KR102902338B1 - 통합된 시일들 (seals) 을 갖는 냉각된 에지 링 - Google Patents

통합된 시일들 (seals) 을 갖는 냉각된 에지 링

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Publication number
KR102902338B1
KR102902338B1 KR1020227038260A KR20227038260A KR102902338B1 KR 102902338 B1 KR102902338 B1 KR 102902338B1 KR 1020227038260 A KR1020227038260 A KR 1020227038260A KR 20227038260 A KR20227038260 A KR 20227038260A KR 102902338 B1 KR102902338 B1 KR 102902338B1
Authority
KR
South Korea
Prior art keywords
substrate support
edge ring
heat transfer
paragraph
base plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020227038260A
Other languages
English (en)
Korean (ko)
Other versions
KR20220164013A (ko
Inventor
아담 크리스토퍼 메이스
존 홀랜드
알렉산더 마티슈킨
라제쉬 도라이
Original Assignee
램 리써치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Priority to KR1020257041950A priority Critical patent/KR20260003401A/ko
Publication of KR20220164013A publication Critical patent/KR20220164013A/ko
Application granted granted Critical
Publication of KR102902338B1 publication Critical patent/KR102902338B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • H01L21/68735—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C23C16/466—Cooling of the substrate using thermal contact gas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H01L21/67109—
    • H01L21/67126—
    • H01L21/68785—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0441—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
KR1020227038260A 2020-04-02 2021-03-22 통합된 시일들 (seals) 을 갖는 냉각된 에지 링 Active KR102902338B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020257041950A KR20260003401A (ko) 2020-04-02 2021-03-22 통합된 시일들을 갖는 냉각된 에지 링

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063004055P 2020-04-02 2020-04-02
US63/004,055 2020-04-02
PCT/US2021/023406 WO2021202136A1 (en) 2020-04-02 2021-03-22 Cooled edge ring with integrated seals

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020257041950A Division KR20260003401A (ko) 2020-04-02 2021-03-22 통합된 시일들을 갖는 냉각된 에지 링

Publications (2)

Publication Number Publication Date
KR20220164013A KR20220164013A (ko) 2022-12-12
KR102902338B1 true KR102902338B1 (ko) 2025-12-18

Family

ID=77929351

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020227038260A Active KR102902338B1 (ko) 2020-04-02 2021-03-22 통합된 시일들 (seals) 을 갖는 냉각된 에지 링
KR1020257041950A Pending KR20260003401A (ko) 2020-04-02 2021-03-22 통합된 시일들을 갖는 냉각된 에지 링

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020257041950A Pending KR20260003401A (ko) 2020-04-02 2021-03-22 통합된 시일들을 갖는 냉각된 에지 링

Country Status (6)

Country Link
US (1) US20230133798A1 (enExample)
JP (2) JP7754833B2 (enExample)
KR (2) KR102902338B1 (enExample)
CN (1) CN115362543A (enExample)
TW (1) TW202209395A (enExample)
WO (1) WO2021202136A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12334383B2 (en) 2021-12-16 2025-06-17 Applied Materials, Inc. Substrate support gap pumping to prevent glow discharge and light-up
JP7554220B2 (ja) * 2022-03-08 2024-09-19 日本碍子株式会社 半導体製造装置用部材
WO2025128412A1 (en) * 2023-12-11 2025-06-19 Lam Research Corporation Cooled edge ring with securing mechanism

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090294064A1 (en) 2008-05-30 2009-12-03 Tokyo Electron Limited Focus ring and plasma processing apparatus
JP2012134375A (ja) 2010-12-22 2012-07-12 Tokyo Electron Ltd 基板処理装置及び基板処理方法
US20180166312A1 (en) * 2016-11-03 2018-06-14 Lam Research Corporation Electrostatically clamped edge ring
WO2019088204A1 (ja) * 2017-11-06 2019-05-09 日本碍子株式会社 静電チャックアセンブリ、静電チャック及びフォーカスリング

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4592916B2 (ja) * 2000-04-25 2010-12-08 東京エレクトロン株式会社 被処理体の載置装置
US6475336B1 (en) * 2000-10-06 2002-11-05 Lam Research Corporation Electrostatically clamped edge ring for plasma processing
US20040261946A1 (en) * 2003-04-24 2004-12-30 Tokyo Electron Limited Plasma processing apparatus, focus ring, and susceptor
JP5482282B2 (ja) * 2009-03-03 2014-05-07 東京エレクトロン株式会社 載置台構造及び成膜装置
JP6689020B2 (ja) * 2013-08-21 2020-04-28 東京エレクトロン株式会社 プラズマ処理装置
JP5798677B2 (ja) * 2014-10-29 2015-10-21 東京エレクトロン株式会社 基板処理装置及び基板処理方法
US10658222B2 (en) * 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
JP6435247B2 (ja) * 2015-09-03 2018-12-05 新光電気工業株式会社 静電チャック装置及び静電チャック装置の製造方法
JP6806051B2 (ja) * 2015-10-21 2021-01-06 住友大阪セメント株式会社 静電チャック装置
JP2021077752A (ja) * 2019-11-07 2021-05-20 東京エレクトロン株式会社 プラズマ処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090294064A1 (en) 2008-05-30 2009-12-03 Tokyo Electron Limited Focus ring and plasma processing apparatus
JP2012134375A (ja) 2010-12-22 2012-07-12 Tokyo Electron Ltd 基板処理装置及び基板処理方法
US20180166312A1 (en) * 2016-11-03 2018-06-14 Lam Research Corporation Electrostatically clamped edge ring
WO2019088204A1 (ja) * 2017-11-06 2019-05-09 日本碍子株式会社 静電チャックアセンブリ、静電チャック及びフォーカスリング

Also Published As

Publication number Publication date
WO2021202136A1 (en) 2021-10-07
KR20220164013A (ko) 2022-12-12
CN115362543A (zh) 2022-11-18
TW202209395A (zh) 2022-03-01
JP2026004461A (ja) 2026-01-14
KR20260003401A (ko) 2026-01-06
JP2023520034A (ja) 2023-05-15
US20230133798A1 (en) 2023-05-04
JP7754833B2 (ja) 2025-10-15

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