CN115362543A - 具有整合式密封件的冷却边缘环 - Google Patents

具有整合式密封件的冷却边缘环 Download PDF

Info

Publication number
CN115362543A
CN115362543A CN202180027086.5A CN202180027086A CN115362543A CN 115362543 A CN115362543 A CN 115362543A CN 202180027086 A CN202180027086 A CN 202180027086A CN 115362543 A CN115362543 A CN 115362543A
Authority
CN
China
Prior art keywords
substrate
edge ring
heat transfer
transfer gas
substrate support
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180027086.5A
Other languages
English (en)
Chinese (zh)
Inventor
亚当·克里斯多夫·梅斯
约翰·霍兰德
亚历山大·马丘什金
拉杰什·多雷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of CN115362543A publication Critical patent/CN115362543A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C23C16/466—Cooling of the substrate using thermal contact gas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0441—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
CN202180027086.5A 2020-04-02 2021-03-22 具有整合式密封件的冷却边缘环 Pending CN115362543A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063004055P 2020-04-02 2020-04-02
US63/004,055 2020-04-02
PCT/US2021/023406 WO2021202136A1 (en) 2020-04-02 2021-03-22 Cooled edge ring with integrated seals

Publications (1)

Publication Number Publication Date
CN115362543A true CN115362543A (zh) 2022-11-18

Family

ID=77929351

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180027086.5A Pending CN115362543A (zh) 2020-04-02 2021-03-22 具有整合式密封件的冷却边缘环

Country Status (6)

Country Link
US (1) US20230133798A1 (enExample)
JP (2) JP7754833B2 (enExample)
KR (2) KR102902338B1 (enExample)
CN (1) CN115362543A (enExample)
TW (1) TW202209395A (enExample)
WO (1) WO2021202136A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12334383B2 (en) 2021-12-16 2025-06-17 Applied Materials, Inc. Substrate support gap pumping to prevent glow discharge and light-up
JP7554220B2 (ja) * 2022-03-08 2024-09-19 日本碍子株式会社 半導体製造装置用部材
WO2025128412A1 (en) * 2023-12-11 2025-06-19 Lam Research Corporation Cooled edge ring with securing mechanism

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4592916B2 (ja) * 2000-04-25 2010-12-08 東京エレクトロン株式会社 被処理体の載置装置
US6475336B1 (en) * 2000-10-06 2002-11-05 Lam Research Corporation Electrostatically clamped edge ring for plasma processing
US20040261946A1 (en) * 2003-04-24 2004-12-30 Tokyo Electron Limited Plasma processing apparatus, focus ring, and susceptor
JP2009290087A (ja) * 2008-05-30 2009-12-10 Tokyo Electron Ltd フォーカスリング及びプラズマ処理装置
JP5482282B2 (ja) * 2009-03-03 2014-05-07 東京エレクトロン株式会社 載置台構造及び成膜装置
JP5642531B2 (ja) 2010-12-22 2014-12-17 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP6689020B2 (ja) * 2013-08-21 2020-04-28 東京エレクトロン株式会社 プラズマ処理装置
JP5798677B2 (ja) * 2014-10-29 2015-10-21 東京エレクトロン株式会社 基板処理装置及び基板処理方法
US10658222B2 (en) * 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
JP6435247B2 (ja) * 2015-09-03 2018-12-05 新光電気工業株式会社 静電チャック装置及び静電チャック装置の製造方法
JP6806051B2 (ja) * 2015-10-21 2021-01-06 住友大阪セメント株式会社 静電チャック装置
US9922857B1 (en) * 2016-11-03 2018-03-20 Lam Research Corporation Electrostatically clamped edge ring
WO2019088204A1 (ja) * 2017-11-06 2019-05-09 日本碍子株式会社 静電チャックアセンブリ、静電チャック及びフォーカスリング
JP2021077752A (ja) * 2019-11-07 2021-05-20 東京エレクトロン株式会社 プラズマ処理装置

Also Published As

Publication number Publication date
WO2021202136A1 (en) 2021-10-07
KR102902338B1 (ko) 2025-12-18
KR20220164013A (ko) 2022-12-12
TW202209395A (zh) 2022-03-01
JP2026004461A (ja) 2026-01-14
KR20260003401A (ko) 2026-01-06
JP2023520034A (ja) 2023-05-15
US20230133798A1 (en) 2023-05-04
JP7754833B2 (ja) 2025-10-15

Similar Documents

Publication Publication Date Title
US20260081117A1 (en) Tapered upper electrode for uniformity control in plasma processing
TWI783960B (zh) 具有改良的處理均勻性之基板支撐件
JP7453149B2 (ja) セラミックベースプレートを備えるマルチプレート静電チャック
TWI765922B (zh) 具有小間隙之銷升降器組件
TWI796249B (zh) 可運動的邊緣環設計
US20230260816A1 (en) Electrostatic chucks with coolant gas zones and corresponding groove and monopolar electrostatic clamping electrode patterns
TWI775814B (zh) 用以降低發弧的氦插塞設計
US11069553B2 (en) Electrostatic chuck with features for preventing electrical arcing and light-up and improving process uniformity
US11515128B2 (en) Confinement ring with extended life
CN107768275A (zh) 利用可移动边缘环和气体注入调整控制晶片上cd均匀性
JP2026004461A (ja) 一体型シールを備える冷却エッジリング
US12020960B2 (en) Determining and controlling substrate temperature during substrate processing
CN115398616A (zh) 用于衬底处理系统的高精度边缘环对中
WO2023114082A1 (en) Improved thermal and electrical interface between parts in an etch chamber
TWI897938B (zh) 電漿排除區域環、電漿排除區域組件及基板處理系統
US20230253193A1 (en) Substrate support with uniform temperature across a substrate
TWI849145B (zh) 基板處理系統用的縮小直徑承載環硬件
WO2025128412A1 (en) Cooled edge ring with securing mechanism
WO2024030307A1 (en) System and method to maintain constant clamping pressure during chamber rebooting and power failure instances

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination