TWI800079B - 加速在半導體裝置製造中之光譜測量 - Google Patents

加速在半導體裝置製造中之光譜測量 Download PDF

Info

Publication number
TWI800079B
TWI800079B TW110141266A TW110141266A TWI800079B TW I800079 B TWI800079 B TW I800079B TW 110141266 A TW110141266 A TW 110141266A TW 110141266 A TW110141266 A TW 110141266A TW I800079 B TWI800079 B TW I800079B
Authority
TW
Taiwan
Prior art keywords
expediting
semiconductor device
device fabrication
spectral measurement
spectral
Prior art date
Application number
TW110141266A
Other languages
English (en)
Other versions
TW202224050A (zh
Inventor
文森 伊莫
托爾 馬西安諾
伊塔 拉伯特
Original Assignee
美商克萊譚克公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商克萊譚克公司 filed Critical 美商克萊譚克公司
Publication of TW202224050A publication Critical patent/TW202224050A/zh
Application granted granted Critical
Publication of TWI800079B publication Critical patent/TWI800079B/zh

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0675—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating using interferometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28—Investigating the spectrum
    • G01J3/45—Interferometric spectrometry
    • G01J3/453—Interferometric spectrometry by correlation of the amplitudes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/41—Refractivity; Phase-affecting properties, e.g. optical path length
    • G01N21/45—Refractivity; Phase-affecting properties, e.g. optical path length using interferometric methods; using Schlieren methods
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B21/00—Microscopes
    • G02B21/0004—Microscopes specially adapted for specific applications
    • G02B21/0016—Technical microscopes, e.g. for inspection or measuring in industrial production processes
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B21/00—Microscopes
    • G02B21/0004—Microscopes specially adapted for specific applications
    • G02B21/002—Scanning microscopes
    • G02B21/0024—Confocal scanning microscopes (CSOMs) or confocal "macroscopes"; Accessories which are not restricted to use with CSOMs, e.g. sample holders
    • G02B21/0052—Optical details of the image generation
    • G02B21/0056—Optical details of the image generation based on optical coherence, e.g. phase-contrast arrangements, interference arrangements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B21/00—Microscopes
    • G02B21/06—Means for illuminating specimens
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B21/00—Microscopes
    • G02B21/06—Means for illuminating specimens
    • G02B21/08—Condensers
    • G02B21/082—Condensers for incident illumination only
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B21/00—Microscopes
    • G02B21/18—Arrangements with more than one light path, e.g. for comparing two specimens
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B21/00—Microscopes
    • G02B21/36—Microscopes arranged for photographic purposes or projection purposes or digital imaging or video purposes including associated control and data processing arrangements
    • G02B21/365—Control or image processing arrangements for digital or video microscopes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70653—Metrology techniques
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • G03F7/706837—Data analysis, e.g. filtering, weighting, flyer removal, fingerprints or root cause analysis
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/063—Illuminating optical parts
    • G01N2201/0633—Directed, collimated illumination
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/063—Illuminating optical parts
    • G01N2201/0636—Reflectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/066—Modifiable path; multiple paths in one sample

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Multimedia (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Data Mining & Analysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Spectrometry And Color Measurement (AREA)
  • Instruments For Measurement Of Length By Optical Means (AREA)
  • Microscoopes, Condenser (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
TW110141266A 2016-10-04 2017-10-03 加速在半導體裝置製造中之光譜測量 TWI800079B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201662403712P 2016-10-04 2016-10-04
US62/403,712 2016-10-04
WOPCT/US17/48276 2017-08-23
PCT/US2017/048276 WO2018067243A1 (en) 2016-10-04 2017-08-23 Expediting spectral measurement in semiconductor device fabrication

Publications (2)

Publication Number Publication Date
TW202224050A TW202224050A (zh) 2022-06-16
TWI800079B true TWI800079B (zh) 2023-04-21

Family

ID=61832181

Family Applications (2)

Application Number Title Priority Date Filing Date
TW110141266A TWI800079B (zh) 2016-10-04 2017-10-03 加速在半導體裝置製造中之光譜測量
TW106134145A TWI747966B (zh) 2016-10-04 2017-10-03 加速在半導體裝置製造中之光譜測量

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW106134145A TWI747966B (zh) 2016-10-04 2017-10-03 加速在半導體裝置製造中之光譜測量

Country Status (5)

