TW202146359A - 透氣性構件、半導體製造裝置用構件、栓塞及吸著構件 - Google Patents
透氣性構件、半導體製造裝置用構件、栓塞及吸著構件 Download PDFInfo
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- TW202146359A TW202146359A TW110114927A TW110114927A TW202146359A TW 202146359 A TW202146359 A TW 202146359A TW 110114927 A TW110114927 A TW 110114927A TW 110114927 A TW110114927 A TW 110114927A TW 202146359 A TW202146359 A TW 202146359A
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Abstract
本揭示的透氣性構件係包含柱狀或板狀的多孔質陶瓷,且該多孔質陶瓷之外周面的粗糙度曲線的均方根傾斜(RΔq)較前述多孔質陶瓷之主面的粗糙度曲線的均方根傾斜(RΔq)還大。
Description
本揭示係關於一種透氣性構件及具備該透氣性構件而形成的栓塞、吸著構件等半導體製造裝置用構件。
以往,在電漿蝕刻(plasma etching)裝置等半導體製造裝置中,如專利文獻1所示,係對被載置於基板支持總成上的半導體晶圓等的基板、與用以將電漿生成用氣體導入以朝向基板進行供給的噴淋板(shower plate)(氣體分配板)之間施加高頻電壓而設為電漿狀態,以對基板表面進行成膜、或對基板表面所形成的薄膜進行蝕刻。
該基板支持總成於其厚度方向具備用以供給氦(helium)等冷卻用氣體的貫通孔,且於該貫通孔插入有透氣性栓塞,該透氣性栓塞係由AlO/SiO、AlO/MgO/SiO、SiC、SiN、AlN/SiO等多孔質陶瓷所構成。
此外,在專利文獻2、3中揭示一種半導體製造裝置用構件,該半導體製造裝置用構件係具備:靜電夾盤(chuck),具有用以載置晶圓之載置面;以及冷卻板,係位於該靜電夾盤的下側,且具有用以供給氦(He)等冷卻用氣體之氣
體供給孔。靜電夾盤係具備:內部空間,係連接於氣體供給孔;以及氣體排放孔,係連接於內部空間,且用以排放通過氣體供給孔、內部空間之冷卻用氣體。內部空間係安裝有用以抑制放電之圓板狀的透氣性栓塞。專利文獻2所示的透氣性栓塞的外周面係藉由接著劑來固定於靜電夾盤。
(先前技術文獻)
(專利文獻)
專利文獻1:日本專利公報特開2018-162205號
專利文獻2:國際公開第2019/009028號
本揭示的透氣性構件係包含柱狀或板狀的多孔質陶瓷,且該多孔質陶瓷之外周面的粗糙度曲線的均方根傾斜(RΔq)較前述多孔質陶瓷之主面的粗糙度曲線的均方根傾斜(RΔq)還大。
本揭示的透氣性構件係包含柱狀或板狀的多孔質陶瓷,且該多孔質陶瓷之外周面的粗糙度曲線的均方根傾斜(RΔq)為大於或等於0.2且小於或等於0.8。
本揭示的半導體製造裝置用構件係具備上述透氣性構件而形成。
本揭示的栓塞係包含上述透氣性構件。
本揭示的吸著構件係包含上記透氣性構件。
1:腔室
2:噴淋板
2a:擴散部
2b:氣體供給部
3:基板支持總成
4:安裝部
5:絕緣部
6:支持部
7:熱傳導部
8:靜電吸著部
9:接合層
10:夾鉗電極
