TWI655788B - Sensing unit and manufacturing method thereof - Google Patents

Abstract

A sensing unit includes a first insulating layer, a photosensitive element, a diode element, and a light emitting element. The photosensitive element is disposed on the first insulating layer. The photosensitive element includes a first lower electrode, a sensing layer, and a first upper electrode. The first lower electrode is on the first insulating layer. The diode element is disposed on the first insulating layer. The diode element includes a second lower electrode, a semiconductor layer, and a second upper electrode. The second lower electrode is on the first insulating layer. The light emitting element is disposed above the light receiving element. The light emitting element includes a third lower electrode, a light emitting layer, and a third upper electrode. Among the second lower electrode and the second upper electrode of the diode element, those serving as the anode and those serving as the cathode are respectively electrically coupled to the third lower electrode and the third upper electrode of the light-emitting element as The cathode and the anode.

Description

Sensing unit and manufacturing method thereof

The invention relates to a sensing unit and a manufacturing method thereof.

Fingerprints are excellent biometric passwords and are unique. As equipment and identification technologies have gradually matured and become commonplace, in addition to personal identification, financial system identification, home protection access control, and other places that require a high degree of access control, they have also begun to be applied to personal electronic products, such as personal A computer that recognizes logins and USB flash drives. In recent years, it has been widely used in mobile devices. For example, a common practice is to additionally install a fingerprint reader on a mobile device. In addition, there is also a method for directly integrating fingerprint recognition technology on a display screen of a mobile device. How to simplify the fingerprint identification technology process and reduce the cost is one of the topics that the industry is committed to.

The invention provides a sensing unit and a manufacturing method thereof. Such a sensing unit is particularly applicable to fingerprint recognition.

According to some embodiments, the sensing unit includes a substrate, a reading element, a first insulating layer, a photosensitive element, a diode element, a protective layer, and A light emitting element. The reading element is located on the substrate. The first insulating layer is located on the substrate. The photosensitive element is disposed on the first insulating layer. The photosensitive element includes a first lower electrode, a sensing layer and a first upper electrode. The first lower electrode is located on the first insulating layer and is electrically connected to the reading element. The sensing layer is located on the first lower electrode. The first upper electrode is located on the sensing layer. The diode element is disposed on the first insulating layer. The diode element includes a second lower electrode, a semiconductor layer, and a second upper electrode. The second lower electrode is on the first insulating layer. The semiconductor layer is on the second lower electrode. The second upper electrode is on the semiconductor layer. The protective layer is disposed on the reading element, the photosensitive element, and the diode element. The light emitting element is disposed above the light receiving element. The light-emitting element includes a third lower electrode, a light-emitting layer, and a third upper electrode. The light emitting layer is on the third lower electrode. The third upper electrode is located on the light emitting layer. The anode of the second lower electrode and the second upper electrode of the diode element is electrically connected to the cathode of the third lower electrode and the third upper electrode of the light emitting element, and Among the second lower electrode and the second upper electrode of the polar element, the one serving as the cathode is electrically coupled to both the third lower electrode and the third upper electrode of the light emitting element serving as the anode.

According to some embodiments, a method of manufacturing a sensing unit includes the following steps. First, a gate is formed on a substrate. An insulating material layer is formed on the substrate. The insulating material layer includes a first insulating layer and a gate insulating layer connected to the first insulating layer. The gate insulating layer covers the gate. A channel layer is formed on the gate insulating layer. A first patterned conductive layer is formed on the first insulating layer and the gate insulating layer. The first patterned conductive layer includes a source electrode, a drain electrode, a first lower electrode, and a second lower electrode. The source electrode and the drain electrode are correspondingly disposed on two sides of the channel layer. On the first lower electrode A sensing layer is formed thereon, and a semiconductor layer is formed on the second lower electrode. A second insulating layer is formed on the first patterned conductive layer. A second patterned conductive layer is formed on the sensing layer and the semiconductor layer. The second patterned conductive layer includes a first upper electrode formed on the sensing layer and a second upper electrode formed on the semiconductor layer. A third insulating layer is formed on the first upper electrode and the second upper electrode. A third lower electrode is formed on the third insulating layer. A light emitting layer is formed on the third lower electrode. A fourth insulating layer is formed on the third insulating layer. Next, a third upper electrode is formed on the light emitting layer. The fourth insulating layer is located between the third lower electrode and the third upper electrode. The first lower electrode, the sensing layer, and the first upper electrode constitute a photosensitive element, the second lower electrode, the semiconductor layer, and the second upper electrode constitute a diode element, and the third lower electrode, the light emitting layer, and the third upper electrode constitute A light-emitting element, wherein the light-emitting element is correspondingly disposed above the photosensitive element. The anode of the second lower electrode and the second upper electrode of the diode element is electrically connected to the cathode of the third lower electrode and the third upper electrode of the light emitting element, and Among the second lower electrode and the second upper electrode of the polar element, the one serving as the cathode is electrically coupled to both the third lower electrode and the third upper electrode of the light emitting element serving as the anode.

