TWI777742B - Fingerprint recognition device - Google Patents

Fingerprint recognition device Download PDF

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TWI777742B
TWI777742B TW110131173A TW110131173A TWI777742B TW I777742 B TWI777742 B TW I777742B TW 110131173 A TW110131173 A TW 110131173A TW 110131173 A TW110131173 A TW 110131173A TW I777742 B TWI777742 B TW I777742B
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Taiwan
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light
layer
micromirror
identification device
fingerprint identification
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TW110131173A
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Chinese (zh)
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TW202247032A (en
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謝尚瑋
劉耿瑜
丘兆仟
陳彥良
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友達光電股份有限公司
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Priority to US17/513,886 priority Critical patent/US11574496B2/en
Priority to CN202210030607.9A priority patent/CN114387631A/en
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Publication of TWI777742B publication Critical patent/TWI777742B/en
Publication of TW202247032A publication Critical patent/TW202247032A/en

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Abstract

A fingerprint recognition device including a light emitting layer, an image sensing layer and a micro-lens layer is provided. The image sensing layer has a plurality of pixels. The micro-lens layer is disposed between the light emitting layer and the image sensing layer and has a plurality of micro lenses respectively corresponding to the pixels. A distance from the micro-lens layer to the light emitting layer is smaller than or equal to 800 um and larger than or equal to h1, wherein h1=x/2×tanθ, x is the smallest distance between two micro lenses respectively corresponding to different pixels on the plane where the micro-lens layer is disposed, and θ is the light receiving angle for FWHM.

Description

指紋辨識裝置Fingerprint Identification Device

本發明是有關於一種光學感測裝置，且特別是有關於一種指紋辨識裝置。The present invention relates to an optical sensing device, and more particularly, to a fingerprint identification device.

屏下式指紋辨識感測器所偵測的指紋訊號是透過自發光面板的透光區傳遞到下方，經由其下方的微鏡層收集後，再入射感測器。由於各微鏡的收光角是固定的，自發光面板與微鏡層之間需要維持適當的距離，以避免亮暗不均的問題。除此之外，還需要優化各微鏡的收光角，以避免串音。然而，由於優化後的收光角的角度範圍較小，使得感測器對自發光面板與微鏡層之間的距離變得敏感，若兩者的距離設置不當，可能發生亮暗不均的問題。The fingerprint signal detected by the under-screen fingerprint recognition sensor is transmitted to the bottom through the light-transmitting area of the self-luminous panel, collected by the micromirror layer below it, and then incident on the sensor. Since the light-receiving angle of each micromirror is fixed, a proper distance needs to be maintained between the self-luminous panel and the micromirror layer to avoid the problem of uneven brightness and darkness. In addition, it is also necessary to optimize the light receiving angle of each micromirror to avoid crosstalk. However, due to the small angular range of the optimized light-receiving angle, the sensor becomes sensitive to the distance between the self-luminous panel and the micromirror layer. If the distance between the two is not properly set, uneven brightness and darkness may occur. question.

本發明提供一種指紋辨識裝置，避免了串音以及亮暗不均的問題。The present invention provides a fingerprint identification device, which avoids the problems of crosstalk and uneven brightness.

根據本發明一實施例，提供一種指紋辨識裝置，包括發光層、影像感測層以及微鏡層。影像感測層具備多個像素。微鏡層設置於發光層以及影像感測層之間，且具備與這些像素分別對應的多個微鏡。微鏡層與發光層之間的距離小於或等於800 um，且大於或等於h1，h1=x/2×tanθ，x為對應不同像素的微鏡在微鏡層所在平面上的最小間隔距離，θ為每一微鏡的收光半高寬角。According to an embodiment of the present invention, a fingerprint identification device is provided, which includes a light emitting layer, an image sensing layer, and a micromirror layer. The image sensing layer has a plurality of pixels. The micromirror layer is disposed between the light emitting layer and the image sensing layer, and has a plurality of micromirrors corresponding to the pixels respectively. The distance between the micromirror layer and the light-emitting layer is less than or equal to 800 um, and greater than or equal to h1, h1=x/2×tanθ, x is the minimum separation distance of the micromirrors corresponding to different pixels on the plane where the micromirror layer is located, θ is the light receiving half-height angle of each micromirror.