11:O型環
12:貫通孔
13:栓塞
14:栓塞
15:高頻電源
20:電漿處理裝置
30:靜電夾盤
31:載置面
32:凸狀部
33:內部空間
34:氣體排放孔
35:底面
36:段差面
37:栓塞
38:內周面
39:接著層
40:冷卻構件
41:氣體供給孔
50:接著層
51:連接孔
60:半導體製造裝置用構件
70:斜角蝕刻器
71:處理室
72:吸著構件
73:支持構件
74:氣體導入管
75:噴淋板
76:下部電極
77:下部支架環
78:上部電極
79:上部環
80:密閉區域
W:被處理構件
P:電漿空間(電漿)
G:電漿生成用氣體
圖1係顯示具備屬於本揭示之透氣性構件的栓塞的電漿處理裝置的部分之剖視圖。
圖2為配置於圖1所示之電漿處理裝置內部的基板支持總成的放大剖視圖。
圖3A係顯示具備屬於本揭示之透氣性構件的栓塞的半導體裝置用構件的概略剖視圖。
圖3B為圖3A之A部分的放大剖視圖。
圖4係顯示具備屬於本揭示之透氣性構件的吸著構件的斜角蝕刻器的概略示意圖。
圖5係顯示本揭示之多孔質陶瓷的X射線繞射圖譜的一例。
以下,參照圖式詳細說明本揭示的透氣性構件的一例。惟,本說明書所有圖式中,只要不產生混淆,對相同的部分係標示相同的符號並適當省略其說明。
圖1係顯示具備屬於本揭示之半導體製造裝置用構件的栓塞的電漿處理裝置的部分剖視圖。圖2為配置於圖1所示之電漿處理裝置的內部的基本支持總成的放大剖視圖。
圖1所示之電漿處理裝置20例如為電漿蝕刻裝置,該電漿處理裝置20係具備於內部配置半導體晶圓等被處理構件W的腔室1,並於腔室1內的上側、下側以相對向的方式分別配置有噴淋板2、基板支持總成3。
噴淋板2係具備:擴散部2a、及由多孔質陶瓷所構成的氣體供給部2b;其中,該擴散部2a係屬於用以擴散電漿生成用氣體G的內部空間,該氣體供給部2b係具有多數個用以將電漿生成用氣體G供給至腔室1內的氣體通路(氣孔)。
並且,從氣體供給部2b所排放出噴淋狀的電漿生成用氣體G係藉由高頻電源15之高頻電力的供給而成為電漿,並形成電漿空間P。
在此,就電漿生成用氣體G之例,可列舉有:SF6、CF4、CHF3、ClF3、NF3、C4F8、HF等氟系氣體、Cl2、HCl、BCl3、CCl4等氯系氣體。
基板支持總成3為靜電夾盤,該靜電夾盤係具備安裝部4、絕緣部5、支持部6、熱傳導部7及靜電吸著部8而形成者;例如,如圖2所示,靜電吸著部8係隔著由聚矽氧接著劑所構成的接合層9而與熱傳導部7接合。
靜電吸著部8為藉由靜電吸著力而保持被處理構件W者,且於該靜電吸著部8的內部配置有複數個夾鉗電極10。夾鉗電極10係經由匹配電路而與高頻電源電性結合,該匹配電路係用以將由電漿生成用氣體G所生成的電漿P維持在腔室1內者。
並且,藉由電漿所含有的離子及自由基(radical),對被處理構件W之表面所形成的被覆膜進行蝕刻處理。
O型環11係安裝於接合層9的周圍,並用以保護接合層9。絕緣部5例如由塑膠(plastic)所構成,且與安裝部4電性絕緣。
基板支持總成3係具備沿上下方向貫通的貫通孔12。栓塞13、14係插入於貫通孔12。也就是說,栓塞13係設置於靜電吸著部8內的貫通孔12,而且栓塞14係設置於絕緣部5內的貫通孔12。栓塞13為直筒狀的圓柱體,栓
塞14係具備圓柱狀的軸部、及於軸部的一端直徑比軸部還大的凸緣部而形成的圓柱體。貫通孔12係用以將冷卻用的氦氣體供給至腔室1內的通路。
