TW202215730A - 光學元件的雷射誘導向前轉移方法及其裝置、已轉移了光學元件的受體基板的製造方法以及顯示器的製造方法 - Google Patents
光學元件的雷射誘導向前轉移方法及其裝置、已轉移了光學元件的受體基板的製造方法以及顯示器的製造方法 Download PDFInfo
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- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
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- H10W72/07173—Means for moving chips, wafers or other parts, e.g. conveyor belts
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- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
- H10P72/53—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment using optical controlling means
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- Condensed Matter Physics & Semiconductors (AREA)
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020165877 | 2020-09-30 | ||
| JP2020-165877 | 2020-09-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW202215730A true TW202215730A (zh) | 2022-04-16 |
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Family Applications (6)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW110135861A TW202215730A (zh) | 2020-09-30 | 2021-09-27 | 光學元件的雷射誘導向前轉移方法及其裝置、已轉移了光學元件的受體基板的製造方法以及顯示器的製造方法 |
| TW110211331U TWM643626U (zh) | 2020-09-30 | 2021-09-27 | 雷射誘導向前轉移系統、雷射誘導向前轉移裝置、已轉移了光學元件的受體基板的製造系統以及顯示器的製造系統 |
| TW113204743U TWM661925U (zh) | 2020-09-30 | 2021-09-27 | 雷射誘導向前轉移系統、已轉移了光學元件的受體基板的製造系統以及顯示器的製造系統 |
| TW113210118U TWM668963U (zh) | 2020-09-30 | 2021-09-27 | 光遮罩、照射系統及雷射誘導向前轉移系統 |
| TW114202582U TWM673226U (zh) | 2020-09-30 | 2021-09-27 | 光遮罩、照射系統及雷射誘導向前轉移系統 |
| TW112205943U TWM656434U (zh) | 2020-09-30 | 2021-09-27 | 雷射誘導向前轉移系統、已轉移了光學元件的受體基板的製造系統以及顯示器的製造系統 |
Family Applications After (5)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW110211331U TWM643626U (zh) | 2020-09-30 | 2021-09-27 | 雷射誘導向前轉移系統、雷射誘導向前轉移裝置、已轉移了光學元件的受體基板的製造系統以及顯示器的製造系統 |
| TW113204743U TWM661925U (zh) | 2020-09-30 | 2021-09-27 | 雷射誘導向前轉移系統、已轉移了光學元件的受體基板的製造系統以及顯示器的製造系統 |
| TW113210118U TWM668963U (zh) | 2020-09-30 | 2021-09-27 | 光遮罩、照射系統及雷射誘導向前轉移系統 |
| TW114202582U TWM673226U (zh) | 2020-09-30 | 2021-09-27 | 光遮罩、照射系統及雷射誘導向前轉移系統 |
| TW112205943U TWM656434U (zh) | 2020-09-30 | 2021-09-27 | 雷射誘導向前轉移系統、已轉移了光學元件的受體基板的製造系統以及顯示器的製造系統 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20240014200A1 (https=) |
| EP (1) | EP4224538A4 (https=) |
| JP (1) | JP7818918B2 (https=) |
| KR (1) | KR20230074723A (https=) |
| CN (3) | CN216980602U (https=) |
| TW (6) | TW202215730A (https=) |
| WO (1) | WO2022071371A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW202215730A (zh) * | 2020-09-30 | 2022-04-16 | 日商信越化學工業股份有限公司 | 光學元件的雷射誘導向前轉移方法及其裝置、已轉移了光學元件的受體基板的製造方法以及顯示器的製造方法 |
| WO2023228918A1 (ja) * | 2022-05-27 | 2023-11-30 | 京セラ株式会社 | 発光装置および発光装置の製造方法 |
| TWI867551B (zh) * | 2023-05-29 | 2024-12-21 | 前源科技股份有限公司 | 可調整間距的巨量轉移電子元件的方法 |
| CN117766639B (zh) * | 2024-02-20 | 2024-05-31 | 昆山鸿仕达智能科技股份有限公司 | 光伏电池片激光诱导加工设备 |
| CN118522674A (zh) * | 2024-07-22 | 2024-08-20 | 迈为技术(珠海)有限公司 | 基板控制方法、装置、计算机设备、可读存储介质和程序产品 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002062825A (ja) * | 2000-08-18 | 2002-02-28 | Sony Corp | 画像表示装置及びその製造方法 |
