TW202215730A - 光學元件的雷射誘導向前轉移方法及其裝置、已轉移了光學元件的受體基板的製造方法以及顯示器的製造方法 - Google Patents

光學元件的雷射誘導向前轉移方法及其裝置、已轉移了光學元件的受體基板的製造方法以及顯示器的製造方法 Download PDF

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TW202215730A
TW202215730A TW110135861A TW110135861A TW202215730A TW 202215730 A TW202215730 A TW 202215730A TW 110135861 A TW110135861 A TW 110135861A TW 110135861 A TW110135861 A TW 110135861A TW 202215730 A TW202215730 A TW 202215730A
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Taiwan
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substrate
laser
optical element
forward transfer
induced forward
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TW110135861A
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Chinese (zh)
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山岡裕
植森信隆
仲田悟基
齋藤剛
小沢周作
佐藤伸一
倉田昌実
佐藤正彦
阿部司
野口毅
宇佐美健人
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日商信越化學工業股份有限公司
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    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0235Method for mounting laser chips
    • H01S5/02375Positioning of the laser chips
    • HELECTRICITY
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    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
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    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
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    • HELECTRICITY
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    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/127The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • HELECTRICITY
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    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/139Manufacture or treatment of devices covered by this subclass using temporary substrates
    • HELECTRICITY
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    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/011Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
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    • H10H20/01Manufacture or treatment
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    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
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    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142Two-dimensional arrangements, e.g. asymmetric LED layout
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    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0446Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
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    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H10P72/53Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment using optical controlling means
    • HELECTRICITY
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    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
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  • Physics & Mathematics (AREA)
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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Laser Beam Processing (AREA)
  • Semiconductor Lasers (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Manufacturing & Machinery (AREA)
TW110135861A 2020-09-30 2021-09-27 光學元件的雷射誘導向前轉移方法及其裝置、已轉移了光學元件的受體基板的製造方法以及顯示器的製造方法 TW202215730A (zh)

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JP2020165877 2020-09-30
JP2020-165877 2020-09-30

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TW110135861A TW202215730A (zh) 2020-09-30 2021-09-27 光學元件的雷射誘導向前轉移方法及其裝置、已轉移了光學元件的受體基板的製造方法以及顯示器的製造方法
TW110211331U TWM643626U (zh) 2020-09-30 2021-09-27 雷射誘導向前轉移系統、雷射誘導向前轉移裝置、已轉移了光學元件的受體基板的製造系統以及顯示器的製造系統
TW113204743U TWM661925U (zh) 2020-09-30 2021-09-27 雷射誘導向前轉移系統、已轉移了光學元件的受體基板的製造系統以及顯示器的製造系統
TW113210118U TWM668963U (zh) 2020-09-30 2021-09-27 光遮罩、照射系統及雷射誘導向前轉移系統
TW114202582U TWM673226U (zh) 2020-09-30 2021-09-27 光遮罩、照射系統及雷射誘導向前轉移系統
TW112205943U TWM656434U (zh) 2020-09-30 2021-09-27 雷射誘導向前轉移系統、已轉移了光學元件的受體基板的製造系統以及顯示器的製造系統

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TW113204743U TWM661925U (zh) 2020-09-30 2021-09-27 雷射誘導向前轉移系統、已轉移了光學元件的受體基板的製造系統以及顯示器的製造系統
TW113210118U TWM668963U (zh) 2020-09-30 2021-09-27 光遮罩、照射系統及雷射誘導向前轉移系統
TW114202582U TWM673226U (zh) 2020-09-30 2021-09-27 光遮罩、照射系統及雷射誘導向前轉移系統
TW112205943U TWM656434U (zh) 2020-09-30 2021-09-27 雷射誘導向前轉移系統、已轉移了光學元件的受體基板的製造系統以及顯示器的製造系統

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US (1) US20240014200A1 (https=)
EP (1) EP4224538A4 (https=)
JP (1) JP7818918B2 (https=)
KR (1) KR20230074723A (https=)
CN (3) CN216980602U (https=)
TW (6) TW202215730A (https=)
WO (1) WO2022071371A1 (https=)

Families Citing this family (5)