當供用以洗淨腔室1的電漿P通過貫通孔12時,栓塞13、14會捕捉電漿P內懸浮的粒子,可抑制如此的粒子侵入到基板支持總成3內的情形。此外,栓塞13、14可抑制於貫通孔12內之二次性電漿的生成。
圖3A、圖3B係顯示具備屬於本揭示之透氣性構件的栓塞的半導體製造裝置用構件的概略。圖3A為剖視圖,圖3B係A部放大的剖視圖。
半導體製造裝置用構件60係具備有靜電夾盤30、以及冷卻構件40;其中,該靜電夾盤30係具有載置半導體晶圓等被處理構件W的載置面31,而該冷卻構件40係位於靜電夾盤30的下側,為圓板狀並用以冷卻被處理構件W。靜電夾盤30係於載置面31側具有複數個凸狀部32,且載置面31為凸狀部32的頂面。
冷卻構件40為圓板狀構件,且係由例如鋁之高熱傳導率的金屬所構成,且該冷卻構件40具有用以供給氦等冷卻氣體的氣體供給孔41。氣體供給孔41係朝冷卻構件40的厚度方向貫通。
靜電夾盤30係由以氧化鋁、氧化釔、釔鋁複合氧化物(YAG、YAM及YAP中的至少一者)、氮化鋁等為主成分的緻密質陶瓷所構成的圓板狀構件,且該靜電夾盤30係具有:複數個內部空間33、以及連通於內部空間33的複數個氣體排放孔34。內部空間33係與氣體供給孔41連通。氣體排放孔34為剖面圓形,並氣體排放孔34其直徑係比內部空間33的直徑還小,且貫通位於內部空間33側的底面35、以及處於比載置面31還低位置的段差面36。
氣體排放孔34係對於各個內部空間33設置複數個。於內部空間33係收容有由圓板狀的多孔質陶瓷所構成的栓塞37。
栓塞37的尺寸例如:外徑為4mm至8mm、厚度為0.8mm至1.5mm。
栓塞37係隔著絕緣性的接著層39而與底面35接著。接著層39例如由聚醯亞胺接著劑、環氧接著劑、聚矽氧片等所構成。圖3A、圖3B所示之半導體製造裝置用構件係接著層39沿著底面35而設置,惟亦可沿著形成內部空間33的內周面38來設置絕緣性的接著層。
於內部空間33的中心位置及其周圍以同心圓狀的方式設置複數個氣體排放孔34,該氣體排放孔34個數例如為五個至九個。氣體供給孔41係設置從與內部空間33的中心位置往外周側偏移的位置。
冷卻構件40與靜電夾盤30係隔著絕緣性的接著層50接合。接著層50當中,連接於氣體供給孔41的部分係形成有連接孔51。
圖4係顯示具備屬於本揭示之透氣性構件的吸著構件的斜角蝕刻器(bevel etcher)的概略示意圖。圖4所示之斜角蝕刻器70為電漿洗淨用的裝置,該斜角蝕刻器70係具備:具有內部空間的處理室71;真空夾盤等吸著構件72,係用以在處理室71的內部將半導體晶圓等被處理構件W保持於預定位置;噴淋板75,係配置於支持吸著構件72的支持構件73及吸著構件72的上側,且與用以將電漿生成用氣體G從氣體供給部導入的氣體導入管74連接;由導電性材料所構成的下部電極76;位於吸著構件72與下部電極76之間的下部支架環77;由導電性材料所構成的上部電極78;以及位於噴淋板75與上部電極78之間的上部環79。
吸著構件72及支持構件73均為圓板狀,惟吸著構件72為由多孔質的陶瓷所構成,而支持構件73係由緻密質的陶瓷所構成。
下部支架環77、上部環79均由以氧化鋁(Al2O3)、氮化鋁(AlN)、二氧化矽(SiO2)、碳化矽(SiC)、氮化矽(Si3N4)、氧化釔(Y2O3)等為主成分的陶瓷所構成。密閉區域80為由被處理構件W、下部支架環77及吸著構件72所包圍的空間,且於作動中利用泵P來排氣,使該空間內部的氣壓低於大氣壓。
