KR20230074723A - 광디바이스의 리프트 방법 및 그 장치, 광디바이스가 이설된 리셉터 기판의 제조 방법, 그리고 디스플레이의 제조 방법 - Google Patents

광디바이스의 리프트 방법 및 그 장치, 광디바이스가 이설된 리셉터 기판의 제조 방법, 그리고 디스플레이의 제조 방법 Download PDF

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KR20230074723A
KR20230074723A KR1020237009310A KR20237009310A KR20230074723A KR 20230074723 A KR20230074723 A KR 20230074723A KR 1020237009310 A KR1020237009310 A KR 1020237009310A KR 20237009310 A KR20237009310 A KR 20237009310A KR 20230074723 A KR20230074723 A KR 20230074723A
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substrate
optical device
receptor
donor
lifting
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Korean (ko)
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히로시 야마오카
노부타카 우에모리
사토키 나카다
다케시 사이토
슈사쿠 오자와
신이치 사토
마사미 구라타
마사히코 사토
츠카사 아베
츠요시 노구치
다케토 우사미
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신에쓰 가가꾸 고교 가부시끼가이샤
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    • H01L24/97
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H01L24/75
    • H01L25/0753
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    • H01L33/0093
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0235Method for mounting laser chips
    • H01S5/02375Positioning of the laser chips
    • HELECTRICITY
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    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • HELECTRICITY
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    • HELECTRICITY
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    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
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    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/011Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
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    • H10H20/01Manufacture or treatment
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    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
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    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
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    • H10W72/00Interconnections or connectors in packages
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    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H10P72/53Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment using optical controlling means
    • HELECTRICITY
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    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Laser Beam Processing (AREA)
  • Semiconductor Lasers (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Manufacturing & Machinery (AREA)
KR1020237009310A 2020-09-30 2021-09-29 광디바이스의 리프트 방법 및 그 장치, 광디바이스가 이설된 리셉터 기판의 제조 방법, 그리고 디스플레이의 제조 방법 Ceased KR20230074723A (ko)

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JPJP-P-2020-165877 2020-09-30
JP2020165877 2020-09-30
PCT/JP2021/035794 WO2022071371A1 (ja) 2020-09-30 2021-09-29 光デバイスのリフト方法及びその装置、光デバイスが移設されたレセプター基板の製造方法、並びにディスプレイの製造方法

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KR20230074723A true KR20230074723A (ko) 2023-05-31

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US (1) US20240014200A1 (https=)
EP (1) EP4224538A4 (https=)
JP (1) JP7818918B2 (https=)
KR (1) KR20230074723A (https=)
CN (3) CN216980602U (https=)
TW (6) TW202215730A (https=)
WO (1) WO2022071371A1 (https=)

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TW202215730A (zh) * 2020-09-30 2022-04-16 日商信越化學工業股份有限公司 光學元件的雷射誘導向前轉移方法及其裝置、已轉移了光學元件的受體基板的製造方法以及顯示器的製造方法
WO2023228918A1 (ja) * 2022-05-27 2023-11-30 京セラ株式会社 発光装置および発光装置の製造方法
TWI867551B (zh) * 2023-05-29 2024-12-21 前源科技股份有限公司 可調整間距的巨量轉移電子元件的方法
CN117766639B (zh) * 2024-02-20 2024-05-31 昆山鸿仕达智能科技股份有限公司 光伏电池片激光诱导加工设备
CN118522674A (zh) * 2024-07-22 2024-08-20 迈为技术(珠海)有限公司 基板控制方法、装置、计算机设备、可读存储介质和程序产品

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JP2018163900A (ja) 2017-03-24 2018-10-18 東レエンジニアリング株式会社 ピックアップ方法、ピックアップ装置、及び実装装置
JP2020004478A (ja) 2017-06-28 2020-01-09 丸文株式会社 リフト装置及び使用方法
JP2020129638A (ja) 2019-02-12 2020-08-27 信越化学工業株式会社 微小構造体移載装置、スタンプヘッドユニット、微小構造体移載用スタンプ部品及び微小構造体集積部品の移載方法

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Publication number Priority date Publication date Assignee Title
JP2007506445A (ja) 2003-07-29 2007-03-22 ジンテーズ アクチエンゲゼルシャフト クール 骨固定要素を有する縦通材を固定する装置
JP2018163900A (ja) 2017-03-24 2018-10-18 東レエンジニアリング株式会社 ピックアップ方法、ピックアップ装置、及び実装装置
JP2020004478A (ja) 2017-06-28 2020-01-09 丸文株式会社 リフト装置及び使用方法
JP2020129638A (ja) 2019-02-12 2020-08-27 信越化学工業株式会社 微小構造体移載装置、スタンプヘッドユニット、微小構造体移載用スタンプ部品及び微小構造体集積部品の移載方法

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TWM661925U (zh) 2024-10-21
TWM656434U (zh) 2024-06-11
EP4224538A1 (en) 2023-08-09
TWM673226U (zh) 2025-08-01
US20240014200A1 (en) 2024-01-11
WO2022071371A1 (ja) 2022-04-07
JP7818918B2 (ja) 2026-02-24
CN216980602U (zh) 2022-07-15
CN219371054U (zh) 2023-07-18
EP4224538A4 (en) 2025-01-29
JP2022058237A (ja) 2022-04-11
TWM643626U (zh) 2023-07-11
CN116195074A (zh) 2023-05-30
TW202215730A (zh) 2022-04-16

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