In order to have a better understanding of the above and other aspects of the present invention, the following specific examples are described in detail below in conjunction with the accompanying drawings:

10‧‧‧ finger

20‧‧‧Capacitor

30‧‧‧AC drive power

100, 200‧‧‧ sensing unit

102‧‧‧ substrate

104‧‧‧Reading element

106‧‧‧Gate

108‧‧‧Channel layer

110‧‧‧Source

112‧‧‧ Drain

114‧‧‧Light-shielding layer

116‧‧‧Insulating material layer

116a‧‧‧Gate insulation

116b‧‧‧First insulation layer

118‧‧‧photosensitive element

120‧‧‧First lower electrode

122‧‧‧sensing layer

124‧‧‧p-type material layer

126‧‧‧ Material layer

128‧‧‧n-type material layer

130‧‧‧first upper electrode

132, 232‧‧‧diode element

134, 234‧‧‧Second lower electrode

136, 236‧‧‧Semiconductor layer

138, 238‧‧‧p-type material layer

140, 240‧‧‧ material layer

142, 242‧‧‧n-type material layer

144, 244‧‧‧Second upper electrode

146‧‧‧protective layer

148, 248‧‧‧Second insulation layer

150, 250‧‧‧ Third insulation layer

152, 252‧‧‧light-emitting elements

154, 254‧‧‧ Third lower electrode

156, 256‧‧‧ luminescent layer

158‧‧‧n-type material layer

160‧‧‧ Material layer

162‧‧‧p-type material layer

258‧‧‧p-type material layer

260‧‧‧ Material layer

262‧‧‧n-type material layer

164, 264‧‧‧ Third upper electrode

166, 266‧‧‧ Fourth insulation layer

168‧‧‧Encapsulation layer

170, 270‧‧‧First guide hole

172, 272‧‧‧Second guide hole

174, 274‧‧‧th third guide hole

176, 276‧‧‧ Fourth guide hole

178, 278‧‧‧first conduction structure

180, 280‧‧‧ second conduction structure

182, 282‧‧‧first connection electrode

184, 284‧‧‧Second connection electrode

186, 286‧‧‧third connection electrode

188, 288‧‧‧ Fourth connection electrode

190, 290‧‧‧‧The first patterned conductive layer

192, 292‧‧‧ second patterned conductive layer

FIG. 1A illustrates a sensing unit according to an embodiment of the invention.

FIG. 1B illustrates an equivalent circuit of the sensing unit illustrated in FIG. 1A.

FIG. 2A illustrates a sensing unit according to another embodiment of the present invention.

FIG. 2B illustrates an equivalent circuit of the sensing unit illustrated in FIG. 2A.

FIG. 2C illustrates an equivalent circuit of the sensing unit illustrated in FIG. 2A.

3A to 3D illustrate a method for manufacturing a sensing unit according to an embodiment of the present invention.

4A to 4D illustrate a method for manufacturing a sensing unit according to another embodiment of the present invention.

Hereinafter, various embodiments will be described in more detail with reference to the drawings. It should be noted that elements in the drawings may not be drawn to scale. Also, some components may be omitted. To facilitate understanding, where possible, the same component symbols are used for the same components that are common to the figures. It is expected that elements and features in one embodiment can be advantageously incorporated in another embodiment, but this is not further enumerated.

The sensing unit according to the embodiment includes a substrate, a reading element, a first insulating layer, a photosensitive element, a diode element, a protective layer, and a light emitting element. The reading element is located on the substrate. The first insulating layer is located on the substrate. The photosensitive element is disposed on the first insulating layer. The photosensitive element includes a first lower electrode, a sensing layer and a first upper electrode. The first lower electrode is located on the first insulating layer and is electrically connected to the reading element. The sensing layer is located on the first lower electrode. The first upper electrode is located on the sensing layer. The diode element is disposed on the first insulating layer. The diode element includes a second lower electrode, a semiconductor layer, and a second upper electrode. The second lower electrode is on the first insulation On the floor. The semiconductor layer is on the second lower electrode. The second upper electrode is on the semiconductor layer. The protective layer is disposed on the reading element, the photosensitive element, and the diode element. The light emitting element is disposed above the light receiving element. The light-emitting element includes a third lower electrode, a light-emitting layer, and a third upper electrode. The light emitting layer is on the third lower electrode. The third upper electrode is located on the light emitting layer. The anode of the second lower electrode and the second upper electrode of the diode element is electrically connected to the cathode of the third lower electrode and the third upper electrode of the light emitting element, and Among the second lower electrode and the second upper electrode of the polar element, the one serving as the cathode is electrically coupled to both the third lower electrode and the third upper electrode of the light emitting element serving as the anode.

Please refer to FIG. 1A, which illustrates a sensing unit according to an embodiment of the present invention. The light emitting elements of the sensing unit 100 have opposite polarities to the diode elements. The sensing unit 100 includes a substrate 102, a reading element 104, a first insulating layer 116b, a photosensitive element 118, a diode element 132, a protective layer 146, and a light emitting element 152. The reading element 104 of the sensing unit 100 is located on the substrate 102. The reading element 104 is, for example, a thin film transistor. According to an embodiment, the read element 104 may include a gate 106, a gate insulating layer 116a, a channel layer 108, a source 110, and a drain 112. According to an embodiment, the sensing unit 100 may further include a light shielding layer 114. The gate electrode 106 and the light-shielding layer 114 are located on the substrate 102, and both of them may be formed of the same patterned film layer, for example. An insulating material layer 116 is disposed on the substrate 102. In this embodiment, the insulating material layer 116 includes a gate insulating layer 116a and a first insulating layer 116b. The gate insulating layer 116a and the first insulating layer 116b are connected to each other. The gate insulating layer 116a covers the gate 106, and the first insulating layer 116b covers the light shielding layer 114. Channel layer 108 It is disposed on the gate insulating layer 116 a and is disposed corresponding to the gate 106. The source electrode 110 and the drain electrode 112 are located on the gate insulating layer 116 a, and the source electrode 110 and the drain electrode 112 are respectively disposed on two sides of the channel layer 108.

