above optical sensing device; a display panel located on the first side of the optical sensing device; and an element with a reflective surface located on the first side of the optical sensing device two sides, and the second side is opposite to the first side.

In an embodiment of the present invention, the aforementioned element with a reflective surface is a conductive element, a heat dissipation element, a shielding element or a battery.

In an embodiment of the present invention, the above optical sensing device further includes a second light absorbing layer located between the display panel and the non-sensing area of the optical sensing device.

In an embodiment of the present invention, the above optical sensing device further includes a filter layer located between the display panel and the sensing area of the optical sensing device.

In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail together with the accompanying drawings.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Throughout the specification, the same reference numerals denote the same elements. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to physical and/or electrical connection. Furthermore, "electrically connected" or "coupled" may mean that other elements exist between two elements.

It should be understood that although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and and/or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first "element," "component," "region," "layer" or "section" discussed below could be termed a second element, component, region, layer or section without departing from the teachings herein.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" are intended to include plural forms including "at least one" or meaning "and/or" unless the content clearly dictates otherwise. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. It should also be understood that when used in this specification, the terms "comprising" and/or "comprising" designate the existence of said features, regions, integers, steps, operations, elements and/or parts, but do not exclude one or more Existence or addition of other features, regions, integers, steps, operations, elements, parts and/or combinations thereof.

Additionally, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe one element's relationship to another element as shown in the figures. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the figures. For example, if the device in one of the figures is turned over, elements described as being on the "lower" side of other elements would then be oriented on "upper" sides of the other elements. Thus, the exemplary term "below" can encompass both an orientation of "below" and "upper," depending on the particular orientation of the drawing. Similarly, if the device in one of the figures is turned over, elements described as "below" or "beneath" other elements would then be oriented "above" the other elements. Thus, the exemplary terms "below" or "beneath" can encompass both an orientation of above and below.

The terms "about," "approximately," or "substantially" as used herein include stated values and those within ordinary skill in the art, taking into account the measurements in question and the specific amount of error associated with the measurements (i.e., limitations of the measurement system). The average value within an acceptable range of deviation from a specified value as determined by a human being. For example, "about" can mean within one or more standard deviations, or within ±30%, ±20%, ±10%, ±5% of the stated value. Furthermore, "about", "approximately", or "substantially" used herein may select a more acceptable range of deviation or standard deviation based on optical properties, etching properties or other properties, and may not use one standard deviation to apply to all nature.

FIG. 1A is a schematic cross-sectional view of an optical sensing device 10 according to an embodiment of the invention. FIG. 1B is an enlarged schematic view of a region I of the optical sensing device 10 of FIG. 1A . First, please refer to FIG. 1A , the optical sensing device 10 includes: a substrate SB having opposite first surfaces S1 and second surfaces S2; a sensing element layer 110 located on the first surface S1 and including a plurality of sensing elements 112; the first light-shielding layer 121 is located on the sensing element layer 110 and has a plurality of openings O1, and the orthographic projection of the openings O1 on the substrate SB overlaps the orthographic projection of the sensing element 112 on the substrate SB; and the light-absorbing layer LAa is located on the second on the second surface S2.

In the optical sensing device 10 according to an embodiment of the present invention, by disposing the light absorbing layer LAa on the second surface S2 of the substrate SB, the reflected light of the light beam LB1 passing through the optical sensing device 10 can be absorbed to reduce the number of sensing elements. 112 sensing noise, thereby improving the sensing resolution of the optical sensing device 10 .

Hereinafter, with reference to FIG. 1A to FIG. 1B , the implementation of each element of the optical sensing device 10 will be continuously described, but the present invention is not limited thereto.

In this embodiment, the substrate SB of the optical sensing device 10 may be a transparent substrate or an opaque substrate, and its material may be a ceramic substrate, a quartz substrate, a glass substrate, a polymer substrate or other suitable materials, but is not limited thereto.

