TWI744027B - Optical sensor panel - Google Patents

Abstract

An optical sensor panel includes a substrate, an active device, a photo-sensing unit and a collimating structure. The active device is over the substrate and includes a drain. The photo-sensing unit is over the substrate and electrically connected to the active device. The collimating structure is between the substrate and the photo-sensing unit. A normal projection of the collimating structure onto the substrate is within a normal projection of the photo-sensing unit onto the substrate. At least a portion of the collimating structure is of same film layer as drain or gate.

Description

Sensing element substrate

This disclosure relates to a sensing element substrate.

In recent years, electronic devices are often equipped with sensing elements to expand their functions. For example, electronic devices can be equipped with fingerprint sensing elements so as to be used as a certificate for protecting the information security of the electronic device. The fingerprint sensing element is usually fabricated on the pixel array substrate, but this will cause the problem of reduced pixel aperture ratio. In order to increase the aperture ratio, one of the solutions is to fabricate the fingerprint sensor element on the opposite substrate, but an additional light control film must be attached to increase the sensitivity of the fingerprint sensor element. However, this will not only increase the production cost and increase the thickness of the panel, but also cause the problem of poor viewing angle. Therefore, there is an urgent need for a method that can solve the aforementioned problems.

The present disclosure provides a sensing element substrate, which can simultaneously have the advantages of lightness and thinness and good fingerprint resolution.

The sensing element substrate of the present disclosure includes a substrate, an active element, a photosensitive unit, and a light collimating structure. The active element is located on the substrate, and the active element includes a drain. The photosensitive unit is located on the substrate and is electrically connected to the active element. The light collimating structure is located between the substrate and the photosensitive unit. The orthographic projection of the light collimating structure on the substrate falls within the orthographic projection of the photosensitive unit on the substrate, the drain and the light collimating structure belong to the same film layer, and the material of the drain is the same as that of the light collimating structure.

In an embodiment of the present disclosure, the aforementioned sensing device substrate further includes an interlayer dielectric layer. The interlayer dielectric layer is located between the substrate and the photosensitive unit and has a plurality of through holes. The light collimating structure includes a plurality of extensions, each extension is located in each through hole of the interlayer dielectric layer, the extension direction of the extension is substantially parallel to the normal direction of the substrate, and the distance between the extensions is 2 microns to 10 microns.

In an embodiment of the present disclosure, the above-mentioned test element substrate further includes a control line. The control line is located on the substrate and is electrically connected to the active element, and the extension part is substantially perpendicular to the control line.

In an embodiment of the present disclosure, the aspect ratio of the above-mentioned extension portions is 0.1-6.

In an embodiment of the present disclosure, the above-mentioned extension portion further includes a plurality of first sub-extending portions and a plurality of second sub-extending portions. Each second sub-extending portion and each first sub-extending portion are alternately arranged so that the second sub-extending portion and the first sub-extending portion form a mesh pattern, and the number of the first sub-extending portion is greater than two, and the second sub-extending portion The number of parts is more than two.

In an embodiment of the present disclosure, the aforementioned sensing element substrate further includes a control line. The control line is located on the substrate and electrically connected to the active element, and the extension direction of the second sub-extension part is staggered with the control line.

In an embodiment of the present disclosure, the aforementioned sensing element substrate further includes a control line. The control line is located on the substrate and is electrically connected to the active element, and the second sub-extension portion is substantially parallel to the control line.

Based on the above, in the sensing element substrate of the present disclosure, through the design The light collimating structure is placed between the substrate and the photosensitive unit, so that the light reflected by the peaks and troughs of the fingerprint can be more collimated toward the path of the photosensitive unit, and at least a part of the light collimating structure is connected to the drain or gate All of them belong to the same film layer. Since there is no need to attach a light collimating film layer to the display device, the display device can have the advantages of lightness and thinness and good fingerprint resolution at the same time. The orthographic projection of the light collimating structure on the substrate falls within the orthographic projection of the photosensitive unit on the substrate, so that the aperture ratio or viewing angle of the pixel array substrate is not affected.

