JP7754833B2 - 一体型シールを備える冷却エッジリング - Google Patents

一体型シールを備える冷却エッジリング

Info

Publication number
JP7754833B2
JP7754833B2 JP2022559852A JP2022559852A JP7754833B2 JP 7754833 B2 JP7754833 B2 JP 7754833B2 JP 2022559852 A JP2022559852 A JP 2022559852A JP 2022559852 A JP2022559852 A JP 2022559852A JP 7754833 B2 JP7754833 B2 JP 7754833B2
Authority
JP
Japan
Prior art keywords
substrate support
edge ring
heat transfer
base plate
transfer gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022559852A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023520034A5 (enExample
JP2023520034A (ja
Inventor
メース・アダム・クリストファー
ホーランド・ジョン
マツシュキン・アレキサンダー
ドライ・ラジェシュ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of JP2023520034A publication Critical patent/JP2023520034A/ja
Publication of JP2023520034A5 publication Critical patent/JP2023520034A5/ja
Priority to JP2025166072A priority Critical patent/JP2026004461A/ja
Application granted granted Critical
Publication of JP7754833B2 publication Critical patent/JP7754833B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C23C16/466—Cooling of the substrate using thermal contact gas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0441—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
JP2022559852A 2020-04-02 2021-03-22 一体型シールを備える冷却エッジリング Active JP7754833B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025166072A JP2026004461A (ja) 2020-04-02 2025-10-02 一体型シールを備える冷却エッジリング

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063004055P 2020-04-02 2020-04-02
US63/004,055 2020-04-02
PCT/US2021/023406 WO2021202136A1 (en) 2020-04-02 2021-03-22 Cooled edge ring with integrated seals

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025166072A Division JP2026004461A (ja) 2020-04-02 2025-10-02 一体型シールを備える冷却エッジリング

Publications (3)

Publication Number Publication Date
JP2023520034A JP2023520034A (ja) 2023-05-15
JP2023520034A5 JP2023520034A5 (enExample) 2024-03-28
JP7754833B2 true JP7754833B2 (ja) 2025-10-15

Family

ID=77929351

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2022559852A Active JP7754833B2 (ja) 2020-04-02 2021-03-22 一体型シールを備える冷却エッジリング
JP2025166072A Pending JP2026004461A (ja) 2020-04-02 2025-10-02 一体型シールを備える冷却エッジリング

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2025166072A Pending JP2026004461A (ja) 2020-04-02 2025-10-02 一体型シールを備える冷却エッジリング

Country Status (6)

Country Link
US (1) US20230133798A1 (enExample)
JP (2) JP7754833B2 (enExample)
KR (2) KR102902338B1 (enExample)
CN (1) CN115362543A (enExample)
TW (1) TW202209395A (enExample)
WO (1) WO2021202136A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12334383B2 (en) 2021-12-16 2025-06-17 Applied Materials, Inc. Substrate support gap pumping to prevent glow discharge and light-up
JP7554220B2 (ja) * 2022-03-08 2024-09-19 日本碍子株式会社 半導体製造装置用部材
WO2025128412A1 (en) * 2023-12-11 2025-06-19 Lam Research Corporation Cooled edge ring with securing mechanism

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004511901A (ja) 2000-10-06 2004-04-15 ラム　リサーチ　コーポレーション 静電気的にクランプされるプラズマ処理用エッジリング
JP2011192661A (ja) 2009-03-03 2011-09-29 Tokyo Electron Ltd 載置台構造、成膜装置及び原料回収方法
JP2015041451A (ja) 2013-08-21 2015-03-02 東京エレクトロン株式会社 プラズマ処理装置
JP2015062237A (ja) 2014-10-29 2015-04-02 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP2016146472A (ja) 2015-01-16 2016-08-12 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 半導体ウエハ処理中におけるエッジ処理制御のための可動式エッジ連結リング
JP2017050468A (ja) 2015-09-03 2017-03-09 新光電気工業株式会社 静電チャック装置及び静電チャック装置の製造方法
WO2019088204A1 (ja) 2017-11-06 2019-05-09 日本碍子株式会社 静電チャックアセンブリ、静電チャック及びフォーカスリング
JP2019534571A (ja) 2016-11-03 2019-11-28 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 静電気的にクランプされたエッジリング

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4592916B2 (ja) * 2000-04-25 2010-12-08 東京エレクトロン株式会社 被処理体の載置装置
US20040261946A1 (en) * 2003-04-24 2004-12-30 Tokyo Electron Limited Plasma processing apparatus, focus ring, and susceptor
JP2009290087A (ja) * 2008-05-30 2009-12-10 Tokyo Electron Ltd フォーカスリング及びプラズマ処理装置
JP5642531B2 (ja) 2010-12-22 2014-12-17 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP6806051B2 (ja) * 2015-10-21 2021-01-06 住友大阪セメント株式会社 静電チャック装置
JP2021077752A (ja) * 2019-11-07 2021-05-20 東京エレクトロン株式会社 プラズマ処理装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004511901A (ja) 2000-10-06 2004-04-15 ラム　リサーチ　コーポレーション 静電気的にクランプされるプラズマ処理用エッジリング
JP2011192661A (ja) 2009-03-03 2011-09-29 Tokyo Electron Ltd 載置台構造、成膜装置及び原料回収方法
JP2015041451A (ja) 2013-08-21 2015-03-02 東京エレクトロン株式会社 プラズマ処理装置
JP2015062237A (ja) 2014-10-29 2015-04-02 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP2016146472A (ja) 2015-01-16 2016-08-12 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 半導体ウエハ処理中におけるエッジ処理制御のための可動式エッジ連結リング
JP2017050468A (ja) 2015-09-03 2017-03-09 新光電気工業株式会社 静電チャック装置及び静電チャック装置の製造方法
JP2019534571A (ja) 2016-11-03 2019-11-28 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 静電気的にクランプされたエッジリング
WO2019088204A1 (ja) 2017-11-06 2019-05-09 日本碍子株式会社 静電チャックアセンブリ、静電チャック及びフォーカスリング

Also Published As

Publication number Publication date
WO2021202136A1 (en) 2021-10-07
KR102902338B1 (ko) 2025-12-18
KR20220164013A (ko) 2022-12-12
CN115362543A (zh) 2022-11-18
TW202209395A (zh) 2022-03-01
JP2026004461A (ja) 2026-01-14
KR20260003401A (ko) 2026-01-06
JP2023520034A (ja) 2023-05-15
US20230133798A1 (en) 2023-05-04

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