In this embodiment, the sensing element layer 110 may include a plurality of sensing elements 112 and a planar layer PL1. For example, referring to FIG. 1B , the planar layer PL1 of the sensing element layer 110 may include a planar layer PL1a and a planar layer PL1b. The sensing element 112 may be a visible light fingerprint sensing element or an invisible light fingerprint sensing element, such as an infrared light fingerprint sensing element. For example, the sensing element 112 may include an electrode E1, a sensing layer SR and an electrode E2, the sensing layer SR may be located between the electrode E1 and the electrode E2, and the electrode E2 may be located between the planar layer PL1a and the planar layer PL1b.

Specifically, the material of the electrode E1 may be molybdenum, aluminum, titanium, copper, gold, silver or other conductive materials, or an alloy combination or stack of two or more of the above materials. The material of the sensing layer SR may be Silicon-Rich Oxide (SRO), Silicon-Rich Oxide doped with Germanium, or other suitable materials. The material of the electrode E2 is preferably a transparent conductive material, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium gallium zinc oxide or other suitable oxides or at least two of the above Stack layers. The material of the planar layers PL1a and PL1b may include organic materials, such as acrylic materials, siloxane materials, polyimide materials, epoxy resin materials or a combination of the above materials. layer, but not limited to this.

Please refer to FIG. 1B , in some embodiments, the sensing element layer 110 may further include a plurality of switching elements TR, a gate insulating layer GI and an interlayer insulating layer IL, and the plurality of switching elements TR may be electrically connected to a plurality of sensing elements respectively. sensing elements 112 to individually control the operation of the sensing elements 112. For example, the switching element TR may be composed of a semiconductor layer TC, a gate TG, a source TS and a drain TD. The region where the semiconductor layer TC overlaps the gate TG can be regarded as the channel region of the switching element TR. The gate insulating layer GI is located between the gate TG and the semiconductor layer TC, and the interlayer insulating layer IL is located between the source TS and the gate TG and between the drain TD and the gate TG. The gate TG and the source TS can respectively receive signals from, for example, the driving element, and the electrode E1 of the sensing element 112 can be connected physically or electrically to the drain TD. When the gate TG receives a signal to turn on the switching element TR, the signal received by the source TS can be transmitted to the electrode E1 of the sensing element 112 through the drain TD.

For example, the material of the semiconductor layer TC may include silicon semiconductor material (such as polysilicon, amorphous silicon, etc.), oxide semiconductor material or organic semiconductor material, and the material of the gate TG, the source TS and the drain TD may include Metals with good electrical conductivity (such as aluminum, molybdenum, titanium, copper), alloys, or stacks of the above metals and/or alloys, but not limited thereto. Materials of the gate insulating layer GI and the interlayer insulating layer IL may include transparent insulating materials, such as silicon oxide, silicon nitride, silicon oxynitride, stacks of the above materials, or other suitable materials.

In this embodiment, the opening O1 of the first light-shielding layer 121 allows light to enter the sensing layer SR of the sensing element 112 , so as to adjust the light-receiving range of the sensing layer SR. In some embodiments, the first light shielding layer 121 may include a metal layer M1 and a metal oxide layer B1, wherein the metal layer M1 may be located between the metal oxide layer B1 and the sensing element layer 110, and the metal oxide layer B1 It can be formed by oxidation and blackening of the metal layer M1. For example, the metal layer M1 may include molybdenum (Mo), and the metal oxide layer B1 may include molybdenum tantalum oxide (MoTaOx) formed by oxidation and blackening of molybdenum. In some embodiments, the metal layer M1 may include titanium (Ti), and the metal oxide layer B1 may include titanium oxide (TiOx). In some embodiments, the metal layer M1 may include niobium (Nb), and the metal oxide layer B1 may include niobium oxide (NbOx). In some embodiments, the metal layer M1 may include tungsten (W), and the metal oxide layer B1 may include tungsten oxide (WOx).

In some embodiments, the metal oxide layer B1 can exhibit relatively low reflectivity when the thickness is between about 450 Å to 850 Å, while generating relatively less reflected stray light, thereby reducing the amount of light entering the sensing layer SR. noise-to-noise ratio, thereby improving the sensing resolution of the sensing element 112 .