基於上述，本發明實施例提供的指紋辨識裝置以微鏡的收光角以及微鏡之間的距離來限定微鏡層與發光層之間的最小距離，避免兩者距離不足而產生亮暗不均的問題。Based on the above, the fingerprint identification device provided by the embodiment of the present invention uses the light-receiving angle of the micromirrors and the distance between the micromirrors to limit the minimum distance between the micromirror layer and the light emitting layer, so as to avoid the brightness and darkness caused by insufficient distance between the two. average problem.

為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more obvious and easy to understand, the following embodiments are given and described in detail with the accompanying drawings as follows.

參照圖1A、圖1B及圖1C，圖1A所示的橫截面對應圖1B中的線段AA’，圖1C所示的橫截面對應圖1B中的線段BB’。1A , 1B and 1C, the cross section shown in FIG. 1A corresponds to the line segment AA' in FIG. 1B , and the cross section shown in FIG. 1C corresponds to the line segment BB' in FIG. 1B .

根據本實施例提供的指紋辨識裝置1包括影像檢測部100及影像產生部200。影像產生部200包括發光層201及透光蓋板202，影像檢測部100包括微鏡層101以及影像感測層103。微鏡層101設置於發光層201以及影像感測層103之間。影像感測層103具備多個像素。The fingerprint identification device 1 provided according to this embodiment includes an image detection unit 100 and an image generation unit 200 . The image generating unit 200 includes a light-emitting layer 201 and a light-transmitting cover plate 202 , and the image detecting unit 100 includes a micromirror layer 101 and an image sensing layer 103 . The micromirror layer 101 is disposed between the light emitting layer 201 and the image sensing layer 103 . The image sensing layer 103 includes a plurality of pixels.

在本實施例中，示例地繪示了影像感測層103的四個像素P1、P2、P3及P4。微鏡層101具備與像素P1、P2、P3及P4分別對應的多個微鏡，如圖1B所示。同時參照圖1A及圖1B，微鏡M1對應像素P1，微鏡M3對應像素P2，偽微鏡（dummy lens）M2設置於微鏡M1與M3之間且對應像素P2。如圖1B所示，像素P1、P2、P3及P4皆對應多個微鏡，與微鏡M1及M3以相同的方式繪示，且像素P1、P2、P3及P4皆對應多個偽微鏡，與偽微鏡M2以相同的方式繪示。In this embodiment, four pixels P1 , P2 , P3 and P4 of the image sensing layer 103 are exemplarily shown. The micromirror layer 101 includes a plurality of micromirrors corresponding to the pixels P1 , P2 , P3 and P4 respectively, as shown in FIG. 1B . Referring to FIGS. 1A and 1B at the same time, the micromirror M1 corresponds to the pixel P1 , the micromirror M3 corresponds to the pixel P2 , and the dummy lens M2 is disposed between the micromirrors M1 and M3 and corresponds to the pixel P2 . As shown in FIG. 1B , the pixels P1 , P2 , P3 and P4 all correspond to a plurality of micromirrors, which are shown in the same manner as the micromirrors M1 and M3 , and the pixels P1 , P2 , P3 and P4 all correspond to a plurality of pseudo micromirrors , shown in the same manner as the pseudo-micromirror M2.