上述的栓塞、吸著構件等本揭示的透氣性構件係例如由圓柱狀或圓板狀的多孔質陶瓷所構成,該多孔質陶瓷係包含:鋯酸釔(yttrium zirconate)、氧化鋁(Al2O3)、釔鋁複合氧化物(YAG、YAM及YAP中的至少一者)、氮化鋁(AlN)、二氧化矽(SiO2)、碳化矽(SiC)、氮化矽(Si3N4)及氧化釔(Y2O3),且以其中的至少一者為主成分者。
本揭示的透氣性構件為:多孔質陶瓷之外周面的粗糙度曲線的均方根傾斜(RΔq)係大於多孔質陶瓷之主面的粗糙度曲線的均方根傾斜(RΔq)。
若如上述構成,當多孔質陶瓷的外周面在利用接著劑將栓塞13、14等透氣性構件固定至靜電吸著部8、絕緣部5等情形時,接著劑會沿著凹凸形狀的傾斜從栓塞13、14的外周面向內部深入地浸入,因此透氣性構件可獲得較高的接著強度,且長期維持較高的可靠性。此外,被供給氦等冷卻用氣體之下側的主面的凹凸係平緩地形成,因此在腔室1內懸浮的粒子會難以附著,可抑制通氣阻力的增加。供冷卻用氣體排放之上側的主面的凹凸也平緩地形成,因此在腔室1內懸浮的粒子會難以堆積,可長期易於排放冷卻用氣體。
本揭示的透氣性構件為:多孔質陶瓷之外周面的粗糙度曲線的均方根傾斜(RΔq)係大於或等於0.2且小於或等於0.8。
外周面的粗糙度曲線的均方根傾斜(RΔq)為大於或等於0.2時,由於外周面的凹凸形狀的傾斜會變大,從而當利用接著劑將栓塞13、14等透氣性構件固定於靜電吸著部8、絕緣部5等情形時,接著劑會沿著凹凸形狀的傾斜從栓塞13、14的外周面向內部深入地浸入,因此透氣性構件可獲得較高的接著強度,且長期維持較高的可靠性。另一方面,當外周面的粗糙度曲線的均方根傾斜(RΔq)為小於或等於0.8時,將栓塞13、14等透氣性構件安裝至靜電吸著部8、絕緣部5等情形時,即使發生如透氣性構件造成該等靜電吸著部8、絕緣部5構件的內周面損傷的接觸,從透氣性構件脫離的粒子也會減少,且在腔室1內的空間懸浮的粒子也會減少。此外,產生於外周面的應力集中也會受到緩和。
粗糙度曲線的均方根傾斜(RΔq)係指:依據JIS B 0601:2001標準來測定之粗糙度曲線的基準長度1的局部傾斜dZ/dx的均方根,且由以下數式來定義者。
若均方根傾斜(RΔq)的數值較大,則表面的凹凸會變得陡峭,而若均方根傾斜(RΔq)的數值較小,表面的凹凸會變得平緩。
此外,多孔質陶瓷的至少任何一方的主面之粗糙度曲線的均方根傾斜(RΔq)亦可為大於或等於0.2且小於或等於0.8。
若主面的粗糙度曲線的均方根傾斜(RΔq)為大於或等於0.2,由於主面的凹凸形狀的傾斜會變大,從而當利用接著劑將栓塞等透氣性構件固定至靜電夾盤30等情形時,接著劑會沿著凹凸形狀的傾斜從栓塞37等透氣性構件的主面向內部深入地浸入,因此透氣性構件可獲得較高的接著強度,且長期維持較高的可靠性。另一方面,若主面的粗糙度曲線的均方根傾斜(RΔq)為小於或等於0.8,則將栓塞37等透氣性構件安裝至靜電夾盤30等情形時,即使發生如透氣性構件造成靜電夾盤30的底面35損傷的接觸,從透氣性構件脫離的粒子也會減少,且在腔室1內的空間懸浮的粒子也會減少。
均方根傾斜(RΔq)係可依據JIS B 0601:2001標準,使用形狀解析雷射顯微鏡(基恩斯(Keyence)(股)所生產的VK-X1100或其後續機種)來測定。就測定條件而言,首先設倍率為240倍、截止值λs設為無、截止值λc設為0.08mm、截止值λf設為無、作為測定對象之距離主面及外周面的一個部位的測定範圍例如設為1420μm×1070μm,並於每一個測定範圍,沿著測定範圍的中央部的長邊方向繪製作為測定對象的線段,而進行線段粗糙度量測即可。要量測之對象的長度例如為1320μm。
