TW202247035A - Fingerprint sensing device - Google Patents

Abstract

A fingerprint sensing device includes a first substrate, a sensing element layer, a second substrate, a micro-structure layer and a spacer layer. The sensing element layer is disposed on the first substrate and includes a plurality of sensing elements. The second substrate is disposed on the sensing element layer. The micro-structure layer is disposed between the second substrate and the sensing element layer, and includes a plurality of micro-lens structures and a plurality of dummy structures, in which an orthogonal projection of the micro-lens structure on the first substrate is overlapped with an orthogonal projection of the sensing element on the first substrate. The spacer layer is disposed between the second substrate and the sensing element layer, and includes a plurality of main spacers, wherein each main spacer covers at least one dummy structure.

Description

Fingerprint Sensing Device

The present invention relates to a sensing device, and in particular to a fingerprint sensing device.

In order to construct a smart living environment, sensing technology has been widely used in various electronic devices. For example, devices such as mobile phones and electronic locks use fingerprint sensors to protect personal data security and access control. In terms of practical application requirements, the fingerprint sensor needs to be equipped with a light collimation design to overcome the problem of reflected light interference from adjacent peaks/valleys of the fingerprint. However, during the fingerprint pressing test, it was found that due to the uneven pressure of the fingers, the uneven air gap and the crushing of the micro lens are prone to occur, and these conditions will further cause the variation of the optical focus point Variations with the receiving angle lead to poor sensing resolution.

The invention provides a fingerprint sensing device with improved sensing resolution.

An embodiment of the present invention proposes a fingerprint sensing device, comprising: a first substrate; a sensing element layer located on the first substrate and including a plurality of sensing elements; a second substrate located on the sensing element layer; The structural layer is located between the second substrate and the sensing element layer, and includes a plurality of microlens structures and a plurality of dummy structures, wherein the orthographic projections of the plurality of microlens structures on the first substrate respectively overlap a plurality of sensing elements on the second substrate. an orthographic projection of a substrate; and a spacer layer, located between the second substrate and the sensing element layer, and comprising a plurality of main spacers, wherein each main spacer covers at least one dummy structure.

In an embodiment of the present invention, the above-mentioned microstructure layer and spacer layer are disposed on the first substrate.

In an embodiment of the present invention, the above-mentioned microstructure layer and spacer layer are disposed on the second substrate.

In an embodiment of the present invention, the height of the above-mentioned main spacers is greater than 10 μm.

In an embodiment of the present invention, the spacer layer further includes a plurality of countertops, and the main spacers are located between the countertops and the dummy structures.

In an embodiment of the present invention, the above spacer layer further includes a plurality of secondary spacers, each of which covers at least one dummy structure, and the height of the secondary spacers is smaller than that of the main spacers.

In an embodiment of the present invention, the spacer layer further includes a plurality of counters, and the main spacers and the auxiliary spacers are respectively located between the counters and the dummy structures.

In an embodiment of the present invention, the above-mentioned orthographic projection of the dummy structure on the first substrate is outside the orthographic projection of the sensing element on the first substrate.

In an embodiment of the present invention, the above-mentioned fingerprint sensing device further includes a light-shielding layer located between the sensing element layer and the microstructure layer.

In an embodiment of the present invention, the light-shielding layer has a plurality of openings, and the orthographic projections of the plurality of openings on the first substrate respectively overlap the orthographic projections of the plurality of sensing elements on the first substrate.

In an embodiment of the present invention, the above spacer layer further includes peripheral spacers.

An embodiment of the present invention proposes a fingerprint sensing device, comprising: a first substrate; a sensing element layer located on the first substrate and including a plurality of sensing elements; a second substrate located on the sensing element layer; The structural layer is located between the second substrate and the sensing element layer and includes multiple microlens structures and multiple dummy structures; and the spacer layer is located on one side of the microstructural layer and includes multiple main spacers and multiple The auxiliary spacers, wherein each main spacer and each auxiliary spacer respectively overlap at least one dummy structure, and the height of the auxiliary spacers is smaller than that of the main spacers.

In an embodiment of the present invention, the above-mentioned microstructure layer is disposed on the first substrate, and the spacer layer is disposed on the second substrate.

In an embodiment of the present invention, the above-mentioned microstructure layer is disposed on the second substrate, and the spacer layer is disposed on the first substrate.

In an embodiment of the present invention, the above-mentioned orthographic projections of the plurality of microlens structures on the first substrate respectively overlap the orthographic projections of the plurality of sensing elements on the first substrate.

In an embodiment of the present invention, the above-mentioned orthographic projection of the dummy structure on the first substrate is outside the orthographic projection of the sensing element on the first substrate.

In an embodiment of the present invention, the above-mentioned second substrate is a color filter substrate.

In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail together with the accompanying drawings.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Throughout the specification, the same reference numerals denote the same elements. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to physical and/or electrical connection. Furthermore, "electrically connected" or "coupled" may mean that other elements exist between two elements.

It should be understood that although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and and/or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first "element," "component," "region," "layer" or "section" discussed below could be termed a second element, component, region, layer or section without departing from the teachings herein.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" are intended to include plural forms including "at least one" or meaning "and/or" unless the content clearly dictates otherwise. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. It should also be understood that when used in this specification, the terms "comprising" and/or "comprising" designate the existence of said features, regions, integers, steps, operations, elements and/or parts, but do not exclude one or more Existence or addition of other features, regions, integers, steps, operations, elements, parts and/or combinations thereof.

