TW202224050A - 加速在半導體裝置製造中之光譜測量 - Google Patents
加速在半導體裝置製造中之光譜測量 Download PDFInfo
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Abstract
本發明揭示一種用於在校準、疊對及配方形成期間透過白光照明之干涉光譜學而加速半導體裝置製造期間之度量衡活動中之光譜測量之裝置及方法。
Description
通常,與半導體裝置製作相關聯之度量衡活動中所使用之光譜資訊係透過在校準、疊對活動、配方形成及其他度量衡活動期間進行的相對耗費時間之光譜測量而獲取。光譜測量多次增加總體處理時間,藉此減小處理效率。因此,需要對穩健光譜資訊之加速獲取,從而以保持製造速度及效率之一方式實現一寬廣範圍之度量衡活動。
根據本發明之教示,提供一種干涉光譜學度量衡工具,該干涉光譜學度量衡工具包含:一干涉顯微鏡,其經組態以在一聚焦透鏡之垂直輸送期間依據源自白光照明之光束形成一干涉圖,該干涉圖係由與該干涉顯微鏡相關聯之一單像素偵測器擷取;及一電腦,其經組態以透過將一傅立葉變換應用於該干涉圖而使該干涉圖再現為一光譜。
根據本發明之又一特徵,該等光束包含自一寬頻反射器反射之一光束以便在該干涉圖中表徵該白光照明之一光譜。
根據本發明之又一特徵,該寬頻反射器被實施為一鏡。
根據本發明之又一特徵,該寬頻反射器被實施為裸矽。
根據本發明之又一特徵,該等光束包含自一經處理晶圓反射之一光束以便在該干涉圖中表徵白光照明之一光譜與該經處理晶圓之光譜反射率之一光譜之一乘積。
根據本發明之又一特徵,該干涉顯微鏡包含一林尼克(Linnik)光束分裂器立方體。
根據本發明之教示,亦提供一種加速在半導體裝置製造度量衡中光譜資料之獲取之方法;該方法包含:
藉助一干涉顯微鏡將白光照明分裂成兩個光束;
在一單像素偵測器上接收一干涉圖,該干涉圖係由該等光束之重新組合所形成;及將一傅立葉變換應用於該干涉圖以便使該干涉圖再現為表徵該白光照明之一光譜。
根據本發明之又一特徵,亦提供將該等光束中之一者反射出一寬頻反射器。
根據本發明之又一特徵,該寬頻反射器被實施為一鏡。
根據本發明之又一特徵,該寬頻反射器被實施為一裸晶圓。
根據本發明之教示,亦提供藉助該干涉顯微鏡將白光照明分裂成一參考光束及一測試光束;
在疊對序列期間於該白光照明之聚焦期間,在該單像素偵測器上擷取一干涉圖,該干涉圖係由該等光束之重新組合所形成,該測試光束係自具有微結構之一經處理晶圓反射;及將一傅立葉變換應用於該干涉圖以便使該干涉圖再現為表徵該白光照明及該經處理晶圓之光譜反射率兩者之一複合光譜。
根據本發明之又一特徵,亦提供將該複合光譜除以該白光照明之該光譜以便產生表徵該經處理晶圓之一反射率之一光譜。
根據本發明之教示,亦提供一種干涉光譜學度量衡工具,該干涉光譜學度量衡工具包含:一干涉顯微鏡,其經組態以依據白光照明形成一干涉圖,該顯微鏡具有:一可水平輸送之參考鏡或一可輸送光束分裂器立方體;一聚焦透鏡,其固定於距一經處理晶圓一焦距處;一個二維像素陣列偵測器,其經組態以根據源自該白光照明之光束之一改變之光學路徑距離來擷取多個像素特有干涉圖;及一電腦,其經組態以將一傅立葉變換應用於該等像素特有干涉圖中之每一者上以便產生與該經處理晶圓之每一對應區域相關聯之一像素特有光譜。
根據本發明之又一特徵,該電腦進一步經組態以建構至少一個所選擇形心波長與各別所選擇頻寬之一合成影像。
根據本發明之又一特徵,該電腦進一步經組態以將一度量應用於該合成影像。
根據本發明之又一特徵,該度量係選自由該經處理晶圓之疊對度量調查區(ROI)、平均反射率、3S、對比度及目標不對稱性組成之群組。
根據本發明之教示,亦提供一種加速在半導體裝置製造度量衡中高光譜資料之獲取之方法,該方法包含:藉助一干涉顯微鏡將白光照明分裂成兩個光束;在維持經處理晶圓上之聚焦之同時改變該等光束所行進之一光學路徑距離;根據該等光束所行進之該改變之光學路徑距離在一個二維像素陣列偵測器上擷取一像素特有干涉圖;將一傅立葉變換應用於每一像素特有干涉圖以便產生該經處理晶圓之一像素特有光譜;及指派與一所選擇像素、形心頻率及頻寬成比例之像素灰階。
