WO2022071371A1 - 光デバイスのリフト方法及びその装置、光デバイスが移設されたレセプター基板の製造方法、並びにディスプレイの製造方法 - Google Patents

光デバイスのリフト方法及びその装置、光デバイスが移設されたレセプター基板の製造方法、並びにディスプレイの製造方法 Download PDF

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WO2022071371A1
WO2022071371A1 PCT/JP2021/035794 JP2021035794W WO2022071371A1 WO 2022071371 A1 WO2022071371 A1 WO 2022071371A1 JP 2021035794 W JP2021035794 W JP 2021035794W WO 2022071371 A1 WO2022071371 A1 WO 2022071371A1
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Prior art keywords
substrate
optical device
receptor
donor
lift
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English (en)
French (fr)
Japanese (ja)
Inventor
裕 山岡
信隆 植森
悟基 仲田
剛 齋藤
周作 小沢
伸一 佐藤
昌実 倉田
正彦 佐藤
司 阿部
毅 野口
健人 宇佐美
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Shin Etsu Chemical Co Ltd
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Shin Etsu Chemical Co Ltd
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Priority to EP21875671.6A priority Critical patent/EP4224538A4/en
Priority to KR1020237009310A priority patent/KR20230074723A/ko
Priority to CN202180065158.5A priority patent/CN116195074A/zh
Priority to US18/027,807 priority patent/US20240014200A1/en
Publication of WO2022071371A1 publication Critical patent/WO2022071371A1/ja
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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02375—Positioning of the laser chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
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    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
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    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0446—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07141—Means for applying energy, e.g. ovens or lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07173—Means for moving chips, wafers or other parts, e.g. conveyor belts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07183—Means for monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H10P72/53—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment using optical controlling means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a micro LED mounting process.
  • optical devices made of nitride semiconductors have come to be used as backlights for liquid crystal displays and displays for signage. Since a large number of optical devices are used at one time in these applications, high-speed transfer technology is required. As a high-speed transfer technology, batch transfer by the stamp method is generally performed, and it has become possible to transfer about 1,000 to tens of thousands at a time.
  • Optical devices are mass-produced on a sapphire substrate by a semiconductor process, and there are millions of LEDs called micro LEDs, which are 100 ⁇ m square or smaller, on a 4-inch substrate.
  • the micro LED which is a minute device of several tens of ⁇ m, is used separately from the sapphire substrate, which is an epi substrate. It is common to attach a support substrate to an optical device arranged on a sapphire substrate and separate it from the sapphire substrate by laser lift-off.
  • the carrier board is a support board or a board on which the optical device is transferred from the support board, and the optical device is picked up from the carrier board at intervals according to the pixel pitch of the display by a special stamp and mounted on the backplane board. Therefore, the pitch of the optical device on the sapphire substrate needs to be 1 / N times the pixel pitch of the display. Where N is a positive integer.
  • Patent Document 1 describes laser lift-off from a sapphire substrate of a nitride semiconductor.
  • Patent Document 2 and Patent Document 3 propose high-speed mounting with different types of stamps.
  • Patent Document 4 describes a lift device that lifts from a donor substrate to a receptor substrate.
  • the pixel pitch of the display varies depending on the display size and the resolution such as 4K and 8K, and preparing the pitch of the optical device on the sapphire substrate corresponding to the pixel pitch hinders mass production of the optical device and increases the cost. turn into. This is a problem common to panel-type devices using laser diodes and photodiode elements.
  • the present invention is a method for solving the above-mentioned problem when the pixel pitch of a display or the like does not satisfy a positive integer multiple of the pitch of an optical device.
  • the first invention according to the present invention is a method of lifting an optical device on a sapphire substrate, which is a donor substrate, to a carrier substrate, which is a receptor substrate (LIFT: Laser Induced Forward Transfer), and is formed on the sapphire substrate.
  • the sapphire substrate and the carrier substrate are opposed to each other, and the position of either or both of the sapphire substrate and the carrier substrate is set so that the distance from the surface of the optical device to the carrier substrate becomes a predetermined value.
  • the relative positions of the sapphire substrate and the carrier substrate in the horizontal plane are aligned, and the sapphire substrate and the carrier substrate are aligned with the speed ratio VR.
  • This is a lift method including a step of operating the sapphire and a step of irradiating and lifting a laser beam in conjunction with the scan operation.
  • the "optical device” includes a laser diode and a photodiode as long as each of the above steps can be used.
