TWI815447B - 顯示裝置之製造方法及保持基板 - Google Patents
顯示裝置之製造方法及保持基板 Download PDFInfo
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- TWI815447B TWI815447B TW111118017A TW111118017A TWI815447B TW I815447 B TWI815447 B TW I815447B TW 111118017 A TW111118017 A TW 111118017A TW 111118017 A TW111118017 A TW 111118017A TW I815447 B TWI815447 B TW I815447B
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Abstract
本發明之課題在於提供一種可增加自每一片保持基板取得之發光元件之數量的顯示裝置之製造方法及保持基板。
本發明之顯示裝置之製造方法包含下述步驟:基於保持基板之複數個第1對準標記之位置,取得保持基板之面上之第1基準位置;及將保持基板與被移送基板以第1基準位置、與被移送基板之面上之第2基準位置之位置對準之方式定位。保持基板自一方向觀察經區劃為第1區劃與複數個第2區劃。第2區劃自一方向觀察以特定間隔配置。第1區劃自一方向觀察,備置於複數個第2區劃彼此之間隙之一部分。第1區劃之光透過率高於第2區劃,形成供光透過之第1對準標記。
Description
本揭示係關於一種顯示裝置之製造方法及保持基板。
業界存在將紅色、綠色及藍色等之發光元件組合而設為像素之顯示裝置。構成像素之發光元件自保持發光元件之保持基板被移送至顯示裝置之被移送基板。於顯示裝置之製造製程中,有時使用以下技術,即:將保持發光元件之保持基板直接按壓於被移送基板,批次進行複數個發光元件之移送。
於將保持發光元件之保持基板直接按壓於被移送基板並進行複數個發光元件之移送時,進行保持基板之位置與被移送基板之位置之定位。保持基板與被移送基板之定位係藉由將保持基板所具備之對準標記與被移送基板所具備之對準標記之位置對準而進行。
於專利文獻1中曾揭示於分散有導電性粒子之各向異性導電膜,使導電性粒子凝集而形成用於將各向異性導電膜與電路基板定位之對準標記。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本特開2021-4988號公報
[發明所欲解決之問題]
保持基板所具備之對準標記於保持基板之應保持發光元件之區域之一部分形成不保持發光元件之區域,且備置於該形成之區域。因此,自每一片保持基板取得之發光元件之數量減少具備對準標記之區域量。進而,於顯示裝置之製造步序中,在批次將發光元件自保持基板移送至被移送基板後,發生將發光元件移送至被移送基板之與保持基板之具備對準標記之區域對應之區域之步序。
本揭示係鑒於上述之問題而完成者,其目的在於提供一種可增加自每一片保持基板取得之發光元件之數量之顯示裝置之製造方法及保持基板。
[解決問題之技術手段]
用於達成上述目的之本揭示之顯示裝置之製造方法包含以下步驟:基於保持基板之複數個第1對準標記之位置,取得前述保持基板之面之第1基準位置;及使前述保持基板與被移送基板以前述第1基準位置與被移送基板之面之第2基準位置之位置對準之方式定位;且前述保持基板自一方向觀察區劃為複數個第1區劃與複數個第2區劃;前述第2區劃自前述一方向觀察以特定間隔配置;前述第1區劃自前述一方向觀察備置於複數個前述第2區劃彼此之間隙之一部分,前述第1區劃之光之透過率高於前述第2區劃,自前述一方向觀察形成供光透過之前述第1對準標記。
用於達成上述目的之本揭示之保持基板自一方向觀察區劃為複數個第1區劃與複數個第2區劃,前述第2區劃自前述一方向觀察以特定間隔配置,前述第1區劃自前述一方向觀察備置於複數個前述第2區劃彼此之間隙之一部分,前述第1區劃之光之透過率高於前述第2區劃,自一方向觀察形成供光透過之對準標記。
針對用於實施本揭示之形態(實施形態),一面參照圖式,一面詳細地說明。並非藉由以下之實施形態所記載之內容來限定本揭示。又,於以下所記載之構成要素中,亦包含本領域技術人員可易於想到之構成要素、及實質上相同之構成要素。進而,以下所記載之構成要素可適宜地組合。此外,終極而言僅為一例,對於本領域技術人員針對保持揭示之主旨之適宜變更可容易地想到者,當然包含於本揭示之範圍內。又,為使說明更加明確,圖式與實際態樣相較存在將各部分之寬度、厚度、形狀等示意性地顯示之情形,但其終極而言僅為一例,並非係限定本揭示之解釋者。又,於本說明書及各圖中,存在針對與已出現之圖中所描述之要素同樣的要素賦予同一符號,且適宜省略其詳細說明之情形。
