TWI785792B - Dual sensing device - Google Patents

Dual sensing device Download PDF

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TWI785792B
TWI785792B TW110133883A TW110133883A TWI785792B TW I785792 B TWI785792 B TW I785792B TW 110133883 A TW110133883 A TW 110133883A TW 110133883 A TW110133883 A TW 110133883A TW I785792 B TWI785792 B TW I785792B
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layer
sensing element
sensing
substrate
dual
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TW110133883A
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TW202247431A (en
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王碩宏
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友達光電股份有限公司
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Priority to CN202210199865.XA priority Critical patent/CN114582904A/en
Priority to US17/739,208 priority patent/US11710339B2/en
Priority to DE102022204878.4A priority patent/DE102022204878A1/en
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Abstract

A dual sensing device includes a first substrate, a first sensing element layer and a second sensing element layer. The first sensing element layer is disposed on the first substrate and includes a plurality of first sensing elements. The second sensing element layer is disposed on the first sensing element layer and includes a plurality of second sensing elements, wherein an orthogonal projection of the second sensing element on the first substrate is overlapped with an orthogonal projection of the first sensing element on the first substrate.

Description

雙感測裝置Dual Sensing Device

本發明是有關於一種感測裝置，且特別是有關於一種雙感測裝置。The present invention relates to a sensing device, and in particular to a dual sensing device.

為了提供建構智慧生活環境所需的資訊，各式感測器已廣泛應用於日常生活中，例如，用於感測指紋、靜脈圖像、心率、血氧濃度等生物特徵的各式光學感測器。由於各式感測器的使用需求日益增加，將各式感測器整合、進而以單機提供多種感測功能將是未來應用的趨勢。然而，不同感測器的結構不盡相同，如何簡化多感測器的整合結構仍是相關業者尋求改進的目標之一。In order to provide the information needed to build a smart living environment, various sensors have been widely used in daily life, for example, various optical sensors for sensing biological characteristics such as fingerprints, vein images, heart rate, blood oxygen concentration, etc. device. Due to the increasing demand for the use of various sensors, it will be a future application trend to integrate various sensors and provide multiple sensing functions with a single machine. However, different sensors have different structures, and how to simplify the integrated structure of multiple sensors is still one of the goals for relevant industry players to seek improvement.

本發明提供一種雙感測裝置，具有簡化的整合結構。The present invention provides a dual sensing device with a simplified integrated structure.

本發明的一個實施例提出一種雙感測裝置，包括：第一基板；第一感測元件層，位於第一基板上，且包括多個第一感測元件；以及第二感測元件層，位於第一感測元件層上，且包括多個第二感測元件，其中第二感測元件於第一基板的正投影重疊第一感測元件於第一基板的正投影。An embodiment of the present invention proposes a dual sensing device, comprising: a first substrate; a first sensing element layer located on the first substrate and including a plurality of first sensing elements; and a second sensing element layer, It is located on the first sensing element layer and includes a plurality of second sensing elements, wherein the orthographic projection of the second sensing element on the first substrate overlaps the orthographic projection of the first sensing element on the first substrate.

在本發明的一實施例中，上述的第一感測元件為可見光感測元件。In an embodiment of the present invention, the above-mentioned first sensing element is a visible light sensing element.

在本發明的一實施例中，上述的第一感測元件為指紋感測元件。In an embodiment of the present invention, the above-mentioned first sensing element is a fingerprint sensing element.

在本發明的一實施例中，上述的雙感測裝置還包括遮光層，位於第一感測元件上且具有開口，第一感測元件包括感測層，且開口於第一基板的正投影重疊感測層於第一基板的正投影。In an embodiment of the present invention, the above-mentioned dual-sensing device further includes a light-shielding layer located on the first sensing element and having an opening, the first sensing element includes a sensing layer, and the opening is on the orthographic projection of the first substrate The orthographic projection of the superimposed sensing layer on the first substrate.

在本發明的一實施例中，上述的雙感測裝置還包括光角控制層，位於第一感測元件上，且光角控制層於第一基板的正投影重疊第一感測元件於第一基板的正投影。In an embodiment of the present invention, the above-mentioned dual sensing device further includes an optical angle control layer located on the first sensing element, and the orthographic projection of the optical angle control layer on the first substrate overlaps the first sensing element on the first sensing element. Orthographic projection of a substrate.

在本發明的一實施例中，上述的光角控制層為第二感測元件的電極。In an embodiment of the present invention, the above-mentioned optical angle control layer is an electrode of the second sensing element.

在本發明的一實施例中，上述的第二感測元件為紅外光感測元件。In an embodiment of the present invention, the above-mentioned second sensing element is an infrared light sensing element.

在本發明的一實施例中，上述的第一感測元件及第二感測元件為不同波長之不可見光感測元件。In an embodiment of the present invention, the above-mentioned first sensing element and the second sensing element are invisible light sensing elements with different wavelengths.

在本發明的一實施例中，上述的第二感測元件為有機光電二極體。In an embodiment of the present invention, the above-mentioned second sensing element is an organic photodiode.

在本發明的一實施例中，上述的有機光電二極體包括電子傳輸層、電洞傳輸層以及位於電子傳輸層與電洞傳輸層之間的光敏層，且光敏層位於電子傳輸層與第一基板之間。In one embodiment of the present invention, the above-mentioned organic photodiode includes an electron transport layer, a hole transport layer, and a photosensitive layer located between the electron transport layer and the hole transport layer, and the photosensitive layer is located between the electron transport layer and the second hole transport layer. between a substrate.

在本發明的一實施例中，上述的雙感測裝置還具有開口區，且第一感測元件及第二感測元件位於開口區之外。In an embodiment of the present invention, the above-mentioned dual sensing device further has an opening area, and the first sensing element and the second sensing element are located outside the opening area.

在本發明的一實施例中，上述的雙感測裝置還包括第一開關元件，位於第一基板上，且電性連接第一感測元件。In an embodiment of the present invention, the above-mentioned dual sensing device further includes a first switch element located on the first substrate and electrically connected to the first sensing element.

在本發明的一實施例中，上述的雙感測裝置還包括第二基板，其中第二感測元件層位於第二基板與第一感測元件層之間。In an embodiment of the present invention, the above-mentioned dual sensing device further includes a second substrate, wherein the second sensing element layer is located between the second substrate and the first sensing element layer.