  • the arrangement pitch D is composed of an arrangement pitch DX in the X direction and an arrangement pitch DY in the Y direction
  • the arrangement pitch R is an arrangement pitch RX in the X direction.
  • It is composed of the arrangement pitch RY in the Y direction
  • the speed ratio VR is composed of the speed ratio VRX in the X direction calculated from the arrangement pitch DX and RX and the speed ratio VRY in the Y direction calculated from the arrangement pitch DY and RY.
  • the irradiation of the laser beam is a reduced projection using a photomask
  • the photomask has approximately one optical device in the Y direction and an array pitch DX in the X direction.
  • the lift method further includes a step of switching the mask so as to use the first opening when lifting with the speed ratio VRY and the second opening when lifting with the speed ratio VRX.
  • the fourth invention is the lift method in the third invention, wherein the opening of the photomask is a group of openings in which each optical device is irradiated in the shape of a substantially optical device.
  • a fifth invention is a lift device that lifts an optical device on a sapphire substrate, which is a donor substrate, to a carrier substrate, which is a receptor substrate, and has a reference position D of an arrangement of optical devices formed on the sapphire substrate, and a reference position D.
  • a stage and stage in which the sapphire substrate and the carrier substrate are opposed to each other based on R, and the positions of either or both of the sapphire substrate and the carrier substrate are adjusted so that the distance from the surface of the optical device to the carrier substrate becomes a predetermined value.
  • the reduced projection optical system that irradiates a plurality of optical devices arranged in line with the reference position D and the reference position R, the relative positions of the sapphire substrate and the carrier substrate in the horizontal plane are aligned, and the sapphire with the speed ratio VR is used.
  • It is a lift device having a stage and a stage controller for scanning a substrate and a carrier substrate, and a laser device for irradiating laser light in conjunction with the scanning operation.
  • the sixth invention is a method of lifting a microelement on a sapphire substrate which is a donor substrate to a receptor substrate having an adhesive layer, the three-dimensional size of the microelements arranged on the donor substrate, and a reference of the arrangement. Based on the step of acquiring the position D and the arrangement pitch D, the step of acquiring the reference position R and the arrangement pitch R of the arrangement of the microelements to be mounted on the receptor substrate by the lift, and the reference position D and the reference position R. , The donor substrate and the receptor substrate are opposed to each other, the substrate spacing is measured, and the positions of either or both of the donor substrate and the receptor substrate are adjusted so that the distance from the lower surface of the microelement to the receptor substrate becomes a predetermined value.
  • the light is KrF excimer laser light
  • the irradiation energy density is 0.5 to 2 J / cm 2
  • the density of the atmosphere satisfying the substrate spacing is 1 to 2 kg / m 3
  • the adhesive layer has a hardness of 20 to 20. 50 (JIS type A)
  • the thickness is 5 ⁇ m or more
  • the predetermined value is a lift method in each range of 10 to 200 ⁇ m.
  • the optical device will be described as an LED (light emitting diode) of a GaN (gallium nitride) semiconductor.
  • the LED manufacturer forms a large number of LEDs on a sapphire substrate, and in the case of micro LEDs of 100 ⁇ m or less, the carrier substrate transferred as the sapphire substrate or by laser lift-off is used to manufacture a display using LEDs. It supplies to the companies (hereinafter referred to as LED display manufacturers).
  • FIG. 1 is a diagram of an arrangement of micro LEDs (2) formed on a sapphire substrate (1).
  • the LED size is 20 ⁇ 40 ⁇ m (X ⁇ Y)
  • the arrangement pitch (3) in the X direction is 30 ⁇ m
  • the arrangement pitch (4) in the Y direction is 60 ⁇ m.
  • the present sapphire substrate is an example of a substrate on which an optical device to be targeted by the lift method according to the present embodiment is formed.
  • the back surface of the sapphire substrate is polished so that the laser can pass through, and the surface on which the LED is formed is unevenly processed to increase the brightness.
  • Table 1 below shows the relationship between the display type and the pixel pitch.
  • the pixel pitch is a positive integer multiple of the arrangement pitch of the sapphire substrate, so a carrier substrate suitable for stamping can be manufactured simply by performing normal laser lift-off, and high-speed mounting using stamps is possible. It is possible.
  • the pixel pitch of the 100-inch display is 0.577 mm at 4K (3840 ⁇ 2160 pixels) and 0.288 mm at 8K (7680 ⁇ 4320 pixels), and the arrangement pitch is 30 ⁇ m and the arrangement pitch is 60 ⁇ m. Not an integral multiple. Select 72.1 ⁇ m as the target array pitch that becomes an integer. The pixel pitch is 8 times the target arrangement pitch at 4K and 4 times the target arrangement pitch at 8K.
