TW200828459A - Method of packaging micro sensor - Google Patents

Method of packaging micro sensor Download PDF

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Publication number
TW200828459A
TW200828459A TW95148858A TW95148858A TW200828459A TW 200828459 A TW200828459 A TW 200828459A TW 95148858 A TW95148858 A TW 95148858A TW 95148858 A TW95148858 A TW 95148858A TW 200828459 A TW200828459 A TW 200828459A
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TW
Taiwan
Prior art keywords
micro
sensing
sacrificial layer
sacrificial
substrate
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TW95148858A
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Chinese (zh)
Inventor
Hou-Chang Kuo
Wei-Te Chu
Lin-Hsin Chen
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Int Semiconductor Tech Ltd
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Priority to TW95148858A priority Critical patent/TW200828459A/en
Publication of TW200828459A publication Critical patent/TW200828459A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8592Applying permanent coating, e.g. protective coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • H01L2924/1815Shape

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Micromachines (AREA)

Abstract

A method of packaging micro sensor is disclosed. First, providing a substrate. Then, depositing a plurality of first micro sensors and second micro sensors to a surface of the substrate, each of the first micro sensors has a first active surface, a first back surface and a first sacrificial layer, each of the second micro sensors has a second active surface, a second back surface and a second sacrificial layer, a first sensor region is formed on the first active surface and the first sensor region is covered by the first sacrificial layer, and the first sacrificial layer has a sidewall, a second sensor region is formed on the second active surface and the second sensor region is covered by the second sacrificial layer. Next, the substrate is electrically connected to the first micro sensors and the second micro sensors by a plurality of bonding wires. Finally, forming a sealant on the surface of the substrate to seal the first micro sensors, the second micro sensors and the bonding wires, it can improve the reliability and void by the sidewalls of the sacrificial layers.

Description

200828459 九、發明說明: 【發明所屬之技術領域】 本發明係有關於—種封裝方法,特別係有關於 種微 感測器封裝方法 【先前技術】 習知微感測器(如酒精感測器或氣體感測器)為了提古 感測靈敏度,其感測元件或相材料大都直接裸露於夕^ 以利與待測介質快速接觸反應,且為了降低微感測器之製 作成本,習知微感測器之感測元件或感測材料以外的電性 元件(如銲線、銲球、銲墊或凸塊)也會裸露於外,以簡化 製程及降低成本,因此該些電性元件未進行任何密封保 濩,極易因受潮氧化、碰撞或震動而出現短路,導致微感 測器之可靠度大幅降低。然而,若要對該些電性元件進行 密封保護,除了必須克服密封膠會污染感測元件或感測材 料的問題外,亦須防止在密封過程(如轉移成型製程; Transfer Molding)中出現短射(short sh〇t)、包封(air 或氣洞(void)等不良現象。此外,半導體封裝製程造中為 了保護銲線或凸塊,會於打線或凸塊接合完成後填充一密 封膠以密封銲線或凸塊,但是形成密封膠之過程中,密封 膠之流動速率不平均常造成氣泡回包之現象產生,因而影 響封裝產品之可靠度,降低封裝產品之良率。 【發明内容】 本發明之主要目的係在於提供一種微感測器封裝方 法’設置複數個第一微感測元件及複數個第二微感測元件 200828459 於一基板之一表面,每一第一 母弟碳感測兀件係具有一第一主 苐一背面及一第一犧牲層, 係具有一第二主 一 母弟一破感測兀件 _ ± y 一月面及一第二犧牲層,該第 第一竭 #感測區,該第-犧牲層係覆蓋該 弟 感,則區,且該第一饍扭JS总曰士 + & 犧牲層係具有一導流側壁,該第- 主動面係形成有一第 只第一 - β、日丨广 Θ弟一犧牲層係覆蓋該第 二=:::!,以複數個鲜線電性連接該基板與該些第 =:件與該些第二微感測元件;最後,形成一密封 膠於a基板之該表面,藉由誃此 m 、 μ二第一犧牲層之該些導流側 土,以利該密封膠密封該4b第一 一弟彳政感測7〇件、該些第二微 感而7G件與該些銲線, 可靠度。 方止軋泡堆積並提高封裝構造之 、,?卷明之一種微感測器封裝方法係包含下列步 #百先提供—基板,該基板係具有H接著,設置 禝數個第一微感測元 者°又置 及锼數個苐二微感測元件於該基 攸之该表面,每一篦_與成、Bf — — 母弟姣感測兀件係具有一第一主動面、 弟一背面及一第一犧牲層,每— _ 母弟一破感測7C件係具有 弟一主動面、一第二背 一 一 φ # ^^ 苐一犧牲層,該第一主動 卸係升/成有一第一感測區, 说^ « 忒第一犧牲層係覆蓋該第一感 列£,且該第一犧牲層俜呈 把 係具有一導流側壁,該第二主動面 係形成有一第二感測區,兮 ^弟一犧牲層係覆蓋該第二感測 ^,之後,形成複數個銲線以雷 、, 干琛以電性連接該基板與該些第一 破感測元件與該些第二感 " ,最後,形成一密封膠於 邊基板之該表面,藉由該此 一弟犧牲層之該些導流側壁, 200828459 以利該密封膠密封該些第 元件與該些銲線。 