TW202247431A - Dual sensing device - Google Patents

Abstract

A dual sensing device includes a first substrate, a first sensing element layer and a second sensing element layer. The first sensing element layer is disposed on the first substrate and includes a plurality of first sensing elements. The second sensing element layer is disposed on the first sensing element layer and includes a plurality of second sensing elements, wherein an orthogonal projection of the second sensing element on the first substrate is overlapped with an orthogonal projection of the first sensing element on the first substrate.

Description

Dual Sensing Device

The present invention relates to a sensing device, and in particular to a dual sensing device.

In order to provide the information needed to build a smart living environment, various sensors have been widely used in daily life, for example, various optical sensors for sensing biological characteristics such as fingerprints, vein images, heart rate, blood oxygen concentration, etc. device. Due to the increasing demand for the use of various sensors, it will be a future application trend to integrate various sensors and provide multiple sensing functions with a single machine. However, different sensors have different structures, and how to simplify the integrated structure of multiple sensors is still one of the goals for relevant industry players to seek improvement.

The present invention provides a dual sensing device with a simplified integrated structure.

An embodiment of the present invention proposes a dual sensing device, comprising: a first substrate; a first sensing element layer located on the first substrate and including a plurality of first sensing elements; and a second sensing element layer, It is located on the first sensing element layer and includes a plurality of second sensing elements, wherein the orthographic projection of the second sensing element on the first substrate overlaps the orthographic projection of the first sensing element on the first substrate.

In an embodiment of the present invention, the above-mentioned first sensing element is a visible light sensing element.

In an embodiment of the present invention, the above-mentioned first sensing element is a fingerprint sensing element.

In an embodiment of the present invention, the above-mentioned dual-sensing device further includes a light-shielding layer located on the first sensing element and having an opening, the first sensing element includes a sensing layer, and the opening is on the orthographic projection of the first substrate The orthographic projection of the superimposed sensing layer on the first substrate.

In an embodiment of the present invention, the above-mentioned dual sensing device further includes an optical angle control layer located on the first sensing element, and the orthographic projection of the optical angle control layer on the first substrate overlaps the first sensing element on the first sensing element. Orthographic projection of a substrate.

In an embodiment of the present invention, the above-mentioned optical angle control layer is an electrode of the second sensing element.

In an embodiment of the present invention, the above-mentioned second sensing element is an infrared light sensing element.

In an embodiment of the present invention, the above-mentioned first sensing element and the second sensing element are invisible light sensing elements with different wavelengths.

In an embodiment of the present invention, the above-mentioned second sensing element is an organic photodiode.

In one embodiment of the present invention, the above-mentioned organic photodiode includes an electron transport layer, a hole transport layer, and a photosensitive layer located between the electron transport layer and the hole transport layer, and the photosensitive layer is located between the electron transport layer and the second hole transport layer. between a substrate.

In an embodiment of the present invention, the above-mentioned dual sensing device further has an opening area, and the first sensing element and the second sensing element are located outside the opening area.

In an embodiment of the present invention, the above-mentioned dual sensing device further includes a first switch element located on the first substrate and electrically connected to the first sensing element.

In an embodiment of the present invention, the above-mentioned dual sensing device further includes a second substrate, wherein the second sensing element layer is located between the second substrate and the first sensing element layer.

In an embodiment of the present invention, the above-mentioned dual sensing device further includes a second switch element located between the second sensing element layer and the second substrate and electrically connected to the second sensing element.

In an embodiment of the present invention, the above-mentioned dual sensing device further includes a light source located on the side of the first substrate opposite to the first sensing element layer.

In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail together with the accompanying drawings.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Throughout the specification, the same reference numerals denote the same elements. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element, or Intermediate elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to physical and/or electrical connection. Furthermore, "electrically connected" or "coupled" may mean that other elements exist between two elements.

It should be understood that although the terms "first", "second", "third", etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and and/or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first "element," "component," "region," "layer" or "section" discussed below could be termed a second element, component, region, layer or section without departing from the teachings herein.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" are intended to include plural forms including "at least one" or meaning "and/or" unless the content clearly dictates otherwise. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. It should also be understood that when used in this specification, the terms "comprising" and/or "comprising" designate the existence of said features, regions, integers, steps, operations, elements and/or parts, but do not exclude one or more Existence or addition of other features, regions, integers, steps, operations, elements, parts and/or combinations thereof.