In some embodiments, the optical sensing device 10 may further include a plurality of microlens structures ML. The microlens structure ML is located on the first light shielding layer 121 , and the orthographic projections of the microlens structure ML on the substrate SB respectively overlap the orthographic projections of the sensing element 112 on the substrate SB. Preferably, the central axis of the microlens structure ML can pass through the opening O1 and the sensing layer SR. More preferably, the central axis of the microlens structure ML may overlap with the central axis of the opening O1. The microlens structure ML may be a lens structure with a thicker center than an edge, such as a symmetrical bi-convex lens, an asymmetric bi-convex lens, a plano-convex lens or a concave-convex lens. The microlens structure ML can improve light collimation, avoid light leakage or light mixing problems caused by scattered light or refracted light, and thereby reduce light loss.

In some embodiments, the optical sensing device 10 may further include a second light-shielding layer 122, the second light-shielding layer 122 is located on the first light-shielding layer 121, and a flat surface may be set between the second light-shielding layer 122 and the first light-shielding layer 121. Layer PL2. The second light shielding layer 122 may have an opening O2, and the orthographic projection of the opening O2 on the substrate SB overlaps the orthographic projection of the opening O1 on the substrate SB. Preferably, the central axis of the opening O2 may overlap the central axis of the opening O1. In this way, the combination of the opening O2 and the opening O1 can regulate the light receiving angle of the sensing layer SR, so as to realize the light collimation design.

In some embodiments, the second light shielding layer 122 may include a metal layer M2 and a metal oxide layer B2 , and the metal layer M2 may be located between the metal oxide layer B2 and the first light shielding layer 121 . Similar to the first light shielding layer 121 , the metal oxide layer B2 of the second light shielding layer 122 can be formed by oxidation and blackening of the metal layer M2 . For example, when the metal layer M2 includes Mo, the metal oxide layer B2 may include MoTaOx; when the metal layer M2 includes Ti, the metal oxide layer B2 may include TiOx; when the metal layer M2 includes Nb, the metal oxide layer B2 may contain NbOx; and when the metal layer M2 contains W, the metal oxide layer B2 may contain WOx. In some embodiments, when the thickness of the metal oxide layer B2 is between about 450Å to 850Å, the metal oxide layer B2 can exhibit a relatively low reflectivity, so that the reflected stray light entering the sensing layer SR can Minimize, so as to reduce the noise-to-noise ratio entering the sensing layer SR, and improve the sensing resolution of the sensing element 112 .

In some embodiments, the optical sensing device 10 may further include a third light shielding layer 123, the third light shielding layer 123 may be located on the second light shielding layer 122, and a third light shielding layer 123 may be arranged between the second light shielding layer 122 Flattening layer PL3. The third light-shielding layer 123 may have an opening O3, and the microlens structure ML may be disposed in the opening O3, and the orthographic projection of the opening O3 on the substrate SB may overlap the orthographic projections of the openings O1 and O2 on the substrate SB, and the diameter of the opening O3 may be larger than the opening O3. Caliber of O1 and O2. Preferably, central axes of the opening O3, the openings O1, O2 and the microlens structure ML may overlap. In this way, the microlens structure ML combined with the openings O1 and O2 can regulate the light receiving angle of the sensing layer SR, so as to realize the light collimation design. In some embodiments, since the opening O3 of the third light shielding layer 123 may have a larger diameter, the material of the third light shielding layer 123 may include materials such as black resin or graphite.

In some embodiments, the third light shielding layer 123 may include a metal layer M3 and a metal oxide layer B3 , and the metal layer M3 may be located between the metal oxide layer B3 and the second light shielding layer 122 . Similar to the first light shielding layers 121 and 122 , the metal oxide layer B3 of the third light shielding layer 123 can be formed by oxidation and blackening of the metal layer M3 . For example, when the metal layer M3 includes Mo, the metal oxide layer B3 may include MoTaOx; when the metal layer M3 includes Ti, the metal oxide layer B3 may include TiOx; when the metal layer M3 includes Nb, the metal oxide layer B3 may contain NbOx; and when the metal layer M3 contains W, the metal oxide layer B3 may contain WOx. In some embodiments, when the thickness of the metal oxide layer B3 is between about 450Å to 850Å, the metal oxide layer B3 can exhibit a relatively low reflectivity, so that the reflected stray light entering the sensing layer SR can Minimize, so as to reduce the noise-to-noise ratio entering the sensing layer SR, thereby improving the sensing resolution of the sensing element 112 .