Additionally, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe one element's relationship to another element as shown in the figures. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the figures. For example, if the device in one of the figures is turned over, elements described as being on the "lower" side of other elements would then be oriented on "upper" sides of the other elements. Thus, the exemplary term "below" can encompass both an orientation of "below" and "upper," depending on the particular orientation of the drawing. Similarly, if the device in one of the figures is turned over, elements described as "below" or "beneath" other elements would then be oriented "above" the other elements. Thus, the exemplary terms "below" or "beneath" can encompass both an orientation of above and below.

The terms "about," "approximately," or "substantially" as used herein include stated values and those within ordinary skill in the art, taking into account the measurements in question and the specific amount of error associated with the measurements (i.e., limitations of the measurement system). The average value within an acceptable range of deviation from a specified value as determined by a human being. For example, "about" can mean within one or more standard deviations, or within ±30%, ±20%, ±10%, ±5% of the stated value. Furthermore, "about", "approximately", or "substantially" used herein may select a more acceptable range of deviation or standard deviation based on optical properties, etching properties or other properties, and may not use one standard deviation to apply to all nature.

FIG. 1A is a schematic partial top view of a fingerprint sensing device 10 according to an embodiment of the present invention. Fig. 1B is a schematic cross-sectional view taken along the section line A-A' of Fig. 1A. FIG. 1C is an enlarged schematic view of area I of the fingerprint sensing device 10 in FIG. 1B . In order to make the expression of the drawing more concise, some components shown in FIG. 1B and FIG. 1C are omitted in FIG. 1A .

First, please refer to FIG. 1A to FIG. 1B at the same time. The fingerprint sensing device 10 includes: a first substrate SB1; a sensing element layer 110 located on the first substrate SB1 and including a plurality of sensing elements 112; a second substrate SB2, Located on the sensing element layer 110; the microstructure layer 120 is located between the second substrate SB2 and the sensing element layer 110, and includes a plurality of microlens structures LM and a plurality of dummy structures LD, wherein the plurality of microlens structures LM are placed on The orthographic projection of the first substrate SB1 overlaps the orthographic projections of the plurality of sensing elements 112 on the first substrate SB1 respectively; and the spacer layer 130 is located between the second substrate SB2 and the sensing element layer 110 and includes a plurality of main spacers SMa, wherein each main spacer SMa covers at least one dummy structure LD.

In the fingerprint sensing device 10 according to an embodiment of the present invention, by disposing a plurality of main spacers SMa on a plurality of dummy structures LD in the spacer layer 130, it is possible to maintain a stable distance between the spacer layer 130 and avoid The microlens structure LM is crushed, thereby improving the adjustment of the optical focus point and the light collection angle, so as to improve the sensing resolution of the fingerprint sensing device 10 .

Hereinafter, with reference to FIG. 1A to FIG. 1C , the implementation of each element of the fingerprint sensing device 10 will be continued to be described, but the present invention is not limited thereto.

In this embodiment, the first substrate SB1 of the fingerprint sensing device 10 may be a transparent substrate or an opaque substrate, and its material may be a ceramic substrate, a quartz substrate, a glass substrate, a polymer substrate or other suitable materials, but is not limited thereto. . The second substrate SB2 of the fingerprint sensing device 10 may be a transparent substrate, and its material may be a quartz substrate, a glass substrate, a polymer substrate or other suitable materials, but is not limited thereto.

In this embodiment, the sensing element layer 110 may include a plurality of sensing elements 112 and a planar layer PL1. For example, referring to FIG. 1C , the sensing element layer 110 may include the sensing element 112 and the planar layer PL1 , and the planar layer PL1 may include the planar layer PL1a and the planar layer PL1b. The sensing element 112 may be a visible light fingerprint sensing element or an invisible light fingerprint sensing element, such as an infrared light fingerprint sensing element. For example, the sensing element 112 may include an electrode E1, a sensing layer SR and an electrode E2, the sensing layer SR may be located between the electrode E1 and the electrode E2, and the electrode E2 may be located between the planar layer PL1a and the planar layer PL1b.

Specifically, the material of the electrode E1 may be molybdenum, aluminum, titanium, copper, gold, silver or other conductive materials, or an alloy combination or stack of two or more of the above materials. The material of the sensing layer SR may be Silicon-Rich Oxide (SRO), Silicon-Rich Oxide doped with Germanium, or other suitable materials. The material of the electrode E2 is preferably a transparent conductive material, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium gallium zinc oxide or other suitable oxides or at least two of the above Stack layers. The material of the planar layers PL1a and PL1b may include organic materials, such as acrylic materials, siloxane materials, polyimide materials, epoxy resin materials or a combination of the above materials. layer, but not limited to this.

Please refer to FIG. 1C , in some embodiments, the sensing element layer 110 may further include a plurality of switching elements TR, a gate insulating layer GI and an interlayer insulating layer IL, and the plurality of switching elements TR may be electrically connected to a plurality of sensing elements respectively. sensing elements 112 to individually control the operation of the sensing elements 112. For example, the switching element TR may be composed of a semiconductor layer CH, a gate GE, a source SE and a drain DE. The region where the semiconductor layer CH overlaps the gate GE can be regarded as the channel region of the switching element TR. The gate insulating layer GI is located between the gate GE and the semiconductor layer CH, and the interlayer insulating layer IL is located between the source SE and the gate GE and between the drain DE and the gate GE. The gate GE and the source SE can respectively receive signals from, for example, the driving element, and the electrode E1 of the sensing element 112 can be connected physically or electrically to the drain DE. When the gate GE receives a signal to turn on the switching element TR, the signal received by the source SE can be transmitted to the electrode E1 of the sensing element 112 through the drain DE.