一微感測元件 該些第二微感測 【實施方式】 请參閱第1A至1H圖,佑姑丄 ΰ依據本發明之一具體實施例係 揭示一種微感測器封裝方法,普止 你 百无’請參閱第1Α圖,楹 供一基板110,該基板110係 軚 ^ 衣面111,接者,請表 閱第1B圖’設置複數個第_曰 似弟日日片11與複數個第二晶片12 於該基板之該表面1U,該此第一 a —罘 日日片11係具有複數個第 一表面11 a,該些第二晶^[孫 — 曰曰月係具有禝數個第二表面12a,接 著,請參閱第1C圖,形忐一樣M^ 成犧牲材20於該些第一晶片11 之該些第一表面1 i a、該此筐—曰 二第一曰日片 12之該些第二表面 12a與該基板11G之該表面lu,接著,請參㈣圖, 對該犧牲材20進行曝光顯影步驟,以形成複數個設置於 該基板之該表面之第—微感測元件12 G及第二微感測元件 13〇,該些第一微感剛元件120與該些第二微感測元件13〇 係呈.矩陣排列。每一第一微感測元件】2〇係具有一第一主 動面121、一第~背面122及一第一犧牲層123,每一第 二微感測元件130係具有一第二主動面131、一第二背面 132及一第二犧牲層133,該些第一晶片u之該些第一表 面11 a係為該些第一微感測元件1 20之該些第一主動面 121 ’該些第二晶片1 2之該些第二表面12a係為該些第二 微感測兀件1 3 0之該些第二主動面丨3 1,該些第一微感測 兀件120與該些第二微感測元件130係以該些第一背面 122與该些第二背面132黏設於該基板110之該表面in, 200828459 。玄第主動面1 2 1係形成有一第一感測區1 24,該第一犧 牲層123係覆蓋該第一感測區124,該第二主動面係 形成有-第二感測區134,該第二犧牲層133係覆蓋該第 二感測區134,該第一犧牲層123與該第二犧牲層133係 用以保護該第一感測區124與該第二感測區134,避免該 第一感測區124與該第二感測區134於封裝製程中受到污 染。此外,該第一犧牲層123與該第二犧牲層133也可以 網版印刷方式形成於該第一感測^ 124與該第二感測區 1 3 4。忒些第一感測區丨24與該些第二感測區1 3 4係可設 置有感測器,且該些第一犧牲層123與該些第二犧牲層133 係可用以保護該些第一感測區124與該些第二感測區 134。之後,請參閱第1E圖,形成複數個銲線14〇以電性 連接該基板110與該些第一微感測元件12〇與該些第二微 感利元件1 3 0接著,凊參閱第1 ρ圖,形成一密封膠1 $ 〇 於該基板110之該表面m,在本實施例中,該密封膠15〇 係以壓模式封膠製程所形成,以密封該些第一微感測元件 120、该些第二微感測元件丨3 〇與該些銲線i 4〇,該密封膠 150之高度係平齊於該些第一犧牲層123與該些第二犧牲 層133。本發明係藉由該些第一犧牲層123之該些導流側 壁125,以利該密封膠15〇密封該些第一微感測元件12〇、 該些第二微測元件130與該些銲線14〇,其係可防止短射 (sh〇rt shot)、包封(air trap)或氣洞(v〇id)等不良現象之發 生’並提咼封裝構造可靠度。之後,請參閱第1G圖,移 除該些第一犧牲層123與該些第二犧牲層133,以顯露該 200828459 些第一感測區1 24盥該此篦-忒:目ιΐ P 1。/1 ”為二弟一感測£ 134,使該些第一感 測區124與該些第二❹㈣134彳直接與待測介質接觸反 應’如此可應用於手機’使手機具有感測酒精、溫度或溼 度之功能。該些第一犧牲層123與該些第二犧牲層Η]之 材質係可選自於光阻或感光性高分子,移除該些;一犧牲 層123與該些第二犧牲層133之方法係可為乾㈣、濕触 刻或紫外光照射。最後,請參閱第出圖,切割該基板ιι〇 以形成複數個單離之封裝件。 、此外,請參閱第2A至2D圖,其係為該些第一微機電 感測元件120與該些第二微機電感測元件13〇之另一種形 成方法,首先,請參閱第2八圖,提供一晶圓1〇,該晶圓 w係包含有該些第un與該些第二晶片12,接著, ^參閱第⑸圖,形成該犧牲材2〇於該”―晶片以 ^些第一表面14與該些第二晶片12之該些第二表面 ,接著,請參閱第2C圖,對該犧牲材20進行曝^顯 一 V驟以形成該些第一微機電感測元件120與該此第二 妓機電感測元# 130,其中該些第-微機電感測元件12〇 之該些第一犧牲層123與該些第二微機電感測 該4b第-禮“ p 丨十之 —罘一犧牲層133之形狀係為幾何圖形,該此 Μ 1 〇 0 二罘一犧牲 9 /、該些第二犧牲層133係可呈圓形狀、#|圓# 多邊形此4 仰圃形狀或 /狀,其中該些第一犧牲層i 23與該歧第_ 之彤to总 一乐—犧牲層133 夕狀係可為相同或不相同。請參閱第3圖, 中,哕此钕 术口在本實施例 夕 μ二第一微感測元件120之該些第一犧牲層123 夕邊形狀,且每一第一犧牲層123係具有一導流側壁12弘 10 200828459 該導流側壁125係為弧狀側壁或斜向, ^ ,士- /、 jJb^i 犧牲層123之該些導錢壁125係為斜向㈣且^: 犧牲層123係為菱形’該些第二犧牲層⑴係為圓^ 者,請參閱第4圖,在另一實施例中,該些第-犧牲二 與該些第二犧牲層133係可呈相同形狀,其係皆呈多曰 狀,最後,請參閱第2D圖,切割琴曰 ^ 口』Θ日日0 10以單離該此 一微感測元件U0與該些第二微感測元件13〇。 一 或者,請參閱第2A,至2D,圖,首先,請參閱第2A, 圖,形成該犧牲材20於該些第—表φ⑴與該些第一表 面心,之後,請參閱第2B,圖,進行晶圓切割^㈣單 離形成有犧牲# 20之該些第一晶片u與該些第 12’接著,請參閱第2C,圖,設置形成有犧牲層2〇二 第-晶片u與該些第二晶#12於該基板UQ之: 111,最後,請參閱第2D,圖,對 口対4犧牲材20進行曝光顯 影步驟’以形成該此第 /Μ | _ —弟檨感測疋件120與該些第二 測元件㈣。由上述可知,該些第—微感測元#i2〇j 些第二微感測元件13〇係具有多種形成方法。 一 此外如第5圖所示,該基板11〇之該表面"I係可 :設置有複數個第三微感測元件16Q,該些第三微感測元 160之主動面(圖未緣出)係覆蓋有複數個第三犧牲層 161 ’該些第三犧牲層161係可呈圓形狀 : 邊形狀,在本實施例中,哕此签-禮从鹿/狀^夕 μ二第_犧牲層1 6 1係呈橢圓形 狀0 【圖式簡單說明】 11 200828459 第1A至1Η圖:依據本發明之一具體實施例,一種微感 ♦ 測器封裝方法之截面示意圖。 . 第2Α至2D圖:本發明之微感測元件製程之截面示意圖。 第2A’至2D’圖:本發明之微感測元件之另一種製程之截 面示意圖。 第 3 圖:一基板上設置有複數個第一微感測元件 及複數個第二微感測元件之上視圖。 第 4 圖:該基板上之該些微感測元件係為同一種 之上視圖。 第 5 圖:該基板上設置有該些第一微感測元件、 該些第二微感測元件及複數個第三微感 測元件之上視圖。 【主要元件符號說明】 10 晶圓 11 第一晶片 11 a第一表面 12 第二晶片 I 2 a第二表面 20 犧牲材 II 0基板 111表面 120第一微感測元件 121第一主動面 122第一背面 123第一犧牲層 124第一感測區 125導流側壁 130第二微感測元件 131第二主動面 132第二背面 133第二犧牲層 134第二感測區 140銲線 150密封膠 160第三微感測元件 161第三犧牲層 12200828459 IX. Description of the invention: [Technical field of the invention] The present invention relates to a packaging method, in particular to a micro-sensor packaging method [Prior Art] A conventional micro-sensor (such as an alcohol sensor) Or gas sensor) In order to improve the sensitivity of sensing, most of its sensing