The sensing element substrate of the present disclosure includes a substrate including a substrate, an active element, a photosensitive unit, and a light collimating structure. The active device is located on the substrate, and the active device includes a gate electrode and a drain electrode. The photosensitive unit is located on the substrate and is electrically connected to the active element. The light collimating structure is located between the substrate and the photosensitive unit. The orthographic projection of the light collimating structure on the substrate falls within the orthographic projection of the photosensitive unit on the substrate. The light collimating structure includes a plurality of extensions, the extension direction of which is substantially parallel to the normal direction of the substrate, and each extension has The connected lower part and upper part, the lower part and the gate electrode belong to the same film layer, and the material of the lower part is the same as the gate electrode material, the upper part belongs to the same film layer as the drain electrode, and the upper material is the same as the drain electrode material.

In an embodiment of the present disclosure, the lower portion of each of the above-mentioned extensions contacts the substrate, and the aspect ratio of each of the extensions is 0.1-6.

In an embodiment of the present disclosure, the aforementioned sensing device substrate further includes an interlayer dielectric layer. The interlayer dielectric layer is located between the substrate and the photosensitive unit and has a plurality of through holes. The light collimating structure further includes a plurality of island portions located above the upper portion of the extension portion, the upper portion and the lower portion of each extension portion are located in the through holes of the interlayer dielectric layer, and the island portion is located outside the through opening.

Based on the above, in the sensing element substrate of the present disclosure, by arranging the light collimating structure between the substrate and the photosensitive unit, the light reflected by the peaks and troughs of the fingerprint can be more collimated toward the path of the photosensitive unit, and The gate electrode and the lower part of the light collimating structure belong to the same film layer, and the material of the gate electrode is the same as the material of the lower part of the light collimating structure. The drain electrode and the upper part of the light collimating structure belong to the same film layer, and the material of the drain electrode is the same The material of the upper part of the light collimating structure is the same, and since there is no need to attach the light collimating film layer to the display device, the display device can have the advantages of lightness and thinness and good fingerprint resolution at the same time. The orthographic projection of the light collimating structure on the substrate falls within the orthographic projection of the photosensitive unit on the substrate, so that the aperture ratio or viewing angle of the pixel array substrate is not affected.

In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.

FIG. 1 is a schematic cross-sectional view of a display device 10 according to an embodiment of the disclosure. The display device 10 includes a sensing element substrate 100, a pixel array substrate 200, a display medium layer 300 and a backlight module 400. The display medium layer 300 is located between the pixel array substrate 200 and the sensing element substrate 100. The backlight module 400 is disposed under the pixel array substrate 200. In other words, the pixel array substrate 200 is located between the sensing element substrate 100 and the backlight module 400. between. In FIG. 1, part of the components of the sensing element substrate 100 and the components of the pixel array substrate 200 are omitted. Fig. 2 is a schematic plan view of the sensor element substrate 100 of Fig. 1, Fig. 3A is a schematic cross-sectional view along the section line AA' of Fig. 2, and Fig. 3B is a sectional line B-B of Fig. 2 3C is a schematic cross-sectional view of the section line C-C' of FIG. 2, and FIG. 3D is a schematic cross-sectional view of the section line D-D' of FIG. 2. Referring to FIG. 1, FIG. 2 and FIG. 3A at the same time, the sensing device substrate 100 includes a substrate SUB, an active device T on the substrate SUB, a photosensitive unit 102 and a light collimating structure 104. In an embodiment, the sensing device substrate 100 further includes a light shielding layer SM, a buffer layer 106, an insulating layer 108, and an interlayer dielectric layer 110. The light-shielding layer SM is located on the substrate SUB, and the material of the light-shielding layer SM is, for example, metal, resin, graphite or other applicable materials. The light shielding layer SM can be used to avoid the problem of light leakage of the active device T. The buffer layer 106 is located above the light shielding layer SM and above the substrate SUB. The material of the substrate SUB is, for example, glass, quartz or organic polymer.