針對用於實施本揭示之形態,以下,參照圖1至4進行說明。圖1係實施形態之保持基板之概念仰視圖。圖2係圖1之主要部分之細節圖。圖3A係圖2之A-A剖視箭頭方向之剖視圖。圖3B係顯示圖3A之變化例之剖視圖。圖4係被移送基板之概念俯視圖。
又,於以下之說明中,將保持基板100之第1區域110之面設為與X軸及Y軸平行之XY平面,又,將與XY平面正交之軸設為Z軸。又,有時將圖1之與X軸平行之方向中自右向左之方向稱為X+方向,又,有時將與X+方向相反之方向稱為X-方向。又,有時將圖1之與Y軸平行之方向中自下向上之方向稱為Y+方向,又,有時將與Y+方向相反之方向稱為Y-方向。又,有時將圖1之與Z軸平行之方向中往向紙面之方向稱為Z+方向,又,有時將與Z+方向相反之方向稱為Z-方向。
<第1實施形態>
將圖1所示之由保持基板100保持之複數個發光元件D移送至被移送基板200(參照圖4)。
<發光元件>
發光元件D發出特定色之光。發光元件D為自第1面101之正交方向觀察具有3 μm以上、300 μm以下左右之大小之無機發光二極體(LED:Light Emitting Diode,發光二極體)晶片,被稱為微型LED(micro LED)。於各像素具備微型LED之顯示裝置10亦被稱為微型LED顯示裝置。此外,微型LED之微型並非係限定無機發光二極體之大小者。又,發光元件D可為小型LED。
發光元件D具有依序積層有未圖示之第1電極連接層、發光層及第2電極連接層之積層構造。發光元件D於生長基板上使半導體之晶體生長而形成上述之積層構造。於發光層為氮化鎵系材料(GaN)之情形下,第1電極連接層為例如N型GaN,第2電極連接層為P型GaN。藉由對發光元件D之第1電極連接層與第2電極連接層通電,而發光層發出特定色之光。發光元件D發出之光可為紅色、藍色、黃綠色或綠色等任一色。具體而言,自發光元件D發出之各色之光之中心波長為紅色之情形之約610 nm、藍色之情形之470 nm、綠色之情形之505 nm,或黃綠色之情形之570 nm。
<保持基板>
保持基板100係板形狀之基板。保持基板100如圖1所示具有:位於保持基板100之中央之第1區域110、保持基板100之外緣即緣部102A、及緣部102A之隔著第1區域110為相反側之保持基板100之外緣即緣部102B。保持基板100係由具有透光性之材料構成。保持基板100係用於使半導體之薄膜之晶體生長之所謂之生長基板。保持基板100係例如藍寶石基板。保持基板100係於第2面120圖案狀形成有複數個凸部122之所謂之圖案化藍寶石基板(Patterned Sapphire Substrate)。
此外,保持基板100不限於生長基板,可係為了進行移送而暫時保持發光元件D之移送基板。該情形下,保持基板100係由玻璃系材料或樹脂系材料等板材製作,將發光元件D例如經由接著片材而保持於第2面120。以下,保持基板100作為生長基板而說明。
<第1區域>
第1區域110如圖1及圖2所示般具備複數個第1區劃112及複數個第2區劃114。於本實施形態中,第1區域110之中心116與自Z+方向觀察到之保持基板100之中心之位置一致。
<第1區劃>
第1區劃112如圖2、圖3A及圖3B所示般具有與XY平面平行且平坦之第1面101。第1區劃112如圖2所示般自Z+方向觀察備置於複數個第2區劃114彼此之間隙之一部分。第1區劃112備置於由複數個第2區劃114彼此之間隙形成之格子線之一部分。第1區劃112如圖2所示般自Z+方向觀察具有十字形狀。備置於複數個第2區劃114彼此之間隙之第1區劃112之沿著第1面101之X+方向之寬度w如圖3A及圖3B所示般小於複數個第2區劃114彼此之間隔d。自Z+方向觀察到之第1區劃112之形狀可為例如將2條直線組合而成之形狀。
第1區劃112之第1面101如圖3A及圖3B所示般起伏之高低差小於第2區劃114之第2面120。第1區劃112之第1面101為例如平滑之面。於圖3A中,第1面101於較第2面120在Z方向為高之位置為平滑之面。於圖3B中,第1面101較第2面120在Z方向為低且為平滑之面。由於第1面101之起伏之高低差較第2面120為小,故第1區劃112之光之透過率高於第2區劃114。第1區劃112在第1面101、與第1面101的相反面之間供特定光量之光透過。