In this embodiment, the photosensitive element 118 is disposed on the first insulating layer 116b. In one embodiment, the light shielding layer 114 is disposed under the photosensitive element 118. The photosensitive element 118 includes a first lower electrode 120, a sensing layer 122 and a first upper electrode 130. The first lower electrode 120 is located on the first insulating layer 116 b and is electrically connected to the reading element 104. According to an embodiment, the drain electrode 112 of the reading element 104 is electrically connected to the first lower electrode 120. According to an embodiment, the drain electrode 112 and the first lower electrode 120 may be formed of the same patterned film layer. The sensing layer 122 is located on the first lower electrode 120. In an embodiment, as shown in FIG. 1A, the sensing layer 122 includes a p-type material layer 124, an essential material layer 126, and an n-type material layer 128, where the p-type material layer 124 is located on the first lower electrode 120. Above, the intrinsic material layer 126 is located on the p-type material layer 124, and the n-type material layer 128 is located on the essential material layer 126. Hereinafter, such a configuration in which a p-type material layer, an essential material layer, and an n-type material layer are sequentially stacked from bottom to top is referred to as a PIN structure. In another embodiment, the sensing layer 122 may include a p-type material layer and an n-type material layer, wherein the p-type material layer is located on the first lower electrode 120 and the n-type material layer is located on the p-type material layer. Hereinafter, such a configuration in which a p-type material layer and an n-type material layer are sequentially stacked from bottom to top is referred to as a PN structure. In yet another embodiment, the sensing layer 122 may include a p-type material layer and an essential material layer, wherein the p-type material layer is located on the first lower electrode 120 and the essential material layer is located on the p-type material layer. Hereinafter, such a configuration in which p-type material layers and essential material layers are sequentially stacked from bottom to top is referred to as a PI structure. In yet another embodiment, the sensing layer 122 may include An essential material layer and an n-type material layer, wherein the essential material layer is located on the first lower electrode 120 and the n-type material layer is located on the essential material layer. Hereinafter, such a configuration in which an essential material layer and an n-type material layer are sequentially stacked from bottom to top is referred to as an IN structure. In this and other similar descriptions, the essential material layer should be interpreted as also including an example in which the doping concentration is extremely low compared to the p-type material layer and the n-type material layer and is close to the essential material. The first upper electrode 130 is located on the sensing layer 122.

In this embodiment, the diode element 132 is disposed on the first insulating layer 116b. The diode element 132 includes a second lower electrode 134, a semiconductor layer 136, and a second upper electrode 144. The second lower electrode 134 is located on the first insulating layer 116b. The semiconductor layer 136 is located on the second lower electrode 134. In one embodiment, as shown in FIG. 1A, the semiconductor layer 136 has a PIN structure. That is, the semiconductor layer 136 includes a p-type material layer 138, an essential material layer 140, and an n-type material layer 142. The p-type material layer 138 is located on the first lower electrode 120 and the essential material layer 140 is located on the p-type material layer. On 138, the n-type material layer 142 is located on the essential material layer 140. In another embodiment, the semiconductor layer 136 has a PN structure. In yet another embodiment, the semiconductor layer 136 has a PI structure. In yet another embodiment, the semiconductor layer 136 has an IN structure. The second upper electrode 144 is located on the semiconductor layer 136.

According to an embodiment, the first lower electrode 120 of the photosensitive element 118 and the second lower electrode 134 of the diode element 132 may be formed of the same patterned film layer. The semiconductor layer 136 may be formed of the same patterned film layer, and the first upper electrode 130 of the photosensitive element 118 and the second upper electrode 144 of the diode element 132 may be formed of the same patterned film layer. Here with other classes As stated, the patterned film layer may include one or more layers. In addition, according to an embodiment, the first lower electrode 120 of the photosensitive element 118 and the second lower electrode 134 of the diode element 132 are located on the same first insulating layer 116b. According to another embodiment, the first lower electrode 120 of the photosensitive element 118 and the second lower electrode 134 of the diode element 132 are located on the surface of the first insulating layer 116b.

The sensing unit 100 further includes a protective layer 146. The protective layer 146 is disposed on the reading element 104, the photosensitive element 118, and the diode element 132. In an embodiment, as shown in FIG. 1A, the protective layer 146 includes a second insulating layer 148 and a third insulating layer 150. The second insulating layer 148 is disposed on the first insulating layer 116b and covers the reading element 104, a portion of the first lower electrode 120, and a portion of the second lower electrode 134. The third insulating layer 150 is disposed on the first upper electrode 130 and a portion of the second upper electrode 144.

In this embodiment, the light emitting element 152 is disposed above the light receiving element 118. The light-emitting element 152 includes a third lower electrode 154, a light-emitting layer 156, and a third upper electrode 164. The third lower electrode 154 of the light emitting element 152 is located on the third insulating layer 150. The light emitting layer 156 is located on the third lower electrode 154. In an embodiment, as shown in FIG. 1A, the light-emitting layer 156 includes an n-type material layer 158, an essential material layer 160, and a p-type material layer 162, where the n-type material layer 158 is located on the third lower electrode 154. The essential material layer 160 is located on the n-type material layer 158, and the p-type material layer 162 is located on the essential material layer 160. Hereinafter, such a configuration in which an n-type material layer, an essential material layer, and a p-type material layer are sequentially stacked from bottom to top is referred to as a NIP structure. In another embodiment, the light-emitting layer 156 may include an n-type material layer and a p-type material layer, where the n-type material layer is located at the third lower electrode. On 154, the p-type material layer is located on the n-type material layer. Hereinafter, such a configuration in which n-type material layers and p-type material layers are sequentially stacked from bottom to top is referred to as an NP structure. In yet another embodiment, the light emitting layer 156 may include a material layer and a p-type material layer, wherein the material layer is located on the third lower electrode 154 and the p-type material layer is located on the material layer. Hereinafter, such a configuration in which an essential material layer and a p-type material layer are sequentially stacked from bottom to top is referred to as an IP structure. In yet another embodiment, the light emitting layer 156 may include an n-type material layer and an essential material layer, wherein the n-type material layer is located on the third lower electrode 154 and the essential material layer is located on the n-type material layer. Hereinafter, such a configuration in which n-type material layers and essential material layers are sequentially stacked from bottom to top is referred to as an NI structure. The third upper electrode 164 is located on the light emitting layer 156.