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Publication number Priority date Publication date Assignee Title
TW202215730A (zh) * 2020-09-30 2022-04-16 日商信越化學工業股份有限公司 光學元件的雷射誘導向前轉移方法及其裝置、已轉移了光學元件的受體基板的製造方法以及顯示器的製造方法
WO2023228918A1 (ja) * 2022-05-27 2023-11-30 京セラ株式会社 発光装置および発光装置の製造方法
TWI867551B (zh) * 2023-05-29 2024-12-21 前源科技股份有限公司 可調整間距的巨量轉移電子元件的方法
CN117766639B (zh) * 2024-02-20 2024-05-31 昆山鸿仕达智能科技股份有限公司 光伏电池片激光诱导加工设备
CN118522674A (zh) * 2024-07-22 2024-08-20 迈为技术(珠海)有限公司 基板控制方法、装置、计算机设备、可读存储介质和程序产品

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002062825A (ja) * 2000-08-18 2002-02-28 Sony Corp 画像表示装置及びその製造方法
JP4491948B2 (ja) * 2000-10-06 2010-06-30 ソニー株式会社 素子実装方法および画像表示装置の製造方法
JP2002158237A (ja) * 2000-11-20 2002-05-31 Sony Corp 素子の転写方法及び素子の実装方法
CN100418487C (zh) 2003-07-29 2008-09-17 斯恩蒂斯有限公司 用于将纵支架与骨固定元件固定的装置
CN101517700B (zh) * 2006-09-20 2014-04-16 伊利诺伊大学评议会 用于制造可转移半导体结构、器件和器件构件的松脱策略
KR20130118616A (ko) * 2012-04-20 2013-10-30 우시오덴키 가부시키가이샤 레이저 리프트 오프 장치 및 레이저 리프트 오프 방법
KR102081286B1 (ko) * 2013-04-16 2020-04-16 삼성디스플레이 주식회사 레이저 열전사 장치, 레이저 열전사 방법 및 이를 이용한 유기발광 디스플레이 장치 제조방법
JP6106522B2 (ja) * 2013-05-17 2017-04-05 スタンレー電気株式会社 半導体発光素子アレイ
US9773945B2 (en) * 2015-01-30 2017-09-26 Osram Opto Semiconductors Gmbh Method for producing a semiconductor component and a semiconductor component
JP2018060993A (ja) * 2016-09-29 2018-04-12 東レエンジニアリング株式会社 転写方法、実装方法、転写装置、及び実装装置
JP6918537B2 (ja) 2017-03-24 2021-08-11 東レエンジニアリング株式会社 ピックアップ方法、ピックアップ装置、及び実装装置
JP7094162B2 (ja) 2017-06-28 2022-07-01 信越化学工業株式会社 リフト装置及び使用方法
JP6966281B2 (ja) 2017-09-29 2021-11-10 東レエンジニアリング株式会社 転写基板、及び転写方法
JP7034771B2 (ja) * 2018-03-02 2022-03-14 キオクシア株式会社 露光装置、露光方法、及び半導体装置の製造方法
KR102652723B1 (ko) * 2018-11-20 2024-04-01 삼성전자주식회사 마이크로 led 전사 장치 및 이를 이용한 마이크로 led 전사 방법
JP7145096B2 (ja) 2019-02-12 2022-09-30 信越化学工業株式会社 微小構造体移載装置、スタンプヘッドユニット、微小構造体移載用スタンプ部品及び微小構造体集積部品の移載方法
CN111128843A (zh) * 2019-12-27 2020-05-08 深圳市华星光电半导体显示技术有限公司 Micro LED的转移方法
TW202215730A (zh) * 2020-09-30 2022-04-16 日商信越化學工業股份有限公司 光學元件的雷射誘導向前轉移方法及其裝置、已轉移了光學元件的受體基板的製造方法以及顯示器的製造方法

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TWM668963U (zh) 2025-04-11
TWM661925U (zh) 2024-10-21
TWM656434U (zh) 2024-06-11
EP4224538A1 (en) 2023-08-09
KR20230074723A (ko) 2023-05-31
TWM673226U (zh) 2025-08-01
US20240014200A1 (en) 2024-01-11
WO2022071371A1 (ja) 2022-04-07
JP7818918B2 (ja) 2026-02-24
CN216980602U (zh) 2022-07-15
CN219371054U (zh) 2023-07-18
EP4224538A4 (en) 2025-01-29
JP2022058237A (ja) 2022-04-11
TWM643626U (zh) 2023-07-11
CN116195074A (zh) 2023-05-30

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