TW202105492A - 晶圓之加工方法 - Google Patents

晶圓之加工方法 Download PDF

Info

Publication number
TW202105492A
TW202105492A TW109124448A TW109124448A TW202105492A TW 202105492 A TW202105492 A TW 202105492A TW 109124448 A TW109124448 A TW 109124448A TW 109124448 A TW109124448 A TW 109124448A TW 202105492 A TW202105492 A TW 202105492A
Authority
TW
Taiwan
Prior art keywords
wafer
frame unit
frame
adhesive film
ring
Prior art date
Application number
TW109124448A
Other languages
English (en)
Other versions
TWI827865B (zh
Inventor
高橋宏行
和田健太郎
渡邊義雄
橫尾晉
Original Assignee
日商迪思科股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司
Publication of TW202105492A publication Critical patent/TW202105492A/zh
Application granted granted Critical
Publication of TWI827865B publication Critical patent/TWI827865B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366—Localised processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Dicing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

[課題]本發明提供一種晶圓之加工方法，抑制晶圓之外周的黏著膠膜及環狀框架因乾式蝕刻而受到加工之情形。[解決手段]本發明之晶圓之加工方法，包括：框架單元準備步驟，將晶圓以黏著膠膜固定於環狀框架的開口，準備框架單元；框架單元保持步驟，以蝕刻腔室內之靜電卡盤台，隔著黏著膠膜吸引保持框架單元的晶圓；遮蔽步驟，將環狀框架及黏著膠膜之環狀區域以蓋構件覆蓋，並從外部空間遮蔽；以及乾式蝕刻步驟，於框架單元保持步驟及遮蔽步驟實施後，對蝕刻腔室供給氣體，並對晶圓進行乾式蝕刻。