根據本發明之又一特徵,該改變該光學路徑距離係透過該參考鏡之水平輸送而實施。
根據本發明之又一特徵,該改變該光學路徑距離係透過該光束分裂器之輸送而實施。
在以下說明中,陳述眾多細節以促進對本發明之一清晰理解,且應瞭解,可在不具有此等特定細節之情況下實踐本發明。此外,省略眾所周知之方法、組件及程序以突出顯示本發明。
將遍及本文件使用以下術語:
「度量衡活動」包含且並不限於任一度量衡測試或組合式度量衡測試:
「疊對度量衡(OVL)」係指用於評估以某些波長進行最有效評估之上部層圖案與下部層圖案之間的對準之一技術。
OVL方差被計算為內疊對目標及外疊對目標之對稱中心之間的差。
「核心3S (Kernel 3S)」係指係藉由相同疊對目標之三個不同上覆部分計算之OVL之方差的三倍之一度量。當高值可指示不佳之可攜性、隨目標而變之變化、不佳之配方時,其應為儘可能小的。
「相位線性度」係指指示如由不同諧波之貢獻給出之OVL之方差之一度量。
「離焦(through focus)」係被實施為依聚焦位置而變之疊對變化之一度量。
「對比精度」係指目標之間的對比度且依由光柵結構影像處理之可測量高對比度之程度而變。
應瞭解,像素特有干涉圖或光譜與對應晶圓位點相關聯。
本發明係在半導體裝置製造中採用之一干涉光譜學度量衡工具。在一項實施例中,該工具被實施為經組態以在疊對序列期間識別最佳聚焦位置之一疊對工具,且在另一實施例中,該工具被實施為用於促進配方形成及其他度量之一高光譜成像工具。
參考圖1及圖2,圖1係干涉光譜學度量衡工具之一示意性繪示,該干涉光譜學度量衡工具包含連結至一干涉成像顯微鏡
1之一電腦
6,該干涉成像顯微鏡具有一光束分裂器立方體
2、一聚焦立方體
3、一可水平輸送之參考鏡
4、一單像素聚焦偵測器
5、可垂直輸送之聚焦透鏡
7、水平聚焦透鏡
15及一鏡筒透鏡
19。
在於一疊對序列中沿方向Z垂直輸送聚焦透鏡
7期間,由光束分裂器立方體
2分裂白光照明
8成水平光束
12(並被引導至參考鏡
4)及一垂直光束
13(
並被引導至寬頻反射器
9)。經反射光束
12及
13在光束分裂器立方體
2處被重新組合,如在此項技術中已知。根據一實施例,經重新組合光束
14透過鏡筒透鏡
19而引導至聚焦立方體
3且然後被引導至單像素偵測器
5。當水平光束
12與垂直光束
13之間的光學路徑差(OPD)接近零時,連結至單像素偵測器
5之一電腦
6產生一干涉圖作為依OPD (以微米為單位)而變化的一強度計數標繪圖,如圖2中所繪示。一最佳焦點被識別為干涉圖之包絡之最大振幅點。如熟習傅立葉變換光譜學(FTS)者已知,電腦
6透過應用一傅立葉變換而使干涉圖再現為一光譜,舉例而言,如在Robert John Bell之
「 Introductory Fourier Transform Spectroscopy 」中陳述。
圖3A繪示圖2之干涉圖之白光光譜特性在進行傅立葉變換之後的一光譜,且圖3B係透過直接測量、透過光譜測量得到之一光譜。兩個經正規化光譜之一比較展示經FTS得出之光譜與所測量光譜之相似性。圖3A至圖3B之光譜之間的偏差係未以在光譜儀中所採用之偵測器對在FTS光譜中所採用之單像素偵測器
5之回應度進行正規化之一結果。
返回圖1,如所展示,首先將垂直光束
13引導至被實施為一鏡或者一裸晶圓之一寬頻反射器
9。白光照明之所得光譜可用以校準照明光譜。
在獲得一校準光譜之後,針對經處理晶圓
20重複處理程序以便產生複合光譜,該複合光譜係白光照明光譜與經處理晶圓
20之光譜回應度的一乘積。
圖4繪示根據一實施例之用於在疊對序列期間加速光譜資料之獲取之一流程圖,且該流程圖被劃分成兩個階段:一校準階段
30及一獲取階段
34。如所展示,在步驟
31處,自一寬頻反射器
9反射白光照明及垂直光束,如上文所提及。在步驟
32處,擷取一干涉圖,在步驟