The sensing unit 100 may further include a fourth insulating layer 166. The fourth insulating layer 166 is disposed on the third lower electrode 154 of a part of the light-emitting element 152, and the third upper electrode 164 of the light-emitting element 152 is located on the fourth insulating layer 166. The sensing unit 100 may further include a packaging layer 168. The encapsulation layer 168 is disposed on the light emitting element 152.

The anode of the second lower electrode 134 and the second upper electrode 144 of the diode element 132 is electrically coupled to both the third lower electrode 154 and the third upper electrode 164 of the light emitting element 152. As the cathode. The cathode of the second lower electrode 134 and the second upper electrode 144 of the diode element 132 is electrically coupled to both the third lower electrode 154 and the third upper electrode 164 of the light emitting element 152. As the anode. In the embodiment shown in FIG. 1A, the second lower electrode 134 serves as the anode of the diode element 132, and is electrically connected to the third lower electrode 154 serving as the cathode of the light-emitting element 152, and the second upper electrode 144 serves as The cathode of the polar element 132 is electrically connected to the third upper electrode 164 as the anode of the light-emitting element 152.

Please refer to FIG. 1B, which shows an equivalent circuit of the sensing unit shown in FIG. 1A. As shown in FIG. 1B, the light-emitting element 152 and the diode element 132 are connected in parallel with opposite polarities. That is, the anode of the light-emitting element 152 is located above and the anode of the diode element 132 is located below. The anode of the light-emitting element 152 is electrically connected to the cathode of the diode element 132, and the cathode of the light-emitting element 152 is connected to the diode The anode of the element 132 is electrically connected. The sensing unit 100 can be electrically connected to an AC driving power source 30 (not shown in FIG. 1A). In one embodiment, the third lower electrode 154 of the light-emitting element 152 may be electrically connected to a live wire (not shown) of the AC driving power source 30. The user's body can be regarded as ground, and can be regarded as being electrically connected to the other end (ground end) of the AC driving power source 30. When the user's finger 10 touches the encapsulation layer 168 (especially when the crest portion of the fingerprint of the user's finger 10 touches the encapsulation layer 168), as shown in FIG. Capacitance 20 will be formed between. For the AC power provided by the AC driving power source 30, the capacitor 20 can be regarded as a short circuit, so that the electric charges are conducted to the light emitting element 152 and the diode element 132, and a current flows through the light emitting element 152 and the diode element 132, resulting The current loop causes the light-emitting element 152 to emit light. Therefore, a mechanism for driving the light emitting element 152 to emit light can be formed by the fingerprint of the user's finger. After the light emitting element 152 emits light, the light beam is directed toward the photosensitive element 118, and the photosensitive element 118 senses the light and transmits the signal to the reading element 104 to obtain Corresponding image signal can realize fingerprint identification.

Please refer to FIG. 1A again, since the photosensitive element 118 of the sensing unit 100 receives light emitted from the light emitting element 152, the film layer between the sensing layer 122 and the light emitting layer 156 can be made of a transparent material. For example, the first upper electrode 130 and the third lower electrode 154 may be formed of a transparent conductive material such as indium tin oxide (ITO) or the like. Other elements formed using the same patterned film layer, such as the second upper electrode 144, may also be formed of a transparent conductive material such as indium tin oxide. In an embodiment, in order to avoid ambient light interference, a light shielding structure may be formed under the sensing layer 122 and above the light emitting layer 156. For example, the light shielding layer 114 and the third upper electrode 164 may be formed using an opaque conductive material such as metal. In addition, the first lower electrode 120 and other elements formed with the same patterned film layer as the second lower electrode 134 may be formed using an opaque conductive material such as a metal.

In an embodiment, as shown in FIG. 1A, the sensing unit 100 may further include a first conducting structure 178 and a second conducting structure 180, wherein the second lower electrode 134 of the diode element 132 passes through the first The conducting structure 178 is electrically connected to the third lower electrode 154 of the light emitting element 152, and the second upper electrode 144 of the diode element 132 is electrically connected to the third upper electrode 164 of the light emitting element 152 through the second conducting structure 180. Specifically, in an embodiment, the second insulating layer 148 may have a first via hole 170, the third insulating layer 150 may have a second via hole 172 and a third via hole 174, and the fourth insulating layer 166 There may be a fourth guide hole 176. The first conductive structure 178 is located in the first conductive hole 170 and the second conductive hole 172, that is, the first conductive structure 178 is filled in the first conductive hole 170 and the second conductive hole 172, and the diode element 132 The second lower electrode 134 is electrically connected to the third lower electrode 154 of the light-emitting element 152 through the first conductive structure 178. The second conductive structure 180 is located in the third conductive hole 174 and the fourth conductive hole 176, that is, the second conductive structure 180 is filled in the third conductive hole 174 and the fourth conductive hole 176, and the diode element 132 The second upper electrode 144 is electrically connected to the third upper electrode 164 of the light-emitting element 152 through the second conductive structure 180.