在本發明的一實施例中，上述的雙感測裝置還包括第二開關元件，位於第二感測元件層與第二基板之間，且電性連接第二感測元件。In an embodiment of the present invention, the above-mentioned dual sensing device further includes a second switch element located between the second sensing element layer and the second substrate and electrically connected to the second sensing element.

在本發明的一實施例中，上述的雙感測裝置還包括光源，位於第一基板上與第一感測元件層相對的一側。In an embodiment of the present invention, the above-mentioned dual sensing device further includes a light source located on the side of the first substrate opposite to the first sensing element layer.

為讓本發明的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail together with the accompanying drawings.

在附圖中，為了清楚起見，放大了層、膜、面板、區域等的厚度。在整個說明書中，相同的附圖標記表示相同的元件。應當理解，當諸如層、膜、區域或基板的元件被稱為在另一元件「上」或「連接到」另一元件時，其可以直接在另一元件上或與另一元件連接，或者中間元件可以也存在。相反地，當元件被稱為「直接在另一元件上」或「直接連接到」另一元件時，不存在中間元件。如本文所使用的，「連接」可以指物理及/或電性連接。再者，「電性連接」或「耦合」可為二元件間存在其它元件。In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Throughout the specification, the same reference numerals denote the same elements. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to physical and/or electrical connection. Furthermore, "electrically connected" or "coupled" may mean that other elements exist between two elements.

應當理解，儘管術語「第一」、「第二」、「第三」等在本文中可以用於描述各種元件、部件、區域、層及/或部分，但是這些元件、部件、區域、層及/或部分不應受這些術語的限制。這些術語僅用於將一個元件、部件、區域、層或部分與另一個元件、部件、區域、層或部分區分開。因此，下面討論的第一「元件」、「部件」、「區域」、「層」或「部分」可以被稱為第二元件、部件、區域、層或部分而不脫離本文的教導。It should be understood that although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and and/or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first "element," "component," "region," "layer" or "section" discussed below could be termed a second element, component, region, layer or section without departing from the teachings herein.

這裡使用的術語僅僅是為了描述特定實施例的目的，而不是限制性的。如本文所使用的，除非內容清楚地指示，否則單數形式「一」、「一個」和「該」旨在包括複數形式，包括「至少一個」或表示「及/或」。如本文所使用的，術語「及/或」包括一個或多個相關所列項目的任何和所有組合。還應當理解，當在本說明書中使用時，術語「包含」及/或「包括」指定所述特徵、區域、整體、步驟、操作、元件及/或部件的存在，但不排除一個或多個其它特徵、區域、整體、步驟、操作、元件、部件及/或其組合的存在或添加。The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" are intended to include plural forms including "at least one" or meaning "and/or" unless the content clearly dictates otherwise. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. It should also be understood that when used in this specification, the terms "comprising" and/or "comprising" designate the existence of said features, regions, integers, steps, operations, elements and/or parts, but do not exclude one or more Existence or addition of other features, regions, integers, steps, operations, elements, parts and/or combinations thereof.

此外，諸如「下」或「底部」和「上」或「頂部」的相對術語可在本文中用於描述一個元件與另一元件的關係，如圖所示。應當理解，相對術語旨在包括除了圖中所示的方位之外的裝置的不同方位。例如，如果一個附圖中的裝置翻轉，則被描述為在其他元件的「下」側的元件將被定向在其他元件的「上」側。因此，示例性術語「下」可以包括「下」和「上」的取向，取決於附圖的特定取向。類似地，如果一個附圖中的裝置翻轉，則被描述為在其它元件「下」或「下方」的元件將被定向為在其它元件「上方」。因此，示例性術語「下」或「下方」可以包括上方和下方的取向。Additionally, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe one element's relationship to another element as shown in the figures. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the figures. For example, if the device in one of the figures is turned over, elements described as being on the "lower" side of other elements would then be oriented on "upper" sides of the other elements. Thus, the exemplary term "below" can encompass both an orientation of "below" and "upper," depending on the particular orientation of the drawing. Similarly, if the device in one of the figures is turned over, elements described as "below" or "beneath" other elements would then be oriented "above" the other elements. Thus, the exemplary terms "below" or "beneath" can encompass both an orientation of above and below.

圖1是依照本發明一實施例的雙感測裝置10的剖面示意圖。雙感測裝置10包括：第一基板110；第一感測元件層120，位於第一基板110上，且包括多個第一感測元件S1；以及第二感測元件層130，位於第一感測元件層120上，且包括多個第二感測元件S2，其中第二感測元件S2於第一基板110的正投影重疊第一感測元件S1於第一基板110的正投影。FIG. 1 is a schematic cross-sectional view of a dual sensing device 10 according to an embodiment of the invention. The dual sensing device 10 includes: a first substrate 110; a first sensing element layer 120 located on the first substrate 110 and including a plurality of first sensing elements S1; and a second sensing element layer 130 located on the first The sensing element layer 120 includes a plurality of second sensing elements S2 , wherein the orthographic projection of the second sensing element S2 on the first substrate 110 overlaps the orthographic projection of the first sensing element S1 on the first substrate 110 .

在本發明的一實施例的雙感測裝置10中，藉由使第一感測元件S1於第一基板110的正投影部分重疊或完全重疊第二感測元件S2於第一基板110的正投影，能夠簡化雙感測裝置10的整合結構，同時增大雙感測裝置10的開口區OA。以下，配合圖1繼續說明雙感測裝置10的各個元件的實施方式，但本發明不以此為限。In the dual-sensing device 10 according to an embodiment of the present invention, by making the orthographic projection of the first sensing element S1 on the first substrate 110 partially overlap or completely overlap the orthographic projection of the second sensing element S2 on the first substrate 110 The projection can simplify the integrated structure of the dual sensing device 10 while increasing the opening area OA of the dual sensing device 10 . Hereinafter, the implementation of each element of the dual sensing device 10 will be continuously described with reference to FIG. 1 , but the present invention is not limited thereto.

在本實施例中，第一基板110可以是透明基板或不透明基板，其材質可以是陶瓷基板、石英基板、玻璃基板、高分子基板或其他適當材質，但不限於此。In this embodiment, the first substrate 110 may be a transparent substrate or an opaque substrate, and its material may be a ceramic substrate, a quartz substrate, a glass substrate, a polymer substrate or other suitable materials, but is not limited thereto.