在本實施例中，發光層201是自發光顯示面板，包括顯示介質層201P及電路層201C，且具備透光區201T以及不透光區201B。不透光區201B對應電路層201C中設置有電路走線的區域，透光區201T對應電路層201C中未設置電路走線的區域。發光層201發出的光線照射透光蓋板202上的使用者手指，光線被手指反射後，透射透光區201T並朝影像檢測部100行進。In this embodiment, the light-emitting layer 201 is a self-luminous display panel, including a display medium layer 201P and a circuit layer 201C, and has a light-transmitting area 201T and an opaque area 201B. The opaque area 201B corresponds to an area in the circuit layer 201C where circuit traces are provided, and the translucent area 201T corresponds to an area in the circuit layer 201C where no circuit traces are provided. The light emitted by the light-emitting layer 201 illuminates the user's finger on the light-transmitting cover plate 202 , and after being reflected by the finger, the light is transmitted through the light-transmitting area 201T and travels toward the image detection unit 100 .

參照圖1A，微鏡M1及M3分別對應於不同的像素P1及P2，其收光半高寬角皆為θ，其中，收光半高寬角是指收光亮度為正視角（即θ=0）收光亮度的一半時的角度。影像檢測部100及影像產生部200之間的距離為H1。如圖1A所示，微鏡M1及M3分別對應不同像素P1及P2，且微鏡M1及M3的收光半高寬角皆對應了透光區201T。1A , the micromirrors M1 and M3 correspond to different pixels P1 and P2 respectively, and their light-receiving half-height and wide-angles are all θ, wherein the light-receiving half-height wide angle means that the light-receiving brightness is a positive viewing angle (that is, θ= 0) The angle at which half the brightness is received. The distance between the image detection unit 100 and the image generation unit 200 is H1. As shown in FIG. 1A , the micromirrors M1 and M3 correspond to different pixels P1 and P2 respectively, and the light-receiving half-height and wide angles of the micromirrors M1 and M3 both correspond to the light-transmitting area 201T.

請先參照圖2，其繪示根據一比較例的指紋辨識裝置的示意圖。為了便於描述，比較例的指紋辨識裝置2具備影像檢測部100A及影像產生部200B，且影像檢測部100A及影像產生部200A的配置類似於圖1A所示的實施例中的影像檢測部100及影像產生部200。圖1A及圖2所示的兩實施例的不同僅在於，影像檢測部100A及影像產生部200A之間的距離為H2，且H2小於H1。Please refer to FIG. 2 first, which is a schematic diagram of a fingerprint identification device according to a comparative example. For convenience of description, the fingerprint recognition device 2 of the comparative example includes an image detection unit 100A and an image generation unit 200B, and the configurations of the image detection unit 100A and the image generation unit 200A are similar to the image detection unit 100 and the image generation unit 200A in the embodiment shown in FIG. 1A . The video generation unit 200 . The only difference between the two embodiments shown in FIG. 1A and FIG. 2 is that the distance between the image detection unit 100A and the image generation unit 200A is H2 , and H2 is smaller than H1 .

比較圖1A及圖2。在圖2中，由於影像檢測部100A及影像產生部200A之間的距離過小，對應不同像素P1及P2的微鏡M1及M3未同時對應透光區201T，兩者的收光半高寬角在空間上未相互接續。在圖2所示的情況下，可能造成像素P1及P2所感測的光線亮暗不均的問題。相對地，可以看到，在圖1A中，透過適當配置影像檢測部100及影像產生部200之間的距離，可以讓對應不同像素P1及P2的微鏡M1及M3的收光半高寬角皆對應透光區201T，且兩者的收光半高寬角在空間上相互接續。Compare FIGS. 1A and 2 . In FIG. 2 , because the distance between the image detection part 100A and the image generation part 200A is too small, the micromirrors M1 and M3 corresponding to different pixels P1 and P2 do not correspond to the light transmission area 201T at the same time, and the light receiving half-height wide angle of the two They are not spatially connected to each other. In the case shown in FIG. 2 , the problem of uneven brightness and darkness of the light sensed by the pixels P1 and P2 may be caused. Relatively, it can be seen that in FIG. 1A , by appropriately configuring the distance between the image detection unit 100 and the image generation unit 200 , the light-receiving half-height wide angle of the micromirrors M1 and M3 corresponding to different pixels P1 and P2 can be made Both correspond to the light-transmitting area 201T, and the light-receiving half-height and wide-angle of the two are spatially connected to each other.