The active device T is located on the insulating layer 108, and the active device T includes a gate G, a source S, a drain D, and a semiconductor channel layer CH. The semiconductor channel layer CH is located on the insulating layer 108, the orthographic projection of the gate electrode G on the substrate SUB overlaps the orthographic projection of the semiconductor channel layer CH on the substrate SUB, and an insulating layer 108 is sandwiched between the gate electrode G and the semiconductor channel layer CH.

In this embodiment, the sensing element substrate 100 further includes a data line DL, a control line CL, and a signal line SL on the substrate SUB. For the convenience of description, Figure 2 shows the first direction D1 and the second direction D2, and the first direction D1 and the second direction D2 are different, for example, the first direction D1 and the second direction D2 are respectively the first direction D1 and the second direction D2 The longitudinal direction and the transverse direction are orthogonal to each other. In this embodiment, the control line CL extends along the second direction D2, and the data line DL and the signal line SL extend along the first direction D1. The gate G of the active element T is electrically connected to the control line CL. In this embodiment, the gate electrode G and the control line CL belong to the same film layer, that is, they are patterned from the same material layer. That is, the material of the gate electrode G is the same as the material of the control line CL. The interlayer dielectric layer 110 is located on the insulating layer 108, the source S and the drain D are located on the insulating layer 108, and the source S is electrically connected to the data line DL. In this embodiment, the source S, the drain D, the data line DL, and the signal line SL belong to the same film layer, that is, they are patterned from the same material layer. In other words, the materials of the source S, the drain D, the data line DL, and the signal line SL are the same. The source S and the drain D are electrically connected to the semiconductor channel layer CH through contact holes TH1 and TH2, respectively. The contact holes TH1 and TH2 are located in the insulating layer 108 and the interlayer dielectric layer 110, for example. The above-mentioned active device T is described with a top gate type thin film transistor, but the disclosure is not limited to this. In other embodiments, the above-mentioned active device T may also be a bottom gate type thin film transistor, or other suitable thin film transistors. In this embodiment, based on the consideration of conductivity, the gate electrode G, the control line CL, the data line DL, the signal line SL, the drain electrode D, and the source electrode S are made of metal materials. However, the present invention is not limited to this. According to other embodiments, the gate G, the control line CL, the data line DL, the signal line SL, the drain D, and the source S can also be made of other conductive materials, such as alloys and metal materials. Nitride, metal material oxide, metal material oxynitride, or other suitable materials, or a stacked layer of metal material and other conductive materials.

The sensing element substrate 100 further includes a black matrix BM, a color filter pattern CF, and a cover plate OC. The black matrix BM is located on the active device T, the color filter pattern CF is located on the black matrix BM, and the color filter pattern CF includes, for example, a red filter pattern, a green filter pattern, and a blue filter pattern. The color filter pattern CF is provided corresponding to the opening area of the pixel array substrate 200. The black matrix BM is, for example, arranged corresponding to the control line CL, the data line DL, the signal line SL, the active device T and the photosensitive unit 102. The light collimating structure 104 is located between the substrate SUB and the photosensitive unit 102. In this embodiment, the orthographic projection of the light collimating structure 104 on the substrate SUB falls within the orthographic projection of the photosensitive unit 102 on the substrate SUB, so that the aperture ratio or viewing angle of the pixel array substrate 200 is not affected. The cover plate OC is opposite to the substrate SUB, and the material of the cover plate OC is, for example, a flexible substrate (such as a plastic substrate) or a rigid substrate (such as a glass substrate or a quartz substrate). In this embodiment, the material of the light collimating structure 104 is a metal material. However, the present invention is not limited to this. According to other embodiments, the material of the light collimating structure 104 may also use other conductive materials, such as alloys, nitrides of metallic materials, oxides of metallic materials, oxynitrides of metallic materials, Or other suitable materials, or stacked layers of metal materials and other conductive materials.