  • the lift device As the lift device, the lift device described in Patent Document 4 is used.
  • the sapphire substrate is adsorbed downward on the surface where the micro LED is formed on the donor stage as the donor substrate of the lift device, and the carrier substrate having the adhesive layer faces the receptor stage as the receptor substrate of the lift device and faces the sapphire substrate. Is adsorbed.
  • the coordinates of two or more alignment marks that have been input in advance are moved to the high-magnification camera position, the alignment marks are recognized by image processing, and the camera center.
  • High-precision alignment is performed by calculating the amount of deviation from and feeding it back to the stage. If the accuracy of the transport system is insufficient, it is necessary to perform alignment using a low-magnification camera or rough adjustment using a positioning sensor.
  • the predetermined value of the gap from the micro LED to the adhesive layer is the position of each substrate measured by the height sensor, the thickness of the sapphire substrate, the thickness of the micro LED, the thickness of the carrier substrate, the thickness of the adhesive layer, etc. Set based on.
  • the predetermined value is preferably 10 to 200 ⁇ m, more preferably 50 to 150 ⁇ m. This is because if the gap is narrower than 10 ⁇ m, there is a risk of contact due to bending of the substrate, and if it is wider than 200 ⁇ m, the seating position accuracy of the micro LED when transferred is lowered.
  • the density of gas between the donor substrate and the receptor substrate is also important in relation to the air resistance during micro LED flight.
  • Table 2 below shows a list of typical gas densities.
  • the flight speed cannot be reduced appropriately, causing element damage such as chipping and cracking. If the gas density is too high, the resistance due to the gas will be large and the seating position accuracy will deteriorate due to slight asymmetry.
  • the gas density is preferably 1 to 2 kg / m 3 .
  • the speed ratio of the stage scan between the sapphire substrate and the carrier substrate is the ratio of the arrangement pitch of the sapphire substrate to the target arrangement pitch of the carrier substrate for the 100-inch display.
  • the stage speed of the sapphire substrate is set to 200 mm / s as a reference
  • the stage speed of the carrier substrate is 2.403333333 times 480.666667 mm / s in the X direction and 1.2016666667 times 240.333333 mm / s in the Y direction. Become.
  • a chrome mask in which chrome is vapor-deposited at 100 to 200 nm on a 5-inch square quartz glass substrate is used, and a pattern having openings corresponding to the arrangement and size of 500 micro LEDs in the X direction of FIG. 1 and the figure are shown.
  • a pattern having openings corresponding to the arrangement and size of 200 microLEDs in the Y direction of 4 is produced.
  • the mask pattern will be described with reference to FIG.
  • the black part in FIG. 2 is a light-shielding chrome surface, and the white part is an opening through which a laser passes. Since it is a 1/5 projection optical system, the mask surface is 5 times the projected surface field size. Therefore, the aperture per LED is 100 ⁇ m ⁇ 200 ⁇ m, the pitch is 150 ⁇ m, and the length of the 500 aperture group is 74.95 mm. If the adhesive layer of the carrier substrate is not damaged by laser irradiation, a rectangular opening such as 75,000 ⁇ m ⁇ 250 ⁇ m may be used.
  • Alignment to match the photomask coordinate system and the stage coordinate system is performed when the mask is replaced. If high-precision processing is required, mask alignment is performed even when switching patterns within the same mask.
  • the mask alignment method differs depending on the device configuration, and there are two methods: one is to observe the alignment mark formed on the mask with a high-magnification camera and perform alignment, and the other is to observe the mask projection image with a profiler installed on the stage and perform alignment. be.
  • Alignment may be performed on the stage, or mask alignment may be performed by having a correction value on the substrate stage side.
  • the 4-inch ⁇ sapphire substrate is used as the donor substrate.
  • the receptor substrate is a 6-inch ⁇ quartz substrate, and an adhesive layer having an adhesive hardness of 30 and a thickness of 20 ⁇ m is provided on the surface thereof. If the adhesive layer is too hard, damage such as cracking of the micro LED will occur, and if it is too soft, it will bounce and will not sit, or it will be buried in the adhesive layer, so the hardness is 20 to 50 (JIS type A). It is desirable that the thickness is 5 ⁇ m or more, which is not easily affected by the type of the receptor substrate and is mainly characterized by the material of the adhesive layer. It is more preferable that this hardness is 25 to 40.