在本實施例中，第一感測元件層120可以包括多個第一感測元件S1、平坦層PL2、絕緣層I4以及遮光層SH，其中第一感測元件S1可以是可見光感測元件，例如指紋感測元件，但不以此為限。舉例而言，第一感測元件S1可以包括電極E11、感測層SR以及電極E12，感測層SR位於電極E11與電極E12之間，且電極E12可以位於平坦層PL2與絕緣層I4之間。遮光層SH可以位於第一感測元件S1上且具有開口O1，開口O1於第一基板110的正投影可以重疊感測層SR於第一基板110的正投影，以調控感測層SR的收光範圍。在一些實施例中，第一感測元件S1可以是不可見光感測元件。In this embodiment, the first sensing element layer 120 may include a plurality of first sensing elements S1, a flat layer PL2, an insulating layer I4, and a light-shielding layer SH, wherein the first sensing element S1 may be a visible light sensing element, For example, a fingerprint sensing element, but not limited thereto. For example, the first sensing element S1 may include an electrode E11, a sensing layer SR and an electrode E12, the sensing layer SR is located between the electrode E11 and the electrode E12, and the electrode E12 may be located between the planar layer PL2 and the insulating layer I4 . The light-shielding layer SH can be located on the first sensing element S1 and has an opening O1. The orthographic projection of the opening O1 on the first substrate 110 can overlap the orthographic projection of the sensing layer SR on the first substrate 110, so as to regulate the absorption of the sensing layer SR. light range. In some embodiments, the first sensing element S1 may be an invisible light sensing element.

舉例而言，電極E11的材質可以是鉬、鋁、鈦、銅、金、銀或其他導電材料、或上述兩種以上之材料的合金組合或堆疊。感測層SR的材質可以是富矽氧化物（Silicon-Rich Oxide，SRO）、摻雜鍺之富矽氧化物或其他合適的材料。電極E12的材質較佳為透明導電材料，例如銦錫氧化物、銦鋅氧化物、鋁錫氧化物、鋁鋅氧化物、銦鎵鋅氧化物或其他合適的氧化物或者是上述至少二者之堆疊層。平坦層PL2的材質可以包括有機材料，例如壓克力(acrylic)材料、矽氧烷(siloxane)材料、聚醯亞胺(polyimide)材料、環氧樹脂(epoxy)材料或上述材料的疊層，但不限於此。絕緣層I4的材質可以包括透明的絕緣材料，例如氧化矽、氮化矽、氮氧化矽、上述材料的疊層或其他適合的材料。遮光層SH的材質可以包括金屬、金屬氧化物、金屬氮氧化物、黑色樹脂或石墨等材料、或上述材料之堆疊，但不限於此。For example, the material of the electrode E11 can be molybdenum, aluminum, titanium, copper, gold, silver or other conductive materials, or an alloy combination or stack of two or more of the above materials. The material of the sensing layer SR may be Silicon-Rich Oxide (SRO), Silicon-Rich Oxide doped with Germanium, or other suitable materials. The material of the electrode E12 is preferably a transparent conductive material, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium gallium zinc oxide or other suitable oxides or at least two of the above Stack layers. The material of the flat layer PL2 may include organic materials, such as acrylic material, siloxane material, polyimide material, epoxy material or a laminate of the above materials, But not limited to this. The material of the insulating layer I4 may include a transparent insulating material, such as silicon oxide, silicon nitride, silicon oxynitride, a stack of the above materials, or other suitable materials. The material of the light-shielding layer SH may include materials such as metal, metal oxide, metal oxynitride, black resin or graphite, or a stack of the above materials, but is not limited thereto.

在本實施例中，雙感測裝置10還可以包括位於第一感測元件層120與第一基板110之間的驅動電路層DL1。驅動電路層DL1可以包括雙感測裝置10需要的元件或線路，例如驅動元件、開關元件、電源線、驅動訊號線、時序訊號線、檢測訊號線等等。舉例而言，可以利用薄膜沉積製程、微影製程以及蝕刻製程來形成驅動電路層DL1，且驅動電路層DL1可以包括主動元件陣列，其中主動元件陣列可以包括排列成陣列的多個第一開關元件T1，且多個第一開關元件T1分別電性連接多個第一感測元件S1。In this embodiment, the dual sensing device 10 may further include a driving circuit layer DL1 located between the first sensing element layer 120 and the first substrate 110 . The driving circuit layer DL1 may include elements or circuits required by the dual sensing device 10 , such as driving elements, switching elements, power lines, driving signal lines, timing signal lines, detection signal lines, and the like. For example, the driving circuit layer DL1 can be formed by using a thin film deposition process, a lithography process and an etching process, and the driving circuit layer DL1 can include an active element array, wherein the active element array can include a plurality of first switching elements arranged in an array T1, and the plurality of first switching elements T1 are respectively electrically connected to the plurality of first sensing elements S1.

具體而言，驅動電路層DL1可以包括第一開關元件T1、緩衝層I1、閘極絕緣層I2、層間絕緣層I3以及平坦層PL1。第一開關元件T1可以由半導體層CH1、閘極GE1、源極SE1與汲極DE1所構成。半導體層CH1重疊閘極GE1的區域可視為第一開關元件T1的通道區。閘極絕緣層I2位於閘極GE1與半導體層CH1之間，層間絕緣層I3設置在源極SE1與閘極GE1之間以及汲極DE1與閘極GE1之間。閘極GE1及源極SE1可分別接收來自例如驅動元件的訊號，且第一感測元件S1的電極E11可以通過平坦層PL1中的通孔VA1電性連接汲極DE1。舉例而言，當閘極GE1接收訊號而開啟第一開關元件T1時，可使源極SE1接收的訊號通過汲極DE1傳遞至第一感測元件S1的電極E11。在其他實施例中，驅動電路層DL1還可以視需要包括更多的絕緣層以及導電層。Specifically, the driving circuit layer DL1 may include a first switching element T1, a buffer layer I1, a gate insulating layer I2, an interlayer insulating layer I3, and a planarization layer PL1. The first switching element T1 may be composed of a semiconductor layer CH1 , a gate GE1 , a source SE1 and a drain DE1 . The area where the semiconductor layer CH1 overlaps the gate GE1 can be regarded as the channel area of the first switching element T1. The gate insulating layer I2 is located between the gate GE1 and the semiconductor layer CH1 , and the interlayer insulating layer I3 is disposed between the source SE1 and the gate GE1 and between the drain DE1 and the gate GE1 . The gate GE1 and the source SE1 can respectively receive signals from eg the driving element, and the electrode E11 of the first sensing element S1 can be electrically connected to the drain DE1 through the via VA1 in the planar layer PL1 . For example, when the gate GE1 receives a signal to turn on the first switching element T1, the signal received by the source SE1 can be transmitted to the electrode E11 of the first sensing element S1 through the drain DE1. In other embodiments, the driving circuit layer DL1 may further include more insulating layers and conductive layers as required.