The sensing element substrate 100 in this embodiment is assembled with its cover plate OC facing the pixel array substrate 200, that is, the cover plate OC is located between the pixel array substrate 200 and the substrate SUB. The user's finger F touches or approaches the outer side of the substrate SUB of the sensing element substrate 100. For example, when the user's finger F touches the substrate SUB of the sensing element substrate 100, the light emitted by the backlight module 400 After L1 illuminates the fingerprint peaks and troughs, the peaks and troughs will reflect light beams with different intensities, so that multiple photosensitive units 102 corresponding to the peaks and troughs receive reflected beams with different intensities, so that the sensing element substrate 100 can be used Fingerprint image of the person. The light collimating structure 104 can make the light reflected by the peaks and valleys of the fingerprints travel toward the photosensitive unit 102 more collimated. In this way, the fingerprint resolution of the sensing element substrate 100 can be improved. In this embodiment, the drain electrode D, the source electrode S and the light collimating structure 104 belong to the same film layer, that is, they are patterned from the same material layer. In other words, the material of the light collimating structure 104 is the same as the material of the drain electrode D and the source electrode S. For example, in an embodiment where the material of the drain electrode D and the source electrode S includes a metal material, the light collimating structure 104 also includes a metal material. Since there is no need to attach a light collimating film to the display device 10, the display device 10 has the advantages of lightness and thinness and good fingerprint resolution.

The photosensitive unit 102 is located on the buffer layer 106. The photosensitive unit 102 includes a first electrode layer 102A, a second electrode layer 102B opposite to the first electrode layer 102A, and a sensing layer 102S sandwiched between the first electrode layer 102A and the second electrode layer 102B. The second electrode layer 102B is closer to the pixel array substrate 200 than the first electrode layer 102A. The first electrode layer 102A is electrically connected to the signal line SL. In this embodiment, referring to FIG. 3B, the first electrode layer 102A is electrically connected to the signal line SL through the contact hole TH3. The material of the first electrode layer 102A includes a transparent conductive material, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium gallium zinc oxide, or other suitable oxides or at least two of the foregoing. The stacked layers. The material of the sensing layer 102S is, for example, silicon-rich oxide (SRO) or other suitable materials.

The photosensitive unit 102 is electrically connected to the active device T. For example, the second electrode layer 102B is electrically connected to the active device T. In this embodiment, the second electrode layer 102B is electrically connected to the active device T through the contact hole TH4, and the contact hole TH4 is located in the insulating layer 108, for example. The material of the second electrode layer 102B is, for example, molybdenum, aluminum, titanium, copper, gold, silver or other conductive materials or a stack of two or more of the foregoing materials.

In this embodiment, the sensing device substrate 100 further includes an insulating layer 112 and a passivation layer 114. The insulating layer 112 covers the active device T and the light collimating structure 104, the passivation layer 114 is located on the insulating layer 112, and the passivation layer 114 covers the photosensitive layer. The unit 102 (for example, the first electrode layer 102A, the second electrode layer 102B).

The interlayer dielectric layer 110 is located between the substrate SUB and the photosensitive unit 102 and has a plurality of through holes H1. The light collimating structure 104 includes a plurality of extension portions 104A, and each extension portion 104A is located in each through hole H1 of the interlayer dielectric layer 110. The through hole H1 and the contact holes TH1 and TH2 of the interlayer dielectric layer 110 are formed in, for example, A layer of photoresist material (not shown) is formed on the entire interlayer dielectric layer 110, then a photomask is used to pattern the photoresist material to form a patterned photoresist layer, and then the interlayer dielectric layer 110 is etched to form through holes H1 and Contact holes TH1 and TH2, and then remove the patterned photoresist material. Since the through hole H1 and the contact holes TH1 and TH2 are made of the same photomask, no additional photomask is required to make the through hole H1, which helps to reduce the manufacturing cost and does not need to retest the etching of the interlayer dielectric layer 110 parameter. In this embodiment, the light collimating structure 104 extends to the through hole H2 of the insulating layer 108 and contacts the top surface of the buffer layer 106.

The extension direction of the extension portion 104A is substantially parallel to the normal direction of the substrate SUB plate, and the spacing S1 between the extension portions 104A is 2 μm to 10 μm, and the spacing S1 is small enough to allow light to pass between adjacent extension portions 104A Traveling at a small angle, the light reflected by the peaks and troughs of the fingerprint can be controlled to be more collimated toward the photosensitive unit 102. In this embodiment, the light collimating structure 104 further includes a plurality of island portions 104B located above the extension portion 104A, and the island portions 104B are located outside the opening H1.

