WO2021062999A1 - Optical sensor, optical sensing system, and method for manufacturing optical sensor - Google Patents

Optical sensor, optical sensing system, and method for manufacturing optical sensor Download PDF

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Publication number
WO2021062999A1
WO2021062999A1 PCT/CN2020/087524 CN2020087524W WO2021062999A1 WO 2021062999 A1 WO2021062999 A1 WO 2021062999A1 CN 2020087524 W CN2020087524 W CN 2020087524W WO 2021062999 A1 WO2021062999 A1 WO 2021062999A1
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light
layer
optical sensor
shielding
holes
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PCT/CN2020/087524
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French (fr)
Chinese (zh)
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涂志中
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神盾股份有限公司
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06VIMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12Fingerprints or palmprints
    • G06V40/13Sensors therefor
    • G06V40/1324Sensors therefor by using geometrical optics, e.g. using prisms

Definitions

  • the invention relates to an optical sensor, an optical sensing system and a manufacturing method thereof, in particular to an optical sensor, an optical sensing system and a manufacturing method thereof that can simplify the process and improve the product yield.
  • the purpose of the present invention is to provide an optical sensor, an optical sensing system and a manufacturing method thereof to solve at least one of the above-mentioned problems.
  • an optical sensor including a substrate, a patterned light-shielding layer on the substrate, a transparent medium layer on the patterned light-shielding layer and covering sensing pixels, and a transparent medium layer disposed on the transparent medium layer A light guide layer on top.
  • the substrate includes a plurality of sensing pixels
  • the patterned light-shielding layer is formed on a light-shielding material layer by irradiating a mask with an excimer laser light source.
  • the patterned light-shielding layer includes a plurality of through holes
  • the patterned light shielding layer includes a plurality of through holes.
  • the position corresponds to the position of the sensing pixel and exposes the sensing pixel.
  • the light guide layer disposed on the transparent medium layer includes a plurality of light guide members corresponding to a plurality of through holes, wherein the plurality of light guide members guide an incident light to penetrate the transparent medium layer to the sensing pixels exposed by the through holes.
  • the sidewall of the through hole has a surface roughness of 0.15 nm or less.
  • the patterned light-shielding layer is a polymer material with light-shielding properties.
  • the patterned light-shielding layer has a thickness ranging from about 2 ⁇ m to 500 ⁇ m.
  • the aspect ratio of the through hole is in the range of 5-15.
  • an optical sensing system including a frame having a accommodating groove, an optical sensor as described above arranged in the accommodating groove, and an optical sensor arranged on the optical sensor.
  • One display One display.
  • a method for manufacturing an optical sensor including: providing a substrate, wherein the substrate includes a plurality of sensing pixels; forming a light-shielding material layer on the substrate; and providing a photomask on the substrate Above the light-shielding material layer, the photomask has a light-shielding pattern; an excimer laser light source is used to irradiate and scan the light-shield to transfer the light-shielding pattern on the photomask to the light-shielding material layer to form a A patterned light-shielding layer, wherein the patterned light-shielding layer includes a plurality of through holes, and the positions of the plurality of through holes correspond to the positions of the sensing pixels and expose the sensing pixels; a transparent medium layer is formed on the patterned light-shielding layer, and The transparent medium layer covers the sensing pixels; a light guide layer is formed on the transparent medium layer, and the light guide layer includes a
  • the excimer laser light source is a linear light source.
  • the optical sensor, the optical sensing system, and the manufacturing method thereof can use a high-energy excimer laser light source to directly perform one-time pattern processing on the light-shielding material layer. And it will not cause thermal damage to the light-shielding material layer, can easily and quickly obtain holes with sufficient aspect ratio and good quality (flat surface), and there is no need to use optical glue to bond the light collimating layer as in the optical fiber process.
  • the thickness of the manufactured optical sensor is reduced, thereby reducing the overall thickness of the applied electronic device.
  • Figures 1 to 6 are schematic cross-sectional views showing an optical sensor at multiple intermediate stages in the process according to some embodiments of the present invention.
  • FIG. 7 shows a schematic cross-sectional view of an optical sensor according to another embodiment of the present invention.
  • FIG. 8 shows a schematic cross-sectional view of an optical sensing system according to an embodiment of the present disclosure.
  • the invention provides an optical sensor, an optical sensor system and a manufacturing method thereof.
  • FIG. 1 to FIG. 6 show a schematic cross-sectional view of an optical sensor at various intermediate stages in the process.
  • a substrate 201 is provided, and the substrate 201 includes, for example, a plurality of sensing pixels 203 arranged in a sensing pixel array 202.
  • the substrate 201 may be a semiconductor substrate, such as a silicon substrate.
  • the aforementioned semiconductor substrate may also be an elemental semiconductor or a compound semiconductor.
  • each sensing pixel 203 included in the substrate 201 may be connected to a signal processing circuit (not shown).
  • Each sensing pixel 203 may include one or more photodetectors.
  • the light detector may be a complementary metal-oxide-semiconductor (CMOS) image sensor.
  • the photodetector may also include a charged coupling device (CCD) sensor, an active sensor, a passive sensor, other suitable sensors, or a combination of the foregoing.
  • CCD charged coupling device
  • the sensing pixel 203 can convert the received light signal into an electronic signal through a photodetector, and process the above-mentioned electronic signal through a signal processing circuit.
  • a light-shielding material layer 2050 is formed on the substrate 201.
  • the light-shielding material layer 2050 covers the sensing pixels 203 included in the sensing pixel array 202.
  • the light-shielding material layer contains a light-shielding material having a light transmittance of less than 1% or less in the wavelength range of 1200 nanometers or less.
  • the light-shielding material layer 2050 includes a polymer material having light-shielding properties, for example, a resin material having light-shielding properties.
  • the light-shielding material layer 2050 may be a polymer material containing pigments or dyes, so that the light-shielding material layer 2050 has light-shielding properties.
  • the light-shielding material layer 2050 may contain black pigments such as carbon black or black particles, or resin materials of other pigments.
  • the light-shielding material layer 2050 includes polyester, polyimide, polystyrene, polycarbonate, epoxy, benzocyclobutene (BCB), and Xylene, acrylic, polybenzoxazole (PBO), other suitable materials, or a combination of the above.
  • the light-shielding material layer 2050 can be formed on the substrate 201 by, for example, spin-coating, chemical vapor deposition (CVD), other suitable methods, or a combination of the above.
  • CVD chemical vapor deposition
  • a curing process of heating or lighting may also be included.
  • the light-shielding material layer 2050 has a thickness T ranging from about 2 ⁇ m to about 500 ⁇ m. In some embodiments, the light-shielding material layer 2050 has a thickness T ranging from about 50 ⁇ m to about 500 ⁇ m. In some embodiments, the light-shielding material layer 2050 has a thickness T ranging from about 50 ⁇ m to about 200 ⁇ m. In some embodiments, the light-shielding material layer 2050 has a thickness T ranging from about 100 ⁇ m to about 200 ⁇ m.
  • a photomask 30 is provided above the light-shielding material layer 2050, and the photomask 30 has a predetermined light-shielding pattern.
  • the photomask 30 includes a plurality of light-shielding parts 301 and a plurality of light-transmitting parts 302 appropriately arranged to form a light-shielding pattern 30P.