Please refer to FIGS. 2A to 2C. FIG. 2A illustrates a sensing unit according to another embodiment of the present invention. The light-emitting element 252 and the diode element 232 of such a sensing unit 200 are stacked in a structure with the same polarity. However, by adjusting the configuration of the coupling structure (such as the conduction structure), the anode of the light-emitting element is connected to the cathode of the diode element, and the cathode of the light-emitting element is connected to the anode of the diode element, so that the circuit is equivalent to the opposite polarity Way in parallel. In the following, only the differences between this sensing unit 200 and the sensing unit 100 shown in FIG. 1A will be described, and other details will not be repeated.

The light emitting layer 256 of the light emitting element 252 of the sensing unit 200 shown in FIG. 2A has a PIN structure. That is, the light emitting layer 256 includes a p-type material layer 258, an essential material layer 260, and an n-type material layer 262. The p-type material layer 258 is located on the third lower electrode 254, and the essential material layer 260 is located on the p-type material layer. On 258, the n-type material layer 262 is located on the essential material layer 260. According to other embodiments, the light emitting layer 256 may have a PI structure, an IN structure, or a PN structure. Therefore, the third lower electrode 254 of the light emitting element 252 is an anode, and the third upper electrode 264 is a cathode.

The semiconductor layer 236 of the diode element 232 of the sensing unit 200 also has a PIN structure. That is, the semiconductor layer 236 includes a p-type material layer 238, an essential material layer 240, and an n-type material layer 242. The p-type material layer 238 is located on the second lower electrode 234, and the essential material layer 240 is located on the p-type material layer. On 238, the n-type material layer 242 is located on the essential material layer 240. According to other embodiments, the semiconductor layer 236 may have a PI structure, an IN structure, or a PN structure. Therefore, the second lower electrode 234 of the diode element 232 is an anode, and the second upper electrode 244 is a cathode. In the embodiment shown in FIG. 2A, the second lower electrode 234, which is the anode of the diode element 232, and the light emitting element, The third upper electrode 264 of the cathode of the element 252 is electrically connected, and the second upper electrode 244 of the cathode of the diode element 232 is electrically connected to the third lower electrode 254 of the light emitting element 252.

The above-mentioned electrical connection can be achieved by adjusting the configurations of the diode element 232 and the conducting structure coupled to the diode element 232 and the light-emitting element 252. As shown in FIG. 2A, the sensing unit 200 may further include a first conducting structure 278 and a second conducting structure 280. The second lower electrode 234 of the diode element 232 is electrically connected to the first conducting structure 278. The third upper electrode 264 is connected to the light emitting element 252, and the second upper electrode 244 of the diode element 232 is electrically connected to the third lower electrode 254 of the light emitting element 252 through the second conductive structure 280. Specifically, in an embodiment, the second insulating layer 248 may have a first via hole 270, the third insulating layer 250 may have a second via hole 272 and a third via hole 274, and the fourth insulating layer 266 There may be a fourth guide hole 276. The first via structure 278 is located in the first via hole 270, the second via hole 272, and the fourth via hole 276. That is, the first via structure 278 fills the first via hole 270, the second via hole 272, and the first via hole 270. In the four via holes 276, the second lower electrode 234 of the diode element 232 is electrically connected to the third upper electrode 264 of the light emitting element 252 through the first conductive structure 278. The second conductive structure 280 is located in the third conductive hole 274, that is, the second conductive structure 280 is filled in the third conductive hole 274, and the second upper electrode 244 of the diode element 232 passes through the second conductive structure. 280 is electrically connected to the third lower electrode 254 of the light-emitting element 252.

FIG. 2B illustrates an equivalent circuit of the sensing unit 200 illustrated in FIG. 2A. As shown in FIG. 2A, the elements of the light-emitting element 252 and the diode element 232 are in a structure The tops are stacks with the cathodes above. However, by the configuration of the first conducting structure 278 and the second conducting structure 280 as described above, the circuit shown in FIG. 2B can be formed, which is equivalent to the circuit shown in FIG. 2C.

A method of manufacturing a sensing unit according to an embodiment includes the following steps. First, a gate is formed on a substrate. An insulating material layer is formed on the substrate. The insulating material layer includes a first insulating layer and a gate insulating layer connected to the first insulating layer. The gate insulation layer covers the gate. A channel layer is formed on the gate insulating layer. A first patterned conductive layer is formed on the first insulating layer and the gate insulating layer. The first patterned conductive layer includes a source electrode, a drain electrode, a first lower electrode, and a second lower electrode. The source electrode and the drain electrode are correspondingly disposed on two sides of the channel layer. A sensing layer is formed on the first lower electrode, and a semiconductor layer is formed on the second lower electrode. A second insulating layer is formed on the first patterned conductive layer. A second patterned conductive layer is formed on the sensing layer and the semiconductor layer. The second patterned conductive layer includes a first upper electrode formed on the sensing layer and a second upper electrode formed on the semiconductor layer. A third insulating layer is formed on the first upper electrode and the second upper electrode. A third lower electrode is formed on the third insulating layer. A light emitting layer is formed on the third lower electrode. A fourth insulating layer is formed on the third insulating layer. Next, a third upper electrode is formed on the light emitting layer. The fourth insulating layer is located between the third lower electrode and the third upper electrode. The gate, gate insulating layer, channel layer, source, and drain constitute a reading element; the first lower electrode, the sensing layer, and the first upper electrode constitute a photosensitive element; the second lower electrode, the semiconductor layer, and the second The upper electrode constitutes a diode element; the third lower electrode, the light-emitting layer, and the third upper electrode constitute a light-emitting element; wherein the light-emitting element is correspondingly disposed above the photosensitive element. Light-emitting element system Corresponding to the position above the photosensitive element. The anode of the second lower electrode and the second upper electrode of the diode element is electrically connected to the cathode of the third lower electrode and the third upper electrode of the light emitting element, and Among the second lower electrode and the second upper electrode of the polar element, the one serving as the cathode is electrically coupled to both the third lower electrode and the third upper electrode of the light emitting element serving as the anode. Where possible, the order of these steps can be reversed, combined with each other, or other adjustments can be made, and other steps can be added.