Additionally, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe one element's relationship to another element as shown in the figures. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the figures. For example, if the device in one of the figures is turned over, elements described as being on the "lower" side of other elements would then be oriented on "upper" sides of the other elements. Thus, the exemplary term "below" can encompass both an orientation of "below" and "upper," depending on the particular orientation of the drawing. Similarly, if the device in one of the figures is turned over, elements described as "below" or "beneath" other elements would then be oriented "above" the other elements. Thus, the exemplary terms "below" or "beneath" can encompass both an orientation of above and below.

FIG. 1 is a schematic cross-sectional view of a dual sensing device 10 according to an embodiment of the invention. The dual sensing device 10 includes: a first substrate 110; a first sensing element layer 120 located on the first substrate 110 and including a plurality of first sensing elements S1; and a second sensing element layer 130 located on the first The sensing element layer 120 includes a plurality of second sensing elements S2 , wherein the orthographic projection of the second sensing element S2 on the first substrate 110 overlaps the orthographic projection of the first sensing element S1 on the first substrate 110 .

In the dual-sensing device 10 according to an embodiment of the present invention, by making the orthographic projection of the first sensing element S1 on the first substrate 110 partially overlap or completely overlap the orthographic projection of the second sensing element S2 on the first substrate 110 The projection can simplify the integrated structure of the dual sensing device 10 while increasing the opening area OA of the dual sensing device 10 . Hereinafter, the implementation of each element of the dual sensing device 10 will be continuously described with reference to FIG. 1 , but the present invention is not limited thereto.

In this embodiment, the first substrate 110 may be a transparent substrate or an opaque substrate, and its material may be a ceramic substrate, a quartz substrate, a glass substrate, a polymer substrate or other suitable materials, but is not limited thereto.

In this embodiment, the first sensing element layer 120 may include a plurality of first sensing elements S1, a flat layer PL2, an insulating layer I4, and a light-shielding layer SH, wherein the first sensing element S1 may be a visible light sensing element, For example, a fingerprint sensing element, but not limited thereto. For example, the first sensing element S1 may include an electrode E11, a sensing layer SR and an electrode E12, the sensing layer SR is located between the electrode E11 and the electrode E12, and the electrode E12 may be located between the planar layer PL2 and the insulating layer I4 . The light-shielding layer SH can be located on the first sensing element S1 and has an opening O1. The orthographic projection of the opening O1 on the first substrate 110 can overlap the orthographic projection of the sensing layer SR on the first substrate 110, so as to regulate the absorption of the sensing layer SR. light range. In some embodiments, the first sensing element S1 may be an invisible light sensing element.

For example, the material of the electrode E11 can be molybdenum, aluminum, titanium, copper, gold, silver or other conductive materials, or an alloy combination or stack of two or more of the above materials. The material of the sensing layer SR may be Silicon-Rich Oxide (SRO), Silicon-Rich Oxide doped with Germanium, or other suitable materials. The material of the electrode E12 is preferably a transparent conductive material, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium gallium zinc oxide or other suitable oxides or at least two of the above Stack layers. The material of the flat layer PL2 may include organic materials, such as acrylic material, siloxane material, polyimide material, epoxy material or a laminate of the above materials, But not limited to this. The material of the insulating layer I4 may include a transparent insulating material, such as silicon oxide, silicon nitride, silicon oxynitride, a stack of the above materials, or other suitable materials. The material of the light-shielding layer SH may include materials such as metal, metal oxide, metal oxynitride, black resin or graphite, or a stack of the above materials, but is not limited thereto.

In this embodiment, the dual sensing device 10 may further include a driving circuit layer DL1 located between the first sensing element layer 120 and the first substrate 110 . The driving circuit layer DL1 may include elements or circuits required by the dual sensing device 10 , such as driving elements, switching elements, power lines, driving signal lines, timing signal lines, detection signal lines, and the like. For example, the driving circuit layer DL1 can be formed by using a thin film deposition process, a lithography process and an etching process, and the driving circuit layer DL1 can include an active element array, wherein the active element array can include a plurality of first switching elements arranged in an array T1, and the plurality of first switching elements T1 are respectively electrically connected to the plurality of first sensing elements S1.