elements or phase materials are directly exposed to the instant to facilitate rapid contact reaction with the medium to be tested, and in order to reduce the manufacturing cost of the micro-sensor, The sensing elements or sensing elements other than the sensing materials (such as solder wires, solder balls, pads or bumps) are also exposed to simplify the process and reduce the cost. Therefore, the electrical components are not Any sealing and sealing is very easy to short-circuit due to moisture oxidation, collision or vibration, resulting in a significant reduction in the reliability of the micro-sensor. However, in order to seal the electrical components, in addition to the need to overcome the problem that the sealant may contaminate the sensing component or the sensing material, it is also necessary to prevent shortness in the sealing process (such as transfer molding process; Transfer Molding). Shooting (short sh〇t), encapsulation (air or void) (void). In addition, in order to protect the wire or bump, the semiconductor package process will fill a sealant after wire bonding or bump bonding. In order to seal the wire or the bump, but in the process of forming the sealant, the flow rate of the sealant unevenly causes the bubble to be returned, which affects the reliability of the packaged product and reduces the yield of the packaged product. The main purpose of the present invention is to provide a micro-sensor packaging method for setting a plurality of first micro-sensing elements and a plurality of second micro-sensing elements 200828459 on one surface of a substrate, each of the first mother carbon. The sensing element has a first main back and a first sacrificial layer, and has a second main and a young one, a broken sensing element _ ± y moon face and a second sacrificial layer The first exhaustion #sensing zone, the first sacrificial layer covers the young sense, the zone, and the first meal twist JS total gentleman + & sacrificial layer has a flow guiding side wall, the first - The active surface system is formed with a first first-β, a 丨 丨 Θ 一 一 a sacrificial layer covering the second =:::!, the plurality of fresh wires are electrically connected to the substrate and the first: a second micro-sensing element; finally, a sealant is formed on the surface of the a substrate, by using the m, μ, and the first sacrificial layer of the first lateral sacrificial layer to seal the 4b One-to-one brother-in-law senses 7 pieces, these second micro-sensing and 7G pieces and these wire bonds, reliability. To stop the rolling accumulation and improve the package structure, a kind of micro-sensor package The method comprises the following steps: providing a substrate, the substrate having H, then setting a plurality of first micro-sensing elements, and setting a plurality of second micro-sensing elements on the surface of the substrate Each _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The sensing 7C component has a first active surface and a second back one φ # ^^ 牺牲 a sacrificial layer, and the first active unloading system is raised/formed into a first sensing area, said ^ « 忒 first sacrificial layer Covering the first sense, and the first sacrificial layer has a guide sidewall, the second active surface is formed with a second sensing region, and the sacrificial layer covers the second Sensing ^, afterwards, forming a plurality of bonding wires to be polished, and electrically connecting the substrate and the first broken sensing elements and the second senses, and finally, forming