  • an excimer laser light source (excimer laser light source) 40 is used to illuminate and scan the mask 30, for example, as shown in FIG. Scan the photomask 30 in the direction D1 to transfer the light-shielding pattern 30P on the photomask 30 to the light-shielding material layer 2050 to form a patterned light-shielding layer 205.
  • the size of the sensing pixel, the thickness of the patterned light-shielding layer 205 and other parameters affecting optical sensing in the application device can be adjusted to adjust the aperture of the through hole 207 to be formed.
  • the aperture of the through hole 207 of the patterned light shielding layer 205 is in the range of 1 ⁇ m to 35 ⁇ m, but the present disclosure is not limited thereto.
  • the depth h of the through hole 207 is approximately equal to the thickness T of the patterned light shielding layer 205. In some embodiments, the depth h of the through hole 207 is in the range of about 5 ⁇ m to about 500 ⁇ m, or in the range of 50 ⁇ m to about 500 ⁇ m, or in the range of 50 ⁇ m to about 200 ⁇ m, or in the range of 100 ⁇ m to about 200 ⁇ m.
  • a through hole 207 with a high aspect ratio can be formed at the light-shielding material layer 2050.
  • the aspect ratio of the through hole 207 is in the range of 5-15. Taking the thickness of the patterned light-shielding layer 205 as an example, when the aperture d of the through hole 207 is 10 ⁇ m, the aspect ratio h/d of the through hole 207 is 10, and the aperture d of the through hole 207 is 6.67 ⁇ m. The aspect ratio is 15.
  • the excimer laser light source 40 scans the mask 30 along the scanning direction D1 as shown in the figure.
  • the excimer laser light source 40(i-1) represents the (i-1)th pattern that the excimer laser light source travels to the mask 30 during scanning, such as a shading part 301, so the lower part corresponds to the shading part 301
  • the portion of the light-shielding material layer 2050 is retained on the substrate 201.
  • the excimer laser light source 40(i) represents the (i)th pattern of the excimer laser light source traveling to the mask 30 during scanning, such as a light-transmitting part 302, so the excimer laser light source 40(i) is cut out from the bottom Corresponding to the portion of the light-shielding material layer 2050 of the light-transmitting portion 302, a through hole 207 is formed.
  • the excimer laser light source 40(i+1) represents the (i+1)th pattern that the excimer laser light source travels to the mask 30 during scanning, such as the next shading part 301, so the corresponding shading material below Part of the layer 2050 is retained on the substrate 201.
  • the excimer laser is a high-power deep ultraviolet light that is excited by an electric discharge after mixing an inert gas and a more active halogen.
  • Excimer lasers are available in ArF (193nm), KrF (248nm), XeCl (308nm), XeF (351nm) and other types due to different waves.
  • the light source of the excimer laser is ArF or KrF laser, where ArF laser is suitable for processing PMMA, and KrF is suitable for processing polyimide and polycarbonate.
  • the excimer laser is deep ultraviolet light with a wavelength of 200-300 nm, the exposure depth is hundreds of micrometers ( ⁇ m), and the aspect ratio is 5-15.
  • the excimer laser light source 40 includes a plurality of laser heads (not shown), for example, the plurality of laser heads are arranged to form a line light source, and the line light source is aligned along the direction D1 as shown in FIG.
  • the mask 30 performs scanning.
  • a plurality of laser heads are arranged along the Z direction to form a line light source, and scan the mask 30 along the ⁇ X direction. Therefore, according to the manufacturing method proposed in some embodiments of the present disclosure, the excimer laser light source 40 including multiple laser heads can scan a large area substrate to complete the transfer of the light shielding pattern 30P in an appropriate time, which is suitable for application Fabrication of optical sensors on large-area substrates.
  • the plurality of through holes 207 of the patterned light shielding layer 205 formed on the substrate 201 correspond to the positions of the plurality of sensing pixels of the sensing pixel array 202, and the sensing pixels 203 are exposed.
  • a patterned light-shielding layer 205 on the substrate 201, it is possible to prevent the sensing pixel array 202 from receiving unwanted light, and to prevent crosstalk caused by the light incident on the optical sensor. , Thereby improving the performance of the optical sensor.
  • the excimer laser light source can remove the material in a very small explosive manner at low temperature and in a very short time, it will not cause thermal damage to the material layer. From the above results of drilling with different lasers, it can be clearly seen that the holes processed by the excimer laser light source are hardly affected by the thermal effect, and a relatively smooth sidewall surface is obtained. Therefore, the embodiment of the present disclosure uses the excimer laser as the light source to improve the quality of the through holes.
  • the through hole 207 formed by the method proposed in the above embodiment has a very smooth sidewall surface, and the edge of the opening is also very flat.
  • the sidewall 207s of the formed through hole 207 has a surface roughness of 0.15 nm or less or 0.10 nm or less.
  • a transparent medium layer 210 can be formed on the patterned light-shielding layer 205, and the transparent medium layer 210 covers the sensing pixels 203 exposed from the through holes 207 of the patterned light-shielding layer 205.
  • the transparent medium layer 210 may include a UV-curable material, a thermosetting material, or a combination of the above.
  • a light guide layer 214 is formed on the transparent medium layer 210, and the light guide layer 214 includes a plurality of light guide members, such as microlenses 215, the plurality of microlenses 215 correspond to the through holes 207 of the patterned light shielding layer 205 .
  • a plurality of light guides (such as microlenses 215) guide an incident light to pass through the transparent medium layer 210 to the sensing pixels 203 exposed by the plurality of through holes 207.
  • the material of the light guide layer 214 may include a transparent photocurable material or a thermal curing material, and the formed microlens layer may undergo a patterning process to control the radius of curvature of the microlens 215 .
  • a protective layer 217 is covered on the light guide layer 214 (including a plurality of microlenses 215) and the patterned light shielding layer 205.
  • the protective layer 217 may be formed of silicon dioxide, and may be formed by plasma-enhanced chemical vapor deposition (plasma-enhanced CVD, PECVD), remote plasma-enhanced chemical vapor deposition (remote plasma-enhanced CVD, RPECVD). ), other similar methods or a combination of the above to deposit silicon dioxide on the microlenses 215 and the patterned light-shielding layer 205.
  • the protective layer 217 can effectively protect the microlens 215 to prevent the microlens 215 from being damaged during the subsequent packaging process.
  • FIG. 7 shows a schematic cross-sectional view of an optical sensor according to some other embodiments of the present invention.
  • a filter layer 212 is disposed between the transparent medium layer 210 and the patterned light-shielding layer 205 and/or the microlens 215, and the microlens 215 is formed after the filter layer 212 is formed.
  • the filter layer 212 may be an infrared cut filter (ICF). Visible light has high transmittance to the infrared filter layer, and infrared light has high reflectivity to it.
  • the filter layer 212 can correct the color shift of the optical sensor and reduce the interference of infrared rays.
  • the optical sensing system 600 includes an optical sensor 200, a display 500, a frame 700, a battery 800 and a base 900.
  • the base 900 may be, for example, a part of the housing of an electronic device.
  • the battery 800 can be disposed on the base 900.