舉例而言，半導體層CH1的材質可以包括矽質半導體材料（例如多晶矽、非晶矽等）、氧化物半導體材料、有機半導體材料，而閘極GE1、源極SE1以及汲極DE1的材質可包括導電性良好的金屬，例如鋁、鉬、鈦、銅等金屬，或是上述金屬之合金或疊層，但不限於此。For example, the material of the semiconductor layer CH1 may include silicon semiconductor material (such as polysilicon, amorphous silicon, etc.), oxide semiconductor material, organic semiconductor material, and the material of the gate GE1, the source SE1 and the drain DE1 may include Metals with good electrical conductivity, such as aluminum, molybdenum, titanium, copper and other metals, or alloys or laminates of the above metals, but not limited thereto.

在本實施例中，第二感測元件層130疊置於第一感測元件層120上，且第二感測元件層130可以包括多個第二感測元件S2、平坦層PL3、PL4以及絕緣層I5，其中第二感測元件S2可以是不可見光感測元件，例如紅外光感測元件，使得第二感測元件S2可用於例如感測血氧濃度，或擷取靜脈圖像以用於活體防偽，或是用於擷取指紋圖像。舉例而言，第二感測元件S2可以是有機光電二極體（Organic Photodiode，OPD），且第二感測元件S2可以包括電極E21、電洞傳輸層HT、光敏層PT、電子傳輸層ET以及電極E22，其中電子傳輸層ET、光敏層PT以及電洞傳輸層HT位於電極E21與電極E22之間，且光敏層PT可以位於電子傳輸層ET與第一基板110之間，但不限於此。在一些實施例中，光敏層PT可以位於電洞傳輸層HT與第一基板110之間。另外，在某些實施例中，第一感測元件S1及第二感測元件S2可以皆為不可見光感測元件，且第一感測元件S1與第二感測元件S2的感測波長範圍可以不同。In this embodiment, the second sensing element layer 130 is stacked on the first sensing element layer 120, and the second sensing element layer 130 may include a plurality of second sensing elements S2, planar layers PL3, PL4 and The insulating layer I5, wherein the second sensing element S2 can be an invisible light sensing element, such as an infrared light sensing element, so that the second sensing element S2 can be used, for example, to sense blood oxygen concentration, or to capture vein images for use It is used for anti-counterfeiting in vivo, or for capturing fingerprint images. For example, the second sensing element S2 may be an organic photodiode (Organic Photodiode, OPD), and the second sensing element S2 may include an electrode E21, a hole transport layer HT, a photosensitive layer PT, an electron transport layer ET And the electrode E22, wherein the electron transport layer ET, the photosensitive layer PT and the hole transport layer HT are located between the electrode E21 and the electrode E22, and the photosensitive layer PT can be located between the electron transport layer ET and the first substrate 110, but not limited thereto . In some embodiments, the photosensitive layer PT may be located between the hole transport layer HT and the first substrate 110 . In addition, in some embodiments, both the first sensing element S1 and the second sensing element S2 may be invisible light sensing elements, and the sensing wavelength ranges of the first sensing element S1 and the second sensing element S2 Can be different.

舉例而言，電極E21可以是不透明導電材料，例如銀層或鋁層；電洞傳輸層HT可以包括PEDOT:PSS（poly(3,4-ethylene- dioxythiophene:polystyrene sulfonate)）或高功函數金屬氧化物（例如MoO 3）；光敏層PT可以包括在紅外光（IR）區域及/或近紅外光（NIR）區域進行吸收的光敏性聚合物，例如P3HT:PCBM（poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester）或PDPP3T-PCBM（poly-(diketopyrrole-terthiophene):[6,6]- phenyl-C61-butyric acid methyl ester）；電子傳輸層ET可以包括氧化鋅（ZnO）或鋁鋅氧化物（AZO）；且電極E22的材質可以是透明導電材料，例如銦錫氧化物（ITO）。 For example, the electrode E21 can be an opaque conductive material, such as a silver layer or an aluminum layer; the hole transport layer HT can include PEDOT:PSS (poly(3,4-ethylene-dioxythiophene:polystyrene sulfonate)) or a high work function metal oxide (such as MoO 3 ); the photosensitive layer PT may include a photosensitive polymer that absorbs in the infrared (IR) region and/or near-infrared (NIR) region, such as P3HT:PCBM (poly(3-hexylthiophene):[ 6,6]-phenyl-C61-butyric acid methyl ester) or PDPP3T-PCBM (poly-(diketopyrrole-terthiophene):[6,6]-phenyl-C61-butyric acid methyl ester); the electron transport layer ET can include oxide Zinc (ZnO) or aluminum zinc oxide (AZO); and the material of the electrode E22 can be a transparent conductive material, such as indium tin oxide (ITO).

在一些實施例中，驅動電路層DL1的第一開關元件T1還可以電性連接第二感測元件S2的電極E21或電極E22，如此一來，雙感測裝置10還能夠利用第一開關元件T1來控制第二感測元件S2的訊號接收，進而藉由時序控制在不同時段接收第一感測元件S1及第二感測元件S2的訊號。In some embodiments, the first switching element T1 of the driving circuit layer DL1 can also be electrically connected to the electrode E21 or the electrode E22 of the second sensing element S2, so that the dual sensing device 10 can also utilize the first switching element T1 is used to control the signal reception of the second sensing element S2, and then the signals of the first sensing element S1 and the second sensing element S2 are received at different time periods through timing control.