In some embodiments, the material of the flat layers PL2 and PL3 may include organic materials, such as acrylic materials, siloxane materials, polyimide materials, epoxy resins (epoxy) materials or stacks of the above materials, but not limited thereto.

In this embodiment, the optical sensing device 10 may have a sensing area SA and a non-sensing area NA, wherein the sensing element 112 may be located in the sensing area SA, and the orthographic projection of the light absorbing layer LAa on the substrate SB may overlap the sensing area. The orthographic projection of the survey area SA on the substrate SB. That is to say, the light absorbing layer LAa can be disposed on the sensing area SA. In this way, the stray light reflected by the sensing element 112 and the metal layer M1 after the light beam LB1 passes through the microlens structure ML and the openings O2 and O1 can be absorbed by the light-absorbing layer LAa and will not be reflected to the sensing element 112 again. And increase the sensing noise.

In some embodiments, the sensing area SA may be located in the central area of the optical sensing device 10 , and the non-sensing area NA may be located in the peripheral area of the optical sensing device 10 . For example, the non-sensing area NA may surround the sensing area SA, but not limited thereto. In some embodiments, the material of the light absorbing layer LAa may include black resin, but is not limited thereto.

In the following, other embodiments of the present invention are continued to be described using FIGS. 2 to 6, and the component numbers and related contents of the embodiment in FIGS. Descriptions of the same technical contents are omitted. For the description of the omitted parts, reference may be made to the embodiment shown in FIG. 1A to FIG. 1B , which will not be repeated in the following description.

FIG. 2 is a schematic cross-sectional view of an optical sensing device 20 according to an embodiment of the invention. The optical sensing device 20 includes: a substrate SB having opposite first surface S1 and a second surface S2; a sensing element layer 110 located on the first surface S1 and including a plurality of sensing elements 112; a first light-shielding layer 121 is located on the sensing element layer 110 and has a plurality of openings O1, the orthographic projection of the openings O1 on the substrate SB overlaps the orthographic projection of the sensing element 112 on the substrate SB; and the light absorbing layer LAb is located on the second surface S2.

Compared with the optical sensing device 10 shown in FIGS. 1A to 1B , the optical sensing device 20 shown in FIG. 2 is different in that: the orthographic projection of the light absorbing layer LAb on the substrate SB overlaps the non-sensing area NA in Orthographic projection of substrate SB. In other words, the light absorbing layer LAb of the optical sensing device 20 can be disposed in the non-sensing area NA. In this way, the light beam LB2 can be absorbed by the light absorbing layer LAb after passing through the flat layers PL3, PL2, PL1 and the substrate SB, and will not be reflected to the sensing element 112 to increase the sensing noise, so that the optical sensing device 20 Improved sensing resolution is possible.

In some embodiments, the optical sensing device 20 may further include the second light-shielding layer 122, the third light-shielding layer 123, a plurality of microlens structures ML, and flat layers PL2 and PL3 as described above, so that the first light-shielding layer 121 The opening O1 , the opening O2 of the second light-shielding layer 122 and the microlens structure ML can adjust the light receiving angle of the sensing element 112 , so as to realize the light collimation design. Although FIG. 1A and FIG. 2 illustrate that the first light shielding layer 121 , the second light shielding layer 122 and the third light shielding layer 123 are only located in the sensing area SA, they are not limited thereto. In some embodiments, the first light shielding layer 121 , the second light shielding layer 122 and the third light shielding layer 123 may also be located in the non-sensing area NA.

FIG. 3 is a schematic cross-sectional view of an optical sensing device 30 according to an embodiment of the invention. The optical sensing device 30 includes: a substrate SB having opposite first surface S1 and a second surface S2; a sensing element layer 110 located on the first surface S1 and including a plurality of sensing elements 112; a first light-shielding layer 121 , is located on the sensing element layer 110 and has a plurality of openings O1, the orthographic projection of the openings O1 on the substrate SB overlaps the orthographic projection of the sensing element 112 on the substrate SB; and the light absorbing layer LA1 is located on the second surface S2.