  • the frame 700 can be disposed above the battery 800 and has a receiving groove 710, but the embodiment of the present disclosure is not limited to this. In some other embodiments, the frame 700 may not have the accommodating groove 710, depending on actual requirements.
  • an optical sensor 200 for sensing an image of a target F can be disposed on the frame 700.
  • the optical sensor 200 can be disposed in the receiving groove 710 of the frame 700 and located on a bottom surface of the receiving groove 710.
  • the display 500 can be arranged above the optical sensor 200 for displaying information.
  • the target F can be located on or above the display 500.
  • the optical sensor 200 can sense and recognize the contour features of the target F (for example, fingerprint features of a finger), and the battery 800 can supply power to the optical sensor 200 and the display 500 to maintain the operation of the electronic device.
  • the optical sensor 200 can be (but not limited to) be disposed in an optical sensor module 1000 including a carrier board 1001, a flexible circuit board 1002, a bonding wire 1003, and a sealing glue layer 1006, wherein the optical sensor The device 200 and the flexible circuit board 1002 are electrically connected by a bonding wire 1003.
  • optical collimators are manufactured by using semiconductor technology, and a few are formed by optical fiber technology.
  • the optical collimator is formed by a semiconductor process, due to the ability of the etching photolithography process, it is impossible to directly etch holes with sufficient aspect ratio in a thick film layer, so it is necessary to deposit multiple film layers with holes.
  • a stacking method is used to construct holes with a required aspect ratio.
  • this process is time-consuming, and the stacked holes need to have precise positions, and the process yield needs to be improved.
  • the optical fiber glass needs to be sintered, the process is not easy, and the optical fiber glass is easily broken when the thickness is less than 200 ⁇ m, for example, not only is not suitable for the production of large-area substrates, but also requires Optical adhesive (optically clear adhesive, OCA) is used to bond the fiber glass on the substrate with sensing pixels, and the optical adhesive increases the thickness of the entire optical sensor.
  • OCA optical clear adhesive
  • the thickness of the optical fiber glass is about 200 ⁇ m to 250 ⁇ m
  • the thickness of the optical glue is about 50 ⁇ m
  • the total thickness of the optical fiber collimator is about 250 ⁇ m to 300 ⁇ m.
  • a high-energy excimer laser light source can be used to directly perform one-time pattern processing on the light-shielding material layer without causing any damage to the light-shielding material layer.
  • causes heat damage can easily and quickly obtain holes with sufficient aspect ratio and good quality (flat surface), and there is no need to use optical glue to bond the light collimating layer as in the optical fiber process, which can reduce the number of optical sensors. , Thereby reducing the overall thickness of the applied electronic device.

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Abstract

Provided are an optical sensor, an optical sensing system, and a method for manufacturing an optical sensor. The optical sensor comprises a substrate (201), a patterned light-shielding layer (205) located on the substrate, a transparent dielectric layer (210) located on the patterned light-shielding layer and covering sensing pixels (203), and a light guide layer (214) arranged on the transparent dielectric layer, wherein the substrate comprises a plurality of sensing pixels; the patterned light-shielding layer is formed by irradiating a photomask (30) onto a light-shielding material layer (2050) through an excimer laser light source (40), and the patterned light-shielding layer includes a plurality of through holes (207), with the positions of the plurality of through holes corresponding to the positions of the sensing pixels and exposing the sensing pixels; and the light guide layer, which is arranged on the transparent dielectric layer, comprises a plurality of light guide members corresponding to the plurality of through holes, and the plurality of light guide members guide incident light to penetrate through the transparent dielectric layer to reach the sensing pixels exposed by the plurality of through holes.

Description

光学感测器、光学感测系统及其制造方法Optical sensor, optical sensor system and manufacturing method thereof 技术领域Technical field
本发明涉及一种光学感测器、光学感测系统及其制造方法,尤其涉及一种可简化工艺并提升产品良率的光学感测器、光学感测系统及其制造方法。The invention relates to an optical sensor, an optical sensing system and a manufacturing method thereof, in particular to an optical sensor, an optical sensing system and a manufacturing method thereof that can simplify the process and improve the product yield.
背景技术Background technique
随着行动电子装置走向大显示区域及窄边框的趋势,将指纹辨识装置整合于屏幕下为最佳的屏幕解锁方式。然而,目前光准直器的制作方式多是利用半导体工艺形成,少数是利用光纤工艺而形成光准直器。然而,上述两种形成光准直器的方法皆面临了工艺良率低及成本高的问题。With the trend of mobile electronic devices moving towards larger display areas and narrow bezels, integrating the fingerprint recognition device under the screen is the best way to unlock the screen. However, most of the current manufacturing methods of optical collimators are formed by semiconductor technology, and a few are formed by optical fiber technology. However, the above two methods of forming the light collimator both face the problems of low process yield and high cost.
发明内容Summary of the invention
本发明的目的在于提供一种光学感测器、光学感测系统及其制造方法,以解决上述至少一个问题。The purpose of the present invention is to provide an optical sensor, an optical sensing system and a manufacturing method thereof to solve at least one of the above-mentioned problems.
本发明的一些实施例公开一种光学感测器,包括一基板、位于基板上的一图案化遮光层、位于图案化遮光层上且覆盖感测像素的一透明介质层以及设置于透明介质层上的一光导向层。其中,基板包含多个感测像素,而图案化遮光层以一准分子激光光源照射一光罩而于一遮光材料层所形成,图案化遮光层包含多个通孔,且多个通孔的位置对应感测像素的位置并暴露出感测像素。设置于透明介质层上的光导向层包括多个导光件对应多个通孔,其中多个导光件引导一入射光穿透该透明介质层至多个通孔所露出的感测像素。Some embodiments of the present invention disclose an optical sensor including a substrate, a patterned light-shielding layer on the substrate, a transparent medium layer on the patterned light-shielding layer and covering sensing pixels, and a transparent medium layer disposed on the transparent medium layer A light guide layer on top. Wherein, the substrate includes a plurality of sensing pixels, and the patterned light-shielding layer is formed on a light-shielding material layer by irradiating a mask with an excimer laser light source. The patterned light-shielding layer includes a plurality of through holes, and the patterned light shielding layer includes a plurality of through holes. The position corresponds to the position of the sensing pixel and exposes the sensing pixel. The light guide layer disposed on the transparent medium layer includes a plurality of light guide members corresponding to a plurality of through holes, wherein the plurality of light guide members guide an incident light to penetrate the transparent medium layer to the sensing pixels exposed by the through holes.
在一些实施例中,通孔的侧壁具有0.15nm以下的表面粗糙度。In some embodiments, the sidewall of the through hole has a surface roughness of 0.15 nm or less.
在一些实施例中,图案化遮光层为具有遮光特性的高分子材料。In some embodiments, the patterned light-shielding layer is a polymer material with light-shielding properties.
在一些实施例中,图案化遮光层具有约2μm~500μm范围之间的厚度。In some embodiments, the patterned light-shielding layer has a thickness ranging from about 2 μm to 500 μm.
在一些实施例中,通孔的深宽比在5~15范围之间。In some embodiments, the aspect ratio of the through hole is in the range of 5-15.