本揭示的透氣性構件係可由多孔質陶瓷所構成,該多孔質陶瓷係含有鋯酸釔及氧化釔,且以其中的少一者為主成分者。
若如上述構成,由於包含機械性強度較高的鋯酸釔、以及對於電漿之耐腐蝕性較高的氧化釔,且以其中的至少一者為主成分,從而在維持機械性強度的同時,對於電漿之耐腐蝕性也會提高,因此可長期使用。
具體而言,多孔質陶瓷分類為以下三種樣態。
(1)含有鋯酸釔作為主成分,且更含有氧化釔的多孔質陶瓷。
(2)含有氧化釔作為主成分,且更含有鋯酸釔的多孔質陶瓷。
(3)含有鋯酸釔及上述氧化釔作為主成分的多孔質陶瓷。
在此,多孔質陶瓷中的主成分係指:構成多孔質陶瓷之成分的合計100莫耳%中,包含大於或等於50莫耳%之成分。構成多孔質陶瓷的各成分係可使用採用CuKα射線的X射線繞射裝置(XRD)來鑑定,且各成分的莫耳比係可藉由使用XRD的裏特沃爾德法(Rietveld method)來求得。
以鋯酸釔為主成分的情形,氧化釔的莫耳比為大於或等於20莫耳%;以氧化釔為主成分的情形,鋯酸釔的莫耳比為大於或等於20莫耳%。
若鋯酸釔及氧化釔的各莫耳比均為50莫耳%,則兩者為主成分。
鋯酸釔的組成式,例如以YZrOx(3≦x≦3.5)、YZr2O7、Y2ZrO5、Y2Zr2O3、Zr0.92Y0.08O1.96等來表示。
鋯酸釔及氧化釔的結晶構造可皆為立方結晶。結晶構造可藉由採用CuKα射線的X射線繞射裝置(XRD)來求得。沒有因相變所導致強度劣化,即使暴露於反複高溫的環境下,也幾乎沒有裂紋等損傷,可反複使用。
多孔質陶瓷除含有鋯酸釔及氧化釔以外,亦可含有Si、Fe、Al及週期表第二族元素(以下,將週期表第二族元素記載為AE)中的至少一者作為氧化物,Si換算為SiO2可為小於或等於300質量ppm、Fe換算為Fe2O3可為小於或等於50質量ppm、Al換算為Al2O3可為小於或等於100質量ppm、AE換算為AEO可為小於或等於350質量ppm。
該等元素的含有量,可利用ICP(Inductively Coupled Plasma,感應耦合電漿)發光分光分析裝置來求得,且分別換算為上述氧化物即可。
此外,多孔質陶瓷係可含有鐵、鈷及鎳中的至少一者,且該等金屬元素的含有量的合計為小於或等於0.1質量%。
若該等金屬元素的含有量的合計為小於或等於0.1質量%,則可將多孔質陶瓷設為非磁性,因此多孔質陶瓷例如可用於電子射束曝光裝置等之要求抑制磁性的影響之裝置的構件。再者,由於抑制了局部性發生變色的疑慮,因此提高了商品價值。
特別是,該等金屬元素的含有量的合計可為小於或等於0.001質量%。
多孔質陶瓷亦可含有鉀、鈉、鎂及鈣中的至少一者,且前述金屬元素的含有量的合計為小於或等於0.001質量%。
含有鉀、鈉、鎂及鈣中的至少一者的氧化物的粒子會使得因電漿P而懸浮的疑慮提高,惟若該等金屬元素的含有量的合計為上述範圍,則可抑制這樣的疑慮。再者,將該等金屬設為上述範圍,藉此可降低介電損耗。
該等金屬元素中的每一者的含量係可使用生輝放電質量分析裝置(GDMS)來求得。
在此,本揭示中的多孔質陶瓷係指:氣孔率為大於或等於10體積%的陶瓷,氣孔率係可藉由壓汞法來求得。
多孔質陶瓷的內部的氣孔率係可較表層部的氣孔率還高。