Compared with the optical sensing device 10 shown in FIGS. 1A to 1B , the difference of the optical sensing device 30 shown in FIG. 3 is that the light-absorbing layer LA1 may include a light-absorbing layer LAa and a light-absorbing layer LAb, and the light-absorbing layer The orthographic projection of LA1 on the substrate SB overlaps the orthographic projections of the sensing area SA and the non-sensing area NA on the substrate SB. In other words, the light absorbing layer LA1 of the optical sensing device 20 may be located in the sensing area SA and the non-sensing area NA. In this way, the stray light reflected by the sensing element 112 and the metal layer M1 after the light beam LB1 passes through the microlens structure ML and the openings O2 and O1 can be absorbed by the light-absorbing layer LAa, and at the same time, the light beam LB2 passes through the flat layers PL3 and PL2 , PL1 and the substrate SB can then be absorbed by the light absorbing layer LAb, and will not be reflected to the sensing element 112 to increase sensing noise, so that the optical sensing device 30 can have improved sensing resolution.

In some embodiments, the optical sensing device 30 may further include the second light-shielding layer 122, the third light-shielding layer 123, a plurality of microlens structures ML, and flat layers PL2 and PL3 as described above, and the first light-shielding layer 121 The opening O1 , the opening O2 of the second light-shielding layer 122 and the microlens structure ML can adjust the light receiving angle of the sensing element 112 , so as to realize the light collimation design.

FIG. 4 is a schematic cross-sectional view of an optical sensing device 40 according to an embodiment of the invention. The optical sensing device 40 includes: a substrate SB having opposite first surface S1 and a second surface S2; a sensing element layer 110 located on the first surface S1 and including a plurality of sensing elements 112; a first light-shielding layer 121 is located on the sensing element layer 110 and has a plurality of openings O1, the orthographic projection of the openings O1 on the substrate SB overlaps the orthographic projection of the sensing element 112 on the substrate SB; and the light absorbing layer LAb is located on the second surface S2.

Compared with the optical sensing device 20 shown in FIG. 2, the difference of the optical sensing device 40 shown in FIG. Between a light shielding layer 121 and the sensing element layer 110 .

In this embodiment, the anti-reflection layer AR1 may have a plurality of openings O4, and the openings O4 may overlap the openings O1 of the first light shielding layer 121 . In other words, the orthographic projection of the opening O4 on the substrate SB can overlap the orthographic projections of the opening O1 and the sensing element 112 on the substrate SB. In addition, the metal layer M1 of the first light-shielding layer 121 can be sandwiched between the metal oxide layer B1 and the anti-reflection layer AR1, and the material of the anti-reflection layer AR1 and the metal oxide layer B1 can be the same to prevent the metal layer M1 from The reflected light enters the sensing element 112 to improve the sensing resolution of the sensing element 112 . Although FIG. 4 illustrates that the anti-reflection layer AR1 is only located in the sensing area SA, it is not limited thereto. In some embodiments, the anti-reflection layer AR1 may also be located in the non-sensing area NA.

In some embodiments, the optical sensing device 40 may further include the second light-shielding layer 122, the third light-shielding layer 123, a plurality of microlens structures ML, and flat layers PL2 and PL3 as described above, and the first light-shielding layer 121 The opening O1 , the opening O4 of the anti-reflection layer AR1 , the opening O2 of the second light-shielding layer 122 , and the microlens structure ML can regulate the light receiving angle of the sensing element 112 , so as to realize the light collimation design.

FIG. 5 is a schematic cross-sectional view of an optical sensing device 50 according to an embodiment of the invention. The optical sensing device 50 includes: a substrate SB having opposite first surface S1 and a second surface S2; a sensing element layer 110 located on the first surface S1 and including a plurality of sensing elements 112; a first light-shielding layer 121 is located on the sensing element layer 110 and has a plurality of openings O1, the orthographic projection of the openings O1 on the substrate SB overlaps the orthographic projection of the sensing element 112 on the substrate SB; and the light absorbing layer LAb is located on the second surface S2.