  • the thickness of the adhesive layer is preferably 100 ⁇ m or less, and more preferably 10 to 50 ⁇ m.
  • the lift is performed in the Y direction.
  • the photomask sets a pattern having openings corresponding to the arrangement and size of 500 micro LEDs in the X direction of FIG.
  • the velocities in the constant velocity region of the donor stage and the receptor stage are set to 200 mm / s and 240.333333 mm / s.
  • An irradiation method for a 4-inch ⁇ substrate will be described with reference to FIG.
  • the entire surface is irradiated by performing scan irradiation by projection 7 times with a mask pattern of about 15 mm.
  • the hatched area is the irradiation area, and irradiation is performed only on the mounting position of the micro LED.
  • the irradiation start position (X, Y) of the 4-inch ⁇ substrate, which is the donor substrate, is (0, -10.0)
  • the irradiation start position of the 6-inch ⁇ substrate, which is the receptor substrate is (0,-12.01666667).
  • the acceleration distance is set so that the constant velocity is set at this start position, the irradiation area is all constant velocity, and the micro LED is mounted by triggering the pulse laser with reference to the stage coordinates. Only the coordinates are irradiated.
  • the lift from the sapphire substrate of the GaN-based micro LED requires a high energy density because it is an epi substrate, and is 0.5 to 2 J / cm 2 .
  • FIG. 1 A portion of the resulting array of lifts is shown in FIG.
  • the micro LEDs are arranged in a vertically long elliptical shape in which the arrangement pitch (5) is widened in the Y direction on a 6-inch ⁇ substrate.
  • the 6-inch ⁇ quartz substrate (first carrier substrate (6)) removed from the receptor stage is rotated 90 degrees in the plane of FIG. 4XY and adsorbed as a donor substrate.
  • a blank 6-inch ⁇ quartz substrate is adsorbed on the receptor substrate as the second carrier substrate (8).
  • the photomask is switched to a pattern having openings corresponding to the arrangement and size of 200 microLEDs in the Y direction of FIG.
  • the alignment of the donor substrate, the receptor substrate and the photomask is the same as described above.
  • the velocities in the constant velocity region of the donor stage and the receptor stage are set to 200 mm / s and 480.666667 mm / s.
  • the irradiation method is the same as described above. Perform scan irradiation 9 times to irradiate the entire surface. If the irradiation start position (X, Y) of the donor substrate is (0, -10.0), the irradiation start position of the receptor substrate is (0, -24.03333333). Based on the coordinates of the first lift result in the Y direction, the same scan irradiation as described above can be performed to obtain the lift result in which the arrangement pitch is adjusted in the XY direction as shown in FIG.
  • the second carrier substrate in which RGB is lined up may be manufactured by continuously lifting the micro LEDs of each of RGB. If all three colors of RGB are GaN-based, the first carrier substrate can be manufactured for each of RGB in the above step, and the second carrier substrate can be lifted while shifting the RGB.
  • FIG. 6 shows an example of a second carrier board on which RGB is mounted. If R (red) is GaAs, it is necessary to transfer it to a sapphire substrate or quartz glass substrate in advance with the electrodes facing the surface, but a second carrier substrate in which RGB is lined up in the same procedure. Can be produced. In this case, since the sapphire substrate or the quartz glass substrate is not an epi substrate of a compound semiconductor, the energy density at the time of lifting may be low, and is 0.2 to 1.5 J / cm 2 .
  • the array pitch D is composed of an array pitch DX in the X direction and an array pitch DY in the Y direction
  • the array pitch R is composed of an array pitch RX in the X direction and an array pitch RY in the Y direction.
  • the speed ratio VR is composed of a speed ratio VRX in the X direction calculated from the array pitch DX and RX, and a velocity ratio VRY in the Y direction calculated from the array pitch DY and RY.
  • the irradiation of the laser beam is a reduced projection using a photomask
  • the photomask is an aperture corresponding to approximately one optical device in the Y direction and two or more optical devices with an arrangement pitch DX in the X direction.
  • the first opening which is an opening corresponding to approximately one optical device in the X direction and two or more optical devices with an arrangement pitch RY in the Y direction.
  • the process of switching the mask so that the first opening is used when lifting at the speed ratio VRY and the second opening is used when lifting at the speed ratio VRX.
  • a lift device that lifts an optical device on a sapphire substrate, which is a donor substrate, to a carrier substrate, which is a receptor substrate.