Please refer to FIGS. 3A to 3D, which illustrate a manufacturing method of a sensing unit according to an embodiment of the present invention, which is used to manufacture the sensing unit 100 as shown in FIG. 1A. As shown in FIG. 3A, first, the gate 106 of the reading element 104 is formed on the substrate 102. In one embodiment, the light shielding layer 114 can be formed in the same steps. An insulating material layer 116 is formed on the substrate 102. The insulating material layer 116 includes a gate insulating layer 116a and a first insulating layer 116b. The gate insulating layer 116a and the first insulating layer 116b are connected to each other. The gate insulating layer 116 a covers the gate 106. The first insulating layer 116b covers the light shielding layer 114. A channel layer 108 is formed on the gate insulating layer 116a.

A first patterned conductive layer 190 is formed on the gate insulating layer 116a and the first insulating layer 116b. The first patterned conductive layer 190 includes a source electrode 110, a drain electrode 112, a first lower electrode 120 of the photosensitive element 118, and a second lower electrode 134 of the diode element 132. The first patterned conductive layer 190 may be formed of an opaque conductive material such as a metal or the like. A sensing layer 122 is formed on the first lower electrode 120, and a semiconductor layer 136 of the diode element 132 is formed on the second lower electrode 134. Specifically, in an embodiment, the first lower electrode 120 and the second lower electrode 134 may be performed by the same steps. P-type material layers 124 and 138 are formed on top of each other, essential material layers 126 and 140 are formed on p-type material layers 124 and 138, respectively, and n-type material layers 128 and 142 are formed on essential material layers 126 and 140, respectively. A second insulating layer 148 is formed on the first patterned conductive layer 190.

A second patterned conductive layer 192 is formed on the sensing layer 122 and the semiconductor layer 136 of the diode element 132. The second patterned conductive layer 192 includes a first upper electrode 130 of the photosensitive element 118 and a second upper electrode 144 of the diode element 132. The second patterned conductive layer 192 may be formed of a transparent conductive material such as indium tin oxide. According to an embodiment, a first via hole 170 may be formed in the second insulating layer 148 to expose the second lower electrode 134. In addition, a first connection electrode 182 is formed in the first via hole 170. In one embodiment, the first connection electrode 182 may be formed by a step of forming a second patterned conductive layer 192.

As shown in FIG. 3B, a third insulating layer 150 is formed on the first upper electrode 130 and the second upper electrode 144. According to an embodiment, a second via hole 172 and a third via hole 174 may be formed in the third insulating layer 150. The second via hole 172 exposes the first connection electrode 182, and the third via hole 174 exposes the second upper electrode 144.

As shown in FIG. 3C, a third lower electrode 154 of the light-emitting element 152 is formed on the third insulating layer 150. According to an embodiment, a second connection electrode 184 may be formed in the second via hole 172 to be electrically connected to the first connection electrode 182, and the third lower electrode 154 of the light-emitting element 152 is electrically connected to the second connection electrode 184. . According to an embodiment, a third connection electrode 186 may be formed in the third via 174 to communicate with the second upper electrode. 144 electrical connection. In one embodiment, the second connection electrode 184 and the third connection electrode 186 may be formed by the step of forming the third lower electrode 154.

As shown in FIG. 3D, a fourth insulating layer 166 is formed on the third insulating layer 150. A light-emitting layer 156 of the light-emitting element 152 is formed on the third lower electrode 154 of the light-emitting element 152. Specifically, in an embodiment, an n-type material layer 158, an essential material layer 160, and a p-type material layer 162 may be sequentially formed on the third lower electrode 154. A third upper electrode 164 of the light emitting element 152 is formed on the light emitting layer 156 of the light emitting element 152. The fourth insulating layer 166 is located between the third lower electrode 154 and the third upper electrode 164. The light emitting element 152 is disposed above the light receiving element 118 correspondingly. According to an embodiment, a fourth via hole 176 may be formed in the fourth insulating layer 166 to expose the third connection electrode 186. In addition, a fourth connection electrode 188 can be formed in the fourth via hole 176. The fourth connection electrode 188 is electrically connected to the third connection electrode 186 and the third upper electrode 164 of the light-emitting element 152. In one embodiment, the fourth connection electrode 188 may be formed by the step of forming the third upper electrode 164. Thereafter, an encapsulation layer 168 may be formed.

In this embodiment, the first connection electrode 182 and the second connection electrode 184 constitute a first conductive structure 178. Through the first conductive structure 178, the second lower electrode 134 serving as the anode of the diode element 132 can be electrically connected to the third lower electrode 154 serving as the cathode of the light-emitting element 152. The third connection electrode 186 and the fourth connection electrode 188 constitute a second conductive structure 180. Through the second conducting structure 180, the second upper electrode 144 serving as the cathode of the diode element 132 can be electrically connected to the third upper electrode 164 serving as the anode of the light emitting element 152.