33處,將干涉圖變換成白光照明之一光譜或波長光譜。獲取階段
34在步驟
35處開始,在步驟
35中,再次將額外白光照明分裂成兩個光束,且將一垂直光束引導至經處理晶圓
20 ,如圖1中所繪示。在步驟
36處,當聚焦透鏡
7且在疊對序列期間將參考鏡
4固持於一單個位置中時擷取一干涉圖。在步驟
37中,執行干涉圖之一傅立葉變換以產生照明與晶圓反射率之一複合光譜。在步驟
38中,藉由將複合光譜除以照明光譜而使該複合光譜再現為一反射率光譜,如此項技術中已知。
當干涉光譜學度量衡工具被實施為一疊對工具時,其藉由擴寬其用途以在不存在一光譜儀之情況下提供照明源之光譜測量及晶圓反射率而有利地利用現有林尼克光束分裂器干涉儀。當目標係一寬頻反射器時,該工具可用以校準照明源工具(如上文所提及),且當目標被實施為一經處理晶圓時,該工具促進可用於評估處理程序變化及配方形成中之光譜反射率映圖之產生。此外,所得出之光譜頻率資料可有利地用以校正因晶圓處理程序參數(舉例而言,如同膜厚度、折射率)之偏差所致之偏斜疊對測量。
另外,所需干涉資料係在於疊對序列中聚焦期間獲取,而不會影響OVL測量時間。
圖5繪示被實施為一高光譜成像工具之干涉光譜學度量衡工具之一實施例,該高光譜成像工具經組態以根據以干涉方式得出之反射率光譜之形心來合成影像。
該工具包含一可水平輸送之干涉顯微鏡
1h,該可水平輸送之干涉顯微鏡採用一像素陣列偵測器(相機)
10、一可垂直輸送之光束分裂器立方體
2、一聚焦立方體
3、一可水平輸送之參考鏡
4、一聚焦透鏡
7(其固持於距一目標一焦距處)、水平聚焦透鏡
15、一鏡筒透鏡
19、一電腦
6h(其連結至像素陣列偵測器
10且經組態以將每一像素特有干涉圖再現為一像素特有反射率光譜)。在一特定實施例中,電腦
6h進一步經組態以在反射率光譜之基礎上合成與所選擇形心波長及所選擇頻寬成比例之一合成影像。應瞭解,電腦
6h包含所有必要輸入及輸出設備。
圖6繪示根據一實施例之由相機
10擷取之多個像素特有干涉圖
42之一干涉圖集合
40。由相機
10擷取之每一特定干涉圖對應於一光學成像系統中之晶圓平面上之目標晶圓上之一特定位點,藉此在晶圓之每一對應位點處提供穩健光譜資訊。
圖7繪示根據一實施例之在對圖6之像素特有干涉圖中之每一者進行傅立葉變換之後的多個像素特有反射率光譜
52之一光譜集合
50。因此,每一特定光譜在晶圓之每一對應位點處提供穩健光譜資訊。
圖8繪示根據一實施例之在各種合成影像之合成中由圖6之高光譜成像工具採用之操作步驟之一流程圖。
在步驟
61中,由光束分裂器
2分裂白光照明
8,在步驟
62中,在維持經處理目標晶圓
20上之聚焦之同時調變光束
12及
13之光學路徑距離。可透過各種方案調變光束
12及
13 之光學路徑距離。在一特定實施例中,光之光學路徑調變係藉由水平地或垂直地輸送光束分裂器
2或者在另一實施例中在將光束分裂器
2固持於相同位置中時藉由輸送參考鏡
4而達成,然而在另一實施例中,光學路徑調變係透過此等兩種方法之一組合而達成。
在步驟
64中,由相機
10依據經重新組合光束
12及
13擷取一像素特有干涉圖集合
40(如圖6中所展示)。相機
10之每一像素對應於一晶圓位點使得每一所擷取干涉圖對應於自其反射光
12之晶圓之特定位置,如上文所提及。
在步驟
67中,電腦
6h將一傅立葉變換應用於干涉圖集合
40中之每一像素特有干涉圖
42以便使該等像素特有干涉圖再現為像素特有光譜
52之光譜集合
50,如此項技術中已知。
在步驟
68中,指派與一所選擇像素、形心頻率及所選擇頻寬成比例之像素灰階。應瞭解,在一特定實施例中,同時採用複數個像素形心以提供所要解析度。應瞭解,在某些實施例中,灰階被實施為色彩級或強度級。
在步驟
69中,顯示像素陣列偵測器之像素灰階以為與適當度量一起使用做準備。
干涉光譜學在經處理晶圓之高光譜成像中之應用藉由將多個習用光譜測量減少為一單個干涉測量而有利地提供顯著時間節省,該單個干涉測量在再現為光譜之後於晶圓之每一位置處提供穩健光譜資訊。可在研究及開發期間利用此光譜資訊來形成用於客戶操作之一最佳操作參數配方,判定適當疊對參數,且根據最適合於一所選擇度量衡工具之波長提供各種波長觀看選項。