For example, the material of the semiconductor layer CH may include silicon semiconductor material (such as polysilicon, amorphous silicon, etc.), oxide semiconductor material or organic semiconductor material, and the material of the gate GE, the source SE and the drain DE may include Metals with good electrical conductivity (such as aluminum, molybdenum, titanium, copper), alloys, or stacks of the above metals and/or alloys, but not limited thereto. Materials of the gate insulating layer GI and the interlayer insulating layer IL may include transparent insulating materials, such as silicon oxide, silicon nitride, silicon oxynitride, stacks of the above materials, or other suitable materials.

In this embodiment, the microstructure layer 120 of the fingerprint sensing device 10 can be disposed on the first substrate SB1, and the microlens structures LM and the dummy structures LD of the microstructure layer 120 can be arranged in an array on the sensing element. layer 110. In addition, the fingerprint sensing device 10 may further include a light shielding layer BM3, and the microlens structure LM and the dummy structure LD of the microstructure layer 120 may be disposed in the opening O3 of the light shielding layer BM3.

The orthographic projections of the microlens structure LM on the first substrate SB1 can respectively overlap the orthographic projections of the sensing elements 112 on the first substrate SB1 . Preferably, the central axis of the microlens structure LM can pass through the sensing layer SR. More preferably, the central axis of the microlens structure LM may overlap with the central axis of the sensing layer SR. The microlens structure LM may be a lens structure with a thicker center than an edge, such as a symmetrical biconvex lens, an asymmetric biconvex lens, a plano-convex lens or a concave-convex lens. The microlens structure LM can improve light collimation, avoid light leakage or light mixing caused by scattered light or refracted light, and reduce light loss.

Generally speaking, no sensing element 112 is disposed under the dummy structure LD. Therefore, the orthographic projection of the dummy structure LD on the first substrate SB1 may be outside the orthographic projection of the sensing element 112 on the first substrate SB1. That is to say, the sensing element 112 is disposed in a region outside the orthographic projection region of the dummy structure LD. The dummy structure LD and the microlens structure LM can have the same or different materials and shapes. For example, in this embodiment, the dummy structure LD can have the same material and shape as the microlens structure LM. However, in some embodiments, the dummy structure LD may have the same material as the microlens structure LM and have a different shape from the microlens structure LM. In some embodiments, the dummy structure LD may have a material different from that of the microlens structure LM, and have the same shape as the microlens structure LM. In some embodiments, the dummy structure LD may have a different material and a different shape from the microlens structure LM.

In this embodiment, the fingerprint sensing device 10 may further include light-shielding layers BM1, BM2 and flat layers PL2, PL3 located between the sensing element layer 110 and the microstructure layer 120, wherein the light-shielding layer BM1 is located on the sensing element layer 110 Between the planar layer PL2 and the planar layer PL2 , the light shielding layer BM2 is located between the planar layer PL2 and the planar layer PL3 , and the microlens structure LM and the dummy structure LD are located between the planar layer PL3 and the spacer layer 130 .

The light shielding layer BM1 may have a plurality of openings O1, and the orthographic projections of the openings O1 on the first substrate SB1 may respectively overlap the orthographic projections of the sensing elements 112 on the first substrate SB1. Likewise, the light shielding layer BM2 may have a plurality of openings O2, and the orthographic projections of the openings O2 on the first substrate SB1 may respectively overlap the orthographic projections of the sensing element 112 on the first substrate SB1. In some embodiments, the orthographic projection of the opening O1 on the first substrate SB1 may overlap the orthographic projection of the opening O2 on the first substrate SB1 and the orthographic projection of the microlens structure LM on the first substrate SB1 . In some embodiments, central axes of the openings O1 , O2 and the microlens structure LM may overlap. In this way, the openings O1 and O2 combined with the microlens structure LM can adjust the light receiving angle of the sensing element 112 , so as to realize the light collimation design.

The material of the light-shielding layers BM1 and BM2 may include light-shielding materials such as metal, metal oxide, black resin or graphite, or a laminate of the above-mentioned light-shielding materials. For example, in some embodiments, the light-shielding layer BM1 or the light-shielding layer BM2 may include a stack of a metal layer and a semi-transparent metal oxide layer, wherein the material of the metal layer may include a metal with good conductivity, such as aluminum, molybdenum, Titanium, copper, silver and other metals or their laminates, and the material of the semi-transparent metal oxide layer includes metal oxides that can reduce the reflectivity of the metal layer, such as molybdenum-tantalum oxide (MoTaOx) or molybdenum-niobium oxide (MoNbOx), etc. , but not limited to this. In addition, the material of the flat layers PL2 and PL3 may include organic materials or other suitable materials, such as acrylic materials, siloxane materials, polyimide materials, epoxy resins ) material or a laminate of the above materials.

In this embodiment, the main spacer SMa of the spacer layer 130 can be disposed on the first substrate SB1, and the main spacer SMa can respectively cover a dummy structure LD to form a microstructure layer 120 and the second substrate SB2. Stable gap GP. The material of the main spacer SMa may include acrylic material, but is not limited thereto. In some embodiments, the main spacer SMa can also include a photoinitiator, which can help to adjust the taper (taper) and film thickness of the main spacer SMa during exposure to meet the requirements of the main spacer SMa. Provide higher taper and height requirements.