Please refer to FIGS. 4A to 4D, which illustrate a manufacturing method of a sensing unit according to another embodiment of the present invention, which is used to manufacture the sensing unit 200 shown in FIG. 2A. In the following, only the differences between this manufacturing method and those shown in FIGS. 3A to 3D will be described, and other details will not be repeated. As shown in FIG. 4A, in order to realize the polarity inversion between the light-emitting element 252 and the diode element 232 in the sensing unit 200 shown in FIG. 2A in parallel with the opposite polarity, and to connect the second lower electrode 234 with Compared with the position of the first conducting structure 278, the position of the diode element 232 is closer to the light receiving element 118. Specifically, the first patterned conductive layer 290 includes a source 110, a drain 112, a first lower electrode 120 of the photosensitive element 118, and a second lower electrode 234 of the diode element 232. The first patterned conductive layer 190 may be formed of an opaque conductive material such as a metal or the like. A sensing layer 122 is formed on the first lower electrode 120, and a semiconductor layer 236 of the diode element 232 is formed on the second lower electrode 234. Similar to the foregoing manner, in one embodiment, the film layers of the sensing layer 122 and the semiconductor layer 236 can be formed by the same steps. Next, a second patterned conductive layer 292 is formed on the sensing layer 122 and the semiconductor layer 236. The second patterned conductive layer 292 includes the first upper electrode 130 of the photosensitive element 118 and the second upper electrode of the diode element 232. 244 and the first connection electrode 282.

Regarding the conducting structure, as shown in FIG. 4A, a first via hole 270 may be formed in the second insulating layer 248 to expose the second lower electrode 234. In addition, a first connection electrode 282 is formed in the first via hole 270. As shown in FIG. 4B, a second via 272 and a third via 274 are formed in the third insulating layer 250. The second via hole 272 exposes the first connection electrode 282. The third via hole 274 exposes the second upper electrode 244. As shown in FIG. 4C, a second connection electrode 284 may be formed in the second via hole 272 to communicate with the first The connection electrode 282 is electrically connected. In addition, a third connection electrode 286 may be formed in the third via hole 274 to be electrically connected to the second upper electrode 244. The third lower electrode 254 of the light-emitting element 252 is electrically connected to the third connection electrode 286. A fourth via 276 may be formed in the fourth insulating layer 266 to expose the second connection electrode 284. As shown in FIG. 4D, a fourth connection electrode 288 is formed in the fourth via hole 276. The fourth connection electrode 288 is electrically connected to the second connection electrode 284 and the third upper electrode 264 of the light-emitting element 252.

In this embodiment, the first connection electrode 282, the second connection electrode 284, and the fourth connection electrode 288 constitute a first conductive structure 278. Through the first conducting structure 278, the second lower electrode 234 serving as the anode of the diode element 232 can be electrically connected to the third upper electrode 264 serving as the cathode of the light emitting element 252. The third connection electrode 286 constitutes a second conductive structure 280. Through the second conducting structure 280, the second upper electrode 244 serving as the cathode of the diode element 232 can be electrically connected to the third lower electrode 254 serving as the anode of the light emitting element 252.

In the embodiment of the present invention, by disposing the diode element on the same layer as the photosensitive element, the manufacturing processes of the diode element and the photosensitive element can be integrated, and the same patterned film can be used in the same steps. The layers form a diode element and a photosensitive element. Therefore, the structure and process can be greatly simplified, and cost and process time can be saved. Furthermore, since the diode element and the light-emitting element are connected in parallel with the opposite polarity through the conduction structure, the diode element and the light-emitting element can be structurally stacked in any desired manner, and then the conduction structure is used. Adjustment to maintain parallel connections of opposite polarity. This allows for flexibility in the process without affecting the function of the guided sensing unit.

In summary, although the present invention has been disclosed as above with the embodiments, it is not intended to limit the present invention. Those with ordinary knowledge in the technical field to which the present invention pertains can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be determined by the scope of the attached patent application.

Claims (13)