Description

晶圓之加工方法
本發明係關於一種晶圓之加工方法。
已知一種將元件晶圓予以乾式蝕刻的技術，該元件晶圓是在以矽為代表之半導體基板上形成有元件（例如參考專利文獻1）。作為乾式蝕刻之態樣，例如有經由電漿狀態之氣體所進行的蝕刻。此一技術，亦在下述目的中使用：形成將晶圓沿著分割預定線（切割道）而分割之分割槽，且將因雷射加工而產生的碎片或熱影響層（破壞層）去除，藉以提升抗折強度。此等加工之情況，於加工中或搬運中有晶圓破損的疑慮，因而晶圓是以藉由切割膠膜等黏著膠膜而固定於環狀框架的開口之框架單元的形態加工。 [習知技術文獻] [專利文獻]
[專利文獻1]：日本特開第2018－156973號公報
[發明所欲解決的課題] 然則，若以框架單元的形態對晶圓供給電漿狀態之氣體，則有晶圓之外周的黏著膠膜及環狀框架亦因電漿蝕刻而受到加工之疑慮。例如，環狀框架為樹脂製之情況，有因電漿蝕刻而變色、發塵的疑慮。尤其是黏著膠膜之情況，氟（F）容易成為殘渣而殘留在黏著層，若於電漿蝕刻加工後，擱置在大氣中或密閉容器中，則會由大氣中的氫（H）與氟（F）構成氟化氫（HF），有腐蝕元件之電極的疑慮。
本發明是鑒於此等問題而完成的發明，其目的在於提供一種晶圓之加工方法，抑制晶圓之外周的黏著膠膜及環狀框架因乾式蝕刻而受到加工之情形。
[解決課題的技術手段] 為了解決上述課題並達成目的，本發明的晶圓之加工方法，具備：框架單元準備步驟，將晶圓以黏著膠膜固定於環狀框架的開口，準備框架單元；框架單元保持步驟，以蝕刻腔室內之卡盤台，隔著該黏著膠膜吸引保持該框架單元的晶圓；遮蔽步驟，將該環狀框架及／或在該環狀框架與該晶圓之間露出的該黏著膠膜之環狀區域以蓋構件覆蓋，並從外部空間遮蔽；以及乾式蝕刻步驟，於該框架單元保持步驟及該遮蔽步驟實施後，對該蝕刻腔室供給氣體，並對該晶圓進行乾式蝕刻。
亦可於上述晶圓之加工方法中，該環狀框架係以樹脂形成，並在該遮蔽步驟以該蓋構件覆蓋該環狀框架。
亦可於上述晶圓之加工方法中，在該乾式蝕刻步驟，實施對該晶圓供給電漿狀態之氣體的電漿蝕刻。
[發明功效] 本案發明會發揮抑制晶圓之外周的黏著膠膜及環狀框架因乾式蝕刻而受到加工之功效。
針對用於實施本發明之方式（實施方式），參考圖式並詳細地予以說明。本發明並未受下述實施方式記載之內容所限定。此外，以下記載之構成要素，包含所屬技術領域中具有通常知識者可簡單思及之要素、實質上相同之要素。進一步，可將下述記載之構成適宜組合。此外，可在不脫離本發明之要旨的範圍內，施行構成之各種省略、置換或變更。
〔實施方式〕 依據圖式，說明本發明之實施方式的晶圓之加工方法。圖1係顯示實施方式的框架單元之一例的立體圖。圖2係顯示實施方式的晶圓之加工方法的流程之流程圖。
如圖1所示，框架單元1具備晶圓11、環狀框架12及黏著膠膜13。
晶圓11，例如以矽（Si）、碳化矽（SiC）、藍寶石（Al2 O3 ）等材料形成為圓盤狀。該晶圓11之正面111藉由設定為格子狀的分割預定線14（切割道）劃分為多個區域。於各區域設置有IC（Integrated Circuit，積體電路）、LED（Light Emitting Diode，發光二極體）等元件15。
於該晶圓11之背面112黏貼有直徑較晶圓11更大的黏著膠膜13。黏著膠膜13亦稱作樹脂片。黏著膠膜13具有圓盤狀之形狀。黏著膠膜13具備：基材層，藉由絕緣性的合成樹脂所構成；以及糊層，層積於基材層之正面及背面並具有黏著性。環狀框架12之內周緣121位於較晶圓11之外周緣113更為外周側。亦即，晶圓11之外徑較環狀框架12之內徑更小。環狀框架12之內周緣121的內側有開口。因此，環狀框架12配置於晶圓11之外周側。環狀框架12之背面黏貼於黏著膠膜13之外周部分的正面。亦即，隔著黏著膠膜13而將晶圓11固定於環狀框架12的開口，藉以構成將晶圓11以黏著膠膜13固定於環狀框架12的開口之框架單元1。另外，環狀框架12對電漿狀態之氣體45（於圖9顯示）具有耐受性，可應用不易因電漿狀態之氣體45而受到蝕刻之材質。在實施方式中，環狀框架12是藉由樹脂構成。
如圖2所示，實施方式的晶圓之加工方法具備：框架單元準備步驟（ST1）、遮罩層被覆步驟（ST2）、分割預定線加工步驟（ST3）、框架單元保持步驟（ST4）、遮蔽步驟（ST5）及乾式蝕刻步驟（ST6）。