第1區劃112如圖1所示般於第1區域110具備複數個。複數個第1區劃112以第1區域110之中心116為中心地分別備置於點對稱之位置。例如,於複數個第1區劃112具有第1區劃112A與第1區劃112B之情形下,第1區劃112A自第1區域110之中心116觀察備置於位於X+方向且Y+方向之緣部102A側,第1區劃112B備置於隔著第1區域110與緣部102A為相反之自中心116觀察位於X-方向且Y-方向之緣部102B側。第1區劃112如圖2所示般由第2區劃114包圍。又,於保持基板100在第2區劃114之第2面120具備發光元件D之情形下,第1區劃112跨及由複數個發光元件D彼此形成之複數個間隙而備置。
<第2區劃>
第2區劃114如圖2、圖3A及圖3B所示般係自Z+方向觀察具有第2面120之區劃。第2區劃114自Z+方向觀察以特定間隔配置。第2區劃114如圖1所示般自Z+方向觀察格子狀配置。第2面120如圖3A及圖3B所示般凸部122之起伏之高低差大於第1面101。第2面120藉由凸部122之起伏,將向第2面120入射之光反射,故而光之透過率低於第1面101。
第2面120之凸部122係由作為微細之圖案週期性地形成之反射光之構造體形成。反射光之構造體例如具有向第2面120之正交方向突出之圓錐形、半球形、金字塔形或柱形等形狀。
第2面120之凸部122可利用例如與形成PPS(Patterned Sapphire Substrate;圖案化藍寶石基板)相同之製程形成。第2面120之凸部122例如可藉由蝕刻處理技術、或所謂之奈米壓印技術形成。
於圖3A中,以下,針對第2面120之凸部122藉由乾式蝕刻處理形成之情形,進行說明。乾式蝕刻處理前之保持基板之第1區域110之面可為平滑之面,又,可為預先圖案狀形成有凹凸之面。於使用乾式蝕刻處理前之第1區域110之面具有平滑之面之保持基板100之情形下,以光阻劑被覆第1區劃112,且不以光阻劑被覆第2區劃114。該情形下,第1區劃112不被予以乾式蝕刻處理,維持平滑之面不變,第2區劃114之第2面120被予以乾式蝕刻處理,形成凸部122之圖案。
又,於圖3B中,於使用在第1區域110之面形成有凸部122之圖案之保持基板之情形下,不以光阻劑被覆第1區劃112,且以光阻劑被覆第2區劃114。該情形下,第1區劃112被予以乾式蝕刻處理,第1面101為平滑之面。第2區劃114之第2面120不被予以乾式蝕刻處理,維持凸部122之圖案不變。如此,藉由乾式蝕刻處理,形成第2面120之凸部122。又,乾式蝕刻處理所使用之遮罩,例如可於保持基板100之第1區域110之全面塗佈光阻劑形成光阻劑膜,藉由微影術使光阻劑膜之相當於第1區劃112或第2區劃114之任一者之區域感光而形成。
<被移送基板>
被移送基板200如圖4所示般為板形狀之基板。被移送基板200例如為顯示裝置10之陣列基板。被移送基板200於被移送區域210,被移送發光元件D而成為顯示區域。被移送基板200如圖4所示般,具有被移送區域210、周邊區域214及複數個第2對準標記203。被移送基板200例如為於顯示區域形成有TFT(Thin Film Transistor,薄膜電晶體)電路、信號線、掃描線之陣列基板。
被移送區域210藉由具備複數個像素而形成顯示區域。被移送區域210於特定位置被移送發光元件D。被移送區域210自Z+方向觀察,具有與保持基板100之第1區域110同等之大小。被移送區域210亦可具備較發光元件D先移送之其他發光元件。周邊區域214備置於被移送區域210之外周。
複數個第2對準標記203如圖4所示般,備置於自Z+方向觀察被移送基板200時會與被移送區域210之面一起觀察到之面。複數個第2對準標記203備置於以被移送區域210之中心212為中心之點對稱之位置。複數個第2對準標記203例如備置於周邊區域214。複數個第2對準標記203不限於周邊區域214,亦可備置於被移送區域210。該情形下,複數個第2對準標記203備置於與保持基板100之複數個第1對準標記103對應之位置。
如圖4所示,第2對準標記203A備置於周邊區域214之、例如自被移送區域210之中心212觀察之X+方向且Y+方向,又,第2對準標記203B備置於周邊區域214之、將第2對準標記203B與被移送區域210之中心212相連之線上自被移送區域210之中心212觀察之X-方向且Y-方向。亦即,第2對準標記203A與第2對準標記203B備置於被移送基板200之周邊區域214之、以被移送區域210之中心212為中心隔著被移送區域210成為對角之位置。此外,第2對準標記203A與第2對準標記203B不限於隔著被移送區域210成為對角之位置,可備置為將第2對準標記203A與第2對準標記203B相連之線通過被移送區域210之中心212,且與被移送區域210之外緣之任一邊平行。
