TW202234495A - 製造半導體製品的方法及其系統 - Google Patents

製造半導體製品的方法及其系統 Download PDF

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TW202234495A
TW202234495A TW110147126A TW110147126A TW202234495A TW 202234495 A TW202234495 A TW 202234495A TW 110147126 A TW110147126 A TW 110147126A TW 110147126 A TW110147126 A TW 110147126A TW 202234495 A TW202234495 A TW 202234495A
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wafer
adhesive sheet
tape
carrier
backside
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文成 張
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馬來西亞商益納利科技私人有限公司
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    • B24—GRINDING; POLISHING
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    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
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Abstract

本發明公開了一種用於製造半導體製品的方法，包括以下步驟：部分切割晶圓；將一層或多層黏合片施加至載板上；將部分切割的晶圓轉移至載板上的黏合片上；將晶圓的背面研磨至期望的厚度以形成分離的裸晶，並從所述載板上移除所述分離的裸晶，其中，從所述載板移除所述分離的裸晶是將一層附加的黏合片黏附至所述分離的裸晶的背面，並用加熱板壓在所述附加的黏合片上。

Description

製造半導體製品的方法及其系統
本發明關於一種用於製造半導體製品的方法及其系統。
近年來，積體電路封裝的普及提升，並且目前需要進一步減小其厚度。因此，目前需要將大約350 µm的半導體晶片厚度減小至大約50 µm-100 μm或更小。此類薄的半導體晶片可以透過首先將表面保護片黏貼至晶圓的電路表面，隨後研磨晶圓背面，且在之後切割晶圓來獲得。當研磨後的晶圓厚度極小時，在晶圓切割時可能發生晶片斷裂和晶片破裂。
已有許多與製造半導體製品相關的技術被提出以進一步改進該系統。例如，公開號為US 8679895B2的美國專利公開了與使用薄晶圓製造技術製造的積體電路（IC）電路感測器相關的實施例，該技術包括利用研磨前切割（DBG）的處理，這可以提高可靠性並最小化晶圓上的應力影響。雖然其它實施例利用面朝上安裝，但是透過貫穿接觸使面朝下安裝成為可能。公開號為US 6558975B2的另一件美國專利公開了一種生產半導體元件的方法，包括以下步驟：提供具有表面和背面的晶圓，表面配備有半導體電路；形成深度小於晶圓厚度的凹槽，所述凹槽從晶圓電路表面延伸；將表面保護片黏貼至晶圓電路表面上，研磨晶圓的背面，進而減小晶圓的厚度，隨後將晶圓分割成多個單獨的晶片，且在其之間具有間隔；將壓敏黏合片黏貼至晶圓的背面上，將黏合劑層暴露於能量源；以及從晶圓電路表面剝離表面保護片。Weng等人的公開敘述了一種在半導體元件上進行應力切割的方法，用於減少缺陷以及增強裸晶強度，藉此在研磨晶圓裸晶之前進行部分應力切割。該公開進一步描述了消除機械和吸收性雷射分割（sigulation）的相關缺陷，諸如前面和背面表面剝蝕（ablation）以及頂面、背面和邊緣碎裂（chipping）。除此之外，公開號為US 6337258B1的美國專利公開的技術敘述了一種透過沿著切割線（dicing lines）或晶片切割線在晶圓的元件形成表面中形成凹槽來分割晶圓的方法，藉此凹槽比成品晶片的厚度更深。該方法進一步公開了一種固持構件，該固持構件附著在晶圓的元件形成表面上，並且晶圓的底表面被研磨和拋光至成品晶片的厚度，進而在透過多孔吸附固持的同時在被轉移之前將晶圓分成晶片。
前述專利文獻描述了許多用於製造半導體製品的系統和方法，它們是所提出的發明中的關鍵組成部分。由此產生了一個主要的缺點，因為習知技術中公開的系統和方法缺少一種從半導體晶圓上移除黏合片而不必將它們從所述晶圓上剝離的裝置。因此，需要這樣一種系統，該系統能夠在研磨過程之前進行切割，並且還採用一種手段以透過簡單地向所述片施加足夠的壓力和熱來消除黏合片的黏合性。