具體而言，圖1A所示實施例的微鏡層101與發光層201之間的距離H1被設置為小於或等於800 um，且大於或等於h1，h1=x/2×tanθ，x為對應不同像素的微鏡在微鏡層所在平面上的最小間隔距離，θ為每一微鏡的收光半高寬角。參照圖1A及圖1B，微鏡M1及M3在微鏡層101所在平面上的距離即是本實施例中對應不同像素的微鏡的最小間隔距離x。Specifically, the distance H1 between the micromirror layer 101 and the light-emitting layer 201 in the embodiment shown in FIG. 1A is set to be less than or equal to 800 μm, and greater than or equal to h1, h1=x/2×tanθ, x is the corresponding The minimum separation distance between the micromirrors of different pixels on the plane where the micromirror layer is located, θ is the light-receiving half-height wide angle of each micromirror. Referring to FIG. 1A and FIG. 1B , the distance between the micromirrors M1 and M3 on the plane where the micromirror layer 101 is located is the minimum separation distance x of the micromirrors corresponding to different pixels in this embodiment.

參照圖1C，影像檢測部100還包括準直層102，設置於影像感測層103與微鏡層101之間，其中準直層102包括遮光層SL1及SL2以及多個透光孔PH，且這些透光孔PH分別對應微鏡M4及M5。偽微鏡M6及M7則不與這些透光孔PH相對應，且偽透鏡M6及M7未對應光電二極體PD。1C , the image detection unit 100 further includes a collimation layer 102 disposed between the image sensing layer 103 and the micromirror layer 101 , wherein the collimation layer 102 includes light shielding layers SL1 and SL2 and a plurality of light transmission holes PH, and These light-transmitting holes PH correspond to the micromirrors M4 and M5 respectively. The dummy micromirrors M6 and M7 do not correspond to these light-transmitting holes PH, and the dummy lenses M6 and M7 do not correspond to the photodiodes PD.

在本實施例中，偽微鏡M6及M7完全不與透光孔PH相對應，且微鏡M4及M5皆對應兩個透光孔PH，但本發明不以此為限。在其他實施例中，偽微鏡M6及M7可以分別對應一個透光孔PH。具體而言，偽微鏡M2、M6及M7所對應的透光孔PH的數量小於微鏡M1、M3、M4及M5所對應的透光孔PH的數量。In this embodiment, the dummy micromirrors M6 and M7 do not correspond to the light-transmitting holes PH at all, and both the micromirrors M4 and M5 correspond to two light-transmitting holes PH, but the present invention is not limited to this. In other embodiments, the dummy micromirrors M6 and M7 may respectively correspond to one light transmission hole PH. Specifically, the number of the light-transmitting holes PH corresponding to the dummy micromirrors M2, M6 and M7 is smaller than the number of the light-transmitting holes PH corresponding to the micromirrors M1, M3, M4 and M5.

為了充分說明本發明的各種實施態樣，將在下文描述本發明的其他實施例。在此必須說明的是，下述實施例沿用前述實施例的元件標號與部分內容，其中採用相同的標號來表示相同或近似的元件，並且省略了相同技術內容的說明。關於省略部分的說明可參考前述實施例，下述實施例不再重複贅述。In order to fully illustrate the various embodiments of the present invention, other embodiments of the present invention will be described below. It must be noted here that the following embodiments use the element numbers and part of the contents of the previous embodiments, wherein the same numbers are used to represent the same or similar elements, and the description of the same technical contents is omitted. For the description of the omitted part, reference may be made to the foregoing embodiments, which will not be repeated in the following embodiments.