第2對準標記203形成於供形成電路之金屬層。第2對準標記203備置於被移送基板200之積層構造中供形成電路之金屬層。被移送基板200藉由第2對準標記203之位置,可高精度地規定用於與發光元件D連接之電極之位置。此外,第2對準標記203亦可備置於被移送基板200所具備之複數個金屬層中之任一金屬層。第2對準標記203例如亦可形成於供形成所謂之閘極電極層或源極電極層之金屬層。
此外,當發光元件D被移送至被移送基板200時,則成為顯示裝置10。顯示裝置10控制複數個像素而顯示圖像。像素包含發出複數個不同色之光之發光元件D。顯示裝置10於被移送基板200上具備複數個像素。
像素矩陣狀配置。像素例如分別具備:發出藍色之光之發光元件、發出紅色之光之發光元件、及發出綠色之光之發光元件。於以下之說明中,發光元件D發出之光之色不特定。
<第1實施形態之顯示裝置之製造方法>
針對第1實施形態之顯示裝置之製造方法,以下,參照圖5A至圖8而說明。圖5A係顯示顯示裝置之製造方法中之取得第1基準位置之步驟之概念圖。圖5B係顯示顯示裝置之製造方法中之取得第2基準位置之步驟之概念圖。圖5C係顯示顯示裝置之製造方法中之定位之步驟之概念圖。圖5D係顯示顯示裝置之製造方法中之將保持基板按壓於被移送基板之步驟之概念圖。圖6係顯示裝置之製造方法中之保持基板之概念俯視圖。圖7係顯示裝置之製造方法中之被移送基板之概念俯視圖。圖8係顯示顯示裝置之製造方法中之將保持基板與被移送基板定位之狀態之概念俯視圖。顯示裝置之製造方法包含以下步驟:取得保持基板之第1基準位置;取得被移送基板之第2基準位置;及將保持基板與被移送基板定位。
顯示裝置之製造方法係使用未圖示之對準裝置來進行。對準裝置具備相機C1、相機C2、燈L、處置器H、載台T以及未圖示之圖像處理部及控制部。相機C1拍攝保持基板100之與具備第1區域110之面為相反之面之全域。相機C2拍攝被移送基板200之具備被移送區域210之面之全域。燈L對於保持基板100之第1區域110照射特定光量之光。燈L可具有調光功能。處置器H如圖5A所示般可將保持基板100保持於空中,又,可於將保持基板100保持於空中之狀態下於Z方向移動。載台T可如圖5B所示般保持被移送基板200,又,可於保持被移送基板200之狀態下於X方向及Y方向移動。此處,載台T將被移送基板200保持為被移送區域210為Z+方向之朝向。載台T可於X軸方向及Y軸方向移動。載台T於可移動之範圍包含處置器H。載台T可進一步繞Z軸旋轉。圖像處理部對於相機C1拍攝到之圖像資料、及相機C2拍攝到之圖像資料,進行特定圖像處理。控制部控制對準裝置之各部。
保持基板100如圖5A所示般以第1區域110之面朝向Z-方向之方式由處置器H保持。此處,由處置器H保持之保持基板100於保持發光元件D之面側具備燈L,於保持基板100之與具備第1區域110之面為相反之面側具備相機C1。
被移送基板200如圖5B所示般於對準裝置之載台T被保持為被移送區域210之面之正交方向為Z+方向之朝向。被保持於載台T之被移送基板200於Z+方向側具備相機C2。相機C2拍攝被保持於載台T之被移送基板200。由相機C2拍攝到之圖像資料被送至圖像處理部。
<取得第1基準位置之步驟>
於取得第1基準位置之步驟中,如圖5A所示,對準裝置自燈L向保持基板100之第1區域110照射特定光量之光,以相機C1拍攝自燈L照射光之狀態之保持基板100。由相機C1拍攝到之圖像資料被送至圖像處理部。圖像處理部對自相機C1給送之圖像資料進行圖像處理,並辨識複數個第1對準標記103。又,圖像處理部如圖6所示般自圖像資料,基於辨識出之複數個第1對準標記103,取得第1基準位置130。
具體而言,對準裝置自保持基板100之第1區域110之面側向保持基板100藉由燈L進行照射。自燈L照射之光中之照射至保持基板100之第1區劃112之光自第1面101向第1面101之相反之面透過。又,自燈L照射之光中之照射至保持基板100之第2區劃114之光由第2面120之凸部122之起伏反射而衰減。藉此,自燈L向保持基板100之第2區劃114照射且與第1區域110之面相反地透過之光之光量少於向保持基板100之第1區劃112照射且與第1區域110之面相反地透過之光。亦即,自燈L照射至保持基板100之第2區劃114之光之與第1區域110之面相反地透過之光之光量被截斷為特定光量以下。此處,「特定光量」為預先規定之光量。自第1面101向第1面101之相反之面透過之光係由備置於第1面101之相反之面側之相機C1拍攝。