本發明的目的是減少並潛在地消除習知方法因在背面研磨後切割晶圓引起的背面碎裂的風險，藉此本發明透過在研磨前先分割來反轉該製程。本發明的另一個目的是提高晶圓裸晶強度。
除此之外，本發明的另一個目的是提供一種將晶圓裸晶與載板分離的方法，而不必剝離層壓在晶圓的一個表面上的黏合片。
在本發明的一個方面，提供了一種用於製造半導體製品的方法，該方法包括以下步驟：部分切割晶圓，將一層或多層黏合片施加至載板上，將所述部分切割的晶圓轉移至所述載板上的所述黏合片上；將所述晶圓的背面研磨至期望的厚度以形成分離的裸晶，並從所述載板上移除所述分離的裸晶，其中，從所述載板移除所述分離的裸晶是將一層附加的黏合片黏附至所述分離的裸晶的背面，並用加熱板壓在所述附加的黏合片上。
較佳地，所述黏合片包括熱膠帶和紫外線（UV）膠帶。
較佳地，所述附加的黏合片是切晶帶。
較佳地，所述載板由矽和/或玻璃製成。
較佳地，所述晶圓被部分切割至總晶圓厚度的20%。
較佳地，所述加熱板被壓在所述黏合片和所述分離的裸晶上持續一段預定期間。
在本發明的另一方面，提供了一種用於製造半導體製品的系統，包括鋸切刀片，用於部分切割晶圓；黏合片施加機構，用於將一層或多層黏合片施加至載板（203）上；轉移機構，用於將所述部分切割的晶圓（200）轉移至所述載板（203）上；以及背面磨輪，用於研磨所述晶圓的背面以形成分離的裸晶，其中，從所述載板移除所述分離的裸晶是將一層附加的黏合片黏附至所述分離的裸晶的背面，並用加熱板壓在所述附加的黏合片上。
較佳地，所述系統進一步包括分選機構，用於在檢查時對裸晶進行分選。
較佳地，所述載板由矽和/或玻璃製成。
較佳地，所述黏合片包括熱膠帶、紫外線（UV）膠帶和切晶帶。
所屬技術領域中具有通常知識者將容易理解，本發明非常適於實現所述目標並獲得所提到的目的和優點，以及其中固有的目的和優點。本文所描述的實施例並不旨在限制本發明的範圍。
在下文中，將根據本發明的較佳實施例並透過參考所附描述和附圖來描述本發明。然而，應當理解，將描述限制到本發明的較佳實施例僅是為了便於討論本發明，並且可以預期的是，所屬技術領域中具有通常知識者可以在不脫離所附申請專利範圍的情況下設計出各種修改。
現在將透過參考附圖的示例更詳細地描述本發明。
圖1示出用於根據本發明製造半導體製品的方法的流程圖，該方法包括以下步驟：首先在步驟101，接收半導體製品，較佳的為半導體晶圓200，然後在步驟102，透過進料品檢（IQC）進行檢查。IQC是在生產開始前控制製造產品的材料和零件品質的過程。在較佳的實施例中，本發明採用了一種被稱為「研磨前切割」的方法，其中晶圓200在被研磨以形成多個分離的裸晶300之前被切割。在步驟103，安裝鋸切刀片201以用於分割製程，在步驟104，分割製程將晶圓200切割成多個分離的裸晶300。較佳地，鋸切刀片201可以將晶圓200的前面部分切割至期望的深度。
在步驟105，卸下鋸切刀片201，並替換成後磨輪202，用於在步驟107研磨晶圓200的背面。較佳地，後磨輪202可以是杯形磨輪，杯形磨輪可以包括磨料晶粒或磨料砂礫、黏結材料和孔隙，並且可以製造成由磨料晶粒、黏結和孔隙的相對體積百分比確定的各種等級或結構。較硬的輪用於粗研磨，以獲得更長的輪壽命。較軟的輪用於精細研磨，以確保自修整能力（self-dressing ability）。在特定實施例中，背面研磨製程是較佳的，因為其比最近開發的較新的化學或電漿蝕刻製程更快且成本更低。然而，可能會出現一些缺點，諸如在背面研磨過程期間可能會施加機械應力和熱，並且還可能出現劃痕。晶圓200表面上的這些劃痕圖案和劃痕深度與在背面研磨過程期間施加在晶圓200上的砂礫大小和壓力成正比。此外，半導體裸晶300上的劃痕深度和背面表面粗糙度與裸晶300的強度直接相關，因此晶圓200的成品背面表面盡可能光滑或拋光是很重要的。
在步驟106，透過黏合片施加機構將一層或多層黏合片附著至載板203，部分切割的晶圓200將黏附至黏合片的黏合面。在薄半導體晶圓200製程中，在透過轉移機構將部分切割的晶圓200轉移至載板203上時，使用一層或多層黏合片將晶圓200暫時黏合至剛性載板203。較佳地，載板203由例如但不限於矽或玻璃等材料製成。由於其熱穩定性和機械穩定性以及耐化學性，玻璃可以較佳的作為載板203。由於玻璃載板203是透明的，因此也可以監測與該玻璃載板的黏合和解除黏合。此外，玻璃載板203可以被清潔和重複使用，進而導致成本降低和保護環境。
在較佳的實施例中，黏合片可以包括熱膠帶204、紫外線（UV）膠帶209、切晶帶206等。熱膠帶204，也稱為熱釋放膠帶，用於固持應用、轉移應用、載板遮蔽應用和保護應用，特別是用於半導體晶圓200。熱膠帶204可以是單面的，其具有單層的能夠熱剝離的黏合劑，或是雙面的，其中一面具有能夠熱剝離的黏合劑，並且另一面是基底表面黏合劑。這兩種類型都使用聚酯薄膜作為基底。熱膠帶204也可用於在切割期間固持半導體晶圓200或防止零件移動。