Specifically, the driving circuit layer DL1 may include a first switching element T1, a buffer layer I1, a gate insulating layer I2, an interlayer insulating layer I3, and a planarization layer PL1. The first switching element T1 may be composed of a semiconductor layer CH1 , a gate GE1 , a source SE1 and a drain DE1 . The area where the semiconductor layer CH1 overlaps the gate GE1 can be regarded as the channel area of the first switching element T1. The gate insulating layer I2 is located between the gate GE1 and the semiconductor layer CH1 , and the interlayer insulating layer I3 is disposed between the source SE1 and the gate GE1 and between the drain DE1 and the gate GE1 . The gate GE1 and the source SE1 can respectively receive signals from eg the driving element, and the electrode E11 of the first sensing element S1 can be electrically connected to the drain DE1 through the via VA1 in the planar layer PL1 . For example, when the gate GE1 receives a signal to turn on the first switching element T1, the signal received by the source SE1 can be transmitted to the electrode E11 of the first sensing element S1 through the drain DE1. In other embodiments, the driving circuit layer DL1 may further include more insulating layers and conductive layers as required.

For example, the material of the semiconductor layer CH1 may include silicon semiconductor material (such as polysilicon, amorphous silicon, etc.), oxide semiconductor material, organic semiconductor material, and the material of the gate GE1, the source SE1 and the drain DE1 may include Metals with good electrical conductivity, such as aluminum, molybdenum, titanium, copper and other metals, or alloys or laminates of the above metals, but not limited thereto.

In this embodiment, the second sensing element layer 130 is stacked on the first sensing element layer 120, and the second sensing element layer 130 may include a plurality of second sensing elements S2, planar layers PL3, PL4 and The insulating layer I5, wherein the second sensing element S2 can be an invisible light sensing element, such as an infrared light sensing element, so that the second sensing element S2 can be used, for example, to sense blood oxygen concentration, or to capture vein images for use It is used for anti-counterfeiting in vivo, or for capturing fingerprint images. For example, the second sensing element S2 may be an organic photodiode (Organic Photodiode, OPD), and the second sensing element S2 may include an electrode E21, a hole transport layer HT, a photosensitive layer PT, an electron transport layer ET And the electrode E22, wherein the electron transport layer ET, the photosensitive layer PT and the hole transport layer HT are located between the electrode E21 and the electrode E22, and the photosensitive layer PT can be located between the electron transport layer ET and the first substrate 110, but not limited thereto . In some embodiments, the photosensitive layer PT may be located between the hole transport layer HT and the first substrate 110 . In addition, in some embodiments, both the first sensing element S1 and the second sensing element S2 may be invisible light sensing elements, and the sensing wavelength ranges of the first sensing element S1 and the second sensing element S2 Can be different.

For example, the electrode E21 can be an opaque conductive material, such as a silver layer or an aluminum layer; the hole transport layer HT can include PEDOT:PSS (poly(3,4-ethylene-dioxythiophene:polystyrene sulfonate)) or a high work function metal oxide (such as MoO ₃ ); the photosensitive layer PT may include a photosensitive polymer that absorbs in the infrared (IR) region and/or near-infrared (NIR) region, such as P3HT:PCBM (poly(3-hexylthiophene):[ 6,6]-phenyl-C61-butyric acid methyl ester) or PDPP3T-PCBM (poly-(diketopyrrole-terthiophene):[6,6]-phenyl-C61-butyric acid methyl ester); the electron transport layer ET can include oxide Zinc (ZnO) or aluminum zinc oxide (AZO); and the material of the electrode E22 can be a transparent conductive material, such as indium tin oxide (ITO).

In some embodiments, the first switching element T1 of the driving circuit layer DL1 can also be electrically connected to the electrode E21 or the electrode E22 of the second sensing element S2, so that the dual sensing device 10 can also utilize the first switching element T1 is used to control the signal reception of the second sensing element S2, and then the signals of the first sensing element S1 and the second sensing element S2 are received at different time periods through timing control.