  • a first processing unit that acquires the reference position D and the arrangement pitch D of the arrangement of the optical devices formed on the sapphire substrate, and A second processing unit that acquires the reference position R and the arrangement pitch R of the arrangement of the optical device to be transferred onto the carrier substrate by a lift, and the second processing unit.
  • the sapphire substrate and the carrier substrate are opposed to each other, and the position of either or both of the sapphire substrate and the carrier substrate is set so that the distance from the surface of the optical device to the carrier substrate becomes a predetermined value.
  • a third processing unit that calculates the scan speed ratio VR between the sapphire substrate and the carrier substrate from the array pitch D and the array pitch R, and A reduced projection optical system that irradiates the interface between the sapphire substrate and the optical device with laser light from the back surface side of the sapphire substrate toward multiple optical devices arranged in a row.
  • the stage and stage controller Based on the reference position D and the reference position R, the relative positions of the sapphire substrate and the carrier substrate in the horizontal plane are aligned, and the stage and stage controller that scan the sapphire substrate and the carrier substrate at the speed ratio VR, and the stage controller.
  • a laser device that irradiates laser light in conjunction with the scanning operation (6) A method of lifting a microelement on a sapphire substrate, which is a donor substrate, to a receptor substrate having an adhesive layer.
  • the process of adjusting the position of either or both A process of aligning the relative positions of the donor substrate and the receptor substrate in the horizontal plane, and reducing and projecting the laser beam from the back surface side of the donor substrate onto the interface between the donor substrate and the microelement.
  • the reduced-projected laser light is KrF excimer laser light, and its irradiation energy density is 0.5 to 2 J / cm 2 .
  • the density of the atmosphere that satisfies the substrate spacing is 1 to 2 kg / m 3
  • the adhesive layer has a hardness of 20 to 50 and a thickness of 5 ⁇ m or more.
  • the predetermined value is 10 to 200 ⁇ m.
  • the lift method that is.
  • a lift method for lifting an optical device on a donor substrate to a receptor substrate The donor substrate and the receptor substrate are opposed to each other, and a gap is provided between the surface of the optical device and the receptor substrate.
  • the lift method according to (7), wherein the conversion interval is the Y direction (long axis direction of the optical device).
  • the optical device is a laser diode or a photodiode.
  • the optical device is an LED or a micro LED.
  • (23) A method of lifting an optical device on a donor substrate to a receptor substrate. The process of acquiring the array pitch D of the array of optical devices formed on the donor substrate, and A step of facing the donor substrate and the receptor substrate and adjusting the positions of either or both of the donor substrate and the receptor substrate so that the distance from the surface of the optical device to the receptor substrate becomes a predetermined value. A step of calculating the scan rate ratio VR between the donor substrate and the receptor substrate from the array pitch D and the array pitch R of the optical device to be transferred onto the receptor substrate by lift.
  • (24) A lift device that lifts an optical device on a donor substrate to a receptor substrate.
  • a reduced projection optical system that irradiates the interface between the donor substrate and the optical device with laser light from the back surface side of the donor substrate toward a plurality of optical devices arranged in a row.
  • a mechanism for scanning the donor substrate and the receptor substrate with the speed ratio VR, A laser device that irradiates laser light in conjunction with the scanning operation, (25) A method of lifting a microelement on a donor substrate to a receptor substrate having an adhesive layer.
  • the reduced-projected laser light is KrF excimer laser light, and its irradiation energy density is 0.5 to 2 J / cm 2 .
  • the density of the atmosphere that satisfies the substrate spacing is 1 to 2 kg / m 3
  • the adhesive layer has a hardness of 20 to 50 and a thickness of 5 ⁇ m or more.
  • the predetermined value is 10 to 200 ⁇ m.
  • the lift method that is.
  • the present invention can be expressed from another viewpoint as follows (U1) to (U15).
  • (U1) A system that lifts an optical device on a sapphire substrate, which is a donor substrate, to a carrier substrate, which is a receptor substrate.
  • the mechanism to adjust A mechanism for calculating the scan speed ratio VR between the sapphire substrate and the carrier substrate from the array pitch D and the array pitch R A mechanism that irradiates the interface between the sapphire substrate and the optical device with laser light from the back surface side of the sapphire substrate toward multiple optical devices arranged in a row. Based on the reference position D and the reference position R, the relative positions of the sapphire substrate and the carrier substrate in the horizontal plane are aligned, and the sapphire substrate and the carrier substrate are scanned at the speed ratio VR.
  • a mechanism that irradiates and lifts laser light in conjunction with scanning operation, Lift system including.