切晶帶206是在晶圓200分割期間使用的背襯膠帶，在晶圓200微製程之後切割半導體材料片。切晶帶207在切割過程期間將稱為裸晶300的半導體片固持在一起，將它們安裝至薄金屬框架。稍後在電子裝置製造過程中從切晶帶206移除裸晶300。此外，切晶帶206可以由聚氯乙烯（PVC）、聚烯烴或帶有黏合劑的聚乙烯背襯材料製成，以將裸晶固持在適當位置。在一些情況下，切晶帶206將具有釋放襯墊，該釋放襯墊將在將切晶帶206安裝至晶圓200的背面之前被移除。
類似於熱膠帶204，UV膠帶210較佳為雙面的，其中另一個黏合劑面附著至晶圓200的正面，以形成包括晶圓200、熱膠帶204和UV膠帶210的另一個組件，如圖5所示。UV膠帶210是許多類型的切晶帶206中的一種，其中在分割後透過暴露於UV光來破壞其黏合，允許黏合劑在切割期間更強，同時仍然允許清潔和容易移除。適合在背面研磨過程期間保護晶圓200的表面，並且在切割過程中與環形框架208保持晶圓200。可選地，UV膠帶209也可以適用於各種工件，諸如陶瓷、玻璃、藍寶石等。
在較佳的實施例中，後磨輪202從晶圓200的背面將該晶圓研磨至期望的厚度，例如，在0.850 mm至0.175 mm之間，如步驟107所示。在步驟108，檢查研磨的晶圓200或分離的裸晶300的厚度，之後在步驟109，從載板移除分離的裸晶，這將在本文中參考圖3至圖6進一步討論。步驟110至步驟112示出了在透過分選機構針對其相應的應用分選之前，使用檢查設備檢查分離的裸晶的背面和頂面的步驟。
圖2示出晶圓200的背面研磨之前的切割製程的流程圖。首先，在切割製程期間部分切割晶圓200，其中鋸切刀片201經由晶圓200的正面切割至晶圓200總厚度的大約20%。在晶圓200上切割預定數量的切口時，較佳的在彼此垂直的兩個方向上橫向跨該晶圓200，使得切口在晶圓200上形成方形。進一步，然後將晶圓200黏附至附著至載板203上的熱膠帶204上，其中將正面黏附至熱膠帶204的一個黏合部分上。熱膠帶204將有助於防止晶圓在背面研磨過程期間四處移動。如上文所提及的，接著用後磨輪202將將晶圓200的背面研磨至期望的厚度。
圖3至圖6示出用於將一層或多層黏合片施加至半導體晶圓200和載板203的兩種技術的流程圖。在較佳的實施例中，在晶圓200被部分切割之後和研磨之前應用此技術較佳。參考圖3，第一技術採用將熱膠帶204層壓或施加至放置在工作盤（chuck table）205上的載板203上。一旦熱膠帶204被施加至載板203上，晶圓200被放置在工作盤205上，且晶圓200的正面從工作盤205面向上，其中晶圓200的正面接著被黏附至熱膠帶204的另一個黏合面，諸如圖3所示，形成包括晶圓200、熱膠帶204和載板203的組件。之後為了研磨晶圓200，該組件被轉移，其中，該組件被翻轉以使載板203遠離後磨輪202並且該晶圓200的背面暴露於後磨輪202。
圖4示出了用於從熱膠帶204和載板203移除分離的裸晶300的步驟。將切晶帶206附著至也被稱為晶圓環的金屬框架環207，之後該金屬框架環207被放置在已經被研磨的分離的裸晶300的背面。附著後，加熱板208被輕輕地壓在切晶帶204上，以在一段預定的時間，例如30秒或更少，將足夠的壓力施加至分離的裸晶300上。來自加熱板208的熱將削弱分離的裸晶300上的熱膠帶204的黏性，同時維持切晶帶206的黏性，進而當切晶帶206和加熱板208被提起時，允許分離的裸晶替代地黏附至切晶帶206並從熱膠帶204移除。隨後，附著至切晶帶206和金屬框架環207的分離的裸晶300將被帶到下一站用於後續處理和/或拋光。
在另一實施例中，如圖5所示的第二技術採用類似於第一技術將熱膠帶204層壓至載板203上。呈紫外線（UV）膠帶209形式的下一層黏合片被施加在熱膠帶204的頂部。然後，圖6示出了從UV膠帶209移除分離的裸晶300的製程，類似於第一技術，切晶帶206被施加至分離的裸晶304上，然後加熱板208被壓在切晶帶206上以移除UV膠帶209的黏性。可選地，可以採用附加步驟以在加熱板208旁邊的UV膠帶209上進行UV照射，以提升從UV膠帶209上移除分離的裸晶的效果。
本公開包括包含在所附申請專利範圍中的內容，以及前面描述的內容。儘管本發明已經以其較佳形式進行了一定程度的詳細描述，但是應當理解，較佳形式的本公開僅透過示例的方式進行，並且在不脫離本發明的範圍的情況下，可以對結構細節以及部件的組合和佈置進行許多改變。
101～112:步驟 200:晶圓 201:鋸切刀片 202:後磨輪 203:載板 204:熱膠帶 205:工作盤 206:切晶帶 207:金屬框架環 208:加熱板 209:紫外線（UV）膠帶 300:裸晶
為了便於理解本發明，在附圖中示出了較佳實施例，當結合以下描述考慮這些實施例時，本發明、其結構和操作及其許多優點將很容易被理解和領會。 圖1示出製造半導體晶圓的製程的流程圖。 圖2示出半導體晶圓的部分切割和背面研磨製程的流程圖。 圖3示出將一層或多層黏合片施加至載板和晶圓正面的第一技術的流程圖。 圖4示出從載板移除晶圓的第一技術的流程圖。 圖5示出將黏合片施加至載板和晶圓正面的第二技術的流程圖。 圖6示出從載板移除晶圓的第二技術的流程圖。
101~112:步驟