在本實施例中，雙感測裝置10還可以包括光源LS，光源LS可以設置於第一基板110上與第一感測元件層120相對的一側，且光源LS可以包括可見光光源以及不可見光光源。在一些實施例中，光源LS可以包括多個發光二極體，其中一部分的發光二極體可以發出可見光LV，且另一部分的發光二極體可以發出不可見光LI，例如紅外光。舉例而言，光源LS發出的可見光LV可以經手指FG反射而進入第一感測元件S1，且光源LS發出的不可見光LI可以經手指FG反射而進入第二感測元件S2。In this embodiment, the dual sensing device 10 may further include a light source LS, the light source LS may be disposed on the side of the first substrate 110 opposite to the first sensing element layer 120, and the light source LS may include a visible light source and an invisible light source. light source. In some embodiments, the light source LS may include a plurality of light emitting diodes, wherein some of the light emitting diodes may emit visible light LV, and the other part of the light emitting diodes may emit invisible light LI, such as infrared light. For example, the visible light LV emitted by the light source LS can be reflected by the finger FG and enter the first sensing element S1 , and the invisible light LI emitted by the light source LS can be reflected by the finger FG and enter the second sensing element S2 .

在一些實施例中，雙感測裝置10還可以包括平坦層PL5以及玻璃蓋板CG，其中平坦層PL5可以位於玻璃蓋板CG與第二感測元件層130之間，且使用者可以以其手指FG觸摸玻璃蓋板CG來進行諸如指紋、指靜脈活體防偽、血氧濃度的感測。In some embodiments, the dual sensing device 10 may further include a flat layer PL5 and a glass cover CG, wherein the flat layer PL5 may be located between the glass cover CG and the second sensing element layer 130, and the user may use its The finger FG touches the glass cover CG to perform sensing such as fingerprints, finger vein anti-counterfeiting, and blood oxygen concentration.

進一步而言，雙感測裝置10可以具有開口區OA，其中第一感測元件S1及第二感測元件S2可以位於開口區OA之外，也就是說，開口區OA不設置第一感測元件S1及第二感測元件S2。由於第一感測元件S1於第一基板110的正投影重疊第二感測元件S2於第一基板110的正投影，開口區OA能夠具有增大的面積。如此一來，來自光源的可見光LV及不可見光LI可以經由開口區OA到達手指FG，而不會被第一感測元件S1及第二感測元件S2遮擋，使得第一感測元件S1及第二感測元件S2能夠接收到強度增加且雜訊減少的入射光，從而提高其感測性能。Furthermore, the dual sensing device 10 may have an open area OA, wherein the first sensing element S1 and the second sensing element S2 may be located outside the opening area OA, that is, the opening area OA is not provided with the first sensing element. The element S1 and the second sensing element S2. Since the orthographic projection of the first sensing element S1 on the first substrate 110 overlaps the orthographic projection of the second sensing element S2 on the first substrate 110 , the opening area OA can have an enlarged area. In this way, the visible light LV and invisible light LI from the light source can reach the finger FG through the opening area OA without being blocked by the first sensing element S1 and the second sensing element S2, so that the first sensing element S1 and the second sensing element S1 The second sensing element S2 can receive incident light with increased intensity and reduced noise, thereby improving its sensing performance.

在本實施例中，還可以利用電極E21來調控第一感測元件S1的感測層SR的收光角度，也就是說，電極E21可以作為第一感測元件S1的光角控制層。舉例而言，電極E21於第一基板110的正投影可以重疊第一感測元件S1於第一基板110的正投影，同時電極E21還可沿著絕緣層I5的側壁IW朝向第一感測元件S1延伸，使得電極E21能夠遮擋來自第一感測元件S1正上方及左上方的光線，且可見光LV經手指FG反射後僅能從電極E21與遮光層SH之間的平坦層PL3及絕緣層I5中的側向透光開口OP進入第一感測元件S1的感測層SR。如此一來，僅有斜向大角度的光能夠通過開口OP、O1而進入感測層SR，經實驗證實，此種設計能夠有效提升第一感測元件S1的感測效果。另外，經手指FG反射的不可見光LI可以先進入第二感測元件S2的電子傳輸層ET，使得第二感測元件S2能夠具有較佳的光電轉換效率（EQE）。In this embodiment, the electrode E21 can also be used to regulate the light receiving angle of the sensing layer SR of the first sensing element S1 , that is, the electrode E21 can be used as a light angle control layer of the first sensing element S1 . For example, the orthographic projection of the electrode E21 on the first substrate 110 can overlap the orthographic projection of the first sensing element S1 on the first substrate 110, and the electrode E21 can also face the first sensing element along the sidewall IW of the insulating layer I5. S1 is extended, so that the electrode E21 can block the light from the top and left top of the first sensing element S1, and the visible light LV can only pass through the flat layer PL3 and the insulating layer I5 between the electrode E21 and the light shielding layer SH after being reflected by the finger FG The lateral light-transmitting opening OP in enters the sensing layer SR of the first sensing element S1. In this way, only light with a large oblique angle can enter the sensing layer SR through the openings OP and O1 . Experiments have proved that this design can effectively improve the sensing effect of the first sensing element S1 . In addition, the invisible light LI reflected by the finger FG can enter the electron transport layer ET of the second sensing element S2 first, so that the second sensing element S2 can have better photoelectric conversion efficiency (EQE).

以下，使用圖2至圖3繼續說明本發明的其他實施例，並且，沿用圖1的實施例的元件標號與相關內容，其中，採用相同的標號來表示相同或近似的元件，並且省略了相同技術內容的說明。關於省略部分的說明，可參考圖1的實施例，在以下的說明中不再重述。In the following, other embodiments of the present invention will be described continuously using FIGS. 2 to 3, and the component numbers and related contents of the embodiment in FIG. A description of the technical content. For the description of omitted parts, reference may be made to the embodiment in FIG. 1 , which will not be repeated in the following description.