根据本发明的一些实施例,公开一种光学感测系统,包括具有一容置槽的一框架、设置于容置槽中的如上述的光学感测器以及设置于光学感测器之上的一显示器。According to some embodiments of the present invention, an optical sensing system is disclosed, including a frame having a accommodating groove, an optical sensor as described above arranged in the accommodating groove, and an optical sensor arranged on the optical sensor. One display.
根据本发明的一些实施例,公开一种光学感测器的制造方法,包括:提供一基板, 其中此基板包括多个感测像素;在基板之上形成一遮光材料层;提供一光罩于遮光材料层的上方,此光罩具有一遮光图案;以一准分子激光光源(excimer laser light source)照射和扫描该光罩,以将光罩上的遮光图案转移至遮光材料层,而形成一图案化遮光层,其中图案化遮光层包含多个通孔,且多个通孔的位置对应感测像素的位置并暴露出感测像素;在图案化遮光层之上形成一透明介质层,且透明介质层覆盖感测像素;在透明介质层上形成一光导向层,且光导向层包括多个导光件对应多个通孔,其中多个导光件引导一入射光穿透透明介质层至多个通孔所露出的感测像素。According to some embodiments of the present invention, a method for manufacturing an optical sensor is disclosed, including: providing a substrate, wherein the substrate includes a plurality of sensing pixels; forming a light-shielding material layer on the substrate; and providing a photomask on the substrate Above the light-shielding material layer, the photomask has a light-shielding pattern; an excimer laser light source is used to irradiate and scan the light-shield to transfer the light-shielding pattern on the photomask to the light-shielding material layer to form a A patterned light-shielding layer, wherein the patterned light-shielding layer includes a plurality of through holes, and the positions of the plurality of through holes correspond to the positions of the sensing pixels and expose the sensing pixels; a transparent medium layer is formed on the patterned light-shielding layer, and The transparent medium layer covers the sensing pixels; a light guide layer is formed on the transparent medium layer, and the light guide layer includes a plurality of light guide members corresponding to a plurality of through holes, wherein the plurality of light guide members guide an incident light to penetrate the transparent medium layer To the sensing pixels exposed by the through holes.
在一些实施例中,准分子激光光源为一线光源。In some embodiments, the excimer laser light source is a linear light source.
本发明的有益效果在于,根据本公开一些实施例所提出的光学感测器、光学感测系统及其制造方式,可以使用高能量的准分子激光光源对于遮光材料层直接进行一次性图案加工,且不会对遮光材料层造成热损害,可简易且快速的得到具有足够深宽比和良好品质(表面平整)的孔洞,也无须如光纤工艺使用光学胶进行光准直层的贴合,可以减少制得光学感测器的厚度,进而降低应用的电子装置整体的厚度。The beneficial effect of the present invention is that according to some embodiments of the present disclosure, the optical sensor, the optical sensing system, and the manufacturing method thereof can use a high-energy excimer laser light source to directly perform one-time pattern processing on the light-shielding material layer. And it will not cause thermal damage to the light-shielding material layer, can easily and quickly obtain holes with sufficient aspect ratio and good quality (flat surface), and there is no need to use optical glue to bond the light collimating layer as in the optical fiber process. The thickness of the manufactured optical sensor is reduced, thereby reducing the overall thickness of the applied electronic device.
附图说明Description of the drawings
图1-图6是根据本发明的一些实施例,示出一种光学感测器于工艺中的多个中间阶段的剖面示意图。Figures 1 to 6 are schematic cross-sectional views showing an optical sensor at multiple intermediate stages in the process according to some embodiments of the present invention.
图7示出根据本发明另一实施例的一种光学感测器的剖面示意图。FIG. 7 shows a schematic cross-sectional view of an optical sensor according to another embodiment of the present invention.
图8示出根据本公开一实施例的一种光学感测系统的剖面示意图。FIG. 8 shows a schematic cross-sectional view of an optical sensing system according to an embodiment of the present disclosure.
附图标记如下:The reference signs are as follows:
201:基板201: Substrate
202:感测像素阵列202: Sensing pixel array
203:感测像素203: Sensing pixels
2050:遮光材料层2050: Shading material layer
205:图案化遮光层205: Patterned shading layer
207:通孔207: Through hole
207s:侧壁207s: sidewall
210:透明介质层210: transparent medium layer
212:滤光层212: filter layer
214:光导向层214: Light Guide Layer
215:微透镜215: Micro lens
217:保护层217: protective layer
LC:切割线LC: Cutting line
LU:光学感测单元LU: Optical sensing unit
30:光罩30: Mask
301:遮光部301: Shading part
302:透光部302: Translucent part
30P:遮光图案30P: shading pattern
40、40(i-1)、40(i)、40(i+1):准分子激光光源40, 40(i-1), 40(i), 40(i+1): Excimer laser light source
D1:扫描方向D1: Scan direction
500:显示器500: display
F:目标物F: target
F1:凸部F1: Convex
F2:凹部F2: recess
600:光学感测系统600: Optical sensing system
L1、L2:光线L1, L2: light
700:框架700: Frame
710:容置槽710: Containment Slot
800:电池800: battery
900:底座900: base
1000:光学感测器模块1000: Optical sensor module
1001:承载板1001: Carrier plate
1002:软性电路板1002: flexible circuit board
1003:焊线1003: wire bonding
1006:封胶层1006: Sealing layer
T:厚度T: thickness
h:深度h: depth
d:孔径d: Aperture
具体实施方式Detailed ways
本发明提供了光学感测器、光学感测系统及其制造方法。The invention provides an optical sensor, an optical sensor system and a manufacturing method thereof.
请参考图1-图6,示出一种光学感测器于工艺中的多个中间阶段的剖面示意图。Please refer to FIG. 1 to FIG. 6, which show a schematic cross-sectional view of an optical sensor at various intermediate stages in the process.
如图1所示,提供一基板201,且基板201包含有例如排列成一感测像素阵列202的多个感测像素203。基板201可为半导体基板,例如:硅基板。此外,上述半导体基板亦可为元素半导体(elemental semiconductor)或化合物半导体(compound semiconductor)。As shown in FIG. 1, a substrate 201 is provided, and the substrate 201 includes, for example, a plurality of sensing pixels 203 arranged in a sensing pixel array 202. The substrate 201 may be a semiconductor substrate, such as a silicon substrate. In addition, the aforementioned semiconductor substrate may also be an elemental semiconductor or a compound semiconductor.
再者,基板201所包含的多个感测像素203可与信号处理电路(signal processing circuitry)(未示出)连接。每个感测像素203可包含一或多个光检测器(photodetector)。光检测器可为互补式金属氧化物半导体(complimentary metal-oxide-semiconductor,CMOS)图像感测器。在一些其他实施例中,光检测器也可包含电荷耦合元件(charged coupling device,CCD)感测器、有源感测器、无源感测器、其他适合的感测器或上述的组合。感测像素203可通过光检测器将接收到的光信号转换成电子信号,并通过信号处理电路处理上述电子信号。Furthermore, the plurality of sensing pixels 203 included in the substrate 201 may be connected to a signal processing circuit (not shown). Each sensing pixel 203 may include one or more photodetectors. The light detector may be a complementary metal-oxide-semiconductor (CMOS) image sensor. In some other embodiments, the photodetector may also include a charged coupling device (CCD) sensor, an active sensor, a passive sensor, other suitable sensors, or a combination of the foregoing. The sensing pixel 203 can convert the received light signal into an electronic signal through a photodetector, and process the above-mentioned electronic signal through a signal processing circuit.