| JP4491948B2 (ja) * | 2000-10-06 | 2010-06-30 | ソニー株式会社 | 素子実装方法および画像表示装置の製造方法 |
| JP2002158237A (ja) * | 2000-11-20 | 2002-05-31 | Sony Corp | 素子の転写方法及び素子の実装方法 |
| CN100418487C (zh) | 2003-07-29 | 2008-09-17 | 斯恩蒂斯有限公司 | 用于将纵支架与骨固定元件固定的装置 |
| CN101517700B (zh) * | 2006-09-20 | 2014-04-16 | 伊利诺伊大学评议会 | 用于制造可转移半导体结构、器件和器件构件的松脱策略 |
| KR20130118616A (ko) * | 2012-04-20 | 2013-10-30 | 우시오덴키 가부시키가이샤 | 레이저 리프트 오프 장치 및 레이저 리프트 오프 방법 |
| KR102081286B1 (ko) * | 2013-04-16 | 2020-04-16 | 삼성디스플레이 주식회사 | 레이저 열전사 장치, 레이저 열전사 방법 및 이를 이용한 유기발광 디스플레이 장치 제조방법 |
| JP6106522B2 (ja) * | 2013-05-17 | 2017-04-05 | スタンレー電気株式会社 | 半導体発光素子アレイ |
| US9773945B2 (en) * | 2015-01-30 | 2017-09-26 | Osram Opto Semiconductors Gmbh | Method for producing a semiconductor component and a semiconductor component |
| JP2018060993A (ja) * | 2016-09-29 | 2018-04-12 | 東レエンジニアリング株式会社 | 転写方法、実装方法、転写装置、及び実装装置 |
| JP6918537B2 (ja) | 2017-03-24 | 2021-08-11 | 東レエンジニアリング株式会社 | ピックアップ方法、ピックアップ装置、及び実装装置 |
| JP7094162B2 (ja) | 2017-06-28 | 2022-07-01 | 信越化学工業株式会社 | リフト装置及び使用方法 |
| JP6966281B2 (ja) | 2017-09-29 | 2021-11-10 | 東レエンジニアリング株式会社 | 転写基板、及び転写方法 |
| JP7034771B2 (ja) * | 2018-03-02 | 2022-03-14 | キオクシア株式会社 | 露光装置、露光方法、及び半導体装置の製造方法 |
| KR102652723B1 (ko) * | 2018-11-20 | 2024-04-01 | 삼성전자주식회사 | 마이크로 led 전사 장치 및 이를 이용한 마이크로 led 전사 방법 |
| JP7145096B2 (ja) | 2019-02-12 | 2022-09-30 | 信越化学工業株式会社 | 微小構造体移載装置、スタンプヘッドユニット、微小構造体移載用スタンプ部品及び微小構造体集積部品の移載方法 |
| CN111128843A (zh) * | 2019-12-27 | 2020-05-08 | 深圳市华星光电半导体显示技术有限公司 | Micro LED的转移方法 |
| TW202215730A (zh) * | 2020-09-30 | 2022-04-16 | 日商信越化學工業股份有限公司 | 光學元件的雷射誘導向前轉移方法及其裝置、已轉移了光學元件的受體基板的製造方法以及顯示器的製造方法 |
-
2021
- 2021-09-27 TW TW110135861A patent/TW202215730A/zh unknown
- 2021-09-27 JP JP2021156889A patent/JP7818918B2/ja active Active
- 2021-09-27 TW TW110211331U patent/TWM643626U/zh unknown
- 2021-09-27 TW TW113204743U patent/TWM661925U/zh unknown
- 2021-09-27 TW TW113210118U patent/TWM668963U/zh unknown
- 2021-09-27 TW TW114202582U patent/TWM673226U/zh unknown
- 2021-09-27 TW TW112205943U patent/TWM656434U/zh unknown
- 2021-09-29 CN CN202122368647.8U patent/CN216980602U/zh active Active
- 2021-09-29 US US18/027,807 patent/US20240014200A1/en active Pending
- 2021-09-29 CN CN202221585302.6U patent/CN219371054U/zh active Active
- 2021-09-29 EP EP21875671.6A patent/EP4224538A4/en active Pending
- 2021-09-29 KR KR1020237009310A patent/KR20230074723A/ko not_active Ceased
- 2021-09-29 CN CN202180065158.5A patent/CN116195074A/zh active Pending
- 2021-09-29 WO PCT/JP2021/035794 patent/WO2022071371A1/ja not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| TWM668963U (zh) | 2025-04-11 |
| TWM661925U (zh) | 2024-10-21 |
| TWM656434U (zh) | 2024-06-11 |
| EP4224538A1 (en) | 2023-08-09 |
| KR20230074723A (ko) | 2023-05-31 |
| TWM673226U (zh) | 2025-08-01 |
| US20240014200A1 (en) | 2024-01-11 |
| WO2022071371A1 (ja) | 2022-04-07 |
| JP7818918B2 (ja) | 2026-02-24 |
| CN216980602U (zh) | 2022-07-15 |
| CN219371054U (zh) | 2023-07-18 |
| EP4224538A4 (en) | 2025-01-29 |
| JP2022058237A (ja) | 2022-04-11 |
| TWM643626U (zh) | 2023-07-11 |
| CN116195074A (zh) | 2023-05-30 |
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