Claims (10)

  1. 一種用於製造半導體製品的方法，包括以下步驟： 部分切割晶圓（200）； 將一層或多層黏合片施加至載板（203）上； 將部分切割的所述晶圓（200）轉移至所述載板（203）上的所述黏合片上； 將所述晶圓（200）的背面研磨至期望的厚度，以形成分離的裸晶（300）；以及 從所述載板（203）移除所述分離的裸晶（300）； 其中，從所述載板（203）移除所述分離的裸晶（300）是將一層附加的黏合片黏附至所述分離的裸晶（300）的背面，並用加熱板（208）壓在所述附加的黏合片上。
  2. 如請求項1所述之方法，其中，所述黏合片包括熱膠帶（204）和紫外線（UV）膠帶（209）。
  3. 如請求項1或2所述之方法，其中所述附加的黏合片是切晶帶（206）。
  4. 如前述請求項中任一項所述之方法，其中，所述載板（203）由矽和/或玻璃製成。
  5. 如前述請求項中任一項所述之方法，其中，所述晶圓（200）被切割至總晶圓（200）厚度的20%。
  6. 如前述請求項中任一項所述之方法，其中，所述加熱板（208）被壓在所述附加的黏合片和所述分離的裸晶（300）上持續一段預定期間。
  7. 一種用於製造半導體製品的系統，包括： 鋸切刀片（201）用於部分切割晶圓（200）； 黏合片施加機構，用於將一層或多層黏合片施加至載板（203）上； 轉移機構，將部分切割的所述晶圓（200）轉移至所述載板（203）上；以及 背面磨輪(202)，用於研磨所述晶圓（200）的背面以形成分離的裸晶（300）； 其中從所述載板（203）移除所述分離的裸晶（300）是將一層附加的黏合片黏附至所述分離的裸晶（300）的背面，並用加熱板（208）壓在所述附加的黏合片上。
  8. 如請求項7所述之系統，進一步包括分選機構，用於在檢查時對所述裸晶進行分選。
  9. 如請求項7或8所述之系統，其中所述載板（203）由矽和/或玻璃製成。
  10. 如請求項7至9中任一項所述之系統，其中所述黏合片包括熱膠帶（204）、紫外線（UV）膠帶（209）和切晶帶（206）。
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