參照圖3，其繪示根據本發明一實施例的指紋辨識裝置的示意圖。指紋辨識裝置3包括影像檢測部100、影像產生部200以及支撐框301。支撐框301設置於影像檢測部100以及影像產生部200之間，也就是微鏡層101與發光層201之間，其中支撐框301的楊氏模量大於或等於1 MPa。在本實施例中，由於支撐框301具備大的楊氏模量，其響應於應力所產生的應變小。因此，當指紋辨識裝置3被施加應力，影像檢測部100與影像產生部200之間的距離不會因為外加的應力而改變。影像檢測部100與影像產生部200之間的距離可以與上述圖1A至圖1C所述實施例的距離H1相同，小於或等於800 um，且大於或等於h1，h1=x/2×tanθ，x為對應不同像素的微鏡在微鏡層所在平面上的最小間隔距離，θ為每一微鏡的收光半高寬角。Referring to FIG. 3 , a schematic diagram of a fingerprint identification device according to an embodiment of the present invention is shown. The fingerprint identification device 3 includes an image detection unit 100 , an image generation unit 200 and a support frame 301 . The support frame 301 is disposed between the image detection part 100 and the image generation part 200 , that is, between the micromirror layer 101 and the light emitting layer 201 , wherein the Young's modulus of the support frame 301 is greater than or equal to 1 MPa. In this embodiment, since the support frame 301 has a large Young's modulus, the strain generated in response to the stress is small. Therefore, when the fingerprint identification device 3 is subjected to stress, the distance between the image detection part 100 and the image generation part 200 will not change due to the applied stress. The distance between the image detection unit 100 and the image generation unit 200 may be the same as the distance H1 in the embodiments described in FIG. 1A to FIG. 1C , less than or equal to 800 μm, and greater than or equal to h1, h1=x/2×tanθ, x is the minimum separation distance of the micromirrors corresponding to different pixels on the plane where the micromirror layer is located, and θ is the light-receiving half-height wide angle of each micromirror.

相對地，參照圖4，其繪示根據本發明一實施例的指紋辨識裝置的示意圖。指紋辨識裝置4包括影像檢測部100、影像產生部200以及支撐框401。支撐框401設置於影像檢測部100以及影像產生部200之間，其中支撐框401的楊氏模量小於1 MPa。在本實施例中，由於支撐框401具備小的楊氏模量，其響應於應力所產生的應變大。因此，當指紋辨識裝置4被施加應力，影像檢測部100與影像產生部200之間的距離因外加的應力而縮小，如圖4下半部所繪示。In contrast, referring to FIG. 4 , which is a schematic diagram of a fingerprint identification device according to an embodiment of the present invention. The fingerprint identification device 4 includes an image detection unit 100 , an image generation unit 200 and a support frame 401 . The support frame 401 is disposed between the image detection unit 100 and the image generation unit 200 , wherein the Young's modulus of the support frame 401 is less than 1 MPa. In this embodiment, since the support frame 401 has a small Young's modulus, the strain generated in response to the stress is large. Therefore, when the fingerprint identification device 4 is subjected to stress, the distance between the image detection part 100 and the image generation part 200 is reduced due to the applied stress, as shown in the lower part of FIG. 4 .

再參照圖5，其繪示根據本發明一實施例的指紋辨識裝置的示意圖。指紋辨識裝置5包括影像檢測部100、影像產生部200、支撐框501以及底板502。支撐框501設置於影像檢測部100以及影像產生部200之間，影像檢測部100設置於底板502以及影像產生部200之間。由於影像檢測部100抵設於底板502上，當指紋辨識裝置5被施加應力，影像檢測部100與影像產生部200之間的距離因外加的應力而縮小，如圖5下半部所繪示。Referring to FIG. 5 again, it is a schematic diagram of a fingerprint identification device according to an embodiment of the present invention. The fingerprint identification device 5 includes an image detection unit 100 , an image generation unit 200 , a support frame 501 and a base plate 502 . The support frame 501 is arranged between the image detection unit 100 and the image generation unit 200 , and the image detection unit 100 is arranged between the base plate 502 and the image generation unit 200 . Since the image detection part 100 is abutted on the bottom plate 502 , when the fingerprint identification device 5 is subjected to stress, the distance between the image detection part 100 and the image generation part 200 is reduced due to the applied stress, as shown in the lower part of FIG. 5 . .