圖像處理部基於圖像資料,將相當於第1區劃112A與第1區劃112B之部分分別辨識為第1對準標記103A、及第1對準標記103B。圖像處理部基於由相機C1拍攝到之圖像資料,分割為複數個圖像區域,且針對各個圖像區域取得亮度。圖像處理部將取得之複數個圖像區域中之成為特定亮度以上之複數個圖像區域分別辨識為複數個第1對準標記103,並取得第1基準位置130。此處,特定亮度為預先規定之亮度。圖像資料上之相當於第1區劃112之圖像區域供特定光量之光透過,成為特定亮度以上,圖像資料之相當於第2區劃114之圖像區域成為較相當於第1區劃112之圖像區域為低之亮度。圖像處理部將圖像資料之為特定亮度以上之圖像區域結合,基於結合之圖像區域之形狀,辨識第1對準標記103,並取得第1對準標記103之中心104之位置之座標。更具體而言,圖像處理部分別取得圖像資料中之辨識為第1對準標記103A之圖像區域之形狀之中心104A之位置之座標、及辨識為第1對準標記103B之圖像區域之形狀之中心104B之位置之座標。
之後,圖像處理部基於第1對準標記103A之中心104A之位置之座標、及第1對準標記103B之中心104B之位置之座標,取得特定位置,並設為第1基準位置130。藉由圖像處理部而取得之特定位置例如為第1對準標記103A之中心104A之位置之座標、與第1對準標記103B之中心104B之位置之座標之中間之位置。該情形下,第1基準位置130係於第1區域110內取得。圖像處理部取得所取得之第1基準位置130之座標。圖像處理部可取得所取得之第1基準位置130之對準裝置之X方向之座標及Y方向之座標。第1基準位置130不限於一點,可為複數個不同位置之點。
<取得第2基準位置之步驟>
於取得第2基準位置之步驟中,如圖5B所示,對準裝置係利用相機C2進行拍攝。又,圖像處理部如圖7所示般對由相機C2拍攝到之圖像資料進行圖像處理,並辨識第2對準標記203。又,圖像處理部取得辨識出之複數個第2對準標記203之中心204之位置之座標。又,圖像處理部基於取得之複數個第2對準標記203之中心204之位置之座標,取得第2基準位置220。此外,取得第2基準位置之步驟、與取得第1基準位置之步驟之時間序列之前後無關緊要。取得第2基準位置之步驟、與取得第1基準位置之步驟可於同時期進行。
具體而言,於取得第2基準位置之步驟中,對準裝置利用相機C2拍攝被移送基板200。圖像處理部基於由相機C2拍攝到之圖像資料,取得:備置於被移送基板200之緣部202A側之第2對準標記203A之中心204A之位置之座標、及備置於被移送基板200之緣部202B側之第2對準標記203B之中心204B之位置之座標。圖像處理部基於第2對準標記203A之中心204A之位置之座標、及第2對準標記203B之中心204B之位置之座標,取得特定位置,並設為第2基準位置220。由圖像處理部取得之特定位置例如為第2對準標記203A之中心204A之位置之座標、與第2對準標記203B之中心204B之位置之座標之中間之位置。圖像處理部取得所取得之第2基準位置220之座標。圖像處理部可取得所取得之第2基準位置220之對準裝置之X方向之座標及Y方向之座標。此外,第2基準位置220不限於一點,可為複數個不同位置之點。
<定位之步驟>
於定位之步驟中,如圖5C所示,對準裝置以保持基板100、與被移送基板200對準之方式,使保持被移送基板200之載台T於X、Y方向移動,而進行定位。具體而言,對準裝置針對取得之保持基板100之第1基準位置130之座標、及取得之被移送基板200之第2基準位置220之座標,分別取得X方向之差及Y方向之差。之後,對準裝置使載台T移動取得之X方向之差及Y方向之差之大小,將被移送基板200之第2基準位置220與保持基板100之第1基準位置130對準。
<將保持基板按壓於被移送基板之步驟>
對準裝置如圖5D所示般,於將保持基板100與被移送基板200定位後,使處置器H向Z-方向移動。由處置器H保持之保持基板100降下至被移送基板200之位置,將保持於第2面120之發光元件D相對於被移送基板200之被移送區域210向Z-方向施加特定負載而按壓。複數個發光元件D藉由被按壓於被移送基板200,而成為與設置於被移送基板200之複數個電極經由低熔點金屬構件接觸之狀態。