圖2是依照本發明一實施例的雙感測裝置20的剖面示意圖。雙感測裝置20包括第一基板110、驅動電路層DL1、第一感測元件層120、第二感測元件層130B以及光源LS，且第二感測元件層130B的第二感測元件S2於第一基板110的正投影重疊第一感測元件層120的第一感測元件S1於第一基板110的正投影。FIG. 2 is a schematic cross-sectional view of a dual sensing device 20 according to an embodiment of the invention. The dual sensing device 20 includes a first substrate 110, a driving circuit layer DL1, a first sensing element layer 120, a second sensing element layer 130B, and a light source LS, and the second sensing element S2 of the second sensing element layer 130B The orthographic projection of the first sensing element S1 of the first sensing element layer 120 on the first substrate 110 overlaps the orthographic projection of the first substrate 110 .

與如圖1所示的雙感測裝置10相比，圖2所示的雙感測裝置20的不同之處在於：雙感測裝置20還包括第二基板140，其中第二感測元件層130B可以位於第二基板140與第一感測元件層120之間，且第一感測元件層120及第二感測元件層130B可以分別設置於第一基板110及第二基板140上。如此一來，藉由將設置於第一基板110的第一感測元件層120與設置於第二基板140的第二感測元件層130B對組即可完成雙感測裝置20的製作。Compared with the dual sensing device 10 shown in FIG. 1, the difference of the dual sensing device 20 shown in FIG. 2 is that the dual sensing device 20 further includes a second substrate 140, wherein the second sensing element layer 130B may be located between the second substrate 140 and the first sensing element layer 120 , and the first sensing element layer 120 and the second sensing element layer 130B may be disposed on the first substrate 110 and the second substrate 140 respectively. In this way, the fabrication of the dual sensing device 20 can be completed by pairing the first sensing element layer 120 disposed on the first substrate 110 with the second sensing element layer 130B disposed on the second substrate 140 .

在本實施例中，第二感測元件層130B可以包括多個第二感測元件S2、平坦層PL8、PL9以及絕緣層I9，且平坦層PL9可以位於第二感測元件S2與第一感測元件層120之間，第二感測元件S2的電子傳輸層ET可以位於光敏層PT與第二基板140之間。In this embodiment, the second sensing element layer 130B may include a plurality of second sensing elements S2, planar layers PL8, PL9, and an insulating layer I9, and the planar layer PL9 may be located between the second sensing element S2 and the first sensing element. Between the sensing element layer 120 , the electron transport layer ET of the second sensing element S2 may be located between the photosensitive layer PT and the second substrate 140 .

在本實施例中，雙感測裝置20還可以包括光角控制層AC，且光角控制層AC可以位於絕緣層I5與平坦層PL6之間。具體而言，光角控制層AC於第一基板110的正投影可以重疊第一感測元件S1於第一基板110的正投影，尤其光角控制層AC可以重疊遮光層SH的開口O1，同時光角控制層AC還可沿著絕緣層I5的側壁IW朝向第一感測元件S1延伸，使得光角控制層AC能夠遮擋來自第一感測元件S1正上方及左上方的光線。如此一來，僅有斜向大角度的光能夠通過開口OP、O1而進入感測層SR，使得第一感測元件S1的感測效果能夠得到提升。In this embodiment, the dual sensing device 20 may further include an optical angle control layer AC, and the optical angle control layer AC may be located between the insulating layer I5 and the planar layer PL6 . Specifically, the orthographic projection of the light angle control layer AC on the first substrate 110 can overlap the orthographic projection of the first sensing element S1 on the first substrate 110, especially the light angle control layer AC can overlap the opening O1 of the light shielding layer SH, and at the same time The light angle control layer AC can also extend toward the first sensing element S1 along the sidewall IW of the insulating layer I5 , so that the light angle control layer AC can block the light from the top and left top of the first sensing element S1 . In this way, only light with a large oblique angle can enter the sensing layer SR through the openings OP and O1, so that the sensing effect of the first sensing element S1 can be improved.

在一些實施例中，雙感測裝置20還可以包括位於第二感測元件層130B與第二基板140之間的驅動電路層DL2。驅動電路層DL2可以包括雙感測裝置20需要的元件或線路，例如訊號線SL，且第二感測元件S2的電極E22可以電性連接訊號線SL。在一些實施例中，第二感測元件S2可以經由訊號線SL及/或周邊走線電性連接至驅動電路層DL1的第一開關元件T1。In some embodiments, the dual sensing device 20 may further include a driving circuit layer DL2 located between the second sensing element layer 130B and the second substrate 140 . The driving circuit layer DL2 may include elements or circuits required by the dual sensing device 20 , such as the signal line SL, and the electrode E22 of the second sensing element S2 may be electrically connected to the signal line SL. In some embodiments, the second sensing element S2 may be electrically connected to the first switching element T1 of the driving circuit layer DL1 through the signal line SL and/or the peripheral wiring.

圖3是依照本發明一實施例的雙感測裝置30的剖面示意圖。雙感測裝置30包括第一基板110、驅動電路層DL1、第一感測元件層120、第二感測元件層130B、光源LS、第二基板140以及光角控制層AC，且第二感測元件層130B的第二感測元件S2於第一基板110的正投影重疊第一感測元件層120的第一感測元件S1於第一基板110的正投影。FIG. 3 is a schematic cross-sectional view of a dual sensing device 30 according to an embodiment of the invention. The dual sensing device 30 includes a first substrate 110, a driving circuit layer DL1, a first sensing element layer 120, a second sensing element layer 130B, a light source LS, a second substrate 140, and an optical angle control layer AC. The orthographic projection of the second sensing element S2 of the sensing element layer 130B on the first substrate 110 overlaps the orthographic projection of the first sensing element S1 of the first sensing element layer 120 on the first substrate 110 .

與如圖2所示的雙感測裝置20相比，圖3所示的雙感測裝置30的不同之處在於：雙感測裝置30還包括位於第二感測元件層130B與第二基板140之間的驅動電路層DL3，且驅動電路層DL3可以包括排列成陣列的多個第二開關元件T2。Compared with the dual sensing device 20 shown in FIG. 2 , the difference of the dual sensing device 30 shown in FIG. 3 is that the dual sensing device 30 further includes 140 between the driving circuit layer DL3, and the driving circuit layer DL3 may include a plurality of second switching elements T2 arranged in an array.