a sealant on the edge substrate The surface is formed by the sealing sidewalls of the sacrificial layer, 200828459, to seal the first component and the bonding wires. A micro-sensing element, the second micro-sensing [embodiment] Please refer to FIGS. 1A to 1H. According to an embodiment of the present invention, the present invention discloses a micro-sensor packaging method. No, please refer to the first drawing, for a substrate 110, the substrate 110 is 軚^ the clothing surface 111, and then, please refer to Figure 1B's setting of a plurality of _曰似弟日日片11 and plural The second wafer 12 is on the surface 1U of the substrate, and the first a-day solar film 11 has a plurality of first surfaces 11 a, and the second crystals have a number of The second surface 12a, then, referring to FIG. 1C, the first surface 1 ia of the first wafer 11 is formed as the sacrificial material 20, and the first and second wafers 12 of the first wafer 11 are The second surface 12a and the surface of the substrate 11G are lu. Next, referring to FIG. 4, the sacrificial material 20 is subjected to an exposure and development step to form a plurality of first micro sensing elements disposed on the surface of the substrate. 12 G and the second micro-sensing element 13 〇, the first micro-sensing element 120 and the second micro-sensing elements 13 are in a matrix arrangement. Each of the first micro sensing elements has a first active surface 121 , a first back surface 122 , and a first sacrificial layer 123 . Each of the second micro sensing elements 130 has a second active surface 131 . a first back surface 132 and a second sacrificial layer 133. The first surfaces 11 a of the first micro-sensors 1 are the first active surfaces 121 ′ of the first micro-sensing elements 1 20 The second surface 12a of the second micro-discs 1 2 is the second active surface 丨 3 1 of the second micro-sensing elements 110, and the first micro-sensing elements 120 and the The second micro-sensing elements 130 are adhered to the surface of the substrate 110 by the first back surface 122 and the second back surfaces 132, 200828459. The first active layer 12 is formed with a first sensing region 124. The first sacrificial layer 123 covers the first sensing region 124, and the second active surface is formed with a second sensing region 134. The second sacrificial layer 133 covers the second sensing region 134, and the first sacrificial layer 123 and the second sacrificial layer 133 are used to protect the first sensing region 124 and the second sensing region 134 from The first sensing region 124 and the second sensing region 134 are contaminated in the packaging process. In addition, the first sacrificial layer 123 and the second sacrificial layer 133 may also be formed in the first sensing portion 124 and the second sensing region 134 by screen printing. The first sensing region 丨 24 and the second sensing regions 134 may be provided with sensors, and the first sacrificial layer 123 and the second sacrificial layers 133 may be used to protect the The first sensing area 124 and the second sensing areas 134. Thereafter, referring to FIG. 1E, a plurality of bonding wires 14 are formed to electrically connect the substrate 110 and the first micro sensing elements 12 and the second micro sensing elements 1 3 0. 