  • the array pitch D is composed of an array pitch DX in the X direction and an array pitch DY in the Y direction
  • the array pitch R is composed of an array pitch RX in the X direction and an array pitch RY in the Y direction.
  • the speed ratio VR is composed of a speed ratio VRX in the X direction calculated from the array pitch DX and RX, and a velocity ratio VRY in the Y direction calculated from the array pitch DY and RY.
  • the irradiation of the laser beam is a reduced projection using a photomask
  • the photomask is an aperture corresponding to approximately one optical device in the Y direction and two or more optical devices with an arrangement pitch DX in the X direction.
  • the first opening which is an opening corresponding to approximately one optical device in the X direction and two or more optical devices with an arrangement pitch RY in the Y direction.
  • the lift system according to (U3), wherein the opening of the photomask is a group of openings in which each optical device is irradiated in the shape of a substantially optical device. .. (U5) A lift device in which a donor substrate is installed in a lift device that lifts an optical device on a sapphire substrate, which is a donor substrate, to a carrier substrate, which is a receptor substrate.
  • a first processing unit that acquires the reference position D and the arrangement pitch D of the arrangement of the optical devices formed on the sapphire substrate, and
  • a second processing unit that acquires the reference position R and the arrangement pitch R of the arrangement of the optical device to be transferred onto the carrier substrate by a lift, and the second processing unit.
  • the sapphire substrate and the carrier substrate are opposed to each other, and the position of either or both of the sapphire substrate and the carrier substrate is set so that the distance from the surface of the optical device to the carrier substrate becomes a predetermined value.
  • a third processing unit that calculates the scan speed ratio VR between the sapphire substrate and the carrier substrate from the array pitch D and the array pitch R, and A reduced projection optical system that irradiates the interface between the sapphire substrate and the optical device with laser light from the back surface side of the sapphire substrate toward multiple optical devices arranged in a row.
  • a laser device that irradiates laser light in conjunction with the scanning operation (U6)
  • the reduced-projected laser light is KrF excimer laser light, and its irradiation energy density is 0.5 to 2 J / cm 2 .
  • the density of the atmosphere that satisfies the substrate spacing is 1 to 2 kg / m 3
  • the adhesive layer has a hardness of 20 to 50 and a thickness of 5 ⁇ m or more.
  • the predetermined value is 10 to 200 ⁇ m.
  • the lift system is. (U7) A lift system that lifts an optical device on a donor substrate to a receptor substrate. The donor substrate and the receptor substrate are opposed to each other, and a gap is provided between the surface of the optical device and the receptor substrate.
  • a lift system having a mechanism for lifting adjacent optical devices on a donor substrate arranged at predetermined intervals to a carrier substrate while converting the adjacent optical devices to intervals different from the predetermined intervals.
  • (U8) The lift system according to (U7), wherein the conversion interval is the X direction (the minor axis direction of the optical device).
  • (U9) The lift system according to (U7), wherein the conversion interval is the Y direction (long axis direction of the optical device).
  • (U10) The lift system according to any one of (U7) to (U9), wherein the gap is 10 to 200 ⁇ m.
  • (U11) The lift system according to any one of (U7) to (U10), which lifts the donor substrate or the receptor substrate while scanning.
  • (U12) The lift system according to any one of (U7) to (U11), wherein the optical device is a laser diode or a photodiode.
  • the lift system according to any one of (U7) to (U11), wherein the optical device is an LED or a micro LED.
  • U14 A receptor substrate manufacturing system in which an optical device that lifts an optical device on a donor substrate is transferred to a receptor substrate. The donor substrate and the receptor substrate are opposed to each other, and a gap is provided between the surface of the optical device and the receptor substrate.
  • a manufacturing system for a receptor substrate to which an optical device having a mechanism for lifting an adjacent optical device on a donor substrate arranged at a predetermined interval to a carrier substrate while converting the adjacent optical device to an interval different from the predetermined interval is transferred.
  • (U15) The system for manufacturing a receptor substrate to which the optical device is transferred according to (U14), wherein the conversion interval is the X direction (minor axis direction of the optical device).
  • (U16) The system for manufacturing a receptor substrate to which an optical device is transferred according to (U14), wherein the conversion interval is the Y direction (long axis direction of the optical device).
  • (U17) The system for manufacturing a receptor substrate to which the optical device according to any one of (U14) to (U16), wherein the gap is 10 to 200 ⁇ m, is transferred.
  • (U18) The receptor substrate manufacturing system to which the optical device according to any one of (U14) to (U17) is transferred, in which the donor substrate or the receptor substrate is lifted while being scanned.