参照图2,在基板201上形成一遮光材料层2050。遮光材料层2050覆盖感测像素阵列202所包含的感测像素203。遮光材料层包含对于在1200纳米波长范围以下的光穿透率小于1%以下的遮光材料。2, a light-shielding material layer 2050 is formed on the substrate 201. The light-shielding material layer 2050 covers the sensing pixels 203 included in the sensing pixel array 202. The light-shielding material layer contains a light-shielding material having a light transmittance of less than 1% or less in the wavelength range of 1200 nanometers or less.
遮光材料层2050包含具有遮光特性的高分子材料,例如具有遮光特性的树脂材料。另外,遮光材料层2050可以是包含颜料或染料的高分子材料,使遮光材料层2050具有遮光特性。例如,遮光材料层2050可含有碳黑或黑色微粒子等黑色颜料或其他颜料的树脂材料。在一些实施例中,遮光材料层2050包含聚酯、聚酰亚胺(polyimide)、聚苯乙烯、聚碳酸酯、环氧树脂(epoxy)、苯并环丁烯(benzocyclobutene,BCB)、聚对二甲苯、丙烯酸脂、聚苯并恶唑(polybenzoxazole,PBO)、其他适当的材料或上述的组合。再者,在一些实施例中,可通过例如旋转涂布法(spin-coating)、化学气相沉积法(CVD)、其他适当的方法或上述的组合,将遮光材料层2050形成于基板201上。另外,根据遮光材料层2050所选用的高分子材料的特性,还可于基板201上形成遮光材料层2050之后,还包含加热或照光的一固化工艺(curing process)。The light-shielding material layer 2050 includes a polymer material having light-shielding properties, for example, a resin material having light-shielding properties. In addition, the light-shielding material layer 2050 may be a polymer material containing pigments or dyes, so that the light-shielding material layer 2050 has light-shielding properties. For example, the light-shielding material layer 2050 may contain black pigments such as carbon black or black particles, or resin materials of other pigments. In some embodiments, the light-shielding material layer 2050 includes polyester, polyimide, polystyrene, polycarbonate, epoxy, benzocyclobutene (BCB), and Xylene, acrylic, polybenzoxazole (PBO), other suitable materials, or a combination of the above. Furthermore, in some embodiments, the light-shielding material layer 2050 can be formed on the substrate 201 by, for example, spin-coating, chemical vapor deposition (CVD), other suitable methods, or a combination of the above. In addition, according to the characteristics of the polymer material selected for the light-shielding material layer 2050, after the light-shielding material layer 2050 is formed on the substrate 201, a curing process of heating or lighting may also be included.
根据本公开的实施例,遮光材料层2050具有约2μm至约500μm范围之间的厚度T。在一些实施例中,遮光材料层2050具有约50μm至约500μm范围之间的厚度T。在一些实施例中,遮光材料层2050具有约50μm至约200μm范围之间的厚度T。在一些实施例中,遮光材料层2050具有约100μm至约200μm范围之间的厚度T。According to an embodiment of the present disclosure, the light-shielding material layer 2050 has a thickness T ranging from about 2 μm to about 500 μm. In some embodiments, the light-shielding material layer 2050 has a thickness T ranging from about 50 μm to about 500 μm. In some embodiments, the light-shielding material layer 2050 has a thickness T ranging from about 50 μm to about 200 μm. In some embodiments, the light-shielding material layer 2050 has a thickness T ranging from about 100 μm to about 200 μm.
参照图3,提供一光罩30于遮光材料层2050的上方,且此光罩30具有预定的一遮光图案。一些实施例中,光罩30包含多个遮光部301和多个透光部302适当设置,以形成遮光图案30P。3, a photomask 30 is provided above the light-shielding material layer 2050, and the photomask 30 has a predetermined light-shielding pattern. In some embodiments, the photomask 30 includes a plurality of light-shielding parts 301 and a plurality of light-transmitting parts 302 appropriately arranged to form a light-shielding pattern 30P.
如图3-图4所示,于遮光材料层2050之上提供光罩30后,以一准分子激光光源(excimer laser light source)40照射和扫描光罩30,例如沿着如图3所示的方向D1对光罩30进行扫描,以将光罩30上的遮光图案30P转移至遮光材料层2050,而形成一图案化遮光层205。As shown in FIGS. 3 to 4, after the mask 30 is provided on the light-shielding material layer 2050, an excimer laser light source (excimer laser light source) 40 is used to illuminate and scan the mask 30, for example, as shown in FIG. Scan the photomask 30 in the direction D1 to transfer the light-shielding pattern 30P on the photomask 30 to the light-shielding material layer 2050 to form a patterned light-shielding layer 205.
根据本公开的实施例,可视应用装置中例如感测像素的尺寸、图案化遮光层205的厚度及其他影响光学感测的相关部件的参数,而调整所需形成的通孔207的孔径。在一些实施例中,图案化遮光层205的通孔207的孔径在1μm~35μm范围之间,但本公开并不仅限于此。According to the embodiment of the present disclosure, the size of the sensing pixel, the thickness of the patterned light-shielding layer 205 and other parameters affecting optical sensing in the application device can be adjusted to adjust the aperture of the through hole 207 to be formed. In some embodiments, the aperture of the through hole 207 of the patterned light shielding layer 205 is in the range of 1 μm to 35 μm, but the present disclosure is not limited thereto.
再者,通孔207的深度h大致等于图案化遮光层205的厚度T。在一些实施例中,通孔207的深度h为约5μm至约500μm范围之间,或者50μm至约500μm范围之间,或者50μm至约200μm,或者100μm至约200μm范围之间。Furthermore, the depth h of the through hole 207 is approximately equal to the thickness T of the patterned light shielding layer 205. In some embodiments, the depth h of the through hole 207 is in the range of about 5 μm to about 500 μm, or in the range of 50 μm to about 500 μm, or in the range of 50 μm to about 200 μm, or in the range of 100 μm to about 200 μm.
根据本公开的一些实施例,由于可在基板201上形成高分子遮光材料层,并搭配准分子激光光源进行遮光图案的转移,因此可以在遮光材料层2050处形成具高深宽比的通孔207。在一些实施例中,通孔207的深宽比在5~15范围之间。以图案化遮光层205的厚度100μm为例,通孔207的孔径d为10μm时,通孔207的深宽比h/d为10,通孔207的孔径d为6.67μm时,通孔207的深宽比为15。According to some embodiments of the present disclosure, since a polymer light-shielding material layer can be formed on the substrate 201 and used with an excimer laser light source to transfer the light-shielding pattern, a through hole 207 with a high aspect ratio can be formed at the light-shielding material layer 2050. . In some embodiments, the aspect ratio of the through hole 207 is in the range of 5-15. Taking the thickness of the patterned light-shielding layer 205 as an example, when the aperture d of the through hole 207 is 10 μm, the aspect ratio h/d of the through hole 207 is 10, and the aperture d of the through hole 207 is 6.67 μm. The aspect ratio is 15.