1 ρ, forming a sealant 1 〇 on the surface m of the substrate 110. In the embodiment, the sealant 15 is formed by a pressure mode sealing process to seal the first micro-sensing The component 120, the second micro-sensing component 丨3 〇 and the bonding wires i 4 , the height of the sealing paste 150 is flush with the first sacrificial layer 123 and the second sacrificial layers 133 . In the present invention, the flow guiding sidewalls 125 of the first sacrificial layers 123 are used to seal the first micro sensing elements 12 , the second micro sensing elements 130 and the sealing adhesive 15 . The wire is 14 turns, which prevents the occurrence of undesirable phenomena such as short shots, air traps or air holes (v〇id) and improves the reliability of the package structure. After that, referring to FIG. 1G, the first sacrificial layer 123 and the second sacrificial layers 133 are removed to expose the first sensing region of the 200828459 to the first sensing region. /1 ” for the second brother, a sense of £ 134, so that the first sensing area 124 and the second 四 (four) 134 彳 directly contact with the medium to be tested reacted 'so applicable to the mobile phone' so that the mobile phone has the feeling of alcohol, temperature The function of the first sacrificial layer 123 and the second sacrificial layer 可] may be selected from a photoresist or a photosensitive polymer, and the sacrificial layer 123 and the second layer are removed. The method of the sacrificial layer 133 may be dry (four), wet-touch or ultraviolet light irradiation. Finally, please refer to the figure, the substrate is cut to form a plurality of individual packages. In addition, please refer to the 2A to 2D diagram, which is another method for forming the first microcomputer inductance measuring component 120 and the second microcomputer inductance sensing component 13 ,, first, please refer to FIG. The wafer w includes the second and the second wafers 12, and then, referring to the figure (5), the sacrificial material 2 is formed on the first wafer 14 and the second surface The second surfaces of the wafer 12, and then, referring to FIG. 2C, the sacrificial material 20 is exposed to a V Forming the first microcomputer-inductance measuring component 120 and the second-sampling-inducting component #130, wherein the first-micro-device sensing component 12 is configured by the first sacrificial layer 123 and the second micro- The inductance of the machine is measured by the shape of the 4b - 礼 p p 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 133 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 Shape, #|圆# Polygon This is a 4th shape or a shape, wherein the first sacrificial layer i 23 and the 第 彤 总 总 总 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 牺牲 。 。 。 。 。 。. Referring to FIG. 3, in the embodiment, the first sacrificial layer 123 of the first micro-sensing element 120 is in the shape of the first sacrificial layer 123, and each of the first sacrificial layers 123 has a Diversion side wall 12 Hong 10 200828459 The flow guiding side wall 125 is an arc-shaped side wall or oblique direction, ^, the - -, jJb^i sacrificial layer 123 of the money guiding wall 125 is oblique (four) and ^: sacrificial layer 123 is a diamond shape. The second sacrificial layer (1) is a circle. Referring to FIG. 4, in another embodiment, the first sacrificial layer and the second sacrificial layer 133 are In the same shape, the lines are multi-shaped. Finally, please refer to Figure 2D, cutting the piano 曰 口 Θ 0 0 0 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 Element 13〇. Or, please refer to 2A, 2D, Fig., first, please refer to FIG. 2A, FIG. 2, forming the sacrificial material 20 on the first table φ(1) and the first surface centers, and