In the following, other embodiments of the present invention are continued to be described using FIGS. 2A to 11D , and the element numbers and related contents of the embodiment in FIGS. 1A to 1C are used, wherein the same or similar elements are represented by the same numbers, and Descriptions of the same technical contents are omitted. For the description of omitted parts, reference may be made to the embodiment shown in FIG. 1A to FIG. 1C , which will not be repeated in the following description.

FIG. 2A is a schematic partial top view of a fingerprint sensing device 20 according to an embodiment of the present invention. Fig. 2B is a schematic cross-sectional view taken along the section line B-B' of Fig. 2A. The fingerprint sensing device 20 includes: a first substrate SB1; a sensing element layer 110 located on the first substrate SB1 and including a plurality of sensing elements 112 and a flat layer PL1; a second substrate SB2 located on the sensing element layer 110 The microstructure layer 120 is located between the second substrate SB2 and the sensing element layer 110, and includes a plurality of microlens structures LM and a plurality of dummy structures LD; and a spacer layer 130, located between the second substrate SB2 and the microstructure layer 120 between, and include a plurality of main spacers SMb. The fingerprint sensing device 20 further includes light-shielding layers BM1 , BM2 , BM3 and flat layers PL2 , PL3 located between the sensing element layer 110 and the spacer layer 130 .

Compared with the fingerprint sensing device 10 shown in FIGS. 1A to 1C , the fingerprint sensing device 20 shown in FIGS. 2A to 2B is different in that: the main spacer of the spacer layer 130 of the fingerprint sensing device 20 The SMb may be disposed between two adjacent dummy structures LD, and extend to a part of the surfaces of the two adjacent dummy structures LD. That is, the main spacer SMb may simultaneously cover a portion of two adjacent dummy structures LD. The main spacers SMb can maintain a stable distance between the spacer layers 130 while avoiding damage to the micro-lens structure LM, so as to improve the sensing resolution of the fingerprint sensing device 20 .

FIG. 3A is a schematic partial top view of a fingerprint sensing device 30 according to an embodiment of the present invention. Fig. 3B is a schematic cross-sectional view taken along the section line C-C' of Fig. 3A. The fingerprint sensing device 30 includes: a first substrate SB1; a sensing element layer 110 located on the first substrate SB1 and including a plurality of sensing elements 112 and a flat layer PL1; a second substrate SB2 located on the sensing element layer 110 The microstructure layer 120 is located between the second substrate SB2 and the sensing element layer 110, and includes a plurality of microlens structures LM and a plurality of dummy structures LD; and a spacer layer 130, located between the second substrate SB2 and the microstructure layer 120 between, and include a plurality of main spacers SMc. The fingerprint sensing device 30 further includes light-shielding layers BM1 , BM2 , BM3 and flat layers PL2 , PL3 located between the sensing element layer 110 and the spacer layer 130 .

Compared with the fingerprint sensing device 10 shown in FIGS. 1A to 1C , the fingerprint sensing device 30 shown in FIGS. 3A to 3B is different in that: the main spacer of the spacer layer 130 of the fingerprint sensing device 30 SMc can cover four adjacent dummy structures LD. The main spacers SMc can maintain a stable distance between the spacer layers 130 while avoiding damage to the micro-lens structure LM, so as to improve the sensing resolution of the fingerprint sensing device 30 .

FIG. 4A is a schematic partial top view of a fingerprint sensing device 40 according to an embodiment of the present invention. Fig. 4B is a schematic cross-sectional view taken along the section line D-D' of Fig. 4A. The fingerprint sensing device 40 includes: a first substrate SB1; a sensing element layer 110 located on the first substrate SB1 and including a plurality of sensing elements 112 and a flat layer PL1; a second substrate SB2 located on the sensing element layer 110 The microstructure layer 120 is located between the second substrate SB2 and the sensing element layer 110, and includes a plurality of microlens structures LM and a plurality of dummy structures LD; and a spacer layer 130 is located between the second substrate SB2 and the sensing element layer 110 and includes a plurality of main spacers SMd, wherein each main spacer SMa covers four dummy structures LD.

Compared with the fingerprint sensing device 30 shown in FIGS. 3A to 3B , the fingerprint sensing device 40 shown in FIGS. 4A to 4B is different in that: the microstructure layer 120 of the fingerprint sensing device 40, the spacer layer 130 and the light-shielding layer BM3 can be disposed on the second substrate SB2, and the main spacer SMd of the spacer layer 130 can be located between the dummy structure LD of the microstructure layer 120 and the sensing element layer 110, the light-shielding layers BM1, BM2 and the flat layer PL2 It may be located between the sensing element layer 110 and the main spacer SMd.

In this embodiment, the fingerprint sensing device 40 may further include an optical layer OC and a color conversion layer CT. The optical layer OC and the color conversion layer CT may be disposed on the second substrate SB2, wherein the color conversion layer CT may be located between the optical layer OC and the color conversion layer CT. Between the second substrate SB2 , and the optical layer OC may be located between the color conversion layer CT and the microstructure layer 120 . In this way, the second substrate SB2 can also serve as a color filter substrate.