Country Link
US (2) US10761034B2 (zh)
KR (2) KR20230135690A (zh)
CN (1) CN109791896B (zh)
TW (2) TWI800079B (zh)
WO (1) WO2018067243A1 (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6942555B2 (ja) * 2017-08-03 2021-09-29 東京エレクトロン株式会社 基板処理方法、コンピュータ記憶媒体及び基板処理システム
KR102577946B1 (ko) 2019-01-23 2023-09-14 주식회사 히타치하이테크 전자빔 관찰 장치, 전자빔 관찰 시스템, 전자빔 관찰 장치에 있어서의 화상 보정 방법 및 화상 보정을 위한 보정 계수 산출 방법
EP4027121A4 (en) * 2019-09-03 2022-10-12 National University Corporation Kagawa University SPECTROMETRY DEVICE
KR20210041654A (ko) 2019-10-07 2021-04-16 삼성전자주식회사 반도체 기판 측정 장치, 이를 이용한 반도체 기판 처리 장치 및 반도체 소자 형성 방법
WO2021168612A1 (en) 2020-02-24 2021-09-02 Yangtze Memory Technologies Co., Ltd. Systems and methods for semiconductor chip surface topography metrology
WO2021168611A1 (en) 2020-02-24 2021-09-02 Yangtze Memory Technologies Co., Ltd. Systems and methods for semiconductor chip surface topography metrology
WO2021168613A1 (en) 2020-02-24 2021-09-02 Yangtze Memory Technologies Co., Ltd. Systems and methods for semiconductor chip surface topography metrology
WO2021168610A1 (en) 2020-02-24 2021-09-02 Yangtze Memory Technologies Co., Ltd. Systems having light source with extended spectrum for semiconductor chip surface topography metrology
US11644419B2 (en) * 2021-01-28 2023-05-09 Kla Corporation Measurement of properties of patterned photoresist
US20240201605A1 (en) * 2022-12-15 2024-06-20 Applied Materials, Inc. Combination of inline metrology and on tool metrology for advanced packaging
CN117990052A (zh) * 2024-04-03 2024-05-07 浙江求是半导体设备有限公司 载台倾斜角度检测方法和载台调平方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090182528A1 (en) * 2007-12-14 2009-07-16 De Groot Peter Analyzing surface structure using scanning interferometry
US20140239181A1 (en) * 2011-10-26 2014-08-28 Mitsubishi Electric Corporation Film thickness measurement method

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6943353B2 (en) * 2001-10-01 2005-09-13 Ud Technology Corporation Simultaneous multi-beam planar array IR (pair) spectroscopy
US7324214B2 (en) * 2003-03-06 2008-01-29 Zygo Corporation Interferometer and method for measuring characteristics of optically unresolved surface features
US6963405B1 (en) * 2004-07-19 2005-11-08 Itt Manufacturing Enterprises, Inc. Laser counter-measure using fourier transform imaging spectrometers
KR101186464B1 (ko) * 2011-04-13 2012-09-27 에스엔유 프리시젼 주식회사 Ｔｓｖ 측정용 간섭계 및 이를 이용한 측정방법
US9400246B2 (en) * 2011-10-11 2016-07-26 Kla-Tencor Corporation Optical metrology tool equipped with modulated illumination sources
US20130341310A1 (en) * 2012-06-22 2013-12-26 Coherent Lasersystems Gmbh & Co. Kg Monitoring method and apparatus for excimer laser annealing process
KR101486271B1 (ko) 2013-05-13 2015-01-27 한국표준과학연구원 삼차원 박막 두께 형상 측정 방법
KR20160082076A (ko) * 2014-12-30 2016-07-08 한양대학교 산학협력단 간섭계 기반 단층영상 및 표면형상 동시 획득 장치
CN104655032B (zh) * 2015-02-06 2017-05-17 浙江大学 基于正交色散谱域干涉仪的高精度间距测量系统和方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090182528A1 (en) * 2007-12-14 2009-07-16 De Groot Peter Analyzing surface structure using scanning interferometry
US20140239181A1 (en) * 2011-10-26 2014-08-28 Mitsubishi Electric Corporation Film thickness measurement method

Also Published As

Publication number Publication date
KR102580107B1 (ko) 2023-09-18
KR20230135690A (ko) 2023-09-25
CN109791896A (zh) 2019-05-21
TW201834094A (zh) 2018-09-16
CN109791896B (zh) 2023-06-20
US10761034B2 (en) 2020-09-01
US11237120B2 (en) 2022-02-01
WO2018067243A1 (en) 2018-04-12
TWI747966B (zh) 2021-12-01
US20180372652A1 (en) 2018-12-27
KR20190052158A (ko) 2019-05-15
US20200393373A1 (en) 2020-12-17
TW202224050A (zh) 2022-06-16

Similar Documents

Publication Publication Date Title
TWI800079B (zh) 加速在半導體裝置製造中之光譜測量
EP3474337A4 (en) SEMICONDUCTOR DEVICE
EP3416188A4 (en) SEMICONDUCTOR DEVICE
EP3494879A4 (en) BIOMAGNETISMUSMESSVORRICHTUNG
EP3128539A4 (en) Semiconductor device manufacturing method and semiconductor device
EP3264461A4 (en) Semiconductor device
EP3466333A4 (en) BIOMAGNETISM MEASURING DEVICE
EP3460979A4 (en) SEMICONDUCTOR COMPONENT
EP3561886A4 (en) SEMICONDUCTOR COMPONENT
EP3276661A4 (en) Semiconductor device
HK1221070A1 (zh) 半導體器件和用於製造其的方法
EP3240015A4 (en) Semiconductor device and semiconductor device manufacturing method
EP3440696A4 (en) INTEGRATED RESISTANCE FOR SEMICONDUCTOR ELEMENT
EP3276653A4 (en) Semiconductor device
EP3471154A4 (en) SEMICONDUCTOR DEVICE
EP3428964A4 (en) SEMICONDUCTOR DEVICE
EP3514840A4 (en) SEMICONDUCTOR COMPONENT AND SEMICONDUCTOR COMPONENT HOUSING THEREWITH
EP3511990A4 (en) SEMICONDUCTOR DEVICE
EP3564929A4 (en) MEASURING DEVICE AND ASSOCIATED PROGRAM
EP3229281A4 (en) Semiconductor device
EP3255655A4 (en) Semiconductor device
GB201620826D0 (en) Semiconductor device and fabrication method
EP3203243A4 (en) Component measurement device and measurement chip
EP3159933A4 (en) Wide-gap semiconductor device and method for manufacturing wide-gap semiconductor device
EP3471137A4 (en) SEMICONDUCTOR COMPONENT