舉例而言，在本實施例中，驅動電路層DL3可以包括第二開關元件T2、緩衝層I6、閘極絕緣層I7、層間絕緣層I8以及平坦層PL7。第二開關元件T2可以由半導體層CH2、閘極GE2、源極SE2與汲極DE2所構成，且第二感測元件S2的電極E22可以通過平坦層PL7中的通孔VA2電性連接汲極DE2，使得雙感測裝置30能夠利用第一開關元件T1及第二開關元件T2分別控制第一感測元件S1及第二感測元件S2的訊號接收。第二開關元件T2的結構可以類似於第一開關元件T1，於此不再贅述。For example, in this embodiment, the driving circuit layer DL3 may include the second switching element T2, the buffer layer I6, the gate insulating layer I7, the interlayer insulating layer I8 and the planarization layer PL7. The second switching element T2 may be composed of a semiconductor layer CH2, a gate GE2, a source SE2, and a drain DE2, and the electrode E22 of the second sensing element S2 may be electrically connected to the drain through the via VA2 in the planar layer PL7. DE2 enables the dual sensing device 30 to use the first switching element T1 and the second switching element T2 to control the signal reception of the first sensing element S1 and the second sensing element S2 respectively. The structure of the second switch element T2 may be similar to that of the first switch element T1 , which will not be repeated here.

此外，前述緩衝層I1、I6、閘極絕緣層I2、I7、層間絕緣層I3、I8以及絕緣層I4、I5、I9的材質可以包括透明的絕緣材料，例如氧化矽、氮化矽、氮氧化矽或上述材料的疊層，但本發明不限於此。平坦層PL1~PL9的材質可以包括透明的絕緣材料，例如有機材料、壓克力（acrylic）材料、矽氧烷（siloxane）材料、聚醯亞胺（polyimide）材料、環氧樹脂（epoxy）材料等，但不限於此。緩衝層I1、I6、閘極絕緣層I2、I7、層間絕緣層I3、I8、絕緣層I4、I5、I9以及平坦層PL1~PL9也可以分別具有單層結構或多層結構，多層結構例如上述絕緣材料中任意兩層或更多層的疊層，可視需要進行組合與變化。In addition, the aforementioned buffer layers I1, I6, gate insulating layers I2, I7, interlayer insulating layers I3, I8, and insulating layers I4, I5, I9 may be made of transparent insulating materials, such as silicon oxide, silicon nitride, oxynitride, etc. Silicon or a stack of the above materials, but the present invention is not limited thereto. The material of the flat layers PL1-PL9 may include transparent insulating materials, such as organic materials, acrylic materials, siloxane materials, polyimide materials, epoxy materials etc., but not limited to this. Buffer layers I1, I6, gate insulating layers I2, I7, interlayer insulating layers I3, I8, insulating layers I4, I5, I9 and flat layers PL1~PL9 may also have a single-layer structure or a multi-layer structure respectively, and the multi-layer structure is such as the above insulation The lamination of any two or more layers in the material can be combined and changed as required.

綜上所述，本發明的雙感測裝置藉由使第二感測元件層的第二感測元件於第一基板的正投影重疊第一感測元件層的第一感測元件於第一基板的正投影，能夠簡化雙感測裝置的整合結構，同時增大雙感測裝置的開口區，藉以提升感測元件的感測效果。In summary, the dual sensing device of the present invention overlaps the first sensing element of the first sensing element layer on the first substrate by making the orthographic projection of the second sensing element of the second sensing element layer on the first substrate The orthographic projection of the substrate can simplify the integrated structure of the dual sensing device, and at the same time increase the opening area of the dual sensing device, so as to improve the sensing effect of the sensing element.

雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明的精神和範圍內，當可作些許的更動與潤飾，故本發明的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed above with the embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field may make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention should be defined by the scope of the appended patent application.

10、20、30：雙感測裝置 110：第一基板 120：第一感測元件層 130、130B：第二感測元件層 140：第二基板 AC：光角控制層 CG：玻璃蓋板 CH1、CH2：半導體層 DE1、DE2：汲極 DL1、DL2、DL3：驅動電路層 E11、E12、E21、E22：電極 ET：電子傳輸層 FG：手指 GE1、GE2：閘極 HT：電洞傳輸層 I1、I6：緩衝層 I2、I7：閘極絕緣層 I3、I8：層間絕緣層 I4、I5、I9：絕緣層 IW：側壁 LI：不可見光 LS：光源 LV：可見光 O1：開口 OP：側向透光開口 OA：開口區 PL1~PL9：平坦層 PT：光敏層 S1：第一感測元件 S2：第二感測元件 SE1、SE2：源極 SH：遮光層 SL：訊號線 SR：感測層 T1：第一開關元件 T2：第二開關元件 VA1、VA2：通孔 10, 20, 30: Dual sensing device 110: first substrate 120: the first sensing element layer 130, 130B: second sensing element layer 140: Second substrate AC: light angle control layer CG: glass cover CH1, CH2: semiconductor layer DE1, DE2: Drain DL1, DL2, DL3: drive circuit layer E11, E12, E21, E22: electrodes ET: electron transport layer FG: finger GE1, GE2: gate HT: hole transport layer I1, I6: buffer layer I2, I7: gate insulation layer I3, I8: interlayer insulating layer I4, I5, I9: insulation layer IW: side wall LI: invisible light LS: light source LV: visible light O1: open OP: side light opening OA: open area PL1~PL9: flat layer PT: photosensitive layer S1: first sensing element S2: Second sensing element SE1, SE2: source SH: Shading layer SL: signal line SR: Sensing layer T1: first switching element T2: second switching element VA1, VA2: through holes

圖1是依照本發明一實施例的雙感測裝置10的剖面示意圖。 圖2是依照本發明一實施例的雙感測裝置20的剖面示意圖。 圖3是依照本發明一實施例的雙感測裝置30的剖面示意圖。 FIG. 1 is a schematic cross-sectional view of a dual sensing device 10 according to an embodiment of the invention. FIG. 2 is a schematic cross-sectional view of a dual sensing device 20 according to an embodiment of the invention. FIG. 3 is a schematic cross-sectional view of a dual sensing device 30 according to an embodiment of the invention.