顯示裝置之製造方法,進而保持基板100於被按壓於被移送基板200之狀態下,自備置於與第1面101為相反面側之未圖示之加熱雷射裝置被照射特定波長之加熱雷射光。藉此,吸收所照射之加熱雷射光之被移送基板200之被移送區域210之低熔點金屬構件熔融,將由保持基板100保持之發光元件D、與被移送基板200之電極連接。又,於顯示裝置之製造方法中,進而,保持基板100於被照射加熱雷射光之後,自備置於與保持基板100之第1面101為相反面之切除雷射裝置照射切除雷射光。吸收所照射之切除雷射光之發光元件D之與第2面120之界面部改質,使第2面120與發光元件D脫離。如此,根據顯示裝置之製造方法,由保持基板100保持之發光元件D被移送至被移送基板200。
(變化例)
圖9係變化例之保持基板之主要部分之細節圖。保持基板100之第1區劃112可如圖9所示般包圍複數個第2區劃114。該情形下,第1區劃112以自Z+方向觀察呈以中心116為中心之十字形狀包圍複數個第2區劃114之方式,形成於複數個第2區劃114彼此之間隙。藉此,由於由第1區劃112包圍之面積變大,故相機C1容易辨識藉由自圖5A中所示之燈L照射之光透過第1面101而形成之第1對準標記103。進而,第1區劃112可由複數個第2區劃114包圍。藉此,由於容易利用相機C1來辨識照射燈L之光之情形之拍攝到保持基板100之圖像資料中之相當於第1區劃112之圖像區域之亮度、與相當於第2區劃114之圖像區域之亮度之差,故可進一步高精度地取得第1對準標記103之中心104之位置之座標。此外,自Z+方向觀察到之第1區劃112之形狀不限於十字形狀,可為如圓形、三角形、四角形或六角形之多角形。又,自Z+方向觀察到之第1區劃112之形狀可為將複數個形狀組合而成之形狀。
如以上所說明般,顯示裝置之製造方法包含下述步驟:基於保持基板100之複數個第1對準標記103之位置,取得保持基板100之面之第1基準位置;基於被移送基板200之複數個第2對準標記203之位置,取得被移送基板200之面之第2基準位置220;及將保持基板100與被移送基板200以第1基準位置130與第2基準位置220之位置對準之方式定位。保持基板100自Z+方向觀察區劃為複數個第1區劃112與複數個第2區劃114。第2區劃114自Z+方向觀察以特定間隔配置。第1區劃112自Z+方向觀察備置於複數個第2區劃114彼此之間隙之一部分。第1區劃112之光之透過率高於第2區劃114。第1區劃112自Z+方向觀察形成供光透過之第1對準標記103。
藉此,保持基板100由於具有為第1對準標記103、且光之透過率較第2區劃114為高之複數個第1區劃112、及複數個第2區劃114,故可將透過第1面101之第1區劃112之特定光量之光辨識為第1對準標記103。又,保持基板100之形成第1對準標記103之複數個第1區劃112備置於用於保持發光元件D之複數個第2區劃114彼此之間隙之一部分,如先前技術般,於應保持發光元件D之區域即第2區劃114不具備第1對準標記103,故而,可增多保持基板100保持之發光元件D之數量。又,保持基板100由於在應保持發光元件D之區域即第2區劃114不具備第1對準標記103,故於顯示裝置之製造步序中,在批次將發光元件D自保持基板100移送至被移送基板200之後,無須要有將用於補充之發光元件D移送至被移送基板200之具備第2對準標記203之區域之步序。
第1區劃112可由複數個第2區劃114包圍。
藉此,第1區劃112由於由複數個第2區劃114包圍,故於自保持基板100之第1區域110之面側照射光之情形下,可使於第1區域110之面側之相當於第1區劃112之區域之亮度、與相當於第2區劃114之區域之亮度之差更明確,可提高第1區劃112之易辨識度。
第1區劃112可包圍複數個第2區劃114。
藉此,於自Z+方向觀察之情形下,第1區劃112由於包圍第2區劃114之至少1個,故可將由第1區劃112包圍之區域設為更大之面積,可提高第1區劃112之易辨識度。
第2區劃114自Z+方向觀察配置成格子狀,第1區劃112可備置於由複數個第2區劃114彼此之間隙形成之格子線之一部分。
藉此,第1區劃112由於備置於由配置成格子狀之複數個第2區劃114之間隙形成之格子線之一部分,故無論第2區劃114之形狀及大小為何,均可設為沿著格子線之形狀及大小。
自Z+方向觀察,第1區劃112具有第1面101,第2區劃114具有第2面120,第2面120之起伏可大於第1面101。
藉此,由於第2區劃114之第2面120之起伏大於第1區劃112之第1面101,故第2面120之來自第2面120之正交方向之光反射率變高,透過第2面120與第2面120之相反面之間之光透過率變低。又,第2區劃114由於其來自第2面120之正交方向之光反射率較高,故可使來自第2面120之正交方向之光朝第2面120之正交方向以外之方向反射。