  • the optical device is a laser diode or a photodiode.
  • the optical device is an LED or a micro LED.
  • a display having a mechanism for mounting an optical device on a receptor substrate obtained by the receptor substrate manufacturing system to which the optical device according to any one of (U14) to (U19) is transferred is mounted on another substrate. Manufacturing system.
  • (U23) A system that lifts an optical device on a donor substrate to a receptor substrate.
  • U24 A lift device in which a donor substrate is installed in a lift device that lifts an optical device on a donor substrate to a receptor substrate.
  • a mechanism for scanning the donor substrate and the receptor substrate with the speed ratio VR, A laser device that irradiates laser light in conjunction with the scanning operation, (U25) A system that lifts microelements on a donor substrate onto a receptor substrate having an adhesive layer.
  • the density of the atmosphere that satisfies the substrate spacing is 1 to 2 kg / m 3
  • the adhesive layer has a hardness of 20 to 50 and a thickness of 5 ⁇ m or more.
  • the predetermined value is 10 to 200 ⁇ m.
  • the lift system is.
  • different mechanisms may have different functions, or one mechanism may have a plurality of functions.
  • It can be used as part of the manufacturing process of micro LED displays. It can also be used to increase the degree of freedom in arranging GaN-based laser diodes in the manufacturing process of VCSELs (vertical cavity surface emitting lasers), display projectors, and laser projectors. Further, it can be used to increase the degree of freedom in arranging the GaN-based photodiode in the manufacturing process of the flat panel sensor.
  • VCSELs vertical cavity surface emitting lasers
  • display projectors display projectors
  • laser projectors laser projectors
  • it can be used to increase the degree of freedom in arranging the GaN-based photodiode in the manufacturing process of the flat panel sensor.

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  • Physics & Mathematics (AREA)
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  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Laser Beam Processing (AREA)
  • Semiconductor Lasers (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Manufacturing & Machinery (AREA)
PCT/JP2021/035794 2020-09-30 2021-09-29 光デバイスのリフト方法及びその装置、光デバイスが移設されたレセプター基板の製造方法、並びにディスプレイの製造方法 Ceased WO2022071371A1 (ja)

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EP21875671.6A EP4224538A4 (en) 2020-09-30 2021-09-29 LIFTING METHOD FOR OPTICAL DEVICE, LIFTING DEVICE, MANUFACTURING METHOD FOR RECEPTOR SUBSTRATE WITH THE OPTICAL DEVICE AND DISPLAY MANUFACTURING METHOD
KR1020237009310A KR20230074723A (ko) 2020-09-30 2021-09-29 광디바이스의 리프트 방법 및 그 장치, 광디바이스가 이설된 리셉터 기판의 제조 방법, 그리고 디스플레이의 제조 방법
CN202180065158.5A CN116195074A (zh) 2020-09-30 2021-09-29 光器件的激光诱导向前转移方法及其装置、移设有光器件的受体基板的制造方法、以及显示器的制造方法
US18/027,807 US20240014200A1 (en) 2020-09-30 2021-09-29 Lift Method of Optical Devices, Lift Apparatus for Optical Devices, Manufacturing Method for Receptor Substrate Having Transferred Optical Devices, and Manufacturing Method for Display

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JP2020-165877 2020-09-30