具體而言，在圖4及圖5所示的實施例中，影像檢測部100與影像產生部200之間的距離會因為外加應力而縮小，在這樣的情況下，影像檢測部100與影像產生部200之間的距離必須大於上述圖1A至圖1C所述實施例的距離H1，以下述圖6所示的實施例來說明。Specifically, in the embodiments shown in FIGS. 4 and 5 , the distance between the image detection unit 100 and the image generation unit 200 is reduced due to the applied stress. In this case, the image detection unit 100 and the image generation unit 200 are The distance between the parts 200 must be greater than the distance H1 in the above-mentioned embodiment shown in FIG. 1A to FIG. 1C , which is illustrated by the following embodiment shown in FIG. 6 .

考慮上述應力造成影像檢測部100與影像產生部200之間的距離縮小的狀況，請參照圖6，其繪示根據本發明一實施例的指紋辨識裝置的橫截面示意圖。指紋辨識裝置6包括影像檢測部100及影像產生部200，其中影像產生部200包括透光蓋板202，微鏡層101與發光層201之間的距離H3被設置為小於或等於800 um，且大於或等於h1+h2，其中h1=x/2×tanθ，h2=6.045E -7×N×L 2/t 3，x為對應不同像素的微鏡在微鏡層所在平面上的最小間隔距離（即圖6中微鏡M1及M3在微鏡層101所在平面上的距離），θ為每一微鏡的收光半高寬角，N為指紋辨識裝置6的中心點的力（牛頓），L為透光蓋板202的在其所在平面上的最大尺寸，即透光蓋板202的對角線長度（mm），t為透光蓋板202以及發光層201的總厚度（mm）。舉例來說，當施加6牛頓的力於指紋辨識裝置6的中心點，則H3小於或等於800 um，且大於或等於h1+h2，其中h1=x/2×tanθ，h2=3.627E -6×L 2/t 3。 Considering the situation that the distance between the image detection part 100 and the image generation part 200 is reduced due to the above stress, please refer to FIG. 6 , which is a schematic cross-sectional view of a fingerprint identification device according to an embodiment of the present invention. The fingerprint identification device 6 includes an image detection unit 100 and an image generation unit 200, wherein the image generation unit 200 includes a light-transmitting cover plate 202, the distance H3 between the micromirror layer 101 and the light-emitting layer 201 is set to be less than or equal to 800 μm, and Greater than or equal to h1+h2, where h1=x/2×tanθ, h2=6.045E -7 ×N×L 2 /t 3 , x is the minimum separation distance of the micromirrors corresponding to different pixels on the plane where the micromirror layer is located (that is, the distance between the micromirrors M1 and M3 on the plane where the micromirror layer 101 is located in FIG. 6 ), θ is the light-receiving half-height wide angle of each micromirror, and N is the force (Newton) of the center point of the fingerprint identification device 6 , L is the maximum size of the transparent cover plate 202 on its plane, that is, the diagonal length of the transparent cover plate 202 (mm), t is the total thickness of the transparent cover plate 202 and the light-emitting layer 201 (mm) . For example, when a force of 6 Newtons is applied to the center point of the fingerprint identification device 6, H3 is less than or equal to 800 um, and greater than or equal to h1+h2, where h1=x/2×tanθ, h2=3.627E- 6 ×L 2 /t 3 .

綜上所述，本發明實施例提供的指紋辨識裝置以微鏡的收光角以及微鏡之間的距離來限定微鏡層與發光層之間的最小距離，避免兩者距離不足而產生亮暗不均的問題。To sum up, the fingerprint identification device provided by the embodiment of the present invention uses the light-receiving angle of the micromirrors and the distance between the micromirrors to limit the minimum distance between the micromirror layer and the light emitting layer, so as to avoid the brightness caused by insufficient distance between the two. The problem of uneven darkness.