如同前述，框架單元準備步驟ST1係準備將晶圓11以黏著膠膜13固定於環狀框架12的開口之框架單元1的步驟。以下，針對遮罩層被覆步驟ST2以後的步驟，對每一步驟各自進行說明。
（遮罩層被覆步驟ST2） 遮罩層被覆步驟ST2係以遮罩層26被覆晶圓11之正面111的步驟。圖3係顯示實施方式的晶圓之加工方法中於晶圓被覆遮罩層之遮罩層被覆步驟的狀態之側視圖。遮罩層26的被覆係利用旋轉塗佈機2而施行。另外，遮罩層26亦稱作被覆層。旋轉塗佈機2具備：旋轉台（保持台）21、旋轉軸部22、夾持裝置23及噴嘴24。
於遮罩層被覆步驟ST2中，藉由旋轉塗佈機2之旋轉驅動源的運作，使吸引及保持晶圓11之旋轉台21以旋轉軸部22為中心而旋轉，同時使框架單元1旋轉。於遮罩層被覆步驟ST2中，旋轉塗佈機2為如圖3所示，藉由從噴嘴24滴下液狀樹脂25的同時，使旋轉台12旋轉，而於晶圓11之正面111塗布液狀樹脂25。其後，藉由使液狀樹脂25乾燥及硬化等，而於晶圓11之正面111形成遮罩層26。
另外，液狀樹脂25是由聚乙烯醇（polyvinyl alcohol：PVA）或聚乙烯吡咯啶酮（polyvinyl pyrrolidone：PVP）等水溶性之液狀樹脂所形成，是藉由一旦硬化則對於在電漿蝕刻所使用的電漿狀態之氣體45（於圖5及圖9顯示）具有耐受性、不易受到電漿狀態之氣體45蝕刻的樹脂構成。
（分割預定線加工步驟ST3） 分割預定線加工步驟ST3係於晶圓11的分割預定線上之遮罩層26形成加工槽的步驟。圖4係顯示實施方式的晶圓之加工方法中將晶圓上之遮罩層加工而形成加工槽之分割預定線加工步驟的狀態之側視圖。於分割預定線14形成將晶圓11之正面111加工的加工槽36。分割預定線加工步驟例如係利用圖4所示之雷射加工裝置3而施行。
於實施方式中，分割預定線加工步驟ST3是在雷射加工裝置3中之卡盤台31的保持面311，隔著黏著膠膜13吸引保持晶圓11之背面側，並以夾持裝置33夾持環狀框架12。而後，雷射加工裝置3如圖4所示，一邊使雷射照射單元34與卡盤台31沿著分割預定線14（參考圖1）相對移動，一邊從雷射照射單元34對遮罩層26照射對於晶圓11具有吸收性之波長的雷射光線35，藉以在晶圓11與遮罩層26形成加工槽36。
（框架單元保持步驟ST4及遮蔽步驟ST5） 圖5係顯示在實施方式的晶圓之加工方法中對晶圓實施電漿蝕刻之電漿蝕刻步驟所使用的電漿蝕刻裝置之剖面圖。圖6係圖5所示的蝕刻腔室內之靜電卡盤台及蓋構件的立體圖。圖7係將框架單元搬入至圖6所示之靜電卡盤台上並且在蓋構件內的狀態之剖面圖。圖8係顯示實施方式的晶圓之加工方法的框架單元保持步驟及遮蔽步驟之靜電卡盤台與蓋構件的剖面圖。
框架單元保持步驟ST4係以圖5所示的電漿蝕刻裝置4內之靜電卡盤台6（卡盤台），隔著黏著膠膜13吸引保持框架單元1的晶圓11之步驟。此外，遮蔽步驟ST5係將環狀框架12及／或在環狀框架12與晶圓11之間露出的黏著膠膜13之環狀區域131以蓋構件5覆蓋，並從外部空間遮蔽的步驟。另，黏著膠膜13之環狀區域131為如圖5至圖8所示，係黏著膠膜13之局部中在環狀框架12與晶圓11之間露出的環狀之區域。
如圖5所示，電漿蝕刻裝置4具備蝕刻腔室41及靜電卡盤台6（卡盤台）。於蝕刻腔室41的內部設置有電漿處理室411。蝕刻腔室41具備：底壁412、上壁413、側壁414及氣體供給管43。於上壁413設置有氣體供給管43。蝕刻腔室41是透過氣體供給管43而將電漿狀態之氣體45（於圖5的箭頭及圖9顯示）供給至電漿處理室411內。於側壁414設置有開口415。閘門44藉由未圖示之致動器而上下移動。藉由閘門44的上下移動，開口415成為可開啟關閉。另外，於蝕刻腔室41連接有未圖示之排氣路徑，將內部的環境氣體排出。
靜電卡盤台6具有圓盤狀之形狀，以靜電吸附力隔著黏著膠膜13吸引保持晶圓11。如圖7所示，靜電卡盤台6具備：底面62、上表面63及外周面64。上表面63係保持黏著膠膜13之背面的保持面。於靜電卡盤台6之外周部設置有貫通上下方向（厚度方向）的貫通孔66。貫通孔66分為下側之小徑部661，及上側之大徑部662。大徑部662係從上表面63往下方凹陷的凹部。剖面為圓弧狀的槽涵蓋全周地設置於上表面63靠近貫通孔66之外周側，且於此槽嵌入有O型環50。O型環50係以具有彈性之橡膠等所形成。