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023228918A1 (ja) * 2022-05-27 2023-11-30 京セラ株式会社 発光装置および発光装置の製造方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202215730A (zh) * 2020-09-30 2022-04-16 日商信越化學工業股份有限公司 光學元件的雷射誘導向前轉移方法及其裝置、已轉移了光學元件的受體基板的製造方法以及顯示器的製造方法
TWI867551B (zh) * 2023-05-29 2024-12-21 前源科技股份有限公司 可調整間距的巨量轉移電子元件的方法
CN117766639B (zh) * 2024-02-20 2024-05-31 昆山鸿仕达智能科技股份有限公司 光伏电池片激光诱导加工设备
CN118522674A (zh) * 2024-07-22 2024-08-20 迈为技术(珠海)有限公司 基板控制方法、装置、计算机设备、可读存储介质和程序产品

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002062825A (ja) * 2000-08-18 2002-02-28 Sony Corp 画像表示装置及びその製造方法
JP2002118124A (ja) * 2000-10-06 2002-04-19 Sony Corp 素子実装方法
JP2002158237A (ja) * 2000-11-20 2002-05-31 Sony Corp 素子の転写方法及び素子の実装方法
JP2007506445A (ja) 2003-07-29 2007-03-22 ジンテーズ　アクチエンゲゼルシャフト　クール 骨固定要素を有する縦通材を固定する装置
JP2013247372A (ja) * 2006-09-20 2013-12-09 Board Of Trustees Of The Univ Of Illinois 転写可能な半導体構造、デバイス、及びデバイスコンポーネントを作成するための剥離方法
JP2014225588A (ja) * 2013-05-17 2014-12-04 スタンレー電気株式会社 半導体発光素子アレイ
JP2018506850A (ja) * 2015-01-30 2018-03-08 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 半導体部品を製造するための方法および半導体部品
JP2018060993A (ja) * 2016-09-29 2018-04-12 東レエンジニアリング株式会社 転写方法、実装方法、転写装置、及び実装装置
JP2018163900A (ja) 2017-03-24 2018-10-18 東レエンジニアリング株式会社 ピックアップ方法、ピックアップ装置、及び実装装置
JP2019067892A (ja) * 2017-09-29 2019-04-25 東レエンジニアリング株式会社 転写基板、及び転写方法
JP2020004478A (ja) 2017-06-28 2020-01-09 丸文株式会社 リフト装置及び使用方法
JP2020129638A (ja) 2019-02-12 2020-08-27 信越化学工業株式会社 微小構造体移載装置、スタンプヘッドユニット、微小構造体移載用スタンプ部品及び微小構造体集積部品の移載方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130118616A (ko) * 2012-04-20 2013-10-30 우시오덴키 가부시키가이샤 레이저 리프트 오프 장치 및 레이저 리프트 오프 방법
KR102081286B1 (ko) * 2013-04-16 2020-04-16 삼성디스플레이 주식회사 레이저 열전사 장치, 레이저 열전사 방법 및 이를 이용한 유기발광 디스플레이 장치 제조방법
JP7034771B2 (ja) * 2018-03-02 2022-03-14 キオクシア株式会社 露光装置、露光方法、及び半導体装置の製造方法
KR102652723B1 (ko) * 2018-11-20 2024-04-01 삼성전자주식회사 마이크로 led 전사 장치 및 이를 이용한 마이크로 led 전사 방법
CN111128843A (zh) * 2019-12-27 2020-05-08 深圳市华星光电半导体显示技术有限公司 Micro LED的转移方法
TW202215730A (zh) * 2020-09-30 2022-04-16 日商信越化學工業股份有限公司 光學元件的雷射誘導向前轉移方法及其裝置、已轉移了光學元件的受體基板的製造方法以及顯示器的製造方法

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002062825A (ja) * 2000-08-18 2002-02-28 Sony Corp 画像表示装置及びその製造方法
JP2002118124A (ja) * 2000-10-06 2002-04-19 Sony Corp 素子実装方法
JP2002158237A (ja) * 2000-11-20 2002-05-31 Sony Corp 素子の転写方法及び素子の実装方法
JP2007506445A (ja) 2003-07-29 2007-03-22 ジンテーズ　アクチエンゲゼルシャフト　クール 骨固定要素を有する縦通材を固定する装置
JP2013247372A (ja) * 2006-09-20 2013-12-09 Board Of Trustees Of The Univ Of Illinois 転写可能な半導体構造、デバイス、及びデバイスコンポーネントを作成するための剥離方法
JP2014225588A (ja) * 2013-05-17 2014-12-04 スタンレー電気株式会社 半導体発光素子アレイ
JP2018506850A (ja) * 2015-01-30 2018-03-08 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ 半導体部品を製造するための方法および半導体部品
JP2018060993A (ja) * 2016-09-29 2018-04-12 東レエンジニアリング株式会社 転写方法、実装方法、転写装置、及び実装装置
JP2018163900A (ja) 2017-03-24 2018-10-18 東レエンジニアリング株式会社 ピックアップ方法、ピックアップ装置、及び実装装置
JP2020004478A (ja) 2017-06-28 2020-01-09 丸文株式会社 リフト装置及び使用方法
JP2019067892A (ja) * 2017-09-29 2019-04-25 東レエンジニアリング株式会社 転写基板、及び転写方法
JP2020129638A (ja) 2019-02-12 2020-08-27 信越化学工業株式会社 微小構造体移載装置、スタンプヘッドユニット、微小構造体移載用スタンプ部品及び微小構造体集積部品の移載方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP4224538A4

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023228918A1 (ja) * 2022-05-27 2023-11-30 京セラ株式会社 発光装置および発光装置の製造方法

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CN219371054U (zh) 2023-07-18
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