In this embodiment, the height H1 of the main spacer SMd can be greater than 10 μm, such as 12 μm, 15 μm or 20 μm, so as to improve the light collimation effect provided by the light shielding layers BM1, BM2 and the microlens structure LM, while the main spacer The spacer SMd can keep the spacer layer 130 at a stable distance, so as to prevent the micro-lens structure LM from being crushed, and improve the sensing resolution of the fingerprint sensing device 40 .

FIG. 5A is a schematic partial top view of a fingerprint sensing device 50 according to an embodiment of the present invention. Fig. 5B is a schematic cross-sectional view taken along the section line E-E' of Fig. 5A. The fingerprint sensing device 50 includes: a first substrate SB1; a sensing element layer 110 located on the first substrate SB1 and including a plurality of sensing elements 112 and a flat layer PL1; a second substrate SB2 located on the sensing element layer 110 The microstructure layer 120 is located between the second substrate SB2 and the sensing element layer 110, and includes a plurality of microlens structures LM and a plurality of dummy structures LD; and a spacer layer 130 is located between the second substrate SB2 and the sensing element layer 110 and includes a plurality of main spacers SMe, wherein each main spacer SMe covers four dummy structures LD. The fingerprint sensing device 50 further includes light-shielding layers BM1 , BM2 , BM3 , a flat layer PL2 , an optical layer OC and a color conversion layer CT.

Compared with the fingerprint sensing device 40 shown in FIGS. 4A to 4B , the fingerprint sensing device 50 shown in FIGS. 5A to 5B is different in that: the spacer layer 130 of the fingerprint sensing device 50 also includes a plurality of Each of the sub-spacers SSa covers at least one dummy structure LD, and the height H2 of the sub-spacers SSa is smaller than the height H1 of the main spacers SMe.

In this embodiment, the sub-spacer SSa can cover the four dummy structures LD similarly to the main spacer SMe, so that the projected area of the sub-spacer SSa on the second substrate SB2 can be similar to or equal to that of the main spacer SMe on the second substrate. The projected area of SB2, but not limited thereto. In some embodiments, the sub-spacer SSa and the main spacer SMe may respectively cover one, two, three, six or more dummy structures LD, and the projected area of the sub-spacer SSa on the second substrate SB2 may be It is different from the projected area of the main spacer SMe on the second substrate SB2.

In this embodiment, the height H2 of the sub-spacer SSa is smaller than the height H1 of the main spacer SMe, so that there may be a distance D1 between the sub-spacer SSa and the light shielding layer BM2, and the sum of the height H2 and the distance D1 may be approximately or equal to height H1. The sub-spacer SSa can assist the spacer layer 130 to maintain a stable distance, and at the same time provide a proper pressing buffer space for the fingerprint sensing device 50 .

FIG. 6A is a schematic partial top view of a fingerprint sensing device 60 according to an embodiment of the present invention. Fig. 6B is a schematic cross-sectional view taken along the section line F-F' of Fig. 6A. The fingerprint sensing device 60 includes: a first substrate SB1; a sensing element layer 110 located on the first substrate SB1 and including a plurality of sensing elements 112 and a flat layer PL1; a second substrate SB2 located on the sensing element layer 110 The microstructure layer 120 is located between the second substrate SB2 and the sensing element layer 110, and includes a plurality of microlens structures LM and a plurality of dummy structures LD; and a spacer layer 130 is located between the second substrate SB2 and the sensing element layer 110, and includes a plurality of main spacers SMf, wherein each main spacer SMf covers four dummy structures LD. The fingerprint sensing device 60 further includes light-shielding layers BM1 , BM2 , BM3 , a planarization layer PL2 , an optical layer OC and a color conversion layer CT.

Compared with the fingerprint sensing device 40 shown in FIGS. 4A to 4B , the fingerprint sensing device 60 shown in FIGS. 6A to 6B is different in that: the spacer layer 130 of the fingerprint sensing device 60 also includes a plurality of The counter object BPa, and the main spacer SMf is located between the counter object BPa and the dummy structure LD.

In this embodiment, the projected area of the counter object BPa on the first substrate SB1 may be smaller than the projected area of the main spacer SMf on the first substrate SB1 , but it is not limited thereto. The countertop BPa can be arranged on the first substrate SB1, and the orthographic projection of the countertop BPa on the first substrate SB1 can overlap the orthographic projection of the main spacer SMf on the first substrate SB1, so that the countertop BPa and the main spacer SMf The distance between the spacer layers 130 can be abutted against each other to maintain a stable distance, and at the same time, the distance between the spacer layers 130 can be further increased to improve the light collimation effect, without being limited by the film thickness of the main spacer SMf.

FIG. 7A is a schematic partial top view of a fingerprint sensing device 70 according to an embodiment of the present invention. Fig. 7B is a schematic cross-sectional view taken along the section line G-G' of Fig. 7A. The fingerprint sensing device 70 includes: a first substrate SB1; a sensing element layer 110 located on the first substrate SB1 and including a plurality of sensing elements 112 and a flat layer PL1; a second substrate SB2 located on the sensing element layer 110 The microstructure layer 120 is located between the second substrate SB2 and the sensing element layer 110, and includes a plurality of microlens structures LM and a plurality of dummy structures LD; and a spacer layer 130 is located between the second substrate SB2 and the sensing element layer 110, and includes a plurality of main spacers SMg and secondary spacers SSb. The fingerprint sensing device 70 further includes light-shielding layers BM1 , BM2 , BM3 , a planarization layer PL2 , an optical layer OC and a color conversion layer CT.