此外，如圖5至圖9所示，於電漿蝕刻裝置4中，在靜電卡盤台6的上側配置有蓋構件5。如圖7所示，蓋構件5具備：外周壁部51、內周壁部52、上壁部53、底壁部54及連結部55。外周壁部51與內周壁部52具有沿著圓周方向延伸之圓筒狀的形狀。外周壁部51形成為內徑較環狀框架12之外徑更大的圓筒狀。外周壁部51之外周面511相對於靜電卡盤台6之外周面64，在靜電卡盤台6的徑方向位置相同。外周壁部51之底面512可與上表面63之外緣部631抵接。
內周壁部52形成為內徑較晶圓11之外徑更大且外徑較環狀框架12之內徑更小的圓筒狀。內周壁部52的內周面521形成為隨著往內周側前進而朝向下側的傾斜面。於底面522，剖面為圓弧狀的槽涵蓋全周地設置，且於此槽嵌入有O型環50。O型環50係以具有彈性之橡膠等所形成。底面522可與黏著膠膜13之正面抵接。具體而言，底面522與黏著膠膜13之正面中的晶圓11與環狀框架12之間的部分抵接。上壁部53形成為環狀，且與外周壁部51的上端及內周壁部52的上端連結。底壁部54形成為內徑較環狀框架12之內徑更小的環狀，除了外周壁部51在圖6的右側之端部以外，如圖7的左側所示，其外緣部透過連結部55而與外周壁部51一體地連結。另一方面，圖7的右側之端部所示的底壁部54，並未與外周壁部51在圖7的右側之端部連結，因此外周側開口57是在外周壁部51與底壁部54之間開口。外周側開口57如同圖7的箭頭IN所示，以可使框架單元1出入的方式形成。此外，底壁部54之徑方向的寬度與貫通孔66之大徑部662的寬度相等。進一步，在底面522與底壁部54之間設置有內周側開口58。
此外，於底壁部54之下側固定有在上下方向延伸的支撐配管42。支撐配管42是內部成為中空，且惰性氣體40在內部流通。惰性氣體40例如為氦氣。進一步，支撐配管42的上端為與底壁部54成為一體，因而亦作為使蓋構件5上下移動時之支撐體而發揮作用。亦即，藉由未圖示之致動器，可透過支撐配管42而使蓋構件5上下移動。
在框架單元保持步驟ST4，如圖7所示，若在使蓋構件5相對靜電卡盤台6上升而打開外周側開口57之狀態下，將框架單元1從該外周側開口57插入，則環狀框架12及黏著膠膜13之環狀區域131（參考圖5及圖7），配置於以蓋構件5之外周壁部51、內周壁部52及上壁部53包圍的區域。
在框架單元保持步驟ST4及遮蔽步驟ST5，如圖8所示，使支撐配管42及蓋構件5下降，並使蓋構件5之底壁部54與大徑部662嵌合。如此一來，則上表面63之外緣部631與外周壁部51之底面512抵接，內周壁部52之底面522與黏著膠膜13抵接，與此同時，O型環50彈性變形而發揮密封功能。
此外，在框架單元保持步驟ST4，若蓋構件5下降，底壁部54與凹部即大徑部662嵌合，則隔著黏著膠膜13而將晶圓11載置於靜電卡盤台6之上表面63。在框架單元保持步驟ST4，對靜電卡盤台6供給產生靜電吸附力之電力，而隔著黏著膠膜13將晶圓11吸引保持於上表面63。
在使蓋構件5之底壁部54嵌合至大徑部662的狀態下，藉由蓋構件5與靜電卡盤台6而設置密閉空間7。此處，於密閉空間7的內部容納有環狀框架12及黏著膠膜13之環狀區域131。如此，在遮蔽步驟ST5，藉由以蓋構件5覆蓋環狀框架12與黏著膠膜13之環狀區域131，而可從外部空間遮蔽。另外，藉由使惰性氣體40從支撐配管42流入至密閉空間7的內部，可使密閉空間7的內部為正壓。
接著，利用圖5至圖7，針對框架單元的保持治具100予以說明。框架單元的保持治具100，係於電漿蝕刻裝置4之蝕刻腔室41內，保持將晶圓11以黏著膠膜13固定於環狀框架12的開口之框架單元1的治具。保持治具100具備：靜電卡盤台6（卡盤台）、蓋構件5、密閉空間7、內周側開口58及外周側開口57。靜電卡盤台6吸引保持晶圓11。蓋構件5係圓環狀的構件，其設置為可在接近靜電卡盤台6的方向（圖5至圖7的下方）及遠離靜電卡盤台6的方向（圖5至圖7的上方）移動自如。密閉空間7係在靜電卡盤台6與蓋構件5彼此接近的狀態下，容納框架單元1之環狀框架12，且為從外部密閉的空間。內周側開口58設置於蓋構件5的內周側。若打開內周側開口58，則成為可在密閉空間7任意取出放入環狀框架12。
此外，內周側開口58與外周側開口57是當蓋構件5與靜電卡盤台6彼此接近時封閉。進一步，蓋構件5具備內周壁部52之底面522。底面522若與黏著膠膜13抵接則形成密閉空間7。於密閉空間7的內部容納有黏著膠膜13之環狀區域131。