若在內部空間懸浮的異物侵入並堆積在多孔質陶瓷的內部,會有難以去除該異物的疑慮,惟若內部的氣孔率較表層部的氣孔率還高,則可以降低這樣的疑慮。當內部的氣孔率較表層部的氣孔率還高時,表層部的氣孔率會變低,會使表層部的機械性強度及斷裂韌性提高,因此當作為栓塞13、14而分別
安裝於靜電吸著部8、絕緣部5等情形時,安裝會變得容易。此外,當作為栓塞37收容於內部空間33時,收容會變得容易。例如,表層部的氣孔率可為大於或等於20體積%且小於或等於40體積%,並且內部的氣孔率可較表面部的氣孔率為大於或等於1體積%且小於或等於5體積%。
在此,內部係指:距離多孔質陶瓷之厚度方向的假想中心面為±7%以內、並且以繞著多孔質陶瓷之軸中心的多孔質陶瓷之半徑的70%以內的區域。表層部係指:距離多孔質陶瓷的兩側的主面為35%以內、並且以多孔質陶瓷之外周面為起點之前述半徑的15%以內的區域。中間部為多孔質陶瓷之內部及表層部以外的區域。
形成栓塞37的多孔質陶瓷係具備沿直徑方向延伸的環狀凸部(未圖示),且環狀凸部的外周側表面可為多孔質陶瓷的外周面。若如上述構成,當作為栓塞37收容於內部空間33時,可比沒有環形凸部的情形還減少與內周面38的接觸面積,因此可降低因接觸產生之粒子脫落的疑慮。再者,環狀凸部可在包含多孔質陶瓷之軸的剖視觀看時為等腰梯形。
環狀凸部的厚度例如為栓塞37的厚度的大於或等於80%且小於或等於85%。
此外,多孔質陶瓷的氣孔面積佔有率可為大於或等於20面積%且小於或等於45面積%。若氣孔面積佔有率為上述範圍時,即使在抑制機械性強度的大幅降低的同時反覆昇溫、降溫也可抑制產生的熱應力。
此外,多孔質陶瓷的平均氣孔徑亦可為大於或等於1μm且小於或等於6μm。
當平均氣孔徑在上述範圍時,即使在抑制機械性強度的大幅降低的同時通過電漿生成用氣體,也可縮小從氣孔的周邊或氣孔的內部所產生的微粒(particle)。
此外,氣孔徑的峰度亦可為大於或等於2。
若氣孔徑的峰度為上述範圍時,具有異常大的直徑的氣孔會減少,因此相對地會使由該氣孔的內部所產生的微粒減少。
此外,氣孔徑的偏度亦可為大於或等於0。
若氣孔徑的偏度為上述範圍時,會使具有較小徑的氣孔的個數相對地增多,故此可使較大的微粒的發生比率減少。
關於氣孔面積佔有率及平均氣孔徑,使用圖像解析軟體「Win ROOF(Ver.6.1.3)」(三谷商事(股)生產),並將倍率設為100倍、表面中的一個部位的量測範圍設為3.1585×105μm2、氣孔徑的臨限值設為0.8μm而進行測定。並且,在四個部位進行上述測定,藉此可求得氣孔面積佔有率及平均氣孔徑。
氣孔徑的峰度係可採用Excel(註冊商標、Microsoft Corporation)所具有的函數Kurt來求得。
此外,氣孔徑的偏度係可採用Excel(註冊商標、Microsoft Corporation)所具有的函數Skew來求得。
圖5係顯示本揭示之多孔質陶瓷的X射線繞射圖譜的一例。
根據PDF(註冊商標)Number:01-089-5593所示的圖譜卡,鋯酸釔(YZrO3)之(222)面的繞射峰I1的位置,繞射角(2θ)為29.333°。
此外,根據PDF(註冊商標)Number:01-071-0099所示的圖譜卡,氧化釔(Y2O3)之(222)面的繞射峰I2的位置,繞射角(2θ)為29.211°。在圖5所示之
例中,藉由採用CuKα射線的X射線繞射所獲得的鋯酸釔(YZrO3)之(222)面的繞射峰I1的繞射角(2θ1)為29.22°,且偏移量Δ1為往低角側0.113°。氧化釔(Y2O3)之(222)面的繞射峰I2的繞射角(2θ2)為29.50°,且偏移量Δ2為往高角側0.289°。