In this embodiment, the dual sensing device 10 may further include a light source LS, the light source LS may be disposed on the side of the first substrate 110 opposite to the first sensing element layer 120, and the light source LS may include a visible light source and an invisible light source. light source. In some embodiments, the light source LS may include a plurality of light emitting diodes, wherein some of the light emitting diodes may emit visible light LV, and the other part of the light emitting diodes may emit invisible light LI, such as infrared light. For example, the visible light LV emitted by the light source LS can be reflected by the finger FG and enter the first sensing element S1 , and the invisible light LI emitted by the light source LS can be reflected by the finger FG and enter the second sensing element S2 .

In some embodiments, the dual sensing device 10 may further include a flat layer PL5 and a glass cover CG, wherein the flat layer PL5 may be located between the glass cover CG and the second sensing element layer 130, and the user may use its The finger FG touches the glass cover CG to perform sensing such as fingerprints, finger vein anti-counterfeiting, and blood oxygen concentration.

Furthermore, the dual sensing device 10 may have an open area OA, wherein the first sensing element S1 and the second sensing element S2 may be located outside the opening area OA, that is, the opening area OA is not provided with the first sensing element. The element S1 and the second sensing element S2. Since the orthographic projection of the first sensing element S1 on the first substrate 110 overlaps the orthographic projection of the second sensing element S2 on the first substrate 110 , the opening area OA can have an increased area. In this way, the visible light LV and invisible light LI from the light source can reach the finger FG through the opening area OA without being blocked by the first sensing element S1 and the second sensing element S2, so that the first sensing element S1 and the second sensing element S1 The second sensing element S2 can receive incident light with increased intensity and reduced noise, thereby improving its sensing performance.

In this embodiment, the electrode E21 can also be used to regulate the light receiving angle of the sensing layer SR of the first sensing element S1 , that is, the electrode E21 can be used as a light angle control layer of the first sensing element S1 . For example, the orthographic projection of the electrode E21 on the first substrate 110 can overlap the orthographic projection of the first sensing element S1 on the first substrate 110, and the electrode E21 can also face the first sensing element along the sidewall IW of the insulating layer I5. S1 is extended, so that the electrode E21 can block the light from the top and left top of the first sensing element S1, and the visible light LV can only pass through the flat layer PL3 and the insulating layer I5 between the electrode E21 and the light shielding layer SH after being reflected by the finger FG The lateral light-transmitting opening OP in enters the sensing layer SR of the first sensing element S1. In this way, only light with a large oblique angle can enter the sensing layer SR through the openings OP and O1 . Experiments have proved that this design can effectively improve the sensing effect of the first sensing element S1 . In addition, the invisible light LI reflected by the finger FG can enter the electron transport layer ET of the second sensing element S2 first, so that the second sensing element S2 can have better photoelectric conversion efficiency (EQE).

In the following, other embodiments of the present invention will be described continuously using FIGS. 2 to 3, and the component numbers and related contents of the embodiment in FIG. A description of the technical content. For the description of omitted parts, reference may be made to the embodiment in FIG. 1 , which will not be repeated in the following description.

FIG. 2 is a schematic cross-sectional view of a dual sensing device 20 according to an embodiment of the invention. The dual sensing device 20 includes a first substrate 110, a driving circuit layer DL1, a first sensing element layer 120, a second sensing element layer 130B, and a light source LS, and the second sensing element S2 of the second sensing element layer 130B The orthographic projection of the first sensing element S1 of the first sensing element layer 120 on the first substrate 110 overlaps the orthographic projection of the first substrate 110 .

Compared with the dual sensing device 10 shown in FIG. 1, the difference of the dual sensing device 20 shown in FIG. 2 is that the dual sensing device 20 further includes a second substrate 140, wherein the second sensing element layer 130B may be located between the second substrate 140 and the first sensing element layer 120 , and the first sensing element layer 120 and the second sensing element layer 130B may be disposed on the first substrate 110 and the second substrate 140 respectively. In this way, the fabrication of the dual sensing device 20 can be completed by pairing the first sensing element layer 120 disposed on the first substrate 110 with the second sensing element layer 130B disposed on the second substrate 140 .

In this embodiment, the second sensing element layer 130B may include a plurality of second sensing elements S2, planar layers PL8, PL9, and an insulating layer I9, and the planar layer PL9 may be located between the second sensing element S2 and the first sensing element. Between the sensing element layer 120 , the electron transport layer ET of the second sensing element S2 may be located between the photosensitive layer PT and the second substrate 140 .

