JP7053673B2 - セラミック複合体およびその製造方法ならびに半導体製造装置用部材 - Google Patents
セラミック複合体およびその製造方法ならびに半導体製造装置用部材 Download PDFInfo
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- 239000000919 ceramic Substances 0.000 title claims description 136
- 239000002131 composite material Substances 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 239000000758 substrate Substances 0.000 claims description 94
- 239000002245 particle Substances 0.000 claims description 30
- 230000002093 peripheral effect Effects 0.000 claims description 28
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 18
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 15
- 239000013078 crystal Substances 0.000 claims description 14
- 239000002344 surface layer Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 239000002243 precursor Substances 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000002223 garnet Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 239000012700 ceramic precursor Substances 0.000 claims 2
- 239000000843 powder Substances 0.000 description 14
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 9
- 238000010304 firing Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 4
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(iii) oxide Chemical compound O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 description 4
- 239000008187 granular material Substances 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- PSNPEOOEWZZFPJ-UHFFFAOYSA-N alumane;yttrium Chemical compound [AlH3].[Y] PSNPEOOEWZZFPJ-UHFFFAOYSA-N 0.000 description 2
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 2
- 229910000019 calcium carbonate Inorganic materials 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 239000000839 emulsion Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000005469 granulation Methods 0.000 description 2
- 230000003179 granulation Effects 0.000 description 2
- 230000002706 hydrostatic effect Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 2
- 239000000347 magnesium hydroxide Substances 0.000 description 2
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 235000019422 polyvinyl alcohol Nutrition 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000001993 wax Substances 0.000 description 2
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003995 emulsifying agent Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/50—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare-earth compounds
- C04B35/505—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare-earth compounds based on yttrium oxide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Ceramic Products (AREA)
- Compositions Of Oxide Ceramics (AREA)
Description
平均結晶粒径=1/√(Ng) (2)
A :円の面積
Nc:円内の粒子数
Nj:円周にかかった粒子数
M :顕微鏡の倍率
2 :第2セラミック基板
3 :凸部
3a:頂面
3b:外周面
4 :凹部
4a:底面
4b:内周面
5a、5b:酸化イットリウムの結晶粒子
6a、6b:酸化アルミニウムの結晶粒子
10:セラミック複合体
Claims (6)
- 希土類元素酸化物を主成分とする第1セラミック基板と、該第1セラミック基板に対向して配置される酸化アルミニウムを主成分とする第2セラミック基板とを備えてなり、
前記第1セラミック基板は、前記第2セラミック基板に対向する頂面と、該頂面に続くとともに該頂面に向って拡径している外周面とを備える逆円錐台状の凸部を有し、
前記第2セラミック基板は、前記第1セラミック基板の前記頂面に対向する底面と、該底面に続くとともに該底面から離れるにしたがって縮径している内周面とを備える円錐台状の凹部を有し、
前記凹部は、前記凸部の前記外周面が前記凹部の前記内周面に当接しているセラミック複合体。 - 希土類元素酸化物を主成分とする第1セラミック基板と、該第1セラミック基板に対向して配置される酸化アルミニウムを主成分とする第2セラミック基板とを備えてなり、
該第1セラミック基板は、前記第2セラミック基板に対向する頂面と、該頂面に続くとともに該頂面に向って拡径している外周面とを備える逆円錐台状の凸部を有し、
前記第2セラミック基板は、前記第1セラミック基板の前記頂面に対向する底面と、該底面に続くとともに該底面から離れるにしたがって縮径している内周面とを備える円錐台状の凹部を有し、
前記凹部は、前記凸部の前記外周面が前記凹部の前記内周面に当接しており、
前記凸部の前記外周面を含む第1表層部および前記凹部の前記内周面を含む第2表層部の少なくともいずれかは、希土類元素とアルミニウムと酸素とを含むガーネット構造、モノクリニック構造およびぺロブスカイト構造を構成する化合物の少なくともいずれかを含む、セラミック複合体。 - 前記凸部は、前記外周面と前記頂面とのなす角度が60°以下である、請求項1に記載のセラミック複合体。
- 前記酸化アルミニウムの結晶粒子の平均粒径は、前記希土類元素酸化物の結晶粒子の平均粒径よりも大きい、請求項1乃至請求項3のいずれかに記載のセラミック複合体。
- 請求項1乃至請求項3のいずれかに記載のセラミック複合体を備えてなる、半導体製造装置用部材。
- 請求項1乃至4のいずれかに記載のセラミック複合体の製造方法であって、
前記凸部を備えた前記第1セラミック基板を用意する工程と、
凹部を備えた、前記第2セラミック基板となる第2セラミック前駆体を用意する工程と、
前記凸部を前記凹部内に設置して前記第2セラミック基板前駆体を焼成して、前記凹部によって前記凸部を焼嵌めする、セラミック複合体の製造方法。
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JP2017251353 | 2017-12-27 | ||
JP2017251353 | 2017-12-27 | ||
PCT/JP2018/047796 WO2019131738A1 (ja) | 2017-12-27 | 2018-12-26 | セラミック複合体および半導体製造装置用部材 |
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JPWO2019131738A1 JPWO2019131738A1 (ja) | 2021-01-14 |
JP7053673B2 true JP7053673B2 (ja) | 2022-04-12 |
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WO (1) | WO2019131738A1 (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002192655A (ja) | 2000-12-26 | 2002-07-10 | Kyocera Corp | 耐食性部材 |
US20070252447A1 (en) | 2004-08-09 | 2007-11-01 | A.O. Smith Corporation | Electric motor having a stator |
JP2013095644A (ja) | 2011-11-02 | 2013-05-20 | Covalent Materials Corp | 多結晶セラミックス接合体およびその製造方法 |
JP2017028268A (ja) | 2015-07-15 | 2017-02-02 | ラム リサーチ コーポレーションLam Research Corporation | エッチングチャンバ部材としての、焼結ナノ結晶粒化イットリウムをベースとしたセラミックの使用 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH01275475A (ja) * | 1986-06-09 | 1989-11-06 | Albany Internatl Corp | 基盤ヘセラミツクセグメントの固定装置 |
JPH06126566A (ja) * | 1992-10-15 | 1994-05-10 | Makino Milling Mach Co Ltd | 工作機械の摺動案内構造 |
JPH09323174A (ja) * | 1996-04-05 | 1997-12-16 | Olympus Optical Co Ltd | 部材の接合方法及び接合された部材並びに接合された部 材の分解方法 |
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- 2018-12-26 WO PCT/JP2018/047796 patent/WO2019131738A1/ja active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002192655A (ja) | 2000-12-26 | 2002-07-10 | Kyocera Corp | 耐食性部材 |
US20070252447A1 (en) | 2004-08-09 | 2007-11-01 | A.O. Smith Corporation | Electric motor having a stator |
JP2013095644A (ja) | 2011-11-02 | 2013-05-20 | Covalent Materials Corp | 多結晶セラミックス接合体およびその製造方法 |
JP2017028268A (ja) | 2015-07-15 | 2017-02-02 | ラム リサーチ コーポレーションLam Research Corporation | エッチングチャンバ部材としての、焼結ナノ結晶粒化イットリウムをベースとしたセラミックの使用 |
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JPWO2019131738A1 (ja) | 2021-01-14 |
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