Compared with the optical sensing device 20 shown in FIG. 2, the difference of the optical sensing device 50 shown in FIG. between the sensor layer 110 and the substrate SB.

In this embodiment, the anti-reflection layer AR2 may have a plurality of openings O5, and the orthographic projection of the openings O5 on the substrate SB may overlap the orthographic projection of the sensing element 112 on the substrate SB. In some embodiments, the optical sensing device 50 may further include a flat layer PL4 , and the flat layer PL4 may be disposed between the anti-reflection layer AR2 and the sensing element layer 110 . However, in some embodiments, the anti-reflection layer AR2 may blanket the entire substrate SB without any opening.

In some embodiments, the anti-reflection layer AR2 may include a metal layer M4 and a metal oxide layer B4, and the metal oxide layer B4 may be located between the sensing element layer 110 and the metal layer M4. The anti-reflection layer AR2 can prevent the light beam LB1 from being reflected by the sensing element 112 and the metal layer M1 from penetrating below the substrate SB, thereby reducing sensing noise generated by reflection of components below the substrate SB.

The materials of the anti-reflection layer AR2 and the first light-shielding layer 121 may be similar. For example, the metal oxide layer B4 of the anti-reflection layer AR2 can be formed by oxidation and blackening of the metal layer M4. For example, when the metal layer M4 contains Mo, the metal oxide layer B4 may contain MoTaOx. In some embodiments, metal layer M4 may include Ti, and metal oxide layer B4 may include TiOx. In some embodiments, the metal layer M4 may include Nb, and the metal oxide layer B4 may include NbOx. In some embodiments, the metal layer M4 may include W, and the metal oxide layer B4 may include WOx. In some embodiments, the material of the flat layer PL4 may include organic materials, such as acrylic material, siloxane material, polyimide material, epoxy material or A stack of the above materials, but not limited thereto.

In some embodiments, the optical sensing device 50 may further include the second light-shielding layer 122, the third light-shielding layer 123, a plurality of microlens structures ML, and flat layers PL2 and PL3 as described above, so that the first light-shielding layer 121 The opening O1 , the opening O2 of the second light-shielding layer 122 and the microlens structure ML can adjust the light receiving angle of the sensing element 112 , so as to realize the light collimation design.

FIG. 6 is a schematic cross-sectional view of an electronic device 100 according to an embodiment of the invention. The electronic device 100 may include: an optical sensing device 60 ; a display panel PN located above the optical sensing device 60 ; and an element BA with a reflective surface located below the optical sensing device 60 .

In this embodiment, the element BA with the reflective surface may be a battery, but it is not limited thereto. In some embodiments, the component BA with a reflective surface may be a conductive component, such as a connector with a metal film layer on its surface. In some embodiments, the component BA with a reflective surface may be a heat dissipation component with cooling fins disposed on its surface. In other embodiments, the component BA with a reflective surface may be a shielding component with a shielding film layer disposed on its surface.

In this embodiment, the optical sensing device 60 may include: a substrate SB having opposite first surface S1 and a second surface S2; a sensing element layer 110 located on the first surface S1 and including a plurality of sensing elements 112; the first light-shielding layer 121 is located on the sensing element layer 110 and has a plurality of openings O1, and the orthographic projection of the openings O1 on the substrate SB overlaps the orthographic projection of the sensing element 112 on the substrate SB; and the light-absorbing layer LA1 is located on the substrate Between the second surface S2 of SB and the element BA with reflective surface.

Compared with the optical sensing device 30 shown in FIG. 3, the difference of the optical sensing device 60 shown in FIG. And the sensing element layer 110 and the first light shielding layer 121 may be located between the cover plate CV and the substrate SB. The cover CV can be a transparent substrate, and its material can be a quartz substrate, a glass substrate, a polymer substrate or other suitable materials, but is not limited thereto.

In some embodiments, the optical sensing device 60 may further include the second light-shielding layer 122, the third light-shielding layer 123, a plurality of microlens structures ML, and flat layers PL2 and PL3 as described above, so that the first light-shielding layer 121 The microlens structure ML in the opening O1 , the opening O2 of the second light-shielding layer 122 , and the opening O3 of the third light-shielding layer 123 can adjust the light-receiving angle of the sensing element 112 to realize light collimation design.