In this embodiment, the dual sensing device 20 may further include an optical angle control layer AC, and the optical angle control layer AC may be located between the insulating layer I5 and the planar layer PL6 . Specifically, the orthographic projection of the light angle control layer AC on the first substrate 110 can overlap the orthographic projection of the first sensing element S1 on the first substrate 110, especially the light angle control layer AC can overlap the opening O1 of the light shielding layer SH, and at the same time The light angle control layer AC can also extend toward the first sensing element S1 along the sidewall IW of the insulating layer I5 , so that the light angle control layer AC can block the light from the top and left top of the first sensing element S1 . In this way, only light with a large oblique angle can enter the sensing layer SR through the openings OP and O1, so that the sensing effect of the first sensing element S1 can be improved.

In some embodiments, the dual sensing device 20 may further include a driving circuit layer DL2 located between the second sensing element layer 130B and the second substrate 140 . The driving circuit layer DL2 may include elements or circuits required by the dual sensing device 20 , such as the signal line SL, and the electrode E22 of the second sensing element S2 may be electrically connected to the signal line SL. In some embodiments, the second sensing element S2 may be electrically connected to the first switching element T1 of the driving circuit layer DL1 through the signal line SL and/or the peripheral wiring.

FIG. 3 is a schematic cross-sectional view of a dual sensing device 30 according to an embodiment of the invention. The dual sensing device 30 includes a first substrate 110, a driving circuit layer DL1, a first sensing element layer 120, a second sensing element layer 130B, a light source LS, a second substrate 140, and an optical angle control layer AC. The orthographic projection of the second sensing element S2 of the sensing element layer 130B on the first substrate 110 overlaps the orthographic projection of the first sensing element S1 of the first sensing element layer 120 on the first substrate 110 .

Compared with the dual sensing device 20 shown in FIG. 2 , the difference of the dual sensing device 30 shown in FIG. 3 is that the dual sensing device 30 further includes 140 between the driving circuit layer DL3, and the driving circuit layer DL3 may include a plurality of second switching elements T2 arranged in an array.

For example, in this embodiment, the driving circuit layer DL3 may include the second switching element T2, the buffer layer I6, the gate insulating layer I7, the interlayer insulating layer I8 and the planarization layer PL7. The second switching element T2 may be composed of a semiconductor layer CH2, a gate GE2, a source SE2, and a drain DE2, and the electrode E22 of the second sensing element S2 may be electrically connected to the drain through the via VA2 in the planar layer PL7. DE2 enables the dual sensing device 30 to use the first switching element T1 and the second switching element T2 to control the signal reception of the first sensing element S1 and the second sensing element S2 respectively. The structure of the second switch element T2 may be similar to that of the first switch element T1 , which will not be repeated here.

In addition, the aforementioned buffer layers I1, I6, gate insulating layers I2, I7, interlayer insulating layers I3, I8, and insulating layers I4, I5, I9 may be made of transparent insulating materials, such as silicon oxide, silicon nitride, oxynitride, etc. Silicon or a stack of the above materials, but the present invention is not limited thereto. The material of the flat layers PL1-PL9 may include transparent insulating materials, such as organic materials, acrylic materials, siloxane materials, polyimide materials, epoxy materials etc., but not limited to this. Buffer layers I1, I6, gate insulating layers I2, I7, interlayer insulating layers I3, I8, insulating layers I4, I5, I9 and flat layers PL1~PL9 may also have a single-layer structure or a multi-layer structure respectively, and the multi-layer structure is such as the above insulation The lamination of any two or more layers in the material can be combined and changed as required.

In summary, the dual sensing device of the present invention overlaps the first sensing element of the first sensing element layer on the first substrate by making the orthographic projection of the second sensing element of the second sensing element layer on the first substrate The orthographic projection of the substrate can simplify the integrated structure of the dual sensing device, and at the same time increase the opening area of the dual sensing device, so as to improve the sensing effect of the sensing element.

Although the present invention has been disclosed above with the embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field may make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention should be defined by the scope of the appended patent application.