图3中,准分子激光光源40沿着如图中所示的扫描方向D1对光罩30进行扫描。其中,准分子激光光源40(i-1)代表准分子激光光源在进行扫描期间行进至光罩30的第(i-1)个图案,例如一遮光部301,因此下方对应于遮光部301的遮光材料层2050的部分得以保留于基板201上。准分子激光光源40(i)代表准分子激光光源在进行扫描期间行进至光罩30的第(i)个图案,例如一透光部302,因此准分子激光光源40(i)上挖除下方对应于透光部302的遮光材料层2050的部分,而形成通孔207。类似的,准分子激光光源40(i+1)代表准分子激光光源在进行扫描期间行进至光罩30的第(i+1)个图案,例如下一个遮光部301,因此下方对应的遮光材料层2050的部分得以保留于基板201上。In FIG. 3, the excimer laser light source 40 scans the mask 30 along the scanning direction D1 as shown in the figure. Among them, the excimer laser light source 40(i-1) represents the (i-1)th pattern that the excimer laser light source travels to the mask 30 during scanning, such as a shading part 301, so the lower part corresponds to the shading part 301 The portion of the light-shielding material layer 2050 is retained on the substrate 201. The excimer laser light source 40(i) represents the (i)th pattern of the excimer laser light source traveling to the mask 30 during scanning, such as a light-transmitting part 302, so the excimer laser light source 40(i) is cut out from the bottom Corresponding to the portion of the light-shielding material layer 2050 of the light-transmitting portion 302, a through hole 207 is formed. Similarly, the excimer laser light source 40(i+1) represents the (i+1)th pattern that the excimer laser light source travels to the mask 30 during scanning, such as the next shading part 301, so the corresponding shading material below Part of the layer 2050 is retained on the substrate 201.
在一些实施例中,准分子激光是由惰性气体与化学性质较活泼的卤素相混合后,再经放电所激发的高功率深紫外光。准分子激光因波的不同而有ArF(193nm)、 KrF(248nm)、XeCl(308nm)、XeF(351nm)等种类。在一些实施例中,准分子激光是的光源是ArF、KrF激光,其中ArF激光适合加工PMMA,KrF适合加工聚酰亚胺(polyimide)与聚碳酸酯(polycarbonate)。在一些实施例中,准分子激光为波长200-300nm的深紫外光,曝光深度为数百微米(μm),深宽比为5-15。In some embodiments, the excimer laser is a high-power deep ultraviolet light that is excited by an electric discharge after mixing an inert gas and a more active halogen. Excimer lasers are available in ArF (193nm), KrF (248nm), XeCl (308nm), XeF (351nm) and other types due to different waves. In some embodiments, the light source of the excimer laser is ArF or KrF laser, where ArF laser is suitable for processing PMMA, and KrF is suitable for processing polyimide and polycarbonate. In some embodiments, the excimer laser is deep ultraviolet light with a wavelength of 200-300 nm, the exposure depth is hundreds of micrometers (μm), and the aspect ratio is 5-15.
另外,在一些实施例中,准分子激光光源40例如包含多个激光头(未示出),多个激光头例如排列形成一线光源,且此线光源沿着如图3所示的方向D1对光罩30进行扫描。如图3所示,在一示例中,多个激光头例如沿着Z方向排列形成一线光源,并沿着-X方向对光罩30进行扫描。因此,根据本公开一些实施例所提出的制造方法,包含多个激光头的准分子激光光源40可以对大面积的基板进行扫描,以在适当时间内完成遮光图案30P的转移,而适合应用于大面积的基板上光学感测器的制作。In addition, in some embodiments, the excimer laser light source 40 includes a plurality of laser heads (not shown), for example, the plurality of laser heads are arranged to form a line light source, and the line light source is aligned along the direction D1 as shown in FIG. The mask 30 performs scanning. As shown in FIG. 3, in an example, a plurality of laser heads are arranged along the Z direction to form a line light source, and scan the mask 30 along the −X direction. Therefore, according to the manufacturing method proposed in some embodiments of the present disclosure, the excimer laser light source 40 including multiple laser heads can scan a large area substrate to complete the transfer of the light shielding pattern 30P in an appropriate time, which is suitable for application Fabrication of optical sensors on large-area substrates.
参照图4,形成于基板201上的图案化遮光层205的多个通孔207对应于感测像素阵列202的多个感测像素的位置,并暴露出感测像素203。根据本发明的一些实施例,通过形成图案化遮光层205于基板201上,可避免感测像素阵列202接收到不需要的光线,并可防止入射至光学感测器的光线所产生的串音,进而提升所制得的光学感测器的效能。4, the plurality of through holes 207 of the patterned light shielding layer 205 formed on the substrate 201 correspond to the positions of the plurality of sensing pixels of the sensing pixel array 202, and the sensing pixels 203 are exposed. According to some embodiments of the present invention, by forming a patterned light-shielding layer 205 on the substrate 201, it is possible to prevent the sensing pixel array 202 from receiving unwanted light, and to prevent crosstalk caused by the light incident on the optical sensor. , Thereby improving the performance of the optical sensor.
由于准分子激光光源在低温和极短时间即可以极微小的爆炸方式移除材料,不会对材料层造成热损害。从上述以不同激光进行钻孔的结果可清楚地看出,以准分子激光光源所加工制成的孔洞几乎不受热效应的影响,而获得相对光滑的侧壁表面。因此,本公开的实施例使用准分子激光作为光源可以提升制得通孔的品质。Because the excimer laser light source can remove the material in a very small explosive manner at low temperature and in a very short time, it will not cause thermal damage to the material layer. From the above results of drilling with different lasers, it can be clearly seen that the holes processed by the excimer laser light source are hardly affected by the thermal effect, and a relatively smooth sidewall surface is obtained. Therefore, the embodiment of the present disclosure uses the excimer laser as the light source to improve the quality of the through holes.
因此,通过上述实施例提出的方法所形成的通孔207具有十分光滑的侧壁表面,且开口处的边缘也十分平整。在一些实施例中,所形成的通孔207的侧壁207s具有0.15nm以下或0.10nm以下的表面粗糙度。Therefore, the through hole 207 formed by the method proposed in the above embodiment has a very smooth sidewall surface, and the edge of the opening is also very flat. In some embodiments, the sidewall 207s of the formed through hole 207 has a surface roughness of 0.15 nm or less or 0.10 nm or less.
参照图5,可形成一透明介质层210于图案化遮光层205上,且透明介质层210覆盖从图案化遮光层205的通孔207所露出的感测像素203。透明介质层210可包含光固化材料(UV-curable material)、热固化材料(thermosetting material)或上述的组合。5, a transparent medium layer 210 can be formed on the patterned light-shielding layer 205, and the transparent medium layer 210 covers the sensing pixels 203 exposed from the through holes 207 of the patterned light-shielding layer 205. The transparent medium layer 210 may include a UV-curable material, a thermosetting material, or a combination of the above.