（乾式蝕刻步驟ST6） 圖9係顯示實施方式的晶圓之加工方法的乾式蝕刻之靜電卡盤台及蓋構件的剖面圖。乾式蝕刻步驟ST6係於框架單元保持步驟ST4及遮蔽步驟ST5實施後，對蝕刻腔室41供給氣體45，並對晶圓11進行乾式蝕刻的步驟。於乾式蝕刻步驟ST6中，維持在遮蔽步驟ST5以蓋構件5覆蓋環狀框架12與黏著膠膜13之環狀區域131的狀態，如圖5所示，使電漿狀態之氣體45從氣體供給管43流入至電漿處理室411的內部。藉由電漿狀態之氣體45，對晶圓11施行乾式蝕刻。此處，由於以蓋構件5遮蔽環狀框架12與黏著膠膜13之環狀區域131，因此會抑制對環狀框架12及黏著膠膜13之環狀區域131施行乾式蝕刻。另外，乾式蝕刻例如包含電漿蝕刻、將材料暴露於反應氣體中之氣體蝕刻。此外，雖然實施方式中之乾式蝕刻的目的，是在於將分割預定線加工步驟ST3中因雷射加工而產生的碎片或熱影響層（破壞層）去除藉以提升抗折強度，但本發明並未限定於此，亦可將乾式蝕刻應用在將晶圓11沿著分割預定線14斷開為矩形晶片之加工。
另外，在實施方式中是利用所謂遠距電漿方式的蝕刻裝置，即於蝕刻腔室41的外部中透過氣體供給管43將電漿狀態之氣體45導入至蝕刻腔室41的內部。然則，在本發明亦可利用所謂直接電漿方式的蝕刻裝置，即對蝕刻腔室41的內部，從上部電極供給電漿化前之蝕刻氣體，且對各電極施加高頻電力，而在蝕刻腔室41的內部將蝕刻氣體電漿化。
以上，所說明之實施方式的晶圓之加工方法，具備：框架單元準備步驟，將晶圓11以黏著膠膜13固定於環狀框架12的開口，準備框架單元1；框架單元保持步驟，以蝕刻腔室41內之靜電卡盤台6（卡盤台），隔著黏著膠膜13吸引保持框架單元1的晶圓11；遮蔽步驟，將環狀框架12及黏著膠膜13之環狀區域131以蓋構件5覆蓋，並從外部空間遮蔽；以及乾式蝕刻步驟，於框架單元保持步驟及遮蔽步驟實施後，對蝕刻腔室41供給氣體45，並對晶圓11進行乾式蝕刻。
如此，藉由在乾式蝕刻中將環狀框架12及黏著膠膜13之環狀區域131以蓋構件5覆蓋並從外部氣體遮蔽，而發揮抑制環狀框架12及黏著膠膜13之環狀區域131因乾式蝕刻而變質及殘留氟的殘渣等的功效。例如，若氟（F）成為殘渣而殘留在黏著膠膜13，則有腐蝕元件之電極的疑慮，但若依本實施方式，則可抑制此元件之電極的腐蝕。
此外，在實施方式中，環狀框架12係以樹脂形成，並在遮蔽步驟以蓋構件5覆蓋環狀框架12，因此發揮抑制環狀框架12因乾式蝕刻而變色、發塵等的功效。
進一步，在實施電漿蝕刻作為乾式蝕刻步驟之情況，可發揮下述功效：可縮小設定作為分割預定線（切割道）14之寬度，而使每一晶圓11的元件之數量增加，此外，可縮短加工時間。
另外，在實施方式中，雖然說明於框架單元保持步驟ST4後施行遮蔽步驟ST5之方式，但亦可於遮蔽步驟ST5後施行框架單元保持步驟ST4。進一步，亦可同時施行框架單元保持步驟ST4與遮蔽步驟ST5。
另外，本發明並未限定於上述實施方式。亦即，可在未脫離本發明之架構的範圍內，實施各種變形。
1:框架單元 5:蓋構件 6:靜電卡盤台（卡盤台） 11:晶圓 12:環狀框架 13:黏著膠膜 131:環狀區域 41:蝕刻腔室 45:氣體 ST1:框架單元準備步驟 ST4:框架單元保持步驟 ST5:遮蔽步驟 ST6:乾式蝕刻步驟
圖1係顯示實施方式的框架單元之一例的立體圖。 圖2係顯示實施方式的晶圓之加工方法的流程之流程圖。 圖3係顯示實施方式的晶圓之加工方法中於晶圓被覆遮罩層之遮罩層被覆步驟的狀態之側視圖。 圖4係顯示實施方式的晶圓之加工方法中於晶圓上之遮罩層形成加工槽之分割預定線加工步驟的狀態之側視圖。 圖5係顯示在實施方式的晶圓之加工方法中對晶圓實施電漿蝕刻之電漿蝕刻步驟所使用的電漿蝕刻裝置之剖面圖。 圖6係圖5所示的蝕刻腔室內之靜電卡盤台及蓋構件的立體圖。 圖7係將框架單元搬入至圖6所示之靜電卡盤台上並且在蓋構件內的狀態之剖面圖。 圖8係顯示實施方式的晶圓之加工方法的框架單元保持步驟及遮蔽步驟之靜電卡盤台與蓋構件的剖面圖。 圖9係顯示實施方式的晶圓之加工方法的乾式蝕刻步驟之靜電卡盤台及蓋構件的剖面圖。
ST1:框架單元準備步驟
ST2:遮罩層被覆步驟
ST3:分割預定線加工步驟
ST4:框架單元保持步驟
ST5:遮蔽步驟
ST6:乾式蝕刻步驟