10, 20, 30: double sensing device 110: the first substrate 120: the first sensing element layer 130, 130B: the second sensing element layer 140: second substrate AC: light angle control layer CG: glass cover CH1, CH2: semiconductor layer DE1, DE2: drain DL1, DL2, DL3: drive circuit layer E11, E12, E21, E22: electrodes ET: electron transport layer FG: finger GE1, GE2: gate HT: hole transport layer I1, I6: buffer layer I2, I7: gate insulation layer I3, I8: interlayer insulating layer I4, I5, I9: insulation layer IW: side wall LI: invisible light LS: light source LV: visible light O1: Open OP: side light opening OA: open area PL1~PL9: flat layer PT: photosensitive layer S1: the first sensing element S2: Second sensing element SE1, SE2: source SH: Shading layer SL: signal line SR: sensing layer T1: first switching element T2: second switching element VA1, VA2: through hole

FIG. 1 is a schematic cross-sectional view of a dual sensing device 10 according to an embodiment of the invention. FIG. 2 is a schematic cross-sectional view of a dual sensing device 20 according to an embodiment of the invention. FIG. 3 is a schematic cross-sectional view of a dual sensing device 30 according to an embodiment of the invention.

10:Double sensing device

110: the first substrate

120: the first sensing element layer

130: the second sensing element layer

CG: glass cover

CH1: semiconductor layer

DE1: drain

DL1: Drive circuit layer

E11, E12, E21, E22: electrodes

ET: electron transport layer

FG: finger

GE1: Gate

HT: hole transport layer

I1: buffer layer

I2: Gate insulating layer

I3: interlayer insulating layer

I4, I5: insulating layer

IW: side wall

LI: invisible light

LS: light source

LV: visible light

O1: Open

OP: side light opening

OA: open area

PL1~PL5: flat layer

PT: photosensitive layer

S1: the first sensing element

S2: Second sensing element

SE1: source

SH: Shading layer

SR: sensing layer

T1: first switching element

VA1: through hole

Claims (15)

A dual sensing device comprising: first substrate; a first sensing element layer located on the first substrate and including a plurality of first sensing elements; and The second sensing element layer is located on the first sensing element layer and includes a plurality of second sensing elements, wherein the orthographic projection of the second sensing elements on the first substrate overlaps the first sensing element. Orthographic projection of the sensing element on the first substrate. The dual sensing device as claimed in claim 1, wherein the first sensing element is a visible light sensing element. The dual-sensing device as claimed in claim 1, wherein the first sensing element is a fingerprint sensing element. The dual-sensing device according to claim 1, further comprising a light-shielding layer located on the first sensing element and having an opening, the first sensing element includes a sensing layer, and the opening is located on the first sensing element An orthographic projection of a substrate overlaps an orthographic projection of the sensing layer on the first substrate. The dual sensing device according to claim 1, further comprising an optical angle control layer located on the first sensing element, and the orthographic projection of the optical angle control layer on the first substrate overlaps the first Orthographic projection of the sensing element on the first substrate. The dual sensing device as claimed in claim 5, wherein the light angle control layer is an electrode of the second sensing element. The dual sensing device as claimed in claim 1, wherein the second sensing element is an infrared light sensing element. The dual sensing device according to claim 1, wherein the first sensing element and the second sensing element are invisible light sensing elements with different wavelengths. The dual sensing device as claimed in claim 1, wherein the second sensing element is an organic photodiode. The dual sensing device according to claim 9, wherein the organic photodiode comprises an electron transport layer, a hole transport layer, and a photosensitive layer between the electron transport layer and the hole transport layer, and The photosensitive layer is located between the electron transport layer and the first substrate. The dual sensing device according to claim 1 further has an opening area, and the first sensing element and the second sensing element are located outside the opening area. The dual-sensing device as claimed in claim 1 further includes a first switch element located on the first substrate and electrically connected to the first sensing element. The dual sensing device according to claim 1, further comprising a second substrate, wherein the second sensing element layer is located between the second substrate and the first sensing element layer. The dual-sensing device as claimed in claim 13 further includes a second switch element located between the second sensing element layer and the second substrate and electrically connected to the second sensing element. The dual-sensing device according to claim 1, further comprising a light source located on the side of the first substrate opposite to the first sensing element layer.

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