Compared with the fingerprint sensing device 50 shown in FIGS. 5A to 5B , the fingerprint sensing device 70 shown in FIGS. 7A to 7B is different in that: the spacer layer 130 of the fingerprint sensing device 70 also includes a plurality of The counter object BPb, and the main spacer SMg and the sub spacer SSb are respectively located between the counter object BPb and the dummy structure LD. In addition, the projected area of the counter spacer BPb on the first substrate SB1 may be greater than the projected area of the main spacer SMg or the secondary spacer SSb on the first substrate SB1.

In this embodiment, the main spacer SMg and the secondary spacer SSb can respectively cover parts of two adjacent dummy structures LD, and the height H3 of the main spacer SMg is greater than the height H5 of the secondary spacer SSb, so that the secondary spacer There may be a distance D2 between the object SSb and the counter object BPb, and the sum of the height H5 and the distance D2 may be approximately or equal to the height H3. In addition, the counter object BPb may have a height H4 such that the spacer layer 130 may have an interval H3+H4. In this way, the counter spacer BPb and the main spacer SMg can abut against each other to maintain a stable distance between the spacer layers 130, and can provide a larger distance between the spacer layers 130. An appropriate press buffer space for the fingerprint sensing device 70 can be provided.

FIG. 8A is a schematic partial top view of a fingerprint sensing device 80 according to an embodiment of the present invention. Fig. 8B is a schematic cross-sectional view taken along the section line H-H' of Fig. 8A. The fingerprint sensing device 80 includes: a first substrate SB1; a sensing element layer 110 located on the first substrate SB1 and including a plurality of sensing elements 112 and a flat layer PL1; a second substrate SB2 located on the sensing element layer 110 The microstructure layer 120 is located between the second substrate SB2 and the sensing element layer 110, and includes a plurality of microlens structures LM and a plurality of dummy structures LD; and a spacer layer 130 is located on one side of the microstructure layer 120 (for example upper side), and includes multiple main spacers SMh and multiple secondary spacers SSc, wherein each main spacer SMh and each secondary spacer SSc respectively overlap at least one (for example, four) dummy structures LD, and the secondary spacers SSc The height H7 is smaller than the height H6 of the main spacer SMh.

Compared with the fingerprint sensing device 30 shown in FIGS. 3A to 3B , the fingerprint sensing device 80 shown in FIGS. 8A to 8B is different in that: the spacer layer 130 of the fingerprint sensing device 80 also includes a secondary gap SSc, and the main spacer SMh and the sub-spacer SSc of the spacer layer 130 are disposed on the second substrate SB2 without covering the dummy structure LD. In addition, in addition to the light-shielding layers BM1, BM2, BM3 and flat layers PL2, PL3, the fingerprint sensing device 80 also includes an optical layer OC and a color conversion layer CT located between the spacer layer 130 and the second substrate SB2, so that the second The substrate SB2 can be used as a color filter substrate.

In this embodiment, the height H7 of the secondary spacer SSc is smaller than the height H6 of the main spacer SMh, so that there may be a distance D3 between the secondary spacer SSc and the dummy structure LD, and the sum of the height H7 and the distance D3 may be approximately or equal to height H6. The main spacer SMh can abut against the dummy structure LD to maintain a stable distance between the spacer layers 130 , and the secondary spacer SSc can assist in maintaining a stable distance while providing a proper pressing buffer space for the fingerprint sensing device 80 .

FIG. 9A is a schematic partial top view of a fingerprint sensing device 90 according to an embodiment of the present invention. Fig. 9B is a schematic cross-sectional view taken along the section line J-J' of Fig. 9A. The fingerprint sensing device 90 includes: a first substrate SB1; a sensing element layer 110 located on the first substrate SB1 and including a plurality of sensing elements 112 and a flat layer PL1; a second substrate SB2 located on the sensing element layer 110 The microstructure layer 120 is located between the second substrate SB2 and the sensing element layer 110, and includes a plurality of microlens structures LM and a plurality of dummy structures LD; and a spacer layer 130 is located on one side of the microstructure layer 120 (for example lower side), and includes multiple main spacers SMj and multiple secondary spacers SSd, wherein each main spacer SMj and each secondary spacer SSd respectively overlap at least one (for example, four) dummy structures LD, and the secondary spacers SSd The height H9 of is smaller than the height H8 of the main spacer SMj. In addition, the fingerprint sensing device 90 may further include light-shielding layers BM1 , BM2 , BM3 , a flat layer PL2 , an optical layer OC, and a color conversion layer CT.

Compared with the fingerprint sensing device 50 shown in FIGS. 5A to 5B , the fingerprint sensing device 90 shown in FIGS. 9A to 9B is different in that: the main spacer of the spacer layer 130 of the fingerprint sensing device 90 The SMj and the sub-spacer SSd are disposed on the first substrate SB1 without covering the dummy structure LD, and the main spacer SMj can abut against the dummy structure LD to maintain a stable distance between the spacer layers 130, and the sub-spacer SSd can assist in maintaining a stable distance , while providing an appropriate press buffer space for the fingerprint sensing device 90 .

FIG. 10A is a schematic top view of a display device 100 including a fingerprint sensing device 10' according to an embodiment of the present invention. Fig. 10B is a schematic cross-sectional view taken along the section line K-K' of Fig. 10A. The display device 100 may include a display panel DP and a fingerprint sensing device 10', and the display device 100 may be, for example, a mobile phone with a fingerprint unlocking function.