圖9繪示被實施為除上文所闡述之硬體及組態之外的一相機
10及一單像素偵測器
5兩者之組合式干涉光譜學度量衡工具之一實施例。該組合式干涉光譜學度量衡工具根據度量衡需要有利地提供疊對工具或者高光譜成像功能性。
儘管本文中已圖解說明並闡述了本發明之某些特徵,但熟習此項技術者現在將能想到諸多修改、替換、改變及等效形式。因此,應理解,隨附申請專利範圍意欲涵蓋歸屬於本發明之真正精神內之所有此等修改及改變。
1:干涉成像顯微鏡
1h:可水平輸送之干涉顯微鏡
2:光束分裂器立方體/可垂直輸送之光束分裂器立方體/光束分裂器
3:聚焦立方體
4:可水平輸送之參考鏡/參考鏡
5:單像素聚焦偵測器/單像素偵測器
6:電腦
6h:電腦
7:可垂直輸送之聚焦透鏡/聚焦透鏡
8:白光照明
9:寬頻反射器
10:像素陣列偵測器/相機
12:水平光束/經反射光束/光束/經重新組合光束/光
13:垂直光束/經反射光束/光束/經重新組合光束
14:經重新組合光束
15:水平聚焦透鏡
19:鏡筒透鏡
20:經處理晶圓/經處理目標晶圓
40:干涉圖集合/像素特有干涉圖集合
42:像素特有干涉圖
50:光譜集合
52:像素特有反射率光譜/像素特有光譜
Z:方向
在說明書之結束部分中特別指出且明確主張被視為係本發明之標的物。關於本發明,鑒於附圖參考以下詳細說明最清晰地理解構成組件以及其組態與特徵、操作方法、目的及優點,在該等附圖中:
圖1係根據一實施例之採用一干涉成像顯微鏡、被實施為一單像素偵測器之一成像疊對工具之一示意圖;
圖2係根據一實施例之由圖1之成像疊對工具擷取之一干涉圖;
圖3A係根據一實施例之自圖2之干涉圖之一傅立葉變換得出一光譜;
圖3B係根據一實施例之用一光譜儀測量的繪示與自圖3A之干涉圖之傅立葉變換得出之光譜之實質對應性之一光譜。
圖4係根據一實施例之在於一疊對序列中聚焦之同時加速光譜資料之獲取之一方法之一流程圖;
圖5係根據一實施例之採用一干涉成像顯微鏡、被實施為一像素陣列偵測器之一成像疊對工具之一示意圖;
圖6係根據一實施例之由圖5之成像疊對工具擷取之像素特有干涉圖之一干涉圖集合;
圖7係根據一實施例之自圖6之像素特有干涉圖中之每一者之傅立葉變換得出之一光譜集合;
圖8係根據一實施例之加速一經處理晶圓之高光譜成像之一方法之一流程圖;且
圖9係根據一實施例之一組合式干涉顯微鏡疊對與高光譜成像工具之一示意圖;
應瞭解,圖元件並未按比例繪製,且為了清晰起見,各種圖中之對應元件被相同地進行標示。
1:干涉成像顯微鏡
2:光束分裂器立方體/可垂直輸送之光束分裂器立方體/光束分裂器
3:聚焦立方體
4:可水平輸送之參考鏡/參考鏡
5:單像素聚焦偵測器/單像素偵測器
6:電腦
7:可垂直輸送之聚焦透鏡/聚焦透鏡
8:白光照明
9:寬頻反射器
12:水平光束/經反射光束/光束/經重新組合光束/光
13:垂直光束/經反射光束/光束/經重新組合光束
14:經重新組合光束/經處理晶圓/經處理目標晶圓
15:水平聚焦透鏡
19:鏡筒透鏡
Z:方向
Claims (15)
- 一種干涉光譜學度量衡工具,其包括: 一干涉顯微鏡,其經組態以自白光照明形成一干涉圖,該干涉顯微鏡具有: 一可水平輸送的參考鏡或一光束分裂器立方體;及 一聚焦透鏡,其固定於距一經處理晶圓一焦距處; 一個二維像素陣列偵測器,其經組態以根據源自該白光照明之多個光束之一改變的光學路徑距離來擷取多個像素特有干涉圖;及 一電腦,其經組態以將一傅立葉變換應用於該等像素特有干涉圖中之每一者上以便產生與該經處理晶圓之每一對應區域相關聯之一像素特有光譜。
- 如請求項1之工具,其中該電腦進一步經組態以建構至少一個所選擇形心波長與各別所選擇頻寬之一合成影像。
- 如請求項1之工具,其中該電腦進一步經組態以將一度量應用於該合成影像。
- 如請求項1之工具,其中該度量係選自由該經處理晶圓之疊對度量調查區(ROI)、平均反射率、3S、對比度及目標不對稱性組成之群組。