In some embodiments, the optical sensing device 60 may further include a spacer SM, which can maintain a stable distance GP between the cover plate CV and the third light-shielding layer 123, and at the same time prevent the microlens structure ML from being crushed, thereby The adjustment of the optical focus point and the light collection angle is improved to increase the sensing resolution of the optical sensing device 60 .

In some embodiments, the optical sensing device 60 may further include a light absorbing layer LA2, and the light absorbing layer LA2 may be located on a side of the cover CV opposite to the first light shielding layer 121 . Specifically, the cover CV may have opposite first surface C1 and second surface C2, the second surface C2 may face the first light shielding layer 121, and the light absorbing layer LA2 may be located on the first surface C1 of the cover CV. In addition, the orthographic projection of the light absorbing layer LA2 on the cover CV may overlap the orthographic projection of the non-sensing area NA on the cover CV. In other words, the light absorbing layer LA2 may be located between the non-sensing area NA of the optical sensing device 60 and the display panel PN. In this way, when the light beam LB2 entering the non-sensing area NA passes through the light-absorbing layer LA2, part of the light can be absorbed by the light-absorbing layer LA2, while the other part of the light passes through the cover plate CV, the flat layers PL3, PL2, PL1 and the substrate SB Then it can be absorbed by the light absorbing layer LAb again, so as not to be reflected by the element BA with a reflective surface and increase the sensing noise of the optical sensing device 60 .

In some embodiments, the optical sensing device 60 may further include a filter layer LF, wherein the filter layer LF may be located between the display panel PN and the optical sensing device 60, and the light absorption layer LA2 may be located between the filter layer LF and the cover. between the plates CV, and the orthographic projection of the filter layer LF on the cover plate CV at least overlaps the orthographic projection of the sensing area SA on the cover plate CV. In some embodiments, the orthographic projection of the filter layer LF on the cover CV may overlap the orthographic projection of the sensing area SA and part of the non-sensing area NA on the cover CV. In some embodiments, the material of the filter layer LF may include, for example, a color resist material, but is not limited thereto. In this way, when the light beam LB1 entering the sensing area SA passes through the filter layer LF, part of the light (such as invisible light) can be absorbed by the filter layer LF, while the rest of the light (such as visible light) passes through the microlens structure ML and The stray light generated by the reflection of the sensing element 112 and the metal layer M1 after the openings O2 and O1 can be absorbed by the light absorbing layer LAa, so as to reduce the sensing noise of the optical sensing device 60 .

In summary, the optical sensing device of the present invention can reduce the sensing noise generated by the reflected stray light of the light beam passing through the optical sensing device by providing a light absorbing layer on the second surface of the substrate, thereby improving the performance of the optical sensing device. sensing resolution.

Although the present invention has been disclosed above with the embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field may make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention should be defined by the scope of the appended patent application.

10, 20, 30, 40, 50, 60: optical sensing device 100: Electronic device 110: sensing element layer 112: sensing element 121: the first shading layer 122: the second shading layer 123: the third shading layer AR1, AR2: anti-reflection layer B1, B2, B3, B4: metal oxide layer BA: Components with reflective surfaces C1: first surface C2: second surface CV: Cover E1, E2: electrodes GI: gate insulating layer GP: spacing I: area IL: interlayer insulating layer LA1, LA2, LAa, LAb: light absorbing layer LB1, LB2: Beam LF: filter layer M1, M2, M3, M4: metal layer ML: microlens structure NA: non-sensing area O1, O2, O3, O4, O5: opening PL1, PL1a, PL1b, PL2, PL3, PL4: Planarization layer PN: display panel S1: first surface S2: second surface SA: sensing area SB: Substrate SM: spacer SR: sensing layer TC: semiconductor layer TD: drain TG: gate TR: switching element TS: source

FIG. 1A is a schematic cross-sectional view of an optical sensing device 10 according to an embodiment of the invention. FIG. 1B is an enlarged schematic view of a region I of the optical sensing device 10 of FIG. 1A . FIG. 2 is a schematic cross-sectional view of an optical sensing device 20 according to an embodiment of the invention. FIG. 3 is a schematic cross-sectional view of an optical sensing device 30 according to an embodiment of the invention. FIG. 4 is a schematic cross-sectional view of an optical sensing device 40 according to an embodiment of the invention. FIG. 5 is a schematic cross-sectional view of an optical sensing device 50 according to an embodiment of the invention. FIG. 6 is a schematic cross-sectional view of an electronic device 100 according to an embodiment of the invention.