In this embodiment, the cross section of the extension 104A along the section line D-D' is sheet-shaped (see Fig. 3D). When viewed from the top view, the extension 104A is a strip extending along the first direction D1, so that the light collimating structure 104 has the advantage of simple manufacturing process. For example, the extension 104A is substantially parallel to the data line DL and The signal line SL. In one embodiment, the number of extension portions 104A is greater than two. The aspect ratio of each extension 104A is 0.1 to 6, and the aspect ratio is large enough to further improve the light collimation effect. In this embodiment, the light collimating structure 104 is located on the buffer layer 106. In other embodiments, the light collimating structure 104 may extend in the through hole H3 in the buffer layer 106 (see FIG. 4) and contact the substrate SUB.

FIG. 5A is a schematic top view of a sensing device substrate 100a according to another embodiment of the disclosure. The main difference between the sensing element substrate 100a in FIG. 5A and the sensing element substrate 100 in FIG. 2 is that the extension portion 104A further includes a plurality of first sub-extending portions E1 and a plurality of second sub-extending portions E2. In one embodiment, each second sub-extending portion E2 and each first sub-extending portion E1 are alternately arranged, so that the second sub-extending portion E2 and the first sub-extending portion E1 form a mesh pattern, which can further improve the light collimation effect . And the number of the first sub-extension part E1 is more than two, and the number of the second sub-extension part E2 is more than two. In this embodiment, the second sub-extending portion E2 is in the shape of a sheet extending along the second direction D2. For example, the second sub-extending portion E2 is substantially parallel to the control line CL. In other embodiments, when the second sub-extending portion E2 is viewed from a top view, the second sub-extending portion E2 and the first sub-extending portion E1 form a non-right angle A1 (see FIG. 5B).

FIG. 6A is a schematic cross-sectional view of a sensing device substrate 100b according to another embodiment of the disclosure. The main difference between the sensing element substrate 100b in FIG. 6A and the sensing element substrate 100 in FIG. 3B is that each extension 104A has a lower portion P1 and an upper portion P2 connected, and the lower portion P1 and the gate electrode G belong to the same film layer, namely Patterned by the same material layer. In other words, the material of the lower part P1 and the material of the gate G are the same. For example, in an embodiment where the material of the gate electrode G includes a metal material, the lower portion P1 also includes a metal material. The upper part P2 belongs to the same film layer as the drain electrode D and the source electrode S, that is, it is patterned by the same material layer. In other words, the material of the upper part P2 is the same as the material of the drain electrode D and the source electrode S. For example, in an embodiment where the material of the drain electrode D and the source electrode S includes a metal material, the upper part P2 also includes a metal material. Since there is no need to attach a light collimating film layer (not shown) to the display device 10, the display device 10 has the advantages of thinness and good fingerprint resolution at the same time. The lower portion P1 of each extension portion 104A contacts the substrate SUB, and the aspect ratio of the combination of the upper portion P2 and the lower portion P1 of each extension portion 104A is 0.1-6.

FIG. 6B is a schematic cross-sectional view of a sensing device substrate 100c according to another embodiment of the disclosure. The main difference between the sensing element substrate 100c of this embodiment and the sensing element substrate 100b of FIG. 6A is that the lower portion P1 of each extension 104A extends to the through hole H2 of the insulating layer 108 and contacts the top surface of the buffer layer 106.

FIG. 7A is a schematic cross-sectional view of a sensing device substrate 100d according to another embodiment of the disclosure. The main difference between the sensing element substrate 100d of this embodiment and the sensing element substrate 100 of FIG. 3B is that the light collimating structure 104 and the gate electrode G belong to the same film layer, that is, they are patterned from the same material layer. In other words, the material of the light collimating structure 104 and the material of the gate electrode G are the same. For example, in an embodiment where the material of the gate electrode G includes a metal material, the light collimating structure 104 also includes a metal material. Since there is no need to attach a light collimating film layer (not shown) to the display device 10, the display device 10 has the advantages of thinness and good fingerprint resolution at the same time. In this embodiment, the light collimating structure 104 extends to the through hole H2 of the insulating layer 108 and contacts the top surface of the buffer layer 106.