- 如請求項1之工具,其中該電腦進一步經組態以判定來自該光譜的膜厚度。
- 如請求項5之工具,其中該電腦進一步經組態以校正因該膜厚度之偏差所致之一疊對測量。
- 如請求項1之工具,其中該電腦進一步經組態以判定來自該光譜的折射率。
- 如請求項7之工具,其中該電腦進一步經組態以校正因該折射率之偏差所致之一疊對測量。
- 一種加速在半導體裝置製造度量衡中的高光譜資料之獲取之方法,該方法包括: 藉助一干涉顯微鏡將白光照明分裂成兩個光束; 在維持該經處理晶圓上之聚焦之同時改變該等光束所行進之一光學路徑距離; 根據該等光束所行進之該改變之光學路徑距離在一個二維像素陣列偵測器上擷取一像素特有干涉圖; 將一傅立葉變換應用於每一像素特有干涉圖以便產生該經處理晶圓之一像素特有光譜;及 指派與一所選擇像素、形心頻率及頻寬成比例之像素灰階。
- 如請求項9之方法,其中該改變該光學路徑距離係透過一參考鏡之水平輸送而實施。
- 如請求項9之方法,其中該改變該光學路徑距離係透過該光束分裂器之輸送而實施。
- 如請求項9之方法,其進一步包括判定來自該光譜的膜厚度。
- 如請求項12之方法,其進一步包括校正因該膜厚度之偏差所致之一疊對測量。
- 如請求項9之方法,其進一步包括判定來自該光譜的折射率。
- 如請求項14之方法,其進一步包括校正因該折射率之偏差所致之一疊對測量。
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US201662403712P | 2016-10-04 | 2016-10-04 | |
US62/403,712 | 2016-10-04 | ||
WOPCT/US17/48276 | 2017-08-23 | ||
PCT/US2017/048276 WO2018067243A1 (en) | 2016-10-04 | 2017-08-23 | Expediting spectral measurement in semiconductor device fabrication |
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JP6942555B2 (ja) * | 2017-08-03 | 2021-09-29 | 東京エレクトロン株式会社 | 基板処理方法、コンピュータ記憶媒体及び基板処理システム |
WO2020152795A1 (ja) | 2019-01-23 | 2020-07-30 | 株式会社日立ハイテク | 電子ビーム観察装置、電子ビーム観察システム、電子ビーム観察装置における画像補正方法及び画像補正のための補正係数算出方法 |
EP4027121A4 (en) * | 2019-09-03 | 2022-10-12 | National University Corporation Kagawa University | SPECTROMETRY DEVICE |
KR20210041654A (ko) | 2019-10-07 | 2021-04-16 | 삼성전자주식회사 | 반도체 기판 측정 장치, 이를 이용한 반도체 기판 처리 장치 및 반도체 소자 형성 방법 |
WO2021168613A1 (en) | 2020-02-24 | 2021-09-02 | Yangtze Memory Technologies Co., Ltd. | Systems and methods for semiconductor chip surface topography metrology |
CN111386441B (zh) | 2020-02-24 | 2021-02-19 | 长江存储科技有限责任公司 | 用于半导体芯片表面形貌计量的系统 |
CN113008160B (zh) | 2020-02-24 | 2023-02-10 | 长江存储科技有限责任公司 | 用于半导体芯片表面形貌计量的系统和方法 |