then, see 2B, FIG., performing wafer dicing ^ (4) singulation forming the first wafer u with the sacrificial # 20 and the 12th'', then referring to the 2C, the figure is provided with the sacrificial layer 2 〇 - The wafer u and the second crystals #12 are on the substrate UQ: 111. Finally, please refer to FIG. 2D, and the exposure and development step of the sacrificial material 4 is performed to form the first / Μ | _ - 檨The sensing element 120 and the second measuring elements (4) are sensed. It can be seen from the above that the second micro-sensing elements 13i have some forming methods. In addition, as shown in FIG. 5, the surface of the substrate 11 can be provided with a plurality of third micro sensing elements 16Q, and the active surfaces of the third micro sensing elements 160 The first sacrificial layer 161 is covered with a plurality of third sacrificial layers 161. The third sacrificial layers 161 can have a circular shape: an edge shape, in this embodiment, the sign is from the deer / shape ^ 夕μ二第The sacrificial layer 161 has an elliptical shape 0 [Simplified description of the drawing] 11 200828459 1A to 1A: A schematic cross-sectional view of a micro-inductor packaging method according to an embodiment of the present invention. Fig. 2 to 2D are schematic cross-sectional views showing the process of the micro sensing element of the present invention. 2A' to 2D' are schematic cross-sectional views showing another process of the micro-sensing element of the present invention. Figure 3: A top view of a plurality of first micro-sensing elements and a plurality of second micro-sensing elements disposed on a substrate. Figure 4: The micro-sensing elements on the substrate are in the same top view. FIG. 5 is a top view of the substrate on which the first micro sensing elements, the second micro sensing elements, and the plurality of third micro sensing elements are disposed. [Main component symbol description] 10 wafer 11 first wafer 11 a first surface 12 second wafer I 2 a second surface 20 sacrificial material II 0 substrate 111 surface 120 first micro sensing element 121 first active surface 122 a back surface 123 first sacrificial layer 124 first sensing region 125 guiding sidewall 130 second micro sensing element 131 second active surface 132 second back surface 133 second sacrificial layer 134 second sensing region 140 bonding wire 150 sealing glue 160 third micro sensing element 161 third sacrificial layer 12

Claims (1)

200828459 十、申請專利範圍·· 一種微感測器封裝方法,其係包含· 提供一基板,該基板係具有一表s: 設置複數個第—微制元件個 件於該基板之該表面,每— 一微感測元 笙 +如 微感測元件伤且女 弟一主動面、一第一背面及_ 件係具有一 微感測元件传且右 窟 牲層,每一第二 什你具有一第一主動面、一 二犧牲層’該第一主動面係形成 :背面及-第 第-犧牲層係覆蓋該第一感測區感測區’該 具有-導流側壁,該第二主動面係形:::牲層係 區,該第二犧牲層係覆蓋該第二感測區;—感測 形成複數個銲線以電性連接該基板與該 測元件與該些第二微感測元件;以及—弟锨感 形成一密封膠於該基板之該表 ^ 、 猎由礒些第一犧铋 曰之该些導流側壁,以利該密封膠密封該此 ^ 測元件、該些第二微感測元件與該些銲線=一微感 2、如申請專利範圍帛丄項所述之微感㈣器封裝方法,並 中该些導流側壁係為孤狀側壁。 /、 、如申請專利範圍第丨項所述之微感測 』我方法,其 中該些導流侧壁係為斜向侧壁。 一 4、 如申請專利範圍第1項所述之微感測器 』衣方法,其 另包含有:移除該些第一犧牲層與該些第_ /、 一^ m牲層, 以顯露該些第一感測區與該些第二感測區。 5、 如申請專利範圍第1項所述之微感測器封裝方法,直 13 200828459 另包含有:切割該基板以形成複數個單離之封裝件。 6、 如申請專利範圍第1頊所述之微感測器封裝方法,其 另包含有: 提供一晶圓,該晶圓係包含有複數個第一晶片與複數 個第二晶片,每一第〆晶片係具有一第一表面,每一 弟一晶片係具有一第二表面, 形成一犧牲材於該些第/表面與該些第二表面; 對該犧牲材進行曝光顯影步驟,以形成該些第一微感 測元件與該些第二微感測元件;以及 切割該晶圓以單離該些第一微感測元件與該些第二 微感測元件。 7、 如申請專利範圍第1頊所述之微感测器封裝方法,其 另包含有: 提供一晶圓,該晶圓係包含有複數個第一晶片與複數 個第二晶片,每一第一晶片係具有一第一表面,每一 第二晶片係具有一第二表面; 形成一犧牲材於該些第一表面與該些第二表面; 切割該晶圓以單離形成有犧牲材之該些第一晶片與 該些第二晶片; 設置該些第一晶片與該些第二晶片於該基板之該表 面;以及 對該犧牲材進行曝光顯影步驟,以形成該些第一微感 測元件與該些第二微感測元件。 