如圖5所示,本揭示的多孔質陶瓷亦可為:繞射峰I1往低角側偏移、繞射峰I2往高角側偏移。當繞射峰I1往低角側偏移時,則結晶粒子的晶格間距會變大,形成拉伸應力殘留在結晶晶格的狀態。另一方面,當繞射峰I2往高角側偏移時,則結晶粒子的晶格間距會縮小,形成壓縮應力殘留在結晶晶格的狀態。如此一來拉伸應力及壓縮應力的殘留,會彼此抵消,因此造成粒子難以脫落。
此外,多孔質陶瓷亦可為:繞射峰I1的偏移量Δ1及繞射峰I2的偏移量Δ2的絕對值均為小於或等於0.5°。若偏移量Δ1及偏移量Δ2為上述範圍時,使得蓄積於結晶格子的應變減小,因此可長期使用。
接著,說明本揭示的透氣性構件的製造方法的一例。
準備氧化釔的粉末及氧化鋯粉末。以莫耳比為55~65:45~35的方式調和氧化釔與氧化鋯後,依序濕式混合、造粒,以獲得由氧化釔及氧化鋯所構成的顆粒。
在此,為了獲得鋯酸釔(YZrO3)之(222)面的繞射峰I1往低角側偏移、氧化釔(Y2O3)之(222)面的繞射峰I2往高角側偏移的透氣性構件,只要將經濕式混合的混合粉末的平均粒徑D50設為大於或等於0.8μm且小於或等於0.9μm即可。
為了獲得繞射峰I1的偏移量Δ1及繞射峰I2的偏移量Δ2之絕對值均為小於或等於0.5°的透氣性構件,只要將經濕式混合的混合粉末的平均粒徑D50設為大於或等於0.82μm且小於或等於0.88μm即可。
此外,為了獲得含有鐵、鈷及鎳中的至少一者,且該等金屬元素的含有量的合計為小於或等於0.1質量%的多孔質陶瓷,只要使用脫鐵機,例如以磁通密度為1特斯拉、處理時間為大於或等於60分鐘的方式,施予脫鐵處理即可。
將此顆粒填充於成型模,並藉由乾式加壓成形法、冷態靜水壓加壓成形法等來成形為預定的形狀(圓柱狀或圓板狀)。成形壓例如可設為78MPa至118MPa。
為了獲得多孔質陶瓷之外周面的粗糙度曲線的均方根傾斜(RΔq)為大於或等於0.2且小於或等於0.8的透氣性構件,係考慮收縮、並將構成成形模的模具的內周面之粗糙度曲線的均方根傾斜(RΔq)設為大於或等於0.22且小於或等於0.88即可。成形體的外周面會轉印模具的內周面。
為了獲得多孔質陶瓷的至少一方之主面的粗糙度曲線的均方根傾斜(RΔq)為大於或等於0.2且小於或等於0.8的透氣性構件,係考慮收縮、並將構成成形模的上衝壓頭及下衝壓頭的至少一者的加壓面的粗糙度曲線的均方根傾斜(RΔq)設為大於或等於0.22且小於或等於0.88即可。成形體的主面會轉印上述加壓面。
以大氣環境、保持溫度為1200至1600℃、保持時間為1至5小時的方式將成形而得的成形體燒製。如上所述方式,藉由經說明的製造方法,可獲得本揭示的透氣性構件。
此外,為了獲得氣孔面積佔有率為20至45面積%的透氣性構件,只要將保持溫度設為1250至1550℃即可。
此外,為了獲得平均氣孔徑為1至6μm的透氣性構件,將成形壓例如設為88至108MPa,並將保持溫度設為1250至1550℃即可。
藉由上述製造方法所獲得之本揭示的透氣性構件,即使插入至貫通孔或內部空間,脫離的粒子也會較少、可維持接著的可靠性,故可長期使用。
如此,當使用本揭示的透氣性構件,可獲得較高的接著強度,並長期維持較高的可靠性。此外,由於從本揭示的透氣性構件所脫離的粒子會減少,從而在腔室內的空間懸浮的粒子會減少,據此將透氣性構件固定於吸著部、絕緣部等之後,可長期維持可靠性。