1、2、3、4、5、6:指紋辨識裝置 100、100A:影像檢測部 101:微鏡層 102:準直層 103:影像感測層 200、200A:影像產生部 201:發光層 201B:不透光區 201C:電路層 201P:顯示介質層 201T:透光區 202:透光蓋板 301、401、501:支撐框 502:底板 M1、M3、M4、M5:微鏡 M2、M6、M7:偽微鏡 P1、P2、P3、P4:像素 PD:光電二極體 PH:透光孔 SL1、SL2:遮光層 θ:角度 x、H1、H2、H3、h1、h2:距離 1, 2, 3, 4, 5, 6: Fingerprint identification device 100, 100A: Image detection section 101: Micromirror layer 102: Collimation Layer 103: Image Sensing Layer 200, 200A: Image Generation Department 201: Light Emitting Layer 201B: Opaque area 201C: Circuit Layer 201P: Display Media Layer 201T: Translucent area 202: translucent cover 301, 401, 501: Support frame 502: Bottom Plate M1, M3, M4, M5: Micromirrors M2, M6, M7: pseudo-micromirrors P1, P2, P3, P4: Pixels PD: Photodiode PH: light transmission hole SL1, SL2: shading layer θ: angle x, H1, H2, H3, h1, h2: distance

圖1A是根據本發明一實施例的指紋辨識裝置的橫截面示意圖。 圖1B是根據本發明一實施例的指紋辨識裝置的影像檢測部的平面示意圖。 圖1C是根據本發明一實施例的指紋辨識裝置的影像檢測部的橫截面示意圖。 圖2是根據一比較例的指紋辨識裝置的示意圖。 圖3是根據本發明一實施例的指紋辨識裝置的示意圖。 圖4是根據本發明一實施例的指紋辨識裝置的示意圖。 圖5是根據本發明一實施例的指紋辨識裝置的示意圖。 圖6是根據本發明一實施例的指紋辨識裝置的橫截面示意圖。 1A is a schematic cross-sectional view of a fingerprint identification device according to an embodiment of the present invention. 1B is a schematic plan view of an image detection unit of a fingerprint identification device according to an embodiment of the present invention. 1C is a schematic cross-sectional view of an image detection portion of a fingerprint identification device according to an embodiment of the present invention. FIG. 2 is a schematic diagram of a fingerprint identification device according to a comparative example. FIG. 3 is a schematic diagram of a fingerprint identification device according to an embodiment of the present invention. FIG. 4 is a schematic diagram of a fingerprint identification device according to an embodiment of the present invention. FIG. 5 is a schematic diagram of a fingerprint identification device according to an embodiment of the present invention. 6 is a schematic cross-sectional view of a fingerprint identification device according to an embodiment of the present invention.

1:指紋辨識裝置 1: Fingerprint identification device

100:影像檢測部 100: Image Detection Department

101:微鏡層 101: Micromirror layer

102:準直層 102: Collimation Layer

103:影像感測層 103: Image Sensing Layer

200:影像產生部 200: Image Generation Department

201:發光層 201: Light Emitting Layer

201B:不透光區 201B: Opaque area

201C:電路層 201C: Circuit Layer

201P:顯示介質層 201P: Display Media Layer

201T:透光區 201T: Translucent area

202:透光蓋板 202: translucent cover

M1、M3:微鏡 M1, M3: Micromirrors

M2:偽微鏡 M2: Pseudo Micromirror

P1、P2:像素 P1, P2: pixels

θ:角度 θ: angle

x、H1、h1:距離 x, H1, h1: distance

Claims (9)