Claims (3)

  1. 一種晶圓之加工方法，具備： 框架單元準備步驟，將晶圓以黏著膠膜固定於環狀框架的開口，準備框架單元； 框架單元保持步驟，以蝕刻腔室內之卡盤台，隔著該黏著膠膜吸引保持該框架單元的晶圓； 遮蔽步驟，將該環狀框架及／或在該環狀框架與該晶圓之間露出的該黏著膠膜之環狀區域以蓋構件覆蓋，並從外部空間遮蔽；以及 乾式蝕刻步驟，於該框架單元保持步驟及該遮蔽步驟實施後，對該蝕刻腔室供給氣體，並對該晶圓進行乾式蝕刻。
  2. 如請求項1所述之晶圓之加工方法，其中， 該環狀框架係以樹脂形成，並在該遮蔽步驟以該蓋構件覆蓋該環狀框架。
  3. 如請求項1或2所述之晶圓之加工方法，其中， 在該乾式蝕刻步驟，實施對該晶圓供給電漿狀態之氣體的電漿蝕刻。
TW109124448A 2019-07-23 2020-07-20 晶圓之加工方法 TWI827865B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019-135257 2019-07-23
JP2019135257A JP7345304B2 (ja) 2019-07-23 2019-07-23 ウェーハの加工方法

Publications (2)

Publication Number Publication Date
TW202105492A true TW202105492A (zh) 2021-02-01
TWI827865B TWI827865B (zh) 2024-01-01

Family

ID=74099056

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109124448A TWI827865B (zh) 2019-07-23 2020-07-20 晶圓之加工方法

Country Status (8)