FIG. 7B is a schematic cross-sectional view of a sensing device substrate 100e according to another embodiment of the disclosure. The main difference between the sensing element substrate 100e of this embodiment and the sensing element substrate 100d of FIG. 7A is that the light collimating structure 104 extends in the through hole H3 in the buffer layer 106 and contacts the substrate SUB.

In summary, the sensing element substrate of the embodiment of the present disclosure, by arranging the light collimating structure between the substrate and the photosensitive unit, can make the light reflected by the wave crests and troughs of the fingerprint travel more toward the photosensitive unit. Collimation, and at least part of the gate or drain and the light collimation structure belong to the same layer, the material of the gate or drain is the same as at least part of the light collimation structure, because there is no need to attach additional light The collimating film is layered on the display device, so the display device can have the advantages of both lightness and thinness and good fingerprint resolution. The orthographic projection of the light collimating structure on the substrate falls within the orthographic projection of the photosensitive unit on the substrate, so that the aperture ratio or viewing angle of the pixel array substrate is not affected.

10: Display device 100: Sensing component substrate 100a: Sensing element substrate 100b: Sensing element substrate 100c, 100d, 100e: sensing element substrate 102: photosensitive unit 102A: first electrode layer 102B: second electrode layer 102S: Sensing layer 104: Light collimation structure 104A: Extension 104B: Island 106: buffer layer 108: insulating layer 110: Interlayer dielectric layer 112: Insulation layer 114: passivation layer 200: pixel array substrate 300: display medium layer 400: Backlight module A1: Angle A-A’: Cut line B-B’: Sectional line BM: black matrix C-C’: Cut line CF: Color filter pattern CH: semiconductor channel layer CL: control line D: Dip pole D1: First direction D2: second direction D-D’: Sectional line DL: Data line E1: The first extension E2: second sub extension F: Finger G: Gate H1: Through hole L1: light OC: cover plate P1: lower part P2: upper part S: source S1: Spacing SL: signal line SM: shading layer SUB: Substrate T: Active component TH1, TH2, TH3, TH4: contact hole H1, H2, H3: through hole

Read the following detailed description and match the corresponding diagrams to understand many aspects of this disclosure. It should be noted that many of the features in the drawing are not drawn in actual proportions according to the standard practice in the industry. In fact, the size of the feature can be increased or decreased arbitrarily to facilitate the clarity of the discussion. FIG. 1 is a schematic cross-sectional view of a display device according to an embodiment of the disclosure. FIG. 2 is a schematic plan view of the sensing element substrate of FIG. 1. FIG. Fig. 3A is a schematic cross-sectional view taken along the section line A-A' of Fig. 2. Fig. 3B is a schematic cross-sectional view taken along the line B-B' in Fig. 2. Fig. 3C is a schematic cross-sectional view taken along the line C-C' in Fig. 2. Fig. 3D is a schematic cross-sectional view according to the section D-D' of Fig. 2. FIG. 4 is a schematic cross-sectional view of a sensing device substrate according to another embodiment of the disclosure. FIG. 5A is a schematic top view of a sensing device substrate according to another embodiment of the disclosure. FIG. 5B is a schematic top view of a sensing device substrate according to another embodiment of the disclosure. FIG. 6A is a schematic cross-sectional view of a sensing device substrate according to another embodiment of the disclosure. FIG. 6B is a schematic cross-sectional view of a sensing device substrate according to another embodiment of the disclosure. FIG. 7A is a schematic cross-sectional view of a sensing device substrate according to another embodiment of the disclosure. FIG. 7B is a schematic cross-sectional view of a sensing device substrate according to another embodiment of the disclosure.