WO2021168612A1 (en) | 2020-02-24 | 2021-09-02 | Yangtze Memory Technologies Co., Ltd. | Systems and methods for semiconductor chip surface topography metrology |
US11644419B2 (en) * | 2021-01-28 | 2023-05-09 | Kla Corporation | Measurement of properties of patterned photoresist |
US20240201605A1 (en) * | 2022-12-15 | 2024-06-20 | Applied Materials, Inc. | Combination of inline metrology and on tool metrology for advanced packaging |
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US7324214B2 (en) * | 2003-03-06 | 2008-01-29 | Zygo Corporation | Interferometer and method for measuring characteristics of optically unresolved surface features |
US6963405B1 (en) | 2004-07-19 | 2005-11-08 | Itt Manufacturing Enterprises, Inc. | Laser counter-measure using fourier transform imaging spectrometers |
WO2009079334A2 (en) * | 2007-12-14 | 2009-06-25 | Zygo Corporation | Analyzing surface structure using scanning interferometry |
KR101186464B1 (ko) * | 2011-04-13 | 2012-09-27 | 에스엔유 프리시젼 주식회사 | Tsv 측정용 간섭계 및 이를 이용한 측정방법 |
US9400246B2 (en) * | 2011-10-11 | 2016-07-26 | Kla-Tencor Corporation | Optical metrology tool equipped with modulated illumination sources |
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US20130341310A1 (en) * | 2012-06-22 | 2013-12-26 | Coherent Lasersystems Gmbh & Co. Kg | Monitoring method and apparatus for excimer laser annealing process |
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CN109791896B (zh) | 2023-06-20 |
US11237120B2 (en) | 2022-02-01 |
US20200393373A1 (en) | 2020-12-17 |
TWI747966B (zh) | 2021-12-01 |
TWI800079B (zh) | 2023-04-21 |
US10761034B2 (en) | 2020-09-01 |
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