Country Link
US (1) US11171009B2 (zh)
JP (1) JP7345304B2 (zh)
KR (1) KR20210011878A (zh)
CN (1) CN112289745A (zh)
DE (1) DE102020208909A1 (zh)
MY (1) MY195571A (zh)
SG (1) SG10202005943XA (zh)
TW (1) TWI827865B (zh)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9070760B2 (en) 2011-03-14 2015-06-30 Plasma-Therm Llc Method and apparatus for plasma dicing a semi-conductor wafer
JP5938716B2 (ja) * 2013-11-01 2016-06-22 パナソニックＩｐマネジメント株式会社 プラズマ処理装置及びプラズマ処理方法
JP2016051876A (ja) 2014-09-02 2016-04-11 パナソニックＩｐマネジメント株式会社 プラズマ処理装置およびプラズマ処理方法
CN105789013B (zh) 2014-12-25 2017-09-19 中微半导体设备(上海)有限公司 用于晶圆切片的等离子体刻蚀装置及其装载、卸载晶圆的方法
US20170006951A1 (en) 2015-07-09 2017-01-12 Boa Technology, Inc. Fit systems for helmets
US20170069518A1 (en) 2015-09-04 2017-03-09 Globalfoundries Inc. Electrostatic substrate holder with non-planar surface and method of etching
JP6807558B2 (ja) * 2016-11-08 2021-01-06 パナソニックＩｐマネジメント株式会社 プラズマ処理方法およびプラズマ処理装置
TWI679691B (zh) * 2016-11-30 2019-12-11 美商帕斯馬舍門有限責任公司 用於電漿切割半導體晶圓的方法與設備
JP2018156973A (ja) 2017-03-15 2018-10-04 株式会社ディスコ ウェーハの加工方法
JP6818351B2 (ja) * 2017-04-14 2021-01-20 サムコ株式会社 ウエハ処理装置
JP7045635B2 (ja) * 2017-08-30 2022-04-01 パナソニックＩｐマネジメント株式会社 プラズマ処理装置及び方法
JP6994646B2 (ja) * 2018-01-17 2022-01-14 パナソニックＩｐマネジメント株式会社 素子チップの製造方法

Also Published As

Publication number Publication date
CN112289745A (zh) 2021-01-29
TWI827865B (zh) 2024-01-01
KR20210011878A (ko) 2021-02-02
JP7345304B2 (ja) 2023-09-15
SG10202005943XA (en) 2021-02-25
US20210028022A1 (en) 2021-01-28
DE102020208909A1 (de) 2021-01-28
JP2021019146A (ja) 2021-02-15
MY195571A (en) 2023-02-02
US11171009B2 (en) 2021-11-09

Similar Documents

Publication Publication Date Title
JP6463278B2 (ja) 半導体ウェハをプラズマ・ダイシングするための方法及び装置
JP4544231B2 (ja) 半導体チップの製造方法
JP6994646B2 (ja) 素子チップの製造方法
JP6388886B2 (ja) 半導体ウエハをプラズマ・ダイシングするための方法
JP6524553B2 (ja) 素子チップの製造方法
TWI754754B (zh) 晶圓加工方法
TW201901781A (zh) 晶圓的加工方法
TW201812965A (zh) 支持體分離方法、及基板處理方法
JP2017017286A (ja) チャックテーブル及び洗浄装置
TWI694504B (zh) 雷射加工方法
JP2016100346A (ja) ウェーハの加工方法
TWI827865B (zh) 晶圓之加工方法
TWI790454B (zh) 加工基材之方法
JP7321653B2 (ja) ディスプレイパネルの製造方法
JP4539981B2 (ja) 基板保持装置
JP7390615B2 (ja) 樹脂塗布装置、樹脂膜形成方法ならびに素子チップの製造方法
JP2020053472A (ja) 素子チップの製造方法
JP2020053473A (ja) 素子チップの製造方法
TWI822316B (zh) 加工基板的方法
JP2020031174A (ja) 素子チップの製造方法
TW201918441A (zh) 基板處理方法
JP5840932B2 (ja) 樹脂膜形成装置
JP7305276B2 (ja) 被加工物の保持方法
JP7128064B2 (ja) 被加工物の加工方法
TWI804947B (zh) 處理基板的方法