100: Sensing element array substrate

102: photosensitive unit

102A: first electrode layer

102B: second electrode layer

102S: Sensing layer

104: Light collimation structure

104A: Extension

104B: Island

106: buffer layer

108: insulating layer

110: Interlayer dielectric layer

112: Insulation layer

114: passivation layer

B-B’: Sectional line

BM: black matrix

CF: Color filter pattern

CH: semiconductor channel layer

D: Dip pole

G: Gate

H1, H2: Through hole

OC: cover plate

S: source

S1: Spacing

SM: shading layer

SUB: Substrate

T: Active component

TH1, TH2, TH4: contact hole

Claims (11)

A sensing element substrate includes: a substrate; an active element located on the substrate, wherein the active element includes a drain; a photosensitive unit located on the substrate and electrically connected to the active element; and a light collimator The straight structure is located between the substrate and the photosensitive unit, wherein the orthographic projection of the light collimating structure on the substrate falls within the orthographic projection of the photosensitive unit on the substrate, and the drain and the light collimating structure belong to the same The film layer, and the drain electrode is made of the same material as the light collimating structure. The sensing element substrate according to claim 1, further comprising: an interlayer dielectric layer located between the substrate and the photosensitive unit and having a plurality of through holes, wherein the light collimating structure includes a plurality of extensions, each The extension portion is located in each of the through holes of the interlayer dielectric layer, the extension direction of the extension portions is substantially parallel to a normal direction of the substrate, and the distance between the extension portions is 2 micrometers to 10 micrometers . The sensing element substrate according to claim 2, further comprising: a control line located on the substrate and electrically connected to the active element, wherein the extension portions are substantially perpendicular to the control line. The sensing element substrate according to claim 2, wherein each The aspect ratio of the extension is 0.1-6. The sensing element substrate according to claim 2, wherein the extension portions further include: a plurality of first sub-extending portions; and a plurality of second sub-extending portions, wherein each of the second sub-extending portions and each of the first sub-extending portions The sub-extensions are arranged alternately so that the second sub-extensions and the first sub-extensions form a mesh pattern, and the number of the first sub-extensions is greater than two. The number is greater than 2. The sensing element substrate according to claim 5, further comprising: a control line located on the substrate and electrically connected to the active element, wherein the extension direction of the second sub-extension portions is staggered with the control line. The sensing element substrate according to claim 5, further comprising: a control line located on the substrate and electrically connected to the active element, wherein the second sub-extensions are substantially parallel to the control line. A sensing element substrate includes: a substrate; an active element located on the substrate, wherein the active element includes a gate and a drain; a photosensitive unit located on the substrate and electrically connected to the active element; as well as A light collimating structure is located between the substrate and the photosensitive unit, wherein the orthographic projection of the light collimating structure on the substrate falls within the orthographic projection of the photosensitive unit on the substrate, and the light collimating structure includes a plurality of An extension portion, the extension direction of the extension portions is substantially parallel to a normal direction of the substrate, each extension portion has a lower portion and an upper portion connected to each other, the lower portion and the gate belong to the same film layer, and the lower portion The material of is the same as the material of the gate, the upper part and the drain belong to the same film layer, and the material of the upper part is the same as the material of the drain. The sensing element substrate according to claim 8, wherein the lower portion of each extension part contacts the substrate, and the aspect ratio of each extension part is 0.1-6. The sensing element substrate according to claim 8, further comprising: an interlayer dielectric layer located between the substrate and the photosensitive unit and having a plurality of through holes, wherein the light collimating structure further includes the extension portions There are a plurality of islands above the upper part, the upper part and the lower part of each extension part are located in the through holes of the interlayer dielectric layer, and the island parts are located outside the through openings. A sensing element substrate includes: a substrate; an active element located on the substrate, wherein the active element includes a gate and a drain; a photosensitive unit located on the substrate and electrically connected to the active element; as well as A light collimating structure is located between the substrate and the photosensitive unit, wherein the orthographic projection of the light collimating structure on the substrate falls within the orthographic projection of the photosensitive unit on the substrate, and the gate is collimated with the light The structure belongs to the same film layer, and the material of the gate electrode is the same as that of the light collimating structure.

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