再参照图5,透明介质层210上形成一光导向层214,且光导向层214包括多个导光件,例如微透镜215,多个微透镜215对应于图案化遮光层205的通孔207。多个导光件(例如微透镜215)引导一入射光穿过透明介质层210至多个通孔207所露出的感测像素203。5 again, a light guide layer 214 is formed on the transparent medium layer 210, and the light guide layer 214 includes a plurality of light guide members, such as microlenses 215, the plurality of microlenses 215 correspond to the through holes 207 of the patterned light shielding layer 205 . A plurality of light guides (such as microlenses 215) guide an incident light to pass through the transparent medium layer 210 to the sensing pixels 203 exposed by the plurality of through holes 207.
在一些实施例中,光导向层214(例如一微透镜层)的材料可包含透明的光固化材 料或热固化材料,所形成的微透镜层可经过图案化工艺来控制微透镜215的曲率半径。In some embodiments, the material of the light guide layer 214 (for example, a microlens layer) may include a transparent photocurable material or a thermal curing material, and the formed microlens layer may undergo a patterning process to control the radius of curvature of the microlens 215 .
图6,在光导向层214(包含多个微透镜215)及图案化遮光层205的上方覆盖一保护层217。在一些实施例中,保护层217可由二氧化硅所形成,并可通过等离子体增强化学气相沉积(plasma-enhanced CVD,PECVD)、远距等离子体增强化学气相沉积(remote plasma-enhanced CVD,RPECVD)、其他类似的方法或上述的组合来沉积二氧化硅于微透镜215及图案化遮光层205之上。保护层217可有效地保护微透镜215,以避免微透镜215在后续的封装工艺过程中遭受破坏。6, a protective layer 217 is covered on the light guide layer 214 (including a plurality of microlenses 215) and the patterned light shielding layer 205. In some embodiments, the protective layer 217 may be formed of silicon dioxide, and may be formed by plasma-enhanced chemical vapor deposition (plasma-enhanced CVD, PECVD), remote plasma-enhanced chemical vapor deposition (remote plasma-enhanced CVD, RPECVD). ), other similar methods or a combination of the above to deposit silicon dioxide on the microlenses 215 and the patterned light-shielding layer 205. The protective layer 217 can effectively protect the microlens 215 to prevent the microlens 215 from being damaged during the subsequent packaging process.
图7示出根据本发明一些其他实施例的一种光学感测器的剖面示意图。如图7所示,在透明介质层210与图案化遮光层205及/或微透镜215之间设置一滤光层212,并且在形成滤光层212之后形成微透镜215。在一些实施例中,滤光层212可为红外线滤光层(infrared cut filter,ICF)。可见光(visible light)对于此红外线滤光层具有高穿透率(transmittance),而红外光对其则具有高反射率(reflectivity)。滤光层212可修正光学感测器的色偏现象并减少红外线的干扰。FIG. 7 shows a schematic cross-sectional view of an optical sensor according to some other embodiments of the present invention. As shown in FIG. 7, a filter layer 212 is disposed between the transparent medium layer 210 and the patterned light-shielding layer 205 and/or the microlens 215, and the microlens 215 is formed after the filter layer 212 is formed. In some embodiments, the filter layer 212 may be an infrared cut filter (ICF). Visible light has high transmittance to the infrared filter layer, and infrared light has high reflectivity to it. The filter layer 212 can correct the color shift of the optical sensor and reduce the interference of infrared rays.
参照图8,在一些实施例中,光学感测系统600包含一光学感测器200、一显示器500、一框架700、一电池800及一底座900。光学感测器200各部件请参照上述实施例的内容。底座900可例如为电子设备的外壳的一部分。电池800可设置于底座900上。框架700可设置于电池800的上方,并具有一容置槽710,但本公开实施例并非以此为限。在一些其他实施例中,框架700也可不具有容置槽710,可视实际需求而定。Referring to FIG. 8, in some embodiments, the optical sensing system 600 includes an optical sensor 200, a display 500, a frame 700, a battery 800 and a base 900. For the components of the optical sensor 200, please refer to the content of the above-mentioned embodiment. The base 900 may be, for example, a part of the housing of an electronic device. The battery 800 can be disposed on the base 900. The frame 700 can be disposed above the battery 800 and has a receiving groove 710, but the embodiment of the present disclosure is not limited to this. In some other embodiments, the frame 700 may not have the accommodating groove 710, depending on actual requirements.
如图8所示,用以感测一目标物F的图像的光学感测器200可设置于框架700之上。光学感测器200可设置于框架700的容置槽710中,并位于容置槽710的一底面上。显示器500可设置于光学感测器200的上方,用于显示信息。目标物F可位于显示器500上或上方。光学感测器200可对目标物F的轮廓特征(例如,手指的指纹特征)进行感测与识别,而电池800可供给电力至光学感测器200与显示器500,以维持电子设备的运作。再者,光学感测器200可以(但不限制)被设置于包含承载板1001、软性电路板1002、焊线1003及封胶层1006的一光学感测器模块1000中,其中光学感测器200与软性电路板1002通过焊线1003电性连接。As shown in FIG. 8, an optical sensor 200 for sensing an image of a target F can be disposed on the frame 700. The optical sensor 200 can be disposed in the receiving groove 710 of the frame 700 and located on a bottom surface of the receiving groove 710. The display 500 can be arranged above the optical sensor 200 for displaying information. The target F can be located on or above the display 500. The optical sensor 200 can sense and recognize the contour features of the target F (for example, fingerprint features of a finger), and the battery 800 can supply power to the optical sensor 200 and the display 500 to maintain the operation of the electronic device. Furthermore, the optical sensor 200 can be (but not limited to) be disposed in an optical sensor module 1000 including a carrier board 1001, a flexible circuit board 1002, a bonding wire 1003, and a sealing glue layer 1006, wherein the optical sensor The device 200 and the flexible circuit board 1002 are electrically connected by a bonding wire 1003.
目前光准直器的制作方式多是利用半导体工艺形成,少数是利用光纤工艺而形成光准直器。以半导体工艺形成光学准直器时,由于受限于蚀刻光刻工艺的能力,无法在一厚膜层中直接蚀刻出具有足够深宽比的孔洞,因此需要沉积多个具有孔洞的膜 层,以堆叠方式建构出所需深宽比的孔洞,然而此种工艺方式耗费时间,且堆叠的孔洞需具有精准位置,工艺良率有待改善。另外,于目前使用光纤工艺形成光准直器的方式中,需要对光纤玻璃进行烧结,工艺不易,且光纤玻璃在例如厚度200μm以下容易破裂,不但不适合进行大面积基板的制作,并且还须使用光学胶(optically clear adhesive,OCA)将光纤玻璃粘合在具有感测像素的基板上,而光学胶会增加整个光学感测器的厚度。例如,光纤玻璃厚度为约200μm至250μm,光学胶厚度为约50μm,光纤准直器总厚度为约250μm至300μm。At present, most optical collimators are manufactured by using semiconductor technology, and a few are formed by optical fiber technology. When the optical collimator is formed by a semiconductor process, due to the ability of the etching photolithography process, it is impossible to directly etch holes with sufficient aspect ratio in a thick film layer, so it is necessary to deposit multiple film layers with holes. A stacking method is used to construct holes with a required aspect ratio. However, this process is time-consuming, and the stacked holes need to have precise positions, and the process yield needs to be improved. In addition, in the current method of forming an optical collimator using an optical fiber process, the optical fiber glass needs to be sintered, the process is not easy, and the optical fiber glass is easily broken when the thickness is less than 200μm, for example, not only is not suitable for the production of large-area substrates, but also requires Optical adhesive (optically clear adhesive, OCA) is used to bond the fiber glass on the substrate with sensing pixels, and the optical adhesive increases the thickness of the entire optical sensor. For example, the thickness of the optical fiber glass is about 200 μm to 250 μm, the thickness of the optical glue is about 50 μm, and the total thickness of the optical fiber collimator is about 250 μm to 300 μm.