Please refer to FIG. 10A and FIG. 10B at the same time. In this embodiment, the fingerprint sensing device 10' may have a sensing area AA and a peripheral area PA. The area II in FIG. 10A is located in the sensing area AA, and the enlarged schematic view of the area II It can be shown in Figure 8A. That is to say, the sensing area AA of the fingerprint sensing device 10' may have a structure as shown in FIG. 8B, and the fingerprint sensing device 10' may include a first substrate SB1, a sensing element layer 110, The light shielding layer BM1, the flat layer PL2, the light shielding layer BM2, the flat layer PL3, the light shielding layer BM3, the microstructure layer 120, the spacer layer 130, the optical layer OC, the color conversion layer CT and the second substrate SB2.

In addition, a schematic cross-sectional view of the peripheral area PA of the fingerprint sensing device 10' can be shown in FIG. 10B . In this embodiment, the spacer layer 130 of the fingerprint sensing device 10' may further include a peripheral spacer SEa located in the peripheral area PA, and the microstructure layer 120 may also include a dummy structure LE located in the peripheral area PA, wherein the dummy structure The shapes of the LE and the microlens structure LM can be different, and the peripheral spacer SEa and the dummy structure LE can abut against each other, so that a stable distance can be maintained between the optical layer OC or the second substrate SB2 and the microlens structure LM.

In some embodiments, the fingerprint sensing device 10' can be any one of the aforementioned fingerprint sensing device 10 to fingerprint sensing device 90. For example, FIG. 1A, FIG. 2A, FIG. 3A, FIG. 4A, FIG. 5A, FIG. 6A, FIG. 7A and FIG. 9A may be enlarged schematic diagrams of area II in FIG. 10A, and the peripheral area PA of the fingerprint sensing device 10' It may have a structure as shown in FIG. 1B, FIG. 2B, FIG. 3B, FIG. 4B, FIG. 5B, FIG. 6B, FIG. 7B or FIG. 9B.

In this embodiment, as shown in FIG. 10A , the peripheral spacer SEa may present a single-layer rectangular top-view profile, but it is not limited thereto. 11A to 11D are schematic top views of peripheral spacers SEb, SEc, SEd, and SEe of a fingerprint sensing device according to an embodiment of the present invention, respectively. In some embodiments, as shown in FIG. 11A , the perimeter spacer SEb may exhibit a multi-layer rectangular top-view profile. In some embodiments, as shown in FIG. 11B , the peripheral spacer SEc may present a top-view profile with multiple layers interlaced. In some embodiments, as shown in FIG. 11C , the peripheral spacer SEd may present a top-view outline of a combination of multiple figures. In some embodiments, as shown in FIG. 11D , the peripheral spacer SEe may present a mesh-like top-view profile. The peripheral spacers SEa, SEb, SEc, SEd, SEe can enhance the structural support of the fingerprint sensing device, so as to maintain a stable spacer layer spacing.

To sum up, the fingerprint sensing device of the present invention can avoid the damage of the microlens structure by setting the main spacer on the dummy structure, and at the same time keep the distance between the spacer layers stable, thereby stabilizing the control of the receiving angle and optical focusing. Therefore, the sensing resolution of the fingerprint sensing device is improved. In addition, the fingerprint sensing device of the present invention can assist in maintaining a stable distance between the spacer layers by setting the auxiliary spacer, and at the same time provide a proper press buffer space for the fingerprint sensing device. In addition, the fingerprint sensing device of the present invention can further increase the distance between the spacer layers by setting the counter object, thereby improving the light collimation effect.

Although the present invention has been disclosed above with the embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field may make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention should be defined by the scope of the appended patent application.

10, 10', 20, 30, 40, 50, 60, 70, 80, 90: fingerprint sensing device 110: sensing element layer 112: sensing element 120: microstructure layer 130: spacer layer A-A', BB', C-C', D-D', E-E', F-F', G-G', H-H', J-J', K-K': hatching AA: sensing area BM1, BM2, BM3: shading layer BPa, BPb: counterparts CH: semiconductor layer CT: color conversion layer D1, D2, D3: Spacing DE: drain DP: display panel E1, E2: electrodes GE: Gate GI: gate insulating layer GP: gap H1, H2, H3, H4, H5, H6, H7, H8, H9: Height I, II: area LD, LE: dummy structure IL: interlayer insulating layer LM: microlens structure O1, O2, O3: opening OC: optical layer PA: Peripheral Area PL1, PL1a, PL1b, PL2, PL3: Planarization layer SB1: first substrate SB2: second substrate SE: source SEa, SEb, SEc, SEd, SEe: peripheral spacers SMa, SMb, SMc, SMd, SMe, SMf, SMg, SMh, SMj: main spacers SR: sensing layer SSa, SSb, SSc, SSd: secondary spacers TR: switching element