保持基板100之複數個第1區劃112及複數個第2區劃114備置於保持基板100之第1區域110,保持基板100之第1基準位置130可於第1區域110內取得。
藉此,保持基板100由於在第1區域110內取得第1基準位置130,故藉由與被移送基板200之第2基準位置220進行定位,而可實現保持基板100與被移送基板200之定位。又,保持基板100由於在第1區域110內取得第1基準位置130,故可將第1區域110內之發光元件D之位置作為第1基準位置130,而與被移送基板200之第2基準位置220進行定位。
保持基板100自Z+方向觀察經區劃為複數個第1區劃112與複數個第2區劃114。第1區劃112自Z+方向觀察,備置於複數個第2區劃114彼此之間隙之一部分。第1區劃112之光透過率高於第2區劃114。第1區劃112形成第1對準標記103。
藉此,保持基板100由於具有光透過率較第2區劃114為高之複數個第1區劃112、及複數個第2區劃114,故可將透過第1面101之第1區劃112之特定光量之光辨識為第1對準標記103。又,保持基板100之形成第1對準標記103之複數個第1區劃112備置於用於保持發光元件D之複數個第2區劃114彼此之間隙之一部分,如先前技術般,於應保持發光元件D之區域即第2區劃114因不具備第1對準標記103,故可增多由保持基板100保持之發光元件D之數量。又,保持基板100在應保持發光元件D之區域即第2區劃114因不具備第1對準標記103,故於顯示裝置之製造步序中,於將由保持基板100保持之發光元件D移送至被移送基板200之後,不需要將用於補充之補發光元件D移送至被移送基板200之具備第2對準標記203之區域之步序。
以上,說明了較佳之實施形態,但本揭示不限定於如此之實施形態。實施形態所揭示之內容終極而言僅為一例,於不脫離本揭示之旨趣之範圍內可進行各種變更。針對在不脫離本揭示之旨趣之範圍內進行之適宜之變更當然亦屬本揭示之技術性範圍內。
例如,被移送基板之被移送區域可大於保持基板100之第1區域110。於被移送區域具備複數個相當於第1區域110之大小之區域之情形下,複數個第2對準標記於被移送基板之周邊區域就相當於第1區域110之大小之區域之每一者備置,第2基準位置係基於相當於第1區域110之大小之區域之每一者之複數個第2對準標記而取得。
10:顯示裝置
100:保持基板
101:第1面
102A,102B,202A,202B:緣部
103,103A,103B:第1對準標記
104,104A,104B:第1對準標記之中心
110:第1區域
112,112A,112B:第1區劃
114:第2區劃
116:第1區域之中心
120:第2面
122:凸部
130:第1基準位置
200:被移送基板
203,203A,203B:第2對準標記
204,204A,204B:第2對準標記之中心
210:被移送區域
212:被移送區域之中心
214:周邊區域
220:第2基準位置
A-A:剖視箭頭方向
D:發光元件
d:複數個發光元件彼此之間隔
W:第1區劃之寬度
C1,C2:相機
H:處置器
L:燈
T:載台
X,Y,Z:軸/方向
圖1係本實施形態之保持基板之概念仰視圖。
圖2係圖1之主要部分之細節圖。
圖3A係圖2之A-A剖視箭頭方向之剖視圖。
圖3B係顯示圖3A之變化例之剖視圖。
圖4係被移送基板之概念俯視圖。
圖5A係顯示顯示裝置之製造方法中之取得第1基準位置之步驟之概念圖。
圖5B係顯示顯示裝置之製造方法中之取得第2基準位置之步驟之概念圖。
圖5C係顯示顯示裝置之製造方法中之定位之步驟之概念圖。
圖5D係顯示顯示裝置之製造方法中之將保持基板按壓於被移送基板之步驟之概念圖。
圖6係顯示裝置之製造方法中之保持基板之概念俯視圖。
圖7係顯示裝置之製造方法中之被移送基板之概念俯視圖。
圖8係顯示顯示裝置之製造方法中之將保持基板與被移送基板定位後之狀態之概念俯視圖。
圖9係變化例之保持基板之主要部分之細節圖。
100:保持基板
102A,102B:緣部
110:第1區域
112,112A,112B:第1區劃
116:第1區域之中心
D:發光元件
X,Y,Z:軸/方向
Claims (8)