根据本公开一些实施例所提出的光学感测器、光学感测系统及其制造方式,可以使用高能量的准分子激光光源对于遮光材料层直接进行一次性图案加工,且不会对遮光材料层造成热损害,可简易且快速的得到具有足够深宽比和良好品质(表面平整)的孔洞,也无须如光纤工艺使用光学胶进行光准直层的贴合,可以减少制得光学感测器的厚度,进而降低应用的电子装置整体的厚度。According to the optical sensors, optical sensing systems and manufacturing methods proposed in some embodiments of the present disclosure, a high-energy excimer laser light source can be used to directly perform one-time pattern processing on the light-shielding material layer without causing any damage to the light-shielding material layer. Causes heat damage, can easily and quickly obtain holes with sufficient aspect ratio and good quality (flat surface), and there is no need to use optical glue to bond the light collimating layer as in the optical fiber process, which can reduce the number of optical sensors. , Thereby reducing the overall thickness of the applied electronic device.

Claims (10)

  1. 一种光学感测器,包括:An optical sensor, including:
    一基板,包括多个感测像素;A substrate including a plurality of sensing pixels;
    一图案化遮光层,设置于该基板之上,该图案化遮光层以一准分子激光光源照射一光罩而于一遮光材料层所形成,该图案化遮光层包含多个通孔,且多个所述通孔的位置对应多个所述感测像素的位置并暴露出多个所述感测像素;A patterned light-shielding layer is disposed on the substrate. The patterned light-shielding layer is formed on a light-shielding material layer by irradiating a mask with an excimer laser light source. The patterned light-shielding layer includes a plurality of through holes and a plurality of through holes. The positions of each of the through holes correspond to the positions of a plurality of the sensing pixels and expose a plurality of the sensing pixels;
    一透明介质层,位于该图案化遮光层上且覆盖多个所述感测像素;以及A transparent medium layer located on the patterned light-shielding layer and covering a plurality of said sensing pixels; and
    一光导向层,设置于该透明介质层上,且该光导向层包括多个导光件对应多个所述通孔,其中多个所述导光件引导一入射光穿透该透明介质层至多个所述通孔所露出的多个所述感测像素。A light guide layer is arranged on the transparent medium layer, and the light guide layer includes a plurality of light guide members corresponding to a plurality of said through holes, wherein a plurality of said light guide members guide an incident light to penetrate the transparent medium layer To the plurality of sensing pixels exposed by the plurality of through holes.
  2. 如权利要求1所述的光学感测器,其中多个所述通孔的侧壁具有0.15nm以下的表面粗糙度。The optical sensor of claim 1, wherein the sidewalls of the plurality of through holes have a surface roughness of 0.15 nm or less.
  3. 如权利要求1所述的光学感测器,其中该图案化遮光层为具有遮光特性的高分子材料。8. The optical sensor of claim 1, wherein the patterned light-shielding layer is a polymer material with light-shielding properties.
  4. 如权利要求1所述的光学感测器,其中该图案化遮光层包含聚酯、聚酰亚胺、聚苯乙烯、聚碳酸酯、环氧树脂、苯并环丁烯、聚对二甲苯、丙烯酸脂、聚苯并恶唑或前述的组合。The optical sensor of claim 1, wherein the patterned light-shielding layer comprises polyester, polyimide, polystyrene, polycarbonate, epoxy resin, benzocyclobutene, parylene, Acrylic, polybenzoxazole or a combination of the foregoing.
  5. 如权利要求1所述的光学感测器,其中该图案化遮光层为包含碳黑、具有黑色微粒子的黑色颜料或包含其他颜料的树脂材料。8. The optical sensor of claim 1, wherein the patterned light-shielding layer is made of carbon black, black pigment with black particles, or resin material containing other pigments.
  6. 如权利要求1所述的光学感测器,其中该图案化遮光层具有2μm~500μm范围之间的厚度。8. The optical sensor of claim 1, wherein the patterned light-shielding layer has a thickness ranging from 2 μm to 500 μm.
  7. 如权利要求1所述的光学感测器,其中多个所述通孔的深宽比在5~15范围之间。8. The optical sensor of claim 1, wherein the aspect ratio of the plurality of through holes is in the range of 5-15.
  8. 一种光学感测系统,包括:An optical sensing system, including:
    一框架,具有一容置槽;A frame with a accommodating slot;
    如权利要求1~7中任一项所述的光学感测器,设置于该容置槽中;以及7. The optical sensor of any one of claims 1-7, which is disposed in the accommodating groove; and
    一显示器,设置于该光学感测器之上。A display is arranged on the optical sensor.
  9. 一种光学感测器的制造方法,包括:A manufacturing method of an optical sensor includes:
    提供一基板,其中该基板包括多个感测像素;Providing a substrate, wherein the substrate includes a plurality of sensing pixels;
    在该基板之上形成一遮光材料层;Forming a light-shielding material layer on the substrate;
    提供一光罩于该遮光材料层的上方,该光罩具有一遮光图案;Providing a light shield above the light shielding material layer, the light shield having a light shielding pattern;
    以一准分子激光光源照射和扫描该光罩,以将该光罩上的该遮光图案转移至该遮光材料层,而形成一图案化遮光层,其中该图案化遮光层包含多个通孔,且多个所述通孔的位置对应多个所述感测像素的位置并暴露出多个所述感测像素;Irradiating and scanning the mask with an excimer laser light source to transfer the shading pattern on the mask to the shading material layer to form a patterned shading layer, wherein the patterned shading layer includes a plurality of through holes, And the positions of the plurality of through holes correspond to the positions of the plurality of sensing pixels and expose the plurality of sensing pixels;
    在该图案化遮光层之上形成一透明介质层,且该透明介质层覆盖多个所述感测像素;以及Forming a transparent medium layer on the patterned light-shielding layer, and the transparent medium layer covers a plurality of the sensing pixels; and
    在该透明介质层上形成一光导向层,且该光导向层包括多个导光件对应多个所述通孔,其中多个所述导光件引导一入射光穿透该透明介质层至多个所述通孔所露出的多个所述感测像素。A light guide layer is formed on the transparent medium layer, and the light guide layer includes a plurality of light guide members corresponding to a plurality of through holes, wherein the plurality of light guide members guide an incident light to penetrate the transparent medium layer at most A plurality of the sensing pixels exposed by the through holes.
  10. 如权利要求9所述的光学感测器的制造方法,其中该准分子激光光源为一线光源。9. The method of manufacturing an optical sensor according to claim 9, wherein the excimer laser light source is a line light source.
PCT/CN2020/087524 2019-10-03 2020-04-28 Optical sensor, optical sensing system, and method for manufacturing optical sensor WO2021062999A1 (en)

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