10: Optical sensing device

110: sensing element layer

112: sensing element

121: the first shading layer

122: the second shading layer

123: the third shading layer

B1, B2, B3: metal oxide layer

I: area

LAa: light absorbing layer

LB1: Beam

M1, M2, M3: metal layer

ML: microlens structure

NA: non-sensing area

O1, O2, O3: opening

PL1, PL2, PL3: flat layer

S1: first surface

S2: second surface

SA: sensing area

SB: Substrate

Claims (17)

An optical sensing device, comprising: a substrate having opposing first and second surfaces; a sensing element layer located on the first surface and including a plurality of sensing elements; The first light shielding layer is located on the sensing element layer and has a plurality of first openings, wherein the orthographic projection of the first openings on the substrate overlaps the orthographic projection of the sensing element on the substrate; and The first light absorbing layer is located on the second surface. The optical sensing device as claimed in claim 1, wherein the optical sensing device has a sensing area and a non-sensing area, the non-sensing area surrounds the sensing area, and the plurality of sensing elements located in the sensing area. The optical sensing device according to claim 2, wherein the orthographic projection of the first light absorbing layer on the substrate overlaps the orthographic projection of the sensing region on the substrate. The optical sensing device according to claim 2, wherein the orthographic projection of the first light absorbing layer on the substrate overlaps the orthographic projection of the non-sensing region on the substrate. The optical sensing device according to claim 2, wherein the orthographic projection of the first light absorbing layer on the substrate overlaps the orthographic projection of the sensing region and the non-sensing region on the substrate. The optical sensing device according to claim 2 further includes a cover plate opposite to the substrate, and the sensing element layer and the first light-shielding layer are located between the cover plate and the substrate. The optical sensing device according to claim 6, further comprising a second light-absorbing layer located on the side of the cover plate opposite to the first light-shielding layer, and the second light-absorbing layer is on the side of the cover plate The orthographic projection overlaps the non-sensing area with the orthographic projection of the cover plate. The optical sensing device according to claim 6, further comprising a filter layer, located on the side of the cover plate opposite to the first light-shielding layer, and the filter layer is on the front projection of the cover plate The orthographic projection of the sensing area is superimposed on the cover plate. The optical sensing device according to claim 1, wherein the first light-shielding layer includes a first metal layer and a first metal oxide layer, and the first metal layer is located between the first metal oxide layer and the Between the sensing element layers, the thickness of the first metal oxide layer is between 450Å and 850Å. The optical sensing device according to claim 1, further comprising an anti-reflection layer located between the first light-shielding layer and the sensing element layer. The optical sensing device according to claim 10, wherein the anti-reflection layer has a plurality of second openings, and the orthographic projection of the second openings on the substrate overlaps the orthographic projection of the sensing element on the substrate projection. The optical sensing device according to claim 1, further comprising an anti-reflection layer located between the sensing element layer and the substrate. The optical sensing device according to claim 12, wherein the anti-reflection layer includes a second metal layer and a second metal oxide layer, and the second metal oxide layer is located between the sensing element layer and the between the second metal layer. An electronic device comprising: The optical sensing device as claimed in claim 1; a display panel located on the first side of the optical sensing device; and An element with a reflective surface is located on a second side of the optical sensing device, and the second side is opposite to the first side. The electronic device as claimed in claim 14, wherein the element with a reflective surface is a conductive element, a heat dissipation element, a shielding element or a battery. The electronic device as claimed in claim 14, wherein the optical sensing device further comprises a second light absorbing layer located between the display panel and the non-sensing area of the optical sensing device. The electronic device as claimed in claim 14, wherein the optical sensing device further includes a filter layer located between the display panel and the sensing area of the optical sensing device.

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