10：雙感測裝置 110：第一基板 120：第一感測元件層 130：第二感測元件層 CG：玻璃蓋板 CH1：半導體層 DE1：汲極 DL1：驅動電路層 E11、E12、E21、E22：電極 ET：電子傳輸層 FG：手指 GE1：閘極 HT：電洞傳輸層 I1：緩衝層 I2：閘極絕緣層 I3：層間絕緣層 I4、I5：絕緣層 IW：側壁 LI：不可見光 LS：光源 LV：可見光 O1：開口 OP：側向透光開口 OA：開口區 PL1~PL5：平坦層 PT：光敏層 S1：第一感測元件 S2：第二感測元件 SE1：源極 SH：遮光層 SR：感測層 T1：第一開關元件 VA1：通孔 10: Dual sensing device 110: first substrate 120: the first sensing element layer 130: second sensing element layer CG: glass cover CH1: semiconductor layer DE1: drain DL1: Drive circuit layer E11, E12, E21, E22: electrodes ET: electron transport layer FG: finger GE1: Gate HT: hole transport layer I1: buffer layer I2: Gate insulating layer I3: interlayer insulating layer I4, I5: insulating layer IW: side wall LI: invisible light LS: light source LV: visible light O1: open OP: side light opening OA: open area PL1~PL5: flat layer PT: photosensitive layer S1: first sensing element S2: Second sensing element SE1: source SH: Shading layer SR: Sensing layer T1: first switching element VA1: through hole

Claims (15)

一種雙感測裝置，包括：第一基板；第一感測元件層，位於所述第一基板上，且包括多個第一感測元件，其中所述第一感測元件包括：第一電極、第二電極以及感測層，且所述感測層位於所述第一電極與所述第二電極之間；以及第二感測元件層，位於所述第一感測元件層上，且包括多個第二感測元件，其中所述第二感測元件包括：第三電極、第四電極以及光敏層，且所述光敏層位於所述第三電極與所述第四電極之間，其中所述光敏層於所述第一基板的正投影重疊所述感測層於所述第一基板的正投影。 A dual sensing device, comprising: a first substrate; a first sensing element layer located on the first substrate and including a plurality of first sensing elements, wherein the first sensing elements include: a first electrode , a second electrode and a sensing layer, and the sensing layer is located between the first electrode and the second electrode; and a second sensing element layer is located on the first sensing element layer, and including a plurality of second sensing elements, wherein the second sensing element includes: a third electrode, a fourth electrode, and a photosensitive layer, and the photosensitive layer is located between the third electrode and the fourth electrode, Wherein the orthographic projection of the photosensitive layer on the first substrate overlaps the orthographic projection of the sensing layer on the first substrate. 如請求項1所述的雙感測裝置，其中所述第一感測元件為可見光感測元件。 The dual sensing device as claimed in claim 1, wherein the first sensing element is a visible light sensing element. 如請求項1所述的雙感測裝置，其中所述第一感測元件為指紋感測元件。 The dual-sensing device as claimed in claim 1, wherein the first sensing element is a fingerprint sensing element. 如請求項1所述的雙感測裝置，還包括遮光層，位於所述第一感測元件上且具有開口，且所述開口於所述第一基板的正投影重疊所述感測層於所述第一基板的正投影。 The dual-sensing device according to claim 1, further comprising a light-shielding layer, which is located on the first sensing element and has an opening, and the orthographic projection of the opening on the first substrate overlaps the sensing layer on the Orthographic projection of the first substrate. 如請求項1所述的雙感測裝置，還包括光角控制層，位於所述第一感測元件上，且所述光角控制層於所述第一基板的正投影重疊所述第一感測元件於所述第一基板的正投影。 The dual sensing device according to claim 1, further comprising an optical angle control layer located on the first sensing element, and the orthographic projection of the optical angle control layer on the first substrate overlaps the first Orthographic projection of the sensing element on the first substrate. 如請求項5所述的雙感測裝置，其中所述光角控制層為所述第二感測元件的所述第三電極。 The dual sensing device as claimed in claim 5, wherein the light angle control layer is the third electrode of the second sensing element. 如請求項1所述的雙感測裝置，其中所述第二感測元件為紅外光感測元件。 The dual sensing device as claimed in claim 1, wherein the second sensing element is an infrared light sensing element. 如請求項1所述的雙感測裝置，其中所述第一感測元件及所述第二感測元件為不同波長之不可見光感測元件。 The dual sensing device according to claim 1, wherein the first sensing element and the second sensing element are invisible light sensing elements with different wavelengths. 如請求項1所述的雙感測裝置，其中所述第二感測元件為有機光電二極體。 The dual sensing device as claimed in claim 1, wherein the second sensing element is an organic photodiode. 如請求項9所述的雙感測裝置，其中所述有機光電二極體包括電子傳輸層、電洞傳輸層，所述光敏層位於所述電子傳輸層與所述電洞傳輸層之間，且所述光敏層位於所述電子傳輸層與所述第一基板之間。 The dual sensing device according to claim 9, wherein the organic photodiode includes an electron transport layer and a hole transport layer, and the photosensitive layer is located between the electron transport layer and the hole transport layer, And the photosensitive layer is located between the electron transport layer and the first substrate. 如請求項1所述的雙感測裝置，還具有開口區，且所述第一感測元件及所述第二感測元件位於所述開口區之外。 The dual sensing device according to claim 1 further has an opening area, and the first sensing element and the second sensing element are located outside the opening area. 如請求項1所述的雙感測裝置，還包括第一開關元件，位於所述第一基板上，且電性連接所述第一感測元件。 The dual-sensing device as claimed in claim 1 further includes a first switch element located on the first substrate and electrically connected to the first sensing element. 如請求項1所述的雙感測裝置，還包括第二基板，其中所述第二感測元件層位於所述第二基板與所述第一感測元件層之間。 The dual sensing device according to claim 1, further comprising a second substrate, wherein the second sensing element layer is located between the second substrate and the first sensing element layer. 如請求項13所述的雙感測裝置，還包括第二開關元件，位於所述第二感測元件層與所述第二基板之間，且電性連接所述第二感測元件。 The dual-sensing device as claimed in claim 13 further includes a second switch element located between the second sensing element layer and the second substrate and electrically connected to the second sensing element. 如請求項1所述的雙感測裝置，還包括光源，位於所述第一基板上與所述第一感測元件層相對的一側。 The dual-sensing device according to claim 1, further comprising a light source located on the side of the first substrate opposite to the first sensing element layer.
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