- 一種顯示裝置之製造方法,其包含下述步驟: 基於保持基板之複數個第1對準標記之位置,取得前述保持基板之面上之第1基準位置;及 將前述保持基板與被移送基板以前述保持基板之前述第1基準位置、與前述被移送基板之面上之第2基準位置對準之方式定位;且 前述保持基板自一方向觀察經區劃為複數個第1區劃與複數個第2區劃; 前述第1區劃自前述一方向觀察,備置於複數個前述第2區劃彼此之間隙之一部分,其光透過率高於前述第2區劃,且自前述一方向觀察,形成供光透過之前述第1對準標記。
- 如請求項1之顯示裝置之製造方法,其中前述第1區劃由前述第2區劃包圍。
- 如請求項1之顯示裝置之製造方法,其中前述第1區劃包圍前述第2區劃。
- 如請求項1之顯示裝置之製造方法,其中複數個前述第2區劃自前述一方向觀察配置成格子狀;且 複數個前述第1區劃備置於由配置成格子狀之複數個前述第2區劃彼此之間隙形成之格子線之一部分。
- 如請求項1至4中任一項之顯示裝置之製造方法,其中自前述一方向觀察,前述第1區劃具有第1面,前述第2區劃具有第2面;且 前述第2面具備高低差大於前述第1面之起伏。
- 如請求項1至4中任一項之顯示裝置之製造方法,其中複數個前述第1區劃及複數個前述第2區劃備置於前述保持基板之第1區域;且 前述保持基板之前述第1基準位置係於前述第1區域內取得。
- 如請求項6之顯示裝置之製造方法,其中前述被移送基板具備:與前述保持基板之前述第1區域對應之被移送區域、及位於前述被移送區域之外之複數個第2對準標記;且 前述第2基準位置係基於複數個前述第2對準標記而取得。
- 一種保持基板,其自一方向觀察經區劃為複數個第1區劃、及複數個第2區劃;且 前述第2區劃自前述一方向觀察以特定間隔配置; 前述第1區劃自前述一方向觀察,備置於複數個前述第2區劃彼此之間隙之一部分; 前述第1區劃之光透過率高於前述第2區劃,且自一方向觀察,形成供光透過之第1對準標記。
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TW201324469A (zh) * | 2011-11-30 | 2013-06-16 | Dainippon Screen Mfg | 對準方法、轉印方法及轉印裝置 |
TWI418946B (zh) * | 2007-02-01 | 2013-12-11 | Ushio Electric Inc | The method of fitting the liquid crystal panel |
TW201433860A (zh) * | 2013-02-28 | 2014-09-01 | Hitachi High Tech Corp | 基板貼合裝置及基板貼合用具 |
TW201532729A (zh) * | 2014-02-24 | 2015-09-01 | Sat Co Ltd | 基板之貼合裝置 |
TW202046528A (zh) * | 2019-06-07 | 2020-12-16 | 日商V科技股份有限公司 | 貼合裝置、貼合方法及顯示裝置之製造方法 |
TW202119671A (zh) * | 2019-07-23 | 2021-05-16 | 日商佳能特機股份有限公司 | 對準機構、對準方法、成膜裝置及成膜方法 |
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TWI418946B (zh) * | 2007-02-01 | 2013-12-11 | Ushio Electric Inc | The method of fitting the liquid crystal panel |
TW201324469A (zh) * | 2011-11-30 | 2013-06-16 | Dainippon Screen Mfg | 對準方法、轉印方法及轉印裝置 |
TW201433860A (zh) * | 2013-02-28 | 2014-09-01 | Hitachi High Tech Corp | 基板貼合裝置及基板貼合用具 |
TW201532729A (zh) * | 2014-02-24 | 2015-09-01 | Sat Co Ltd | 基板之貼合裝置 |
TW202046528A (zh) * | 2019-06-07 | 2020-12-16 | 日商V科技股份有限公司 | 貼合裝置、貼合方法及顯示裝置之製造方法 |
TW202119671A (zh) * | 2019-07-23 | 2021-05-16 | 日商佳能特機股份有限公司 | 對準機構、對準方法、成膜裝置及成膜方法 |
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