一種指紋辨識裝置，包括：一發光層，包括一透光區以及一不透光區；一影像感測層，具備多個像素；以及一微鏡層，設置於該發光層以及該影像感測層之間，且具備與該些像素分別對應的多個微鏡，其中該微鏡層與該發光層之間的距離小於或等於800um，且大於或等於h1，h1=x/2×tanθ，x為對應不同像素的該些微鏡在該微鏡層所在平面上的最小間隔距離，θ為每一微鏡的收光半高寬角。 A fingerprint identification device, comprising: a light-emitting layer including a light-transmitting area and an opaque area; an image-sensing layer having a plurality of pixels; and a micro-mirror layer disposed on the light-emitting layer and the image-sensing layer between the layers, and has a plurality of micromirrors corresponding to the pixels, wherein the distance between the micromirror layer and the light-emitting layer is less than or equal to 800um, and greater than or equal to h1, h1=x/2×tanθ, x is the minimum separation distance of the micromirrors corresponding to different pixels on the plane where the micromirror layer is located, and θ is the light receiving half-height width of each micromirror. 如請求項1所述的指紋辨識裝置，還包括一透光蓋板，其中該發光層位於該透光蓋板以及該微鏡層之間，且該微鏡層與該發光層之間的距離大於或等於h1+h2，h2=3.627E-6×L2/t3，L為該透光蓋板在該透光蓋板所在平面上的最大尺寸，且t為該透光蓋板以及該發光層的總厚度。 The fingerprint identification device according to claim 1, further comprising a light-transmitting cover plate, wherein the light-emitting layer is located between the light-transmitting cover plate and the micromirror layer, and the distance between the micromirror layer and the light-emitting layer is Greater than or equal to h1+h2, h2=3.627E -6 ×L 2 /t 3 , L is the maximum size of the light-transmitting cover on the plane where the light-transmitting cover is located, and t is the light-transmitting cover and the The total thickness of the light-emitting layer. 如請求項2所述的指紋辨識裝置，還包括一底板，其中該影像感測層設置於該底板以及該微鏡層之間。 The fingerprint identification device according to claim 2, further comprising a base plate, wherein the image sensing layer is disposed between the base plate and the micromirror layer. 如請求項2所述的指紋辨識裝置，還包括一支撐框，設置於該微鏡層與該發光層之間，其中該支撐框的楊氏模量小於1MPa。 The fingerprint identification device according to claim 2, further comprising a support frame disposed between the micromirror layer and the light-emitting layer, wherein the Young's modulus of the support frame is less than 1 MPa. 如請求項1所述的指紋辨識裝置，其中每一像素對應多個微鏡。 The fingerprint identification device according to claim 1, wherein each pixel corresponds to a plurality of micromirrors. 如請求項1所述的指紋辨識裝置，還包括一準直層，設置於該影像感測層與該微鏡層之間，其中該準直層包括一遮光層以及多個透光孔，且該些透光孔分別對應該些微鏡。 The fingerprint identification device according to claim 1, further comprising a collimation layer disposed between the image sensing layer and the micromirror layer, wherein the collimation layer comprises a light-shielding layer and a plurality of light-transmitting holes, and The light-transmitting holes correspond to the micromirrors respectively. 如請求項6所述的指紋辨識裝置，其中該微鏡層還包括多個偽微鏡，且每一偽微鏡所對應的該些透光孔的數量小於每一微鏡所對應的該些透光孔的數量。 The fingerprint identification device according to claim 6, wherein the micromirror layer further comprises a plurality of pseudo-micromirrors, and the number of the light-transmitting holes corresponding to each pseudo-micromirror is smaller than the number of the light-transmitting holes corresponding to each micromirror The number of light-transmitting holes. 如請求項1所述的指紋辨識裝置，其中該發光層為一自發光面板。 The fingerprint identification device according to claim 1, wherein the light-emitting layer is a self-luminous panel. 如請求項1所述的指紋辨識裝置，還包括一支撐框，設置於該微鏡層與該發光層之間，其中該支撐框的楊氏模量大於或等於1MPa。 The fingerprint identification device according to claim 1, further comprising a support frame disposed between the micromirror layer and the light-emitting layer, wherein the Young's modulus of the support frame is greater than or equal to 1 MPa.
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