A sensing unit includes: a substrate; a reading element on the substrate; a first insulating layer on the substrate; a photosensitive element disposed on the first insulating layer, the photosensitive element including A first lower electrode, a sensing layer, and a first upper electrode. The first lower electrode is located on the first insulating layer and is electrically connected to the reading element. The sensing layer is located on the first lower electrode. The first upper electrode is located on the sensing layer; a diode element is disposed on the first insulating layer, the diode element includes a second lower electrode, a semiconductor layer, and a second upper electrode, The second lower electrode is located on the first insulating layer, the semiconductor layer is located on the second lower electrode, and the second upper electrode is located on the semiconductor layer; a protective layer is provided on the reading element, the photosensitive element, and On the diode element; and a light emitting element disposed above the protective layer, the light emitting element includes a third lower electrode, a light emitting layer and a third upper electrode, the light emitting layer is located on the third lower electrode, The third upper electrode is located on the light emitting layer ; Wherein the anode of the second lower electrode and the second upper electrode of the diode element is electrically coupled to the third lower electrode and the third upper electrode of the light emitting element. Among them, a cathode, and a cathode between the second lower electrode and the second upper electrode of the diode element are electrically coupled to the third lower electrode and the light emitting element. The third upper electrode serves as the anode. The sensing unit described in item 1 of the patent application scope further includes a first conducting structure and a second conducting structure, wherein the second lower electrode of the diode element is electrically connected by the first conducting structure. To the third lower electrode of the light emitting element, the second upper electrode of the diode element is electrically connected to the third upper electrode of the light emitting element through the second conducting structure. The sensing unit described in item 1 of the patent application scope further includes a first conducting structure and a second conducting structure, wherein the second lower electrode of the diode element is electrically connected by the first conducting structure. To the third upper electrode of the light emitting element, the second upper electrode of the diode element is electrically connected to the third lower electrode of the light emitting element through the second conducting structure. The sensing unit according to item 1 of the scope of patent application, wherein: the reading element includes a gate, a gate insulating layer, a channel layer, a source and a drain, and the gate insulating layer is disposed on The gate electrode is connected to the first insulating layer, the channel layer is disposed corresponding to the gate electrode, the source electrode and the drain electrode are disposed on both sides of the channel layer, and the drain electrode is electrically connected to the first lower electrode. And the protective layer includes a second insulating layer and a third insulating layer, wherein the second insulating layer is disposed on the first insulating layer and covers the reading element, a portion of the first lower electrode, and A portion of the second lower electrode and the third insulating layer are disposed on the first upper electrode and a portion of the second upper electrode, and the third lower electrode of the light-emitting element is located on the third insulating layer. . The sensing unit according to item 4 of the scope of patent application, further comprising a fourth insulating layer disposed on the third lower electrode of the light emitting element, and the third upper electrode of the light emitting element is located on the third Four insulation layers. The sensing unit described in item 5 of the patent application scope further includes a first conducting structure and a second conducting structure, wherein the second insulating layer has a first via hole and the third insulating layer has a A second via hole and a third via hole, the fourth insulating layer has a fourth via hole; the first via structure is located between the first via hole and the second via hole, and the second via structure is located in the Among the third via and the fourth via; and the second lower electrode of the diode element is electrically connected to the third lower electrode of the light emitting element through the first conducting structure, the diode The second upper electrode of the element is electrically connected to the third upper electrode of the light emitting element through the second conducting structure. The sensing unit according to item 5 of the patent application scope further includes a first conducting structure and a second conducting structure, wherein the second insulating layer has a first via hole, and the third insulating layer has a first conducting hole. Two vias and a third via, the fourth insulating layer has a fourth via; the first conductive structure is located in the first via, the second via, and the fourth via, and the first via is A two-conducting structure is located in the third via; and the second lower electrode of the diode element is electrically connected to the third upper electrode of the light-emitting element through the first conducting structure, the diode element The second upper electrode is electrically connected to the third lower electrode of the light emitting element through the second conducting structure. The sensing unit described in item 1 of the patent application scope further includes a packaging layer disposed on the light emitting element. The sensing unit according to item 1 of the patent application scope, wherein the first lower electrode of the photosensitive element and the second lower electrode of the diode element are formed of the same patterned film layer. The sensing layer and the semiconductor layer of the diode element are formed by the same patterned film layer, and the first upper electrode of the photosensitive element and the second upper electrode of the diode element are formed by the same pattern. The film is formed. The sensing unit according to item 1 of the patent application scope further includes a light-shielding layer, which is located on the substrate and covered by the first insulating layer, and is disposed below the photosensitive element. A method for manufacturing a sensing unit includes: forming a gate on a substrate; and forming an insulating material layer on the substrate, wherein the insulating material layer includes a first insulating layer and a first insulating layer connected to the first insulating layer. A gate insulating layer covering the gate; forming a channel layer on the gate insulating layer; forming a first patterned conductive layer on the first insulating layer and the gate insulating layer; The first patterned conductive layer includes a source electrode, a drain electrode, a first lower electrode, and a second lower electrode, wherein the source electrode and the drain electrode are correspondingly disposed on both sides of the channel layer; A sensing layer is formed on the electrode, and a semiconductor layer is formed on the second lower electrode; a second insulating layer is formed on the first patterned conductive layer; a first layer is formed on the sensing layer and the semiconductor layer. Two patterned conductive layers, the second patterned conductive layer includes a first upper electrode formed on the sensing layer and a second upper electrode formed on the semiconductor layer; the first upper electrode and the first upper electrode A third insulating layer is formed on the two upper electrodes; A third lower electrode is formed on the third insulating layer; a light emitting layer is formed on the third lower electrode; a fourth insulating layer is formed on the third insulating layer; and a third upper electrode is formed on the light emitting layer. The fourth insulating layer is located between the third lower electrode and the third upper electrode, wherein the first lower electrode, the sensing layer and the first upper electrode constitute a photosensitive element, the second lower electrode, the The semiconductor layer and the second upper electrode constitute a diode element, the third lower electrode, the light emitting layer, and the third upper electrode constitute a light emitting element, and the light emitting element is correspondingly disposed above the photosensitive element; The anode of the second lower electrode and the second upper electrode of the diode element is electrically coupled to both the third lower electrode and the third upper electrode of the light emitting element. As the cathode, and as the cathode among the second lower electrode and the second upper electrode of the diode element, are electrically coupled to the third lower electrode and the third of the light emitting element The upper electrode acts as the anode. The manufacturing method according to item 11 of the scope of patent application, further comprising: forming a first via hole in the second insulating layer to expose the second lower electrode; and forming a first connection electrode in the first via hole Medium; forming a second via hole and a third via hole in the third insulating layer, the second via hole exposing the first connection electrode, and the third via hole exposing the second upper electrode; forming a A second connection electrode is electrically connected to the first connection electrode in the second via hole, wherein the third lower electrode is electrically connected to the second connection electrode; a third connection electrode is formed in the third via hole. The middle Israel is electrically connected with the second upper electrode; a fourth via hole is formed in the fourth insulating layer to expose the third connection electrode; and a fourth connection electrode is formed in the fourth via hole, the The fourth connection electrode is electrically connected to the third connection electrode and the third upper electrode. The manufacturing method according to item 11 of the scope of patent application, further comprising: forming a first via hole in the second insulating layer to expose the second lower electrode; and forming a first connection electrode in the first via hole Medium; forming a second via hole and a third via hole in the third insulating layer, the second via hole exposing the first connection electrode, and the third via hole exposing the second upper electrode; forming a A second connection electrode is electrically connected to the first connection electrode in the second via hole; a third connection electrode is formed in the third via hole to be electrically connected to the second upper electrode, wherein the third A lower electrode is electrically connected to the third connection electrode; a fourth via hole is formed in the fourth insulating layer to expose the second connection electrode; and a fourth connection electrode is formed in the fourth via hole, the The fourth connection electrode is electrically connected to the second connection electrode and the third upper electrode.