FIG. 1A is a schematic partial top view of a fingerprint sensing device 10 according to an embodiment of the present invention. Fig. 1B is a schematic cross-sectional view taken along the section line A-A' of Fig. 1A. FIG. 1C is an enlarged schematic view of area I of the fingerprint sensing device 10 in FIG. 1B . FIG. 2A is a schematic partial top view of a fingerprint sensing device 20 according to an embodiment of the present invention. Fig. 2B is a schematic cross-sectional view taken along the section line B-B' of Fig. 2A. FIG. 3A is a schematic partial top view of a fingerprint sensing device 30 according to an embodiment of the present invention. Fig. 3B is a schematic cross-sectional view taken along the section line C-C' of Fig. 3A. FIG. 4A is a schematic partial top view of a fingerprint sensing device 40 according to an embodiment of the present invention. Fig. 4B is a schematic cross-sectional view taken along the section line D-D' of Fig. 4A. FIG. 5A is a schematic partial top view of a fingerprint sensing device 50 according to an embodiment of the present invention. Fig. 5B is a schematic cross-sectional view taken along the section line E-E' of Fig. 5A. FIG. 6A is a schematic partial top view of a fingerprint sensing device 60 according to an embodiment of the present invention. Fig. 6B is a schematic cross-sectional view taken along the section line F-F' of Fig. 6A. FIG. 7A is a schematic partial top view of a fingerprint sensing device 70 according to an embodiment of the present invention. Fig. 7B is a schematic cross-sectional view taken along the section line G-G' of Fig. 7A. FIG. 8A is a schematic partial top view of a fingerprint sensing device 80 according to an embodiment of the present invention. Fig. 8B is a schematic cross-sectional view taken along the section line H-H' of Fig. 8A. FIG. 9A is a schematic partial top view of a fingerprint sensing device 90 according to an embodiment of the present invention. Fig. 9B is a schematic cross-sectional view taken along the section line J-J' of Fig. 9A. FIG. 10A is a schematic top view of a display device 100 including a fingerprint sensing device 10' according to an embodiment of the present invention. Fig. 10B is a schematic cross-sectional view taken along the section line K-K' of Fig. 10A. 11A to 11D are schematic top views of peripheral spacers SEb, SEc, SEd, and SEe of a fingerprint sensing device according to an embodiment of the present invention, respectively.

10: Fingerprint sensing device

110: sensing element layer

112: sensing element

120: microstructure layer

130: spacer layer

BM1, BM2, BM3: shading layer

GP: gap

I: area

LD: dummy structure

LM: microlens structure

O1, O2, O3: opening

PL1, PL2, PL3: flat layer

SB1: first substrate

SB2: second substrate

SMa: main spacer

Claims (17)

A fingerprint sensing device, comprising: first substrate; a sensing element layer, located on the first substrate, and including a plurality of sensing elements; a second substrate located on the sensing element layer; The microstructure layer is located between the second substrate and the sensing element layer, and includes a plurality of microlens structures and a plurality of dummy structures, wherein the orthographic projection of the plurality of microlens structures on the first substrate respectively superimposing the orthographic projections of the plurality of sensing elements on the first substrate; and The spacer layer is located between the second substrate and the sensing element layer, and includes a plurality of main spacers, wherein each of the main spacers covers at least one of the dummy structures. The fingerprint sensing device according to claim 1, wherein the microstructure layer and the spacer layer are disposed on the first substrate. The fingerprint sensing device according to claim 1, wherein the microstructure layer and the spacer layer are disposed on the second substrate. The fingerprint sensing device according to claim 1, wherein the height of the main spacer is greater than 10 μm. The fingerprint sensing device according to claim 1, wherein the spacer layer further includes a plurality of counters, and the main spacer is located between the counters and the dummy structure. The fingerprint sensing device according to claim 1, wherein the spacer layer further includes a plurality of secondary spacers, each of which covers at least one of the dummy structures, and the height of the secondary spacers is smaller than the The height of the main spacer. The fingerprint sensing device according to claim 6, wherein the spacer layer further includes a plurality of counters, and the main spacers and the auxiliary spacers are respectively located between the counters and the dummy structure between. The fingerprint sensing device as claimed in claim 1, wherein the orthographic projection of the dummy structure on the first substrate is outside the orthographic projection of the sensing element on the first substrate. The fingerprint sensing device according to claim 1, further comprising a light-shielding layer located between the sensing element layer and the microstructure layer. The fingerprint sensing device according to claim 9, wherein the light-shielding layer has a plurality of openings, and the orthographic projections of the plurality of openings on the first substrate respectively overlap the plurality of sensing elements on the second substrate Orthographic projection of a substrate. The fingerprint sensing device as claimed in claim 1, wherein the spacer layer further includes peripheral spacers. A fingerprint sensing device, comprising: first substrate; a sensing element layer, located on the first substrate, and including a plurality of sensing elements; a second substrate located on the sensing element layer; a microstructure layer located between the second substrate and the sensing element layer, and includes a plurality of microlens structures and a plurality of dummy structures; and The spacer layer is located on one side of the microstructure layer and includes a plurality of main spacers and a plurality of auxiliary spacers, wherein each of the main spacers and each of the auxiliary spacers overlaps at least one of the dummy structures, And the height of the secondary spacer is smaller than the height of the main spacer. The fingerprint sensing device as claimed in claim 12, wherein the microstructure layer is disposed on the first substrate, and the spacer layer is disposed on the second substrate. The fingerprint sensing device according to claim 12, wherein the microstructure layer is disposed on the second substrate, and the spacer layer is disposed on the first substrate. The fingerprint sensing device according to claim 12, wherein the orthographic projections of the plurality of microlens structures on the first substrate respectively overlap the orthographic projections of the plurality of sensing elements on the first substrate. The fingerprint sensing device as claimed in claim 15, wherein the orthographic projection of the dummy structure on the first substrate is outside the orthographic projection of the sensing element on the first substrate. The fingerprint sensing device as claimed in claim 12, wherein the second substrate is a color filter substrate.

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