8、 如申請專利範圍第1項所述之微感測器封裝方法,其 14 200828459 另包含有: 設置複數個第一晶片與複數個第二晶片於該基板之 該表面,每一第一晶片係具有一第一表面,每一第二 晶片係具有一第二表面; 形成一犧牲材於該些第一表面、該些第二表面與該基 板之该表面;以及 對该犧牲材進行曝光顯影步驟,以形成該些第一微感 測元件與該些第二微感測元件。 9、如申请專利範圍第1項所述之微感測器封裝方法,其 中該些第一感測區與該些第二感測區係設置有感測 器。 1 〇、如申請專利範圍第1項所述之微感測器封裝方法,其 中該些第一犧牲層係可呈圓形狀、橢圓形狀或多邊形 狀。 11、如申請專利範圍第1項戶斤述之微感測器封裝方法,其 中該些第二犧牲層係玎裏圓形狀、橢圓形狀或多邊形 狀。 1 2、如申請專利範圍第丨項所述之微感測器封裝方法,該 些第一犧牲層與該些第二犧牲層係呈相同形狀。 1 3、如申請專利範圍第1項所述之被感測器封裝方法,该 些第一犧牲層與該些第二犧牲層係呈不相同形狀。 1 4、如申請專利範圍第i頊所述之微感測器封裝方法,其 中該些第一微感測元件與該些第二微感測元件係呈 矩陣排列。 200828459 1 5、如申請專利範圍第丨頊所述之微感測器封裝方法,其 中該密封膠之高度係平齊於該些第一犧牷層與該此 第—犧牲層。 1 6、如申請專利範圍第1項所述之微感測器封裝方法,其 中該些第一犧牲層與該些第二犧牲層之材質係選自 於光阻或感光性高分子。 1 7、如申請專利範圍第1項所述之微感測器封裝方法,其 中該些第一犧牲層與該些第二犧牲層之移除方法係 為乾蝕刻、濕蝕刻或紫外光照射。 18、 如申請專利範圍第1項所述之微感測器封裝方法,其 另包含有:設置複數個第三微感測元件於該基板之該 表面’該些第三微感測元件係覆蓋有複數個第三犧牲 層。 19、 如申睛專利範圍第1 8項所述之微機電感測器封裝方 法’其中歸些第三犧牲層係呈圓形狀、橢圓形狀或多 邊形狀。 16200828459 X. Patent Application Scope · A micro-sensor packaging method, comprising: providing a substrate having a table s: setting a plurality of first-micro components on the surface of the substrate, each — A micro-sensing element 笙+ such as a micro-sensing component is injured and the younger one has an active surface, a first back and a _ piece with a micro-sensing element and a right-wing layer, each second you have one a first active surface, a first sacrificial layer, the first active surface is formed: a back surface and a first-sacrificial layer covering the first sensing region sensing region, the having a guiding sidewall, the second active surface a system::: a layer of the layer, the second sacrificial layer covers the second sensing region; - sensing forming a plurality of bonding wires to electrically connect the substrate with the measuring component and the second micro sensing The component; and the 锨 形成 形成 形成 形成 形成 形成 形成 形成 形成 形成 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The two micro-sensing components and the bonding wires=one micro-sensing 2, as claimed in the patent scope帛丄The micro-inductance (four) device packaging method, wherein the side walls of the flow guiding are isolated sidewalls. /, , as in the micro-sensing described in the scope of the patent application, the method, wherein the side walls of the flow are oblique sidewalls. The micro sensor housing method of claim 1, further comprising: removing the first sacrificial layer and the _ /, a m m layer to reveal the Some first sensing regions and the second sensing regions. 5. The micro-sensor packaging method of claim 1, wherein the method further comprises: cutting the substrate to form a plurality of isolated packages. 6. The micro-sensor packaging method of claim 1, further comprising: providing a wafer comprising a plurality of first wafers and a plurality of second wafers, each of The wafer has a first surface, each of the wafers has a second surface, and a sacrificial material is formed on the surface/surface and the second surface; and the sacrificial material is subjected to an exposure and development step to form the The first micro sensing element and the second micro sensing elements; and cutting the wafer to separate the first micro sensing elements from the second micro sensing elements. 7. The micro-sensor packaging method of claim 1, further comprising: providing a wafer comprising a plurality of first wafers and a plurality of second wafers, each of a wafer has a first surface, each of the second wafers has a second surface; a sacrificial material is formed on the first surface and the second surfaces; and the wafer is cut to form a sacrificial material The first wafer and the second wafers; the first wafer and the second wafers are disposed on the surface of the substrate; and the exposure material is subjected to an exposure and development step to form the first micro-sensing The component and the second micro sensing elements. 