以上,說明了本揭示之實施型態的透氣性構件,惟本揭示並不限定於以上的實施型態,在本揭示的範圍內可進行各種的變更及改良。例如,上述多孔持陶瓷並不限定為圓柱狀或圓板狀者,亦可為角柱狀或多角形的形狀,此外本揭示的透氣性構件不僅可作為半導體製造裝置用構件來使用,還可作為觸媒載體來使用。
1:腔室
2:噴淋板
2a:擴散部
2b:氣體供給部
3:基板支持總成
4:安裝部
5:絕緣部
6:支持部
7:熱傳導部
8:靜電吸著部
15:高頻電源
20:電漿處理裝置
G:電漿生成用氣體
P:電漿空間(電漿)
W:被處理構件
Claims (19)
- 一種透氣性構件,係包含柱狀或板狀的多孔質陶瓷,且該多孔質陶瓷之外周面的粗糙度曲線的均方根傾斜(RΔq)係較前述多孔質陶瓷之主面的粗糙度曲線的均方根傾斜(RΔq)還大。
- 一種透氣性構件,係包含柱狀或板狀的多孔質陶瓷,且該多孔質陶瓷之外周面的粗糙度曲線的均方根傾斜(RΔq)為大於或等於0.2且小於或等於0.8。
- 如請求項2所述之透氣性構件,其中,前述多孔質陶瓷中的至少一方之主面的粗糙度曲線的均方根傾斜(RΔq)為大於或等於0.2且小於或等於0.8,其中,前述主面的均方根傾斜(RΔq)較前述外周面的均方根傾斜還小。
- 如請求項1至3中任一項所述之透氣性構件,其中,前述多孔質陶瓷係含有鋯酸釔及氧化釔,且其中的至少一者為主成分。
- 如請求項4所述之透氣性構件,其中,前述多孔質陶瓷含有鋯酸釔作為主成分,且前述多孔質陶瓷更含有氧化釔。
- 如請求項4所述之透氣性構件,其中,前述多孔質陶瓷含有氧化釔作為主成分,且前述多孔質陶瓷更含有鋯酸釔。
- 如請求項4所述之透氣性構件,其中,前述多孔質陶瓷含有鋯酸釔及氧化釔作為主成分。
- 如請求項4至7中任一項所述之透氣性構件,其中,前述鋯酸釔及前述氧化釔的結晶構造均為立方結晶。
- 如請求項4至8中任一項所述之透氣性構件,其中,由X射線繞射所獲得之鋯酸釔(YZrO3)之(222)面的繞射峰I1往低角側偏移,且氧化釔(Y2O3)之(222)面的繞射峰I2往高角側偏移。
- 如請求項9所述之透氣性構件,其中,前述繞射峰I1的偏移量Δ1及前述繞射峰I2的偏移量Δ2之絕對值均為小於或等於0.5°。
- 如請求項1至10中任一項所述之透氣性構件,其中,前述多孔質陶瓷之內部的氣孔率係較前述多孔質陶瓷之表層部的氣孔率還高。
- 如請求項1至11中任一項所述之透氣性構件,其中,前述多孔質陶瓷係具備沿徑方向延伸的環狀凸部,且該環狀凸部的外周側表面為前述多孔質陶瓷的外周面。
- 如請求項1至12中任一項所述之透氣性構件,其中,前述多孔質陶瓷的氣孔面積佔有率為大於或等於20面積%且小於或等於45面積%。
- 如請求項1至13中任一項所述之透氣性構件,其中,前述多孔質陶瓷的平均氣孔徑為大於或等於1μm且小於或等於6μm。
- 如請求項1至14中任一項所述之透氣性構件,係包含鐵、鈷及鎳中的至少一者,且前述金屬元素之含有量的合計為小於或等於0.1質量%。
- 如請求項1至13中任一項所述之透氣性構件,係包含鉀、鈉、鎂及鈣中的至少一者,且前述金屬元素的含有量的合計為小於或等於0.001質量%。
- 一種半導體製造裝置用構件,係具備如請求項1至16中任一項所述之透氣性構件而成者。
- 一種栓塞,係包含如請求項1至16中任一項所述之透氣性構件。
- 一種吸著構件,係包含如請求項1至16中任一項所述之透氣性構件。
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