TW202209395A - 具有整合式密封件的冷卻邊緣環 - Google Patents

具有整合式密封件的冷卻邊緣環 Download PDF

Info

Publication number
TW202209395A
TW202209395A TW110111519A TW110111519A TW202209395A TW 202209395 A TW202209395 A TW 202209395A TW 110111519 A TW110111519 A TW 110111519A TW 110111519 A TW110111519 A TW 110111519A TW 202209395 A TW202209395 A TW 202209395A
Authority
TW
Taiwan
Prior art keywords
heat transfer
edge ring
transfer gas
substrate processing
interface
Prior art date
Application number
TW110111519A
Other languages
English (en)
Chinese (zh)
Inventor
亞當 克利斯多夫 麥斯
約翰 霍藍德
亞歷山大 馬堤育斯金
拉傑許 多雷
Original Assignee
美商蘭姆研究公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商蘭姆研究公司 filed Critical 美商蘭姆研究公司
Publication of TW202209395A publication Critical patent/TW202209395A/zh

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C23C16/466—Cooling of the substrate using thermal contact gas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0441—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
TW110111519A 2020-04-02 2021-03-30 具有整合式密封件的冷卻邊緣環 TW202209395A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202063004055P 2020-04-02 2020-04-02
US63/004,055 2020-04-02

Publications (1)

Publication Number Publication Date
TW202209395A true TW202209395A (zh) 2022-03-01

Family

ID=77929351

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110111519A TW202209395A (zh) 2020-04-02 2021-03-30 具有整合式密封件的冷卻邊緣環

Country Status (6)

Country Link
US (1) US20230133798A1 (enExample)
JP (2) JP7754833B2 (enExample)
KR (2) KR102902338B1 (enExample)
CN (1) CN115362543A (enExample)
TW (1) TW202209395A (enExample)
WO (1) WO2021202136A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI856498B (zh) * 2022-03-08 2024-09-21 日商日本碍子股份有限公司 半導體製造裝置用構件

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12334383B2 (en) 2021-12-16 2025-06-17 Applied Materials, Inc. Substrate support gap pumping to prevent glow discharge and light-up
WO2025128412A1 (en) * 2023-12-11 2025-06-19 Lam Research Corporation Cooled edge ring with securing mechanism

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4592916B2 (ja) * 2000-04-25 2010-12-08 東京エレクトロン株式会社 被処理体の載置装置
US6475336B1 (en) * 2000-10-06 2002-11-05 Lam Research Corporation Electrostatically clamped edge ring for plasma processing
US20040261946A1 (en) * 2003-04-24 2004-12-30 Tokyo Electron Limited Plasma processing apparatus, focus ring, and susceptor
JP2009290087A (ja) * 2008-05-30 2009-12-10 Tokyo Electron Ltd フォーカスリング及びプラズマ処理装置
JP5482282B2 (ja) * 2009-03-03 2014-05-07 東京エレクトロン株式会社 載置台構造及び成膜装置
JP5642531B2 (ja) 2010-12-22 2014-12-17 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP6689020B2 (ja) * 2013-08-21 2020-04-28 東京エレクトロン株式会社 プラズマ処理装置
JP5798677B2 (ja) * 2014-10-29 2015-10-21 東京エレクトロン株式会社 基板処理装置及び基板処理方法
US10658222B2 (en) * 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
JP6435247B2 (ja) * 2015-09-03 2018-12-05 新光電気工業株式会社 静電チャック装置及び静電チャック装置の製造方法
JP6806051B2 (ja) * 2015-10-21 2021-01-06 住友大阪セメント株式会社 静電チャック装置
US9922857B1 (en) * 2016-11-03 2018-03-20 Lam Research Corporation Electrostatically clamped edge ring
WO2019088204A1 (ja) * 2017-11-06 2019-05-09 日本碍子株式会社 静電チャックアセンブリ、静電チャック及びフォーカスリング
JP2021077752A (ja) * 2019-11-07 2021-05-20 東京エレクトロン株式会社 プラズマ処理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI856498B (zh) * 2022-03-08 2024-09-21 日商日本碍子股份有限公司 半導體製造裝置用構件

Also Published As

Publication number Publication date
WO2021202136A1 (en) 2021-10-07
KR102902338B1 (ko) 2025-12-18
KR20220164013A (ko) 2022-12-12
CN115362543A (zh) 2022-11-18
JP2026004461A (ja) 2026-01-14
KR20260003401A (ko) 2026-01-06
JP2023520034A (ja) 2023-05-15
US20230133798A1 (en) 2023-05-04
JP7754833B2 (ja) 2025-10-15

Similar Documents

Publication Publication Date Title
US12451335B2 (en) Multi-plate electrostatic chucks with ceramic baseplates
TWI783960B (zh) 具有改良的處理均勻性之基板支撐件
TWI763969B (zh) 用於電漿處理中之均勻性控制的漸縮上電極
US20230260816A1 (en) Electrostatic chucks with coolant gas zones and corresponding groove and monopolar electrostatic clamping electrode patterns
TWI796249B (zh) 可運動的邊緣環設計
TWI752051B (zh) 用以防止電性發弧與點火並改善製程均勻性之具有特徵部的靜電夾頭
TWI775814B (zh) 用以降低發弧的氦插塞設計
TWI827654B (zh) 用於基板處理系統之侷限環與在基板處理系統中使用侷限環的方法
JP2017216441A (ja) 静電チャック接合のための永久二次浸食封じ込め
JP2026004461A (ja) 一体型シールを備える冷却エッジリング
US12020960B2 (en) Determining and controlling substrate temperature during substrate processing
US20250054778A1 (en) Improved thermal and electrical interface between parts in an etch chamber
US20230253193A1 (en) Substrate support with uniform temperature across a substrate
TWI849145B (zh) 基板處理系統用的縮小直徑承載環硬件
TW202231136A (zh) 用於浮動變壓器耦合電漿腔室氣體板的承載環
WO2025128412A1 (en) Cooled edge ring with securing mechanism
WO2024030307A1 (en) System and method to maintain constant clamping pressure during chamber rebooting and power failure instances