8. The micro-sensor packaging method of claim 1, wherein the method further comprises: setting a plurality of first wafers and a plurality of second wafers on the surface of the substrate, each of the first wafers Having a first surface, each second wafer has a second surface; forming a sacrificial material on the first surface, the second surface and the surface of the substrate; and exposing and developing the sacrificial material Steps to form the first micro sensing elements and the second micro sensing elements. 9. The micro-sensor packaging method of claim 1, wherein the first sensing region and the second sensing regions are provided with sensors. 1 . The micro-sensor packaging method of claim 1, wherein the first sacrificial layers are in a circular shape, an elliptical shape or a polygonal shape. 11. The microsensor packaging method of claim 1, wherein the second sacrificial layer has a round shape, an elliptical shape or a polygonal shape. The micro-sensor packaging method as described in claim 2, wherein the first sacrificial layers and the second sacrificial layers have the same shape. The sensor package method of claim 1, wherein the first sacrificial layer and the second sacrificial layer have different shapes. The micro-sensor packaging method of claim 1, wherein the first micro-sensing elements and the second micro-sensing elements are arranged in a matrix. The method of claim 4, wherein the height of the sealant is flush with the first sacrificial layer and the first sacrificial layer. The micro-sensor packaging method of claim 1, wherein the first sacrificial layer and the second sacrificial layer are selected from a photoresist or a photosensitive polymer. The micro-sensor packaging method according to claim 1, wherein the first sacrificial layer and the second sacrificial layer are removed by dry etching, wet etching or ultraviolet light. 18. The micro-sensor packaging method of claim 1, further comprising: providing a plurality of third micro-sensing elements on the surface of the substrate. There are a plurality of third sacrificial layers. 19. The microcomputer-based inductor package method as described in claim 18, wherein the third sacrificial layer has a circular shape, an elliptical shape or a polygonal shape. 16
TW95148858A 2006-12-25 2006-12-25 Method of packaging micro sensor TW200828459A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103249287A (en) * 2012-02-04 2013-08-14 广达电脑股份有限公司 Mold-sealed radio frequency electromagnetic shielding structure with selective electromagnetic shielding and forming method thereof
TWI785792B (en) * 2021-05-18 2022-12-01 友達光電股份有限公司 Dual sensing device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103249287A (en) * 2012-02-04 2013-08-14 广达电脑股份有限公司 Mold-sealed radio frequency electromagnetic shielding structure with selective electromagnetic shielding and forming method thereof
TWI473241B (en) * 2012-02-04 2015-02-11 Quanta Comp Inc Molded rf structure with selective electromagnetic shielding and forming method thereof
CN103249287B (en) * 2012-02-04 2016-04-13 广达电脑股份有限公司 Mold-sealed radio frequency electromagnetic shielding structure with selective electromagnetic shielding and forming method thereof
TWI785792B (en) * 2021-05-18 2022